JP2015178662A - Vapor deposition mask, vapor deposition mask preparation body, and method of manufacturing organic semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition mask, a vapor deposition mask preparation body, and further a method of manufacturing organic semiconductor element using the vapor deposition mask such that higher definition and less weight are both attained even when the size increases, and a manufacturing process using the vapor deposition mask can be improved in yield and quality.SOLUTION: A vapor deposition mask 100 formed by laminating a metal mask 10, provided with a slit 15 overlapping an opening part 25 corresponding to a pattern to be formed by vapor deposition, on one surface of a resin mask 20 provided with the opening part 25 is provided with a plurality of alignment marks 40 at a part of a surface on a side, contacting the resin mask 20, of the metal mask 10, and at least one of the alignment marks 40 is positioned not in contact with one surface of the resin mask 20.

Description

  The present invention relates to a deposition mask, a deposition mask preparation, and a method for manufacturing an organic semiconductor element.

  With the increase in size of products using organic EL elements or the increase in substrate size, there is an increasing demand for increasing the size of vapor deposition masks. And the metal plate used for manufacture of the vapor deposition mask comprised from a metal is also enlarged. However, with the current metal processing technology, it is difficult to accurately form a slit in a large metal plate, and it is not possible to cope with the high definition of the slit. Further, in the case of a vapor deposition mask made of only metal, the mass increases with an increase in size, and the total mass including the frame also increases, resulting in trouble in handling.

  Under such circumstances, Patent Document 1 is laminated with a metal mask provided with slits and a resin mask in which openings corresponding to a pattern to be deposited and formed on the surface of the metal mask are arranged in multiple rows vertically and horizontally. A vapor deposition mask is proposed. According to the vapor deposition mask proposed in Patent Document 1, both high definition and light weight can be satisfied even when the size is increased, and a high-definition vapor deposition pattern can be formed. ing.

Japanese Patent No. 5288072

  The present invention aims to further improve a vapor deposition mask in which a metal mask and a resin mask as described in Patent Document 1 are stacked, and improve the yield and quality in a manufacturing process using the vapor deposition mask. It is a main subject to provide a method for manufacturing an organic semiconductor element using a vapor deposition mask, a vapor deposition mask preparation, and a vapor deposition mask.

  In order to solve the above problems, the present invention is formed by laminating a metal mask provided with a slit overlapping the opening on one surface of a resin mask provided with an opening corresponding to a pattern to be deposited. A plurality of alignment marks are provided on a part of a surface of the metal mask on a side in contact with the resin mask, and at least one of the plurality of alignment marks is one of the resin masks. It is characterized by not touching the surface.

  The alignment mark may be a through hole that penetrates the metal mask.

  Further, the present invention for solving the above-described problem is that a metal mask provided with a slit overlapping the opening is laminated on one surface of the resin mask provided with an opening corresponding to a pattern to be deposited. A vapor deposition mask preparation for obtaining a vapor deposition mask comprising: a metal mask provided with a slit on one surface of a resin plate; and a surface of the metal mask on a side in contact with the resin plate. A plurality of alignment marks are provided in part, and at least one of the plurality of alignment marks is not in contact with one surface of the resin plate.

Further, the present invention for solving the above problems is a method for producing an organic semiconductor element,
Including a step of forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask with a frame in which a vapor deposition mask is fixed, and in the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame is vapor deposition manufactured A metal mask provided with a slit overlapping the opening is laminated on one surface of the resin mask provided with an opening corresponding to the pattern to be formed, and the surface of the metal mask on the side in contact with the resin mask A plurality of alignment marks are provided in a part of at least one of the plurality of alignment marks, and at least one of the plurality of alignment marks is a vapor deposition mask that is not in contact with one surface of the resin mask.

  Further, in the step of forming the vapor deposition pattern, the alignment mark provided on the vapor deposition mask of the vapor deposition mask with the frame is used to align the vapor deposition mask with the frame and the vapor deposition object, and the organic A semiconductor element may be manufactured.

  According to the vapor deposition mask of the present invention, both high definition and light weight can be satisfied even when the size is increased, and the yield and quality in the manufacturing process using the vapor deposition mask can be improved. Moreover, according to the vapor deposition mask preparation of this invention, the vapor deposition mask which has said effect can be obtained. Moreover, according to the manufacturing method of the organic-semiconductor element of this invention, the organic-semiconductor element excellent in quality can be manufactured with a sufficient yield.

(A) is the front view which looked at the vapor deposition mask of one Embodiment from the resin mask side, (b) is the front view which looked at the resin mask of one Embodiment from the metal mask side, (c) is It is an AA schematic sectional drawing of (b). It is a schematic sectional drawing of the vapor deposition mask of one Embodiment. It is a schematic sectional drawing of the vapor deposition mask of one Embodiment. It is a schematic sectional drawing of the vapor deposition mask of one Embodiment. It is the front view which looked at the vapor deposition mask of one Embodiment from the resin mask side. It is the front view which looked at the vapor deposition mask of one Embodiment from the resin mask side. It is the front view which looked at the vapor deposition mask of one Embodiment from the resin mask side. It is the front view which looked at the vapor deposition mask of one Embodiment from the resin mask side. It is a schematic sectional drawing of a comparative vapor deposition mask. (A) is a schematic sectional drawing which shows the state which closely contacted the vapor deposition mask of one Embodiment, and the vapor deposition target object, (b) shows the state which contacted the comparative vapor deposition mask and vapor deposition target object. It is a schematic sectional drawing. It is a schematic cross-sectional view showing a state in which the vapor deposition mask of one embodiment and the vapor deposition object are brought into close contact with each other, It is the front view which looked at the vapor deposition mask of 1st Embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of 1st Embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of 1st Embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of 1st Embodiment from the metal mask side. (A) is the front view which looked at the vapor deposition mask of 2nd Embodiment from the metal mask side, (b) is the front view seen from the resin mask side. (A) is the front view which looked at the vapor deposition mask of 2nd Embodiment from the metal mask side, (b) is the front view seen from the resin mask side. It is a schematic sectional drawing for demonstrating the manufacturing method of the vapor deposition mask of one Embodiment. It is the front view which looked at the vapor deposition mask with a frame of one embodiment from the resin mask side. It is the front view which looked at the vapor deposition mask with a frame of one embodiment from the resin mask side.

<< Evaporation mask >>
Below, the vapor deposition mask 100 of one Embodiment of this invention is demonstrated concretely.

  As shown in FIGS. 1A to 1C, the vapor deposition mask 100 according to an embodiment of the present invention is provided on one surface of the resin mask 20 provided with openings 25 corresponding to the pattern to be vapor-deposited. The metal mask 10 provided with the slit 15 that overlaps the opening 25 is laminated. FIG. 1A is a front view of the vapor deposition mask of one embodiment as viewed from the resin mask 20 side, and FIG. 1B is a front view of the vapor deposition mask of one embodiment as viewed from the metal mask 10 side. (C) is an AA schematic sectional drawing of (b).

  And the vapor deposition mask 100 of one Embodiment of this invention is provided with several alignment mark 40 in a part of surface of the metal mask 10 side in contact with the resin mask 20, as shown in FIG. At least one of the alignment marks 40 is not in contact with one surface of the resin mask 20. In other words, at least one of the plurality of alignment marks 40 provided on a part of the surface of the metal mask 10 on the side in contact with the resin mask 20 is not covered with the resin of the resin mask 20. In the form shown in each drawing, a plurality of alignment marks 40 are provided on a part of the surface of the metal mask 10 on the side in contact with the resin mask 20, and all of the plurality of alignment marks 40 are on one surface of the resin mask 20. It takes the form which is not touching. The vapor deposition mask of one embodiment of the present invention is not limited to the illustrated form, and some of the plurality of alignment marks 40 provided on the surface of the metal mask 10 on the side in contact with the resin mask 20 are: It may be in contact with one surface of the resin mask 20 (not shown). A preferable vapor deposition mask has a form in which two or more of the plurality of alignment marks provided on the surface of the metal mask 10 on the side in contact with the resin mask 20 are not in contact with one surface of the resin mask 20. Hereinafter, unless otherwise specified, the alignment mark 40 means the alignment mark 40 that is not in contact with one surface of the resin mask 20.

  According to the vapor deposition mask 100 of one embodiment of the present invention having the above characteristics, the visibility of the alignment mark 40 is not hindered by the resin mask 20 when the alignment mark 40 is read from the alignment mark reading side. The mark 40 can be accurately recognized. Thereby, according to the vapor deposition mask 100 of one Embodiment of this invention, the precision of the alignment using the alignment mark 40 can be improved.

  On the other hand, all of the alignment marks 40 provided on a part of the surface of the metal mask 10 on the side in contact with the resin mask 20 are in contact with one surface of the resin mask 20, in other words, all the alignment marks 40 are In the comparative thermal transfer sheet 100X (FIG. 9) covered with the resin of the resin mask 20, when the alignment mark 40 is read from the alignment mark reading side, it is interposed between the alignment mark 40 and the alignment mark reading side. The visibility of the alignment mark 40 is hindered by the presence of the resin mask 20 to be performed, and it becomes difficult to accurately recognize the alignment mark 40.

  The term “alignment mark” as used in the specification of the present application refers to an alignment mask when the deposition mask is fixed to the frame, or when performing deposition using a deposition mask with a frame in which the deposition mask is fixed to the frame. Is used for aligning the film and the object to be deposited.

  FIG. 10A is a schematic cross-sectional view showing a state in which the vapor deposition mask and the vapor deposition object of one embodiment of the present invention are in close contact with each other, and FIG. 10B is a comparison vapor deposition mask shown in FIG. It is a schematic sectional drawing which shows the state which closely contacted the vapor deposition target object. In addition, with the form shown to Fig.10 (a), the vapor deposition target object is closely_contact | adhered with the vapor deposition mask with a flame | frame by which a vapor deposition mask is fixed to the flame | frame. And the vapor deposition mask of one Embodiment of this invention fixes the vapor deposition mask 100 to a flame | frame with sufficient positional accuracy using the alignment mark 40 with which visibility is favorable. In the illustrated embodiment, the description of the frame is omitted.

(Metal mask)
As shown in FIG. 1C, a metal mask 10 is laminated on one surface of the resin mask 20. The metal mask 10 is made of metal and has slits 15 extending in the vertical direction or the horizontal direction. The slit 15 is synonymous with the opening. The slit 15 is provided at a position overlapping the resin mask 20. There is no particular limitation on the arrangement example of the slits, as shown in each figure, the slits extending in the vertical direction and the horizontal direction may be arranged in a plurality of rows in the vertical direction and the horizontal direction, the slits extending in the vertical direction, A plurality of rows may be arranged in the horizontal direction, and a plurality of slits extending in the horizontal direction may be arranged in the vertical direction. Further, only one row may be arranged in the vertical direction or the horizontal direction.

  As shown in FIG. 1, the vapor deposition mask 100 of one embodiment of the present invention is provided with a plurality of alignment marks 40 on the surface of the metal mask 10 on the side in contact with the resin mask 20, and among the plurality of alignment marks 40. Is provided at a position not in contact with one surface of the resin mask 20. Hereinafter, an example of the alignment mark and the arrangement of the alignment mark will be described with reference to FIGS. 2 to 4 are schematic cross-sectional views of the vapor deposition mask of one embodiment, and FIG. 5 to FIG. 8 are front views of the vapor deposition mask of one embodiment as viewed from the resin mask side.

  The form of the alignment mark 40 is not particularly limited. For example, as shown in FIG. 1C, a through-hole penetrating from the surface of the metal mask 10 in contact with the resin mask toward the other surface, or FIG. As shown in FIG. 2, the metal mask 10 may be defined by a recess provided on the surface in contact with the resin mask. In particular, the alignment mark 40 defined by the through-hole shown in FIG. 1C is preferable in terms of high alignment mark reading accuracy because it easily has contrast in both transmitted light and reflected light. In the form shown in FIG. 1C and FIG. 2, the shape of the alignment mark 40 is the shape of the through hole or the recess viewed from the resin mask side. Further, in place of the form of through holes and recesses as alignment marks 40, as shown in FIG. 3, a resin layer having a predetermined shape using a resin material or the like on the surface of the metal mask 10 in contact with the resin mask. Etc., and the resin layer can be used as the alignment mark 40. In this case, the shape of the resin layer viewed from the resin mask side is the alignment mark shape. When the resin layer is used as the alignment mark 40, a colored resin layer may be used in order to further improve the alignment mark reading accuracy. Hereinafter, the shape of the alignment mark means a shape of the alignment mark 40 viewed from the other side of the resin mask. In addition, the shape of an exposed region described later means a shape of the exposed region viewed from the other surface side of the resin mask.

  The shape of the alignment mark 40 is not particularly limited as long as it can be recognized by a camera or the like. For example, a circular shape, a rectangular shape, a cross shape, and the like can be given.

  In the vapor deposition mask 100 according to the embodiment of the present invention, a part of the surface of the metal mask 10 is exposed by removing a part of the resin mask 20, and the alignment mark 40 is positioned on the exposed part. Yes. Hereinafter, a region where the surface of the metal mask 10 is exposed when viewed from the resin mask side may be referred to as an exposed region (see reference numeral 10 (X) in the drawing).

  In the vapor deposition mask 100 of one embodiment of the present invention, the alignment mark 40 may be positioned in a part of the exposed region 10X, and the exposed region 10X of the metal mask 10 can be used as the alignment mark 40 as it is. For example, in the embodiments shown in FIGS. 1 to 3 and FIGS. 5 to 8, the alignment mark 40 is located in a part of the exposed region 10 </ b> X. In the form shown in FIG. 4, the exposed region itself is used as the alignment mark 40. In the form shown in FIG. 4, since the exposed region 10X itself becomes the alignment mark 40, it is not necessary to provide a through hole, a concave portion, a resin layer, or the like in the metal mask 10 as shown in FIGS.

  In addition, according to the form shown in FIGS. 1 to 3, the alignment mask 40 positioned in the exposed region 10 </ b> X and a part of the outer edge of the exposed region 10 </ b> X, for example, an edge portion, are used as auxiliary marks to align the deposition mask. It can be performed. In this form, the so-called two types of alignment marks can be used to align the vapor deposition mask, and alignment with higher accuracy can be performed as compared with the vapor deposition mask of the form of FIG.

  There is no limitation on the shape of the exposed region 10X, and examples thereof include a circular shape, a rectangular shape, and a cross shape. When the shape of the exposed region 10X and the shape of the alignment mark 40 located in the exposed region are the same type, for example, when both the shape of the exposed region 10X and the alignment mark 40 are rectangular. When the alignment mark 40 located in the exposed area is recognized, the exposed area may be erroneously recognized. Therefore, in consideration of this point, the shape of the exposed region 10X is preferably a shape different from the shape of the alignment mark 40. For example, as illustrated in FIGS. 1 to 3, it is preferable that the shape of the exposed region 10 </ b> X is a rectangular shape and the shape of the alignment mark 40 is a circular shape or the like.

  The exposed region 10X is not particularly limited, and can be set as appropriate according to the position of the alignment mark 40. 5-8 is the front view which looked at the vapor deposition mask of one Embodiment from the resin mask side, and is a figure which shows an example of the exposure area | region 10X. In the vapor deposition mask 100 of the form shown in FIG. 5, a part of the surface of the metal mask 10 is exposed on the outer periphery in the horizontal direction of the vapor deposition mask 100, and the exposed mask 10 </ b> X is exposed in the exposed region 10 </ b> X. The alignment mark 40 is located. In other words, in the vapor deposition mask of the form shown in FIG. 5, the size of the metal mask 10 is made larger than that of the resin mask 20 so that a part of the metal mask protrudes outward in the lateral direction of the resin mask. Yes. The vapor deposition mask 100 of the form shown in FIG. 6 is such that the size of the metal mask 10 is smaller than that of the resin mask 20 and a predetermined through hole is provided in the resin mask in the vicinity of the outer periphery of the vapor deposition mask. Some are exposed. Also in the vapor deposition mask shown in FIG. 6, the alignment mark 40 is located in the exposed region 10X where the surface of the metal mask 10 is exposed. Moreover, some of the plurality of alignment marks 40 may be located in a region other than the exposed region 10X. In other words, a part of the plurality of alignment marks 40 may be in contact with one surface of the resin mask 20.

  The vapor deposition mask of the form shown in FIG. 7 and FIG. 8 exposes a part of the surface of the metal mask 10 by providing a predetermined through-hole or the like in the resin mask 20 in a region other than the outer periphery of the vapor deposition mask 100. The alignment mark 40 is located in the exposed region 10X where the surface of the mask 10 is exposed. The exposed region 10X is not limited to the form shown in each drawing, and for example, the form shown in each drawing can be combined. Further, a position other than the exposed area shown in the figure can be set as the exposed area.

  In the form shown in FIG. 10A, when the resin mask 20 of the vapor deposition mask 100 and the vapor deposition object are brought into close contact with each other, the alignment mark 40 is provided at a position overlapping the vapor deposition object. As shown, when the resin mask 20 of the vapor deposition mask 100 and the vapor deposition object are brought into close contact with each other, the alignment mark 40 can be provided at a position that does not overlap the vapor deposition object. Also in the vapor deposition mask of the form shown in FIG. 11, when the vapor deposition mask is fixed to the frame, that is, before the contact with the vapor deposition object, the alignment can be accurately performed.

  The material of the metal mask 10 is not particularly limited, and any conventionally known material can be appropriately selected and used in the field of the evaporation mask, and examples thereof include metal materials such as stainless steel, iron-nickel alloy, and aluminum alloy. . Among them, an invar material that is an iron-nickel alloy can be suitably used because it is less deformed by heat.

  Although the thickness of the metal mask 10 is not particularly limited, it is preferably 100 μm or less, more preferably 50 μm or less, and more preferably 35 μm or less in order to more effectively prevent the occurrence of shadows. Particularly preferred. When the thickness is less than 5 μm, the risk of breakage and deformation increases and handling tends to be difficult. Note that the shadow is thinner than the target deposition film thickness because a part of the deposition material released from the deposition source collides with the inner wall surface of the slit 15 of the metal mask 10 and does not reach the deposition target. This refers to a phenomenon in which an undeposited portion having a film thickness occurs. In particular, as the shape of the opening 25 is miniaturized, the influence of the shadow increases.

  In the form shown in each figure, the opening shape of the slit 15 is a rectangular shape, but the opening shape is not particularly limited, and the opening shape of the slit 15 is any shape such as a trapezoidal shape or a circular shape. Also good.

  The cross-sectional shape of the slit 15 formed in the metal mask 10 is not particularly limited, but preferably has a shape that expands toward the vapor deposition source as shown in FIG. More specifically, the angle formed by the straight line connecting the tip of the bottom base of the slit 15 of the metal mask 10 and the tip of the top base of the slit 15 of the metal mask 10, in other words, the metal mask 10. 10, the angle formed by the inner wall surface of the slit 15 and the surface of the metal mask 10 on the side in contact with the resin mask 20 (in the illustrated embodiment, the lower surface of the metal mask) is It is preferably within the range of 5 ° to 85 °, more preferably within the range of 15 ° to 80 °, and even more preferably within the range of 25 ° to 65 °. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable.

  The method for laminating the metal mask 10 on the resin mask is not particularly limited, and the resin mask 20 and the metal mask 10 may be bonded together using various adhesives, or a resin mask having self-adhesiveness may be used. . Resin mask 20 and metal mask 10 may have the same size or different sizes. If the resin mask 20 is made smaller than the metal mask 10 and the outer peripheral portion of the metal mask 10 is exposed in consideration of the optional fixing to the frame thereafter, the metal mask 10 It is preferable because it can be easily welded to the frame.

(Resin mask)
As shown in FIG. 1, the resin mask 20 is provided with a plurality of openings 25. The plurality of openings 25 are provided at positions that overlap the slits 15 of the metal mask 10 when the metal mask 10 and the resin mask 20 are stacked.

  As described above, a part of the resin mask 20 is removed, so that a part of the surface of the metal mask 10 is exposed. Then, at least one of the plurality of alignment marks is located in a region where a part of the surface of the metal mask is exposed.

  For the resin mask 20, a conventionally known resin material can be appropriately selected and used, and the material is not particularly limited. However, a high-definition opening 25 can be formed by laser processing or the like. It is preferable to use a lightweight material having a small dimensional change rate and moisture absorption rate. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene- Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, and ionomer resin. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both conditions is particularly preferable. . By using this resin material as a resin mask, the dimensional accuracy of the opening 25 can be improved, and the dimensional change rate and moisture absorption rate over time can be reduced.

  There is no particular limitation on the thickness of the resin mask 20, but when vapor deposition is performed using the vapor deposition mask 100 of one embodiment of the present invention, a vapor deposition portion that is thinner than the target vapor deposition film thickness, so-called In order to prevent the occurrence of shadows, the resin mask 20 is preferably as thin as possible. However, when the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation and the like increases. On the other hand, if it exceeds 25 μm, shadows may occur. Considering this point, the thickness of the resin mask 20 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin mask 20 within this range, it is possible to reduce the risk of defects such as pinholes and deformation, and to effectively prevent the generation of shadows. In particular, by setting the thickness of the resin mask 20 to 3 μm or more and 10 μm or less, more preferably 4 μm or more and 8 μm or less, it is possible to more effectively prevent the influence of shadows when forming a high-definition pattern exceeding 400 ppi. . In addition, the resin mask 20 and the metal mask 10 to be described later may be bonded directly or via an adhesive layer, but the resin mask 20 and the metal mask via an adhesive layer. 10 is bonded, it is preferable that the total thickness of the resin mask 20 and the pressure-sensitive adhesive layer is within the range of the preferable thickness.

  In the form shown in each figure, the opening shape of the opening 25 is rectangular, but the opening shape is not particularly limited, and the opening shape of the opening 25 may be any shape such as a trapezoidal shape or a circular shape. There may be.

  The end faces of the resin mask that form the opening 25 may be substantially parallel to each other. However, as shown in FIG. 1C, the opening 25 has a cross-sectional shape that expands toward the vapor deposition source. The shape is preferred. Specifically, the angle formed between the bottom end of the bottom of the resin mask and the straight line connecting the top of the bottom of the opening of the resin mask and the bottom of the vapor deposition mask, in other words, the opening of the resin mask 20. 25, the angle formed between the inner wall surface of the opening 25 and the surface of the resin mask 20 that is not in contact with the metal mask 10 (in the illustrated embodiment, the lower surface of the resin mask) is It is preferably within the range of 5 ° to 85 °, more preferably within the range of 15 ° to 80 °, and even more preferably within the range of 25 ° to 65 °. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable.

  Hereinafter, the form of the vapor deposition mask that enables the production of a higher-definition vapor deposition pattern will be described by taking the first embodiment and the second embodiment as examples.

<Deposition Mask of First Embodiment>
As shown in FIG. 12, the vapor deposition mask 100 according to the first embodiment of the present invention is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, and a plurality of vapor deposition masks are formed on one surface of the resin mask 20. The metal mask 10 provided with the slits 15 is laminated, and the resin mask 20 is provided with openings 25 necessary for constituting a plurality of screens, and each slit 15 is at a position overlapping at least one entire screen. It is provided. Furthermore, the vapor deposition mask 100 of the first embodiment is provided with a plurality of alignment marks 40 on a part of the surface of the metal mask 10 on the side in contact with the resin mask 20, and one of the plurality of alignment marks 40 is a resin. The mask 20 is not in contact with one surface. Preferably, two or more of the plurality of alignment marks 40 are not in contact with one surface of the resin mask 20. In the form shown in FIGS. 12 to 15, the alignment mark 40 that is not in contact with one surface of the resin mask is located near the outer periphery of the vapor deposition mask. An alignment mark 40 that is not in contact with the surface may be located. Moreover, the alignment mark 40 which is not in contact with one surface of the resin mask may be located both in the vicinity of the outer periphery of the vapor deposition mask and in a predetermined region between one screen. 12 to 15, the alignment mark 40 is defined by a through-hole penetrating the metal mask 10. However, the alignment mark 40 is defined by a recess, a resin layer, or the like (see FIGS. 2 and 3). May be defined. The same applies to the vapor deposition mask of the second embodiment.

  The vapor deposition mask 100 of 1st Embodiment is a vapor deposition mask used in order to form the vapor deposition pattern for several screens simultaneously, and can form the vapor deposition pattern corresponding to several products simultaneously with one vapor deposition mask 100. FIG. it can. The “opening” referred to in the vapor deposition mask of the first embodiment means a pattern to be produced using the vapor deposition mask 100 of the first embodiment. For example, the vapor deposition mask is formed as an organic layer in an organic EL display. When used for the above, the shape of the opening 25 is the shape of the organic layer. In addition, “one screen” includes an assembly of openings 25 corresponding to one product. When the one product is an organic EL display, it is necessary to form one organic EL display. An aggregate of organic layers, that is, an aggregate of openings 25 serving as an organic layer is “one screen”. And the vapor deposition mask 100 of 1st Embodiment arrange | positions the said "one screen" for several screens at predetermined intervals in the resin mask 20 in order to form the vapor deposition pattern for multiple screens simultaneously. . That is, the resin mask 20 is provided with openings 25 necessary for forming a plurality of screens.

  In the vapor deposition mask of the first embodiment, a metal mask 10 provided with a plurality of slits 15 is provided on one surface of a resin mask, and each slit is provided at a position overlapping at least one entire screen. Features a point. In other words, between the openings 25 necessary to form one screen, between the openings 25 adjacent in the horizontal direction, the length is the same as the length of the slit 15 in the vertical direction, and is the same as the metal mask 10. There is no metal line part having a thickness or a metal line part having the same length as the horizontal length of the slit 15 and the same thickness as the metal mask 10 between the openings 25 adjacent in the vertical direction. It is characterized by that. Hereinafter, the same length as the length of the slit 15 in the vertical direction and the same thickness as the metal mask 10 or the length of the slit 15 in the horizontal direction and the same length as the metal mask 10 Metal wire portions having a thickness may be collectively referred to simply as metal wire portions.

  According to the vapor deposition mask 100 of the first embodiment, when the size of the opening 25 necessary to configure one screen and the pitch between the openings 25 configuring one screen are narrowed, for example, a screen exceeding 400 ppi. Therefore, even if the size of the openings 25 and the pitch between the openings 25 are extremely small, it is possible to prevent interference due to the metal line portion and to form a high-definition image. It becomes. In addition, when one screen is divided by a plurality of slits, in other words, when a metal line portion having the same thickness as the metal mask 10 exists between the openings 25 constituting one screen, As the pitch between the openings 25 constituting one screen becomes narrower, the metal line portions existing between the openings 25 hinder the formation of the vapor deposition pattern on the vapor deposition object, and the high-definition vapor deposition pattern Formation becomes difficult. In other words, when there is a metal line portion having the same thickness as the metal mask 10 between the openings 25 constituting one screen, the metal line portion causes the generation of a shadow and forms a high-definition screen. It becomes difficult.

  Next, an example of the opening 25 constituting one screen will be described with reference to FIGS. In the form shown in the figure, a region closed by a broken line is one screen. In the illustrated form, for convenience of description, a small number of openings 25 are aggregated as one screen. However, the present invention is not limited to this form. For example, when one opening 25 is defined as one pixel, one screen There may be an opening 25 of several million pixels.

  In the form shown in FIG. 12, one screen is constituted by an aggregate of openings 25 in which a plurality of openings 25 are provided in the vertical direction and the horizontal direction. In the form shown in FIG. 13, one screen is constituted by an aggregate of openings 25 in which a plurality of openings 25 are provided in the horizontal direction. In the form shown in FIG. 14, one screen is constituted by an assembly of openings 25 in which a plurality of openings 25 are provided in the vertical direction. 12 to 14, a slit 15 is provided at a position overlapping the entire screen.

  As described above, the slit 15 may be provided at a position that overlaps only one screen, and is provided at a position that overlaps two or more entire screens, as shown in FIGS. It may be. In FIG. 15A, in the resin mask 10 shown in FIG. 12, a slit 15 is provided at a position overlapping the entire two screens that are continuous in the horizontal direction. In FIG. 15B, the slit 15 is provided at a position overlapping the entire three screens that are continuous in the vertical direction.

Next, taking the form shown in FIG. 12 as an example, the pitch between the openings 25 constituting one screen and the pitch between the screens will be described. There is no particular limitation on the pitch between the openings 25 constituting one screen and the size of the openings 25, and they can be set as appropriate according to the pattern to be deposited. For example, when forming a high-definition deposition pattern of 400 ppi, the horizontal pitch (P1) and vertical pitch (P2) of the adjacent openings 25 in the openings 25 constituting one screen are about 60 μm. It becomes. The size of the opening becomes 500μm ² ~1000μm ² about. In addition, one opening 25 is not limited to corresponding to one pixel. For example, depending on the pixel arrangement, a plurality of pixels can be integrated into one opening 25.

  There is no particular limitation on the horizontal pitch (P3) and the vertical pitch (P4) between the screens, but as shown in FIG. 12, when one slit 15 is provided at a position overlapping the entire screen, A metal line portion exists between the screens. Accordingly, the vertical pitch (P4) and horizontal pitch (P3) between the screens are smaller than the vertical pitch (P2) and horizontal pitch (P1) of the openings 25 provided in one screen. In this case, or when they are substantially equivalent, the metal wire portion existing between the screens is easily broken. Therefore, in consideration of this point, it is preferable that the pitch (P3, P4) between the screens is wider than the pitch (P1, P2) between the openings 25 constituting one screen. An example of the pitch (P3, P4) between the screens is about 1 mm to 100 mm. Note that the pitch between the screens means a pitch between adjacent openings in one screen and another screen adjacent to the one screen. The same applies to the pitch of the openings 25 and the pitch between the screens in the vapor deposition mask of the second embodiment to be described later.

  As shown in FIG. 15, when one slit 15 is provided at a position overlapping with two or more entire screens, a slit is not provided between a plurality of screens provided in one slit 15. The metal wire part which comprises an inner wall surface will not exist. Therefore, in this case, the pitch between two or more screens provided at a position overlapping with one slit 15 may be substantially equal to the pitch between the openings 25 constituting one screen.

  The resin mask 20 may be formed with grooves (not shown) extending in the vertical direction or the horizontal direction of the resin mask 20. When heat is applied during vapor deposition, the resin mask 20 may thermally expand, which may cause changes in the size and position of the opening 25. However, by forming a groove, the expansion of the resin mask can be absorbed. It is possible to prevent the resin mask 20 from expanding in a predetermined direction as a whole and accumulating the thermal expansion that occurs at various portions of the resin mask and changing the size and position of the opening 25. There is no limitation on the position where the groove is formed, and it may be provided between the openings 25 constituting one screen or at a position overlapping with the openings 25, but is preferably provided between the vertical screens. Further, the groove may be provided only on one surface of the resin mask, for example, the surface in contact with the metal mask, or may be provided only on the surface not in contact with the metal mask. Alternatively, it may be provided on both surfaces of the resin mask 20.

  Moreover, it is good also as a groove | channel extended in the vertical direction between adjacent screens, and you may form the groove | channel extended in a horizontal direction between adjacent screens. Furthermore, it is possible to form the grooves in a combination of these.

  The depth and width of the groove are not particularly limited. However, when the depth of the groove is too deep or too wide, the rigidity of the resin mask 20 tends to decrease, so this point is taken into consideration. It is necessary to set it. Further, the cross-sectional shape of the groove is not particularly limited, and may be arbitrarily selected in consideration of a processing method such as a U shape or a V shape. The same applies to the vapor deposition mask of the second embodiment.

<Deposition Mask of Second Embodiment>
Next, the vapor deposition mask of 2nd Embodiment is demonstrated. As shown in FIGS. 16 and 17, the vapor deposition mask of the second embodiment has one slit (one slit) on one surface of the resin mask 20 provided with a plurality of openings 25 corresponding to the pattern to be deposited. The metal mask 10 provided with the through holes 16) is laminated, and all of the plurality of openings 25 are provided at positions overlapping with one through hole provided in the metal mask 10. To do. Furthermore, as shown in FIGS. 16B and 17B, the vapor deposition mask 100 of the second embodiment includes a plurality of alignment marks 40 on a part of the surface of the metal mask 10 on the side in contact with the resin mask 20. , And one of the plurality of alignment marks 40 is not in contact with one surface of the resin mask 20. Preferably, two or more of the plurality of alignment marks 40 are not in contact with one surface of the resin mask 20. 16 (a) and 17 (a) are front views of the vapor deposition mask of the second embodiment as viewed from the metal mask side, and FIGS. 16 (b) and 17 (b) are as viewed from the resin mask side. It is a front view. As shown in the drawing, the vapor deposition mask 100 of the second embodiment has an alignment mark that is not in contact with one surface of the resin mask because the metal mask 10 provided with one slit is laminated on the resin mask 20. 40 is located near the outer periphery of the metal mask 10.

  The opening 25 referred to in the second embodiment means an opening necessary for forming a vapor deposition pattern on the vapor deposition target, and an opening not necessary for forming the vapor deposition pattern on the vapor deposition target is 1 It may be provided at a position that does not overlap with the two through holes 16.

  In the vapor deposition mask 100 of the second embodiment, the metal mask 10 having one through hole 16 is provided on the resin mask 20 having the plurality of openings 25, and all of the plurality of openings 25 are It is provided at a position overlapping with the one through hole 16. In the vapor deposition mask 100 of the second embodiment having this configuration, there is no metal line portion between the openings 25 that is the same as the thickness of the metal mask or thicker than the thickness of the metal mask. As described in the vapor deposition mask of the embodiment, it is possible to form a high-definition vapor deposition pattern according to the size of the opening 25 provided in the resin mask 20 without receiving interference from the metal line portion.

  Moreover, according to the vapor deposition mask of 2nd Embodiment, even if it is a case where the thickness of the metal mask 10 is made thick, since it hardly receives the influence of a shadow, the thickness of the metal mask 10 is made durable. In addition, the thickness and the handling property can be sufficiently increased, and the durability and the handling property can be improved while enabling the formation of a high-definition deposition pattern.

(Resin mask)
The resin mask 20 in the vapor deposition mask of the second embodiment is made of resin, and corresponds to a pattern that is vapor-deposited at a position overlapping one through-hole 16 as shown in FIGS. 16 (a) and 17 (a). A plurality of openings 25 are provided. The opening 25 corresponds to a pattern to be produced by vapor deposition, and the vapor deposition material released from the vapor deposition source passes through the opening 25 so that a vapor deposition pattern corresponding to the opening 25 is formed on the vapor deposition target. The In the illustrated embodiment, an example in which the openings are arranged in a plurality of rows in the vertical and horizontal directions is described. However, the openings may be arranged only in the vertical or horizontal direction.

  The vapor deposition mask 100 of 2nd Embodiment may be used for formation of the vapor deposition pattern corresponding to 1 screen, and may be used for simultaneous formation of the vapor deposition pattern corresponding to two or more screens. . “One screen” in the vapor deposition mask of the second embodiment means an aggregate of openings 25 corresponding to one product, and when the one product is an organic EL display, one organic EL display. An aggregate of organic layers necessary to form the film, that is, an aggregate of the openings 25 serving as the organic layer is “one screen”. In this case, it is preferable that the openings 25 are provided with a predetermined interval (see the openings in FIGS. 12 to 14 and examples of arrangement of one screen). In FIG. 16 and FIG. 17, one screen is constituted by 120 openings 25, but the present invention is not limited to this form. For example, when one opening 25 is one pixel, several millions One screen can be constituted by the openings 25. As an example of the pitch between the screens, both the vertical pitch and the horizontal pitch are about 1 mm to 100 mm. Note that the pitch between the screens means a pitch between adjacent openings in one screen and another screen adjacent to the one screen.

(Metal mask)
The metal mask 10 in the vapor deposition mask 100 of the second embodiment is made of metal and has one through hole 16. In the present invention, when the one through hole 16 is viewed from the front of the metal mask 10, the position overlaps all the openings 25, in other words, all the openings 25 arranged in the resin mask 20. It is placed in a visible position. Further, as described above, a plurality of alignment marks 40 are provided on a part of the surface of the metal mask 10 on the side in contact with the resin mask 20, and at least one of the plurality of alignment marks 40 includes: It is located at a location that does not contact one surface of the resin mask 20.

  Metal parts constituting the metal mask 10, that is, parts other than the through holes 16 may be provided along the outer edge of the vapor deposition mask 100 as shown in FIG. 16, and the size of the metal mask 10 as shown in FIG. The thickness may be smaller than that of the resin mask 20, and the vicinity of the outer peripheral portion of the resin mask 20 may be exposed. In any case, the size of the through hole 16 is configured to be smaller than the size of the resin mask 20.

  Although there is no particular limitation on the lateral width (W1) and the longitudinal width (W2) of the metal portion forming the wall surface of the through hole of the metal mask 10 shown in FIG. 16, the widths of W1 and W2 are reduced. As time goes on, durability and handling properties tend to decrease. Therefore, it is preferable that W1 and W2 have widths that can sufficiently satisfy durability and handling properties. Although an appropriate width can be appropriately set according to the thickness of the metal mask 10, as an example of a preferable width, both W1 and W2 are about 1 mm to 100 mm as in the metal mask of the first embodiment.

(Method for manufacturing vapor deposition mask)
Next, an example of the manufacturing method of the vapor deposition mask of one Embodiment of this invention is demonstrated.

  As shown in FIG. 18A, the vapor deposition mask manufacturing method according to an embodiment includes a metal mask 10 provided with a plurality of alignment marks 40 on the surface in contact with the resin plate 30 and provided with slits 15. A preparation process for preparing the metal mask 50 with a resin plate laminated with the resin plate 30, as shown in FIG. 18 (b), a laser is applied to the metal mask 50 with a resin plate through the slit 15 from the metal mask 10 side. By irradiating and irradiating the metal mask with resin plate 50 with a laser from the resin plate 30 side, as shown in FIG. 18C, the opening 25 corresponding to the pattern to be deposited on the resin plate 30. And forming an opening for exposing at least one of the plurality of alignment marks 40 provided on the surface of the metal mask 10 on the side in contact with the resin plate 30.

"Preparation process"
The preparation step is a step of preparing a metal mask with a resin plate obtained by laminating a metal mask provided with a plurality of alignment marks 40 on the surface in contact with the resin plate and provided with slits 15 with the resin plate. . For the resin plate 30, the materials described in the resin mask 20 can be used.

  In the above method, the resin plate 30 constituting the metal mask with resin plate 50 may be not only a plate-like resin but also a resin layer or a resin film formed by coating. That is, the resin plate may be prepared in advance, and when the metal mask 50 with a resin plate is formed using the metal plate and the resin plate 30, a conventionally known coating method is applied on the metal plate. For example, a resin layer or a resin film that finally becomes a resin mask can be formed.

  As a method of forming the metal mask 10 in which the slit 15 is provided and the plurality of alignment marks 40 are provided on the surface in contact with the resin plate 30, a masking member, for example, a resist material is applied to the surface of the metal plate. Then, by exposing and developing a predetermined portion, a resist pattern that leaves the position where the slit 15 and the alignment mark 40 are finally formed is formed. As the resist material used as the masking member, those having good processability and desired resolution are preferable. Next, etching is performed by an etching method using this resist pattern as an etching resistant mask. After the etching is completed, the resist pattern is removed by washing. Thereby, the metal mask 10 in which the plurality of alignment marks 40 are provided on the surface in contact with the slit 15 and the resin plate 30 is obtained. Etching for forming the slit 15 and the alignment mark 40 may be performed from one side of the metal plate or from both sides. Further, when the slit 15 and the plurality of alignment marks 40 are formed on the metal plate using the laminate in which the resin plate is provided on the metal plate, the masking member is formed on the surface of the metal plate that is not in contact with the resin plate. And slits 15 are formed by etching from one side. In addition, when the resin plate has etching resistance to the etching material of the metal plate, it is not necessary to mask the surface of the resin plate, but when the resin plate does not have resistance to the etching material of the metal plate. Needs to be coated with a masking member on the surface of the resin plate. In the above description, the resist material is mainly described as the masking member. However, instead of coating the resist material, a dry film resist may be laminated and the same patterning may be performed.

  Further, in place of the above method, (i) With a resin plate formed by laminating a metal mask 10 (refer to the metal mask in FIG. 2) having a recess formed on the surface in contact with the resin plate and a resin plate 30 A metal mask 50 may be prepared. (Ii) A metal mask 10 in which a resin layer formed using a resin material or the like is provided on the surface in contact with the resin plate (see the metal mask in FIG. 3). Alternatively, a metal mask 50 with a resin plate formed by laminating the resin plate 30 may be prepared. When the metal mask with a resin plate of (i) and (ii) above is prepared, a metal mask 10 having a recess formed on the surface in contact with the resin plate or provided with a resin layer is prepared in advance. The prepared metal mask 10 is bonded to a resin plate.

"Opening process"
In the opening forming step, as shown in FIG. 18B, the metal mask 50 with a resin plate is irradiated with laser through the slit 15 from the metal mask 10 side, and laser is irradiated from the resin mask side. It is a step of forming an opening 25 corresponding to a pattern to be deposited on the resin plate 30 and exposing at least one of the plurality of alignment marks 40 provided on the surface of the metal mask in contact with the resin plate 30. . Through this step, as shown in FIG. 18C, the slit 15 that overlaps the opening 20 is provided on one surface of the resin mask 20 provided with the opening 25 corresponding to the pattern to be deposited. The plurality of alignment marks 40 are provided on a part of the surface of the metal mask 10 on the side in contact with the resin mask 20, and at least one of the plurality of alignment marks 40 is the resin mask 20. A vapor deposition mask not in contact with one surface is obtained.

  The laser irradiation for forming the opening may be performed after the laser irradiation for exposing the alignment mark 40 or may be performed before the laser irradiation for exposing the alignment mark 40.

  In the above, a laser processing method is used as a means for forming the opening 25 and exposing the alignment mark 40. However, instead of the laser processing method, a resin is used by using precision press processing, photolithography, etching processing, or the like. By penetrating the plate, the opening 25 corresponding to the pattern to be deposited on the resin plate can be formed, and the alignment mark 40 can be exposed. In addition, it is preferable to use the laser processing method for formation of the opening part 25 from the point which can form the high definition opening part 25 easily.

(Deposition mask preparation)
Next, the vapor deposition mask preparation body of one Embodiment of this invention is demonstrated. In the vapor deposition mask preparation of one embodiment of the present invention, a metal mask provided with a slit overlapping the opening is laminated on one surface of the resin mask provided with an opening corresponding to the pattern to be produced by vapor deposition. A vapor deposition mask preparation for obtaining a vapor deposition mask, wherein a metal mask provided with a slit is laminated on one surface of the resin plate, and a part of the surface of the metal mask on the side in contact with the resin plate A plurality of alignment marks are provided, and at least one of the plurality of alignment marks is not in contact with one surface of the resin plate.

  The vapor deposition mask preparation of one embodiment of the present invention is common to the vapor deposition mask 100 of the one embodiment of the present invention described above except that the opening 25 is not provided in the resin plate 30, and is specific. Description is omitted. Specific examples of the structure of the vapor deposition mask preparation include the metal mask with a resin plate (see FIG. 18A) described in the preparation step in the vapor deposition mask manufacturing method.

  According to the vapor deposition mask preparation of one embodiment of the present invention, by forming an opening in the resin plate of the vapor deposition mask preparation, both high definition and light weight can be satisfied even when the vaporization mask is enlarged. Thus, it is possible to obtain a vapor deposition mask capable of improving the yield and improving the quality in the manufacturing process using. Specifically, a vapor deposition mask capable of accurately recognizing the alignment mark can be obtained from the alignment mark reading side.

(Method for manufacturing organic semiconductor element)
Next, the manufacturing method of the organic-semiconductor element of one Embodiment of this invention is demonstrated. The manufacturing method of the organic-semiconductor element of one Embodiment of this invention has the process of forming a vapor deposition pattern by the vapor deposition method using the vapor deposition mask with a flame | frame, and in the process of manufacturing the said organic-semiconductor element, the following vapor deposition mask with a flame | frame It is characterized in that is used.

  An organic semiconductor device manufacturing method according to an embodiment having a step of forming a vapor deposition pattern by a vapor deposition method using a vapor deposition mask with a frame includes an electrode forming step of forming an electrode on a substrate, an organic layer forming step, and a counter electrode forming step. The deposition pattern is formed on the substrate by a deposition method using a deposition mask with a frame in each optional step. For example, when the vapor deposition method using a vapor deposition mask with a frame is applied to the R, G, B light emitting layer forming step of the organic EL device, vapor deposition patterns of the respective color light emitting layers are formed on the substrate. In addition, the manufacturing method of the organic-semiconductor element of one Embodiment of this invention is not limited to these processes, It is applicable to the arbitrary processes in manufacture of the conventionally well-known organic-semiconductor element using a vapor deposition method.

  In the method of manufacturing an organic semiconductor element according to one embodiment of the present invention, in the step of forming the deposition pattern, the deposition mask fixed to the frame is the deposition mask according to one embodiment of the present invention described above. It is characterized by.

  As the vapor deposition mask constituting the frame-equipped vapor deposition mask, the vapor deposition mask 100 according to the embodiment of the present invention described above can be used as it is, and detailed description thereof is omitted here. According to the method for manufacturing an organic semiconductor element using the vapor deposition mask with the frame formed by fixing the vapor deposition mask of the embodiment of the present invention described above to the frame, the alignment mark is accurately recognized from the alignment mark reading side. Therefore, using this alignment mark, it is possible to accurately align the frame-equipped vapor deposition mask and the vapor deposition object, and to manufacture an organic semiconductor element having a high-definition pattern. As an organic semiconductor element manufactured with the manufacturing method of this invention, the organic layer, light emitting layer, cathode electrode, etc. of an organic EL element can be mentioned, for example. In particular, the method for manufacturing an organic semiconductor element according to an embodiment of the present invention can be suitably used for manufacturing R, G, and B light emitting layers of organic EL elements that require high-definition pattern accuracy.

  The vapor deposition mask with a frame used for manufacturing the organic semiconductor element only needs to satisfy the condition that the vapor deposition mask of the embodiment of the present invention described above is fixed to the frame. There is no particular limitation. The frame is not particularly limited and may be any member that can support the vapor deposition mask. For example, a metal frame, a ceramic frame, or the like can be used. Among these, the metal frame is preferable in that it can be easily welded to the metal mask of the vapor deposition mask and the influence of deformation or the like is small. Hereinafter, an example using a metal frame as a frame will be mainly described. For example, as shown in FIG. 19, a metal frame-equipped vapor deposition mask 200 in which one vapor deposition mask 100 is fixed to the metal frame 60 may be used, and as shown in FIG. A metal frame-equipped vapor deposition mask 200 in which vapor deposition masks (four vapor deposition masks in the illustrated form) are arranged in the vertical direction or in the horizontal direction and fixed (in the illustrated form, arranged in the horizontal direction) may be used. 19 and 20 are front views of the vapor deposition mask 200 with a metal frame of one embodiment as viewed from the resin mask 20 side, and the alignment marks are omitted.

  The metal frame 60 is a substantially rectangular frame member, and has an opening for exposing the opening 25 provided in the resin mask 20 of the vapor deposition mask 100 to be finally fixed to the vapor deposition source side. The material of the metal frame is not particularly limited, but a metal material having high rigidity, for example, SUS or Invar material is preferable.

  The thickness of the metal frame is not particularly limited, but is preferably about 10 mm to 30 mm from the viewpoint of rigidity and the like. The width between the inner peripheral end face of the opening of the metal frame and the outer peripheral end face of the metal frame is not particularly limited as long as the metal frame and the metal mask of the vapor deposition mask can be fixed. A width of about 50 mm can be exemplified.

  Further, a reinforcing frame 65 or the like may be present in the opening of the metal frame as long as the exposure of the opening 25 of the resin mask 20 constituting the vapor deposition mask 100 is not hindered. In other words, the opening of the metal frame 60 may be divided by the reinforcing frame or the like. In the form shown in FIG. 19, a plurality of reinforcing frames 65 extending in the horizontal direction are arranged in the vertical direction. May be. In the form shown in FIG. 20, a plurality of reinforcing frames 65 extending in the vertical direction are arranged in the horizontal direction. A plurality of them may be arranged. By using the metal frame 60 on which the reinforcement frame 65 is arranged, when the vapor deposition mask 100 according to an embodiment of the present invention is fixed to the metal frame 60 in a plurality of vertical and horizontal directions, The vapor deposition mask can be fixed to the metal frame 60 even at the position where the vapor deposition masks overlap.

  A method for fixing the metal frame 60 and the vapor deposition mask 100 according to an embodiment of the present invention is not particularly limited, and the metal frame 60 can be fixed using spot welding, adhesive, screwing, or the like that is fixed by laser light or the like.

200 ... Deposition mask 100 with metal frame ... Deposition mask 10 ... Metal mask 15 ... Slit 16 ... Through hole 20 ... Resin mask 25 ... Opening 30 ... Resin plate 40 ... Alignment mark 50 ... Metal mask 60 with resin plate ... Metal frame

Claims (5)

A vapor deposition mask in which a metal mask provided with a slit overlapping the opening is laminated on one surface of a resin mask provided with an opening corresponding to a pattern to be produced by vapor deposition,
A plurality of alignment marks are provided on a part of the surface of the metal mask that is in contact with the resin mask, and at least one of the plurality of alignment marks is not in contact with one surface of the resin mask. Evaporation mask characterized by.   The vapor deposition mask according to claim 1, wherein the alignment mark is a through-hole penetrating the metal mask. A vapor deposition mask preparation for obtaining a vapor deposition mask in which a metal mask provided with a slit overlapping with the opening is laminated on one surface of a resin mask provided with an opening corresponding to a pattern to be produced by vapor deposition There,
A metal mask provided with a slit is laminated on one surface of the resin plate,
A plurality of alignment marks are provided on a part of the surface of the metal mask that is in contact with the resin plate, and at least one of the plurality of alignment marks is not in contact with one surface of the resin plate. A vapor deposition mask preparation characterized by the above. A method for producing an organic semiconductor element, comprising:
Forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask with a frame having a vapor deposition mask fixed to the frame;
In the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame,
A metal mask provided with a slit overlapping with the opening is laminated on one surface of the resin mask provided with an opening corresponding to a pattern to be formed by vapor deposition, and the side of the metal mask in contact with the resin mask A plurality of alignment marks are provided on a part of the surface, and at least one of the plurality of alignment marks is a vapor deposition mask that is not in contact with one surface of the resin mask.
The manufacturing method of the organic-semiconductor element characterized by the above-mentioned. In the step of forming the vapor deposition pattern,
Using the alignment mark provided on the vapor deposition mask of the frame-equipped vapor deposition mask, the vapor deposition mask with the frame and the vapor deposition object are aligned to manufacture the organic semiconductor element. The manufacturing method of the organic-semiconductor element of Claim 4.

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