JP5899585B2 - Mask manufacturing method - Google Patents
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- JP5899585B2 JP5899585B2 JP2011242090A JP2011242090A JP5899585B2 JP 5899585 B2 JP5899585 B2 JP 5899585B2 JP 2011242090 A JP2011242090 A JP 2011242090A JP 2011242090 A JP2011242090 A JP 2011242090A JP 5899585 B2 JP5899585 B2 JP 5899585B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000010408 film Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 33
- 239000011347 resin Substances 0.000 claims description 32
- 229920005989 resin Polymers 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
本発明は、基板上に一定形状の薄膜パターンを形成するためのマスクの製造方法に関し、特に高精細な複数の開口パターンの形成を容易にすると共に、ハンドリング中も開口パターンの形状及び位置が維持できるようにするマスクの製造方法に係るものである。 The present invention relates to a method for manufacturing a mask for forming a thin film pattern having a fixed shape on a substrate, and particularly facilitates the formation of a plurality of high-definition opening patterns and maintains the shape and position of the opening pattern even during handling. The present invention relates to a method for manufacturing a mask.
従来のマスクの製造方法は、周縁部を除く内側部分に複数の貫通開口を有するレジストパターンを、金属板上に形成する工程と、レジストパターンの貫通開口を介してエッチング処理を行い、金属板に複数の貫通開口（開口パターン）を形成する工程と、レジストパターンを除去する工程と、貫通開口（開口パターン）の存在密度の高い金属板の内側部分を研磨して、貫通開口（開口パターン）の存在密度の高いマスク本体部とマスク本体部の周囲に位置するマスク本体部の厚さより大なる厚さを有する周縁部とを形成する工程と、を行うようになっていた（例えば、特許文献１参照）。 A conventional mask manufacturing method includes a step of forming a resist pattern having a plurality of through openings on an inner portion excluding a peripheral portion on a metal plate, and performing an etching process through the through openings of the resist pattern. A step of forming a plurality of through openings (opening patterns), a step of removing a resist pattern, and polishing an inner portion of a metal plate having a high density of through openings (opening patterns) to form through openings (opening patterns) Forming a mask main body portion having a high density and a peripheral portion having a thickness larger than the thickness of the mask main body portion located around the mask main body portion (for example, Patent Document 1). reference).
しかし、このような従来のマスクの製造方法において、一般に、数十μｍ〜数ｍｍの厚みの金属板に薄膜パターンに対応した貫通開口（開口パターン）を例えばエッチング等により形成してマスクが作られるので、金属板の厚みが厚い場合には貫通開口を高精度に形成することが困難であった。したがって、このようなメタルマスクを使用して例えば３００ｄｐｉ以上の高精細な薄膜パターンを形成することはできなかった。 However, in such a conventional mask manufacturing method, generally, a mask is made by forming a through-opening (opening pattern) corresponding to a thin film pattern, for example, by etching or the like on a metal plate having a thickness of several tens of μm to several mm. Therefore, when the metal plate is thick, it is difficult to form the through opening with high accuracy. Therefore, a high-definition thin film pattern of, for example, 300 dpi or more cannot be formed using such a metal mask.
一方、厚みが３０μｍ程度の金属板を使用すれば３００ｄｐｉを超える高精細な貫通開口を形成することは可能であるかもしれないが、隣接する貫通開口間の部分の幅が数十μｍとなるため、ハンドリング中に貫通開口の存在密度の高いマスク本体部によじれが発生し、貫通開口の形状及び位置を精度よく維持することが困難である。したがって、例えば有機ＥＬ表示装置を製造する際に、ＴＦＴ基板の画素間を正確にマスキングすることができず、成膜材料の回りこみ等が問題となる。それ故、従来の方法で製造されるメタルマスクでは、画素ピッチを狭くして高精細化を図ることに限界があった。 On the other hand, if a metal plate with a thickness of about 30 μm is used, it may be possible to form a high-definition through opening exceeding 300 dpi, but the width of the portion between adjacent through openings is several tens of μm. During handling, the mask main body having a high density of through openings is kinked, and it is difficult to maintain the shape and position of the through openings with high accuracy. Therefore, for example, when manufacturing an organic EL display device, it is not possible to accurately mask the pixels of the TFT substrate, and the wraparound of the film forming material becomes a problem. Therefore, the metal mask manufactured by the conventional method has a limit in achieving high definition by narrowing the pixel pitch.
そこで、本発明は、このような問題点に対処し、高精細な複数の開口パターンの形成を容易にすると共に、ハンドリング中も開口パターンの形状及び位置が維持できるようにするマスクの製造方法を提供することを目的とする。 Therefore, the present invention addresses the above-described problems, makes it easy to form a plurality of high-definition opening patterns, and provides a mask manufacturing method that allows the shape and position of the opening pattern to be maintained during handling. The purpose is to provide.
上記目的を達成するために、本発明によるマスクの製造方法は、基板上に一定形状の薄膜パターンを形成するためのマスクの製造方法であって、平板状の磁性金属材料に、前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部を設けて保持部材を形成する第１ステップと、前記保持部材の一面に、該保持部材と一体化させて可視光を透過する樹脂製のフィルムを保持する第２ステップと、第１の磁気チャック上に載置された前記基板上の前記薄膜パターン形成領域が前記保持部材の前記開口部内に位置するように前記保持部材を前記基板に対して位置合わせした後、前記第１の磁気チャックの磁力により前記保持部材を吸着して前記フィルムを前記基板面に密着させる第３ステップと、前記保持部材の前記開口部内の前記薄膜パターン形成領域に対応した前記フィルムの部分にレーザ光を照射して、前記薄膜パターンと同形状の貫通する開口パターンを形成する第４ステップと、第２の磁気チャックの磁力により前記保持部材を吸着して該保持部材及び前記フィルムを一体的に前記基板上から剥離する第５ステップと、を行なうものである。 In order to achieve the above object, a method for manufacturing a mask according to the present invention is a method for manufacturing a mask for forming a thin film pattern having a fixed shape on a substrate, wherein the thin film pattern is formed on a flat magnetic metal material. A first step of forming a holding member by providing a plurality of through-holes having a shape larger than that of the thin film pattern corresponding to the forming region, and visible light integrated with the holding member on one surface of the holding member a second step of the resin film which transmits to retain the said as the thin film pattern forming region of the substrate placed on the first magnetic chuck is positioned within the opening of the holding member A third step of aligning the holding member with respect to the substrate and then attracting the holding member by the magnetic force of the first magnetic chuck to bring the film into close contact with the substrate surface; A fourth step of irradiating a portion of the film corresponding to the thin film pattern forming region in the opening with laser light to form an opening pattern having the same shape as the thin film pattern; and a second magnetic chuck And a fifth step of separating the holding member and the film integrally from the substrate by attracting the holding member with a magnetic force.
好ましくは、前記第２ステップは、一定の温度及び圧力の下で前記保持部材と前記フィルムとを熱圧着して一体化するように実施されるのが望ましい。
又は、前記第２ステップは、前記保持部材に前記フィルムを接着させて一体化するように実施されてもよい。
Preferably, the second step is performed so that the holding member and the film are integrated by thermocompression bonding under a constant temperature and pressure.
Alternatively, the second step may be performed so that the film is bonded to and integrated with the holding member.
さらに、前記第２ステップは、平板状の母材の上面に塗布され、半乾燥状態にされたフィルム用樹脂に前記保持部材を圧着した後、前記樹脂を完全乾燥させて前記保持部材と前記フィルムとを一体化するように実施されてもよい。
また、前記第２ステップは、平板状の母材の上面に載置された前記保持部材の上面にフィルム用樹脂溶液を塗布した後、乾燥してフィルムを形成し、前記保持部材と前記フィルムとを一体化するように実施されてもよい。
Further, in the second step, after the holding member is pressure-bonded to the film resin which is applied to the upper surface of the flat base material and is in a semi-dried state, the resin is completely dried and the holding member and the film are then dried. And may be integrated.
In the second step, the resin solution for film is applied on the upper surface of the holding member placed on the upper surface of the flat base material, and then dried to form a film. The holding member, the film, May be implemented so as to be integrated.
さらに、前記第２ステップは、平板状の金属製母材の上面に塗布された感光性樹脂を露光及び現像して前記保持部材の前記開口部に対応した位置にフィルム用島パターンを形成した後、該島パターンの周囲領域に磁性膜をメッキして保持部材を形成することにより、前記保持部材と前記フィルムとを一体化するように実施されてもよい。
より好ましくは、前記フィルムは、ポリイミドであるのが望ましい。
Further, after the second step is performed, the photosensitive resin applied to the upper surface of the flat metal base material is exposed and developed to form an island pattern for film at a position corresponding to the opening of the holding member. The holding member and the film may be integrated by plating a magnetic film around the island pattern to form a holding member.
More preferably, the film is polyimide.
本発明によれば、成膜対象の基板又は薄膜パターン形成領域に対応して基準パターンを形成した基準基板上に、フィルムを密着させて開口パターンを形成しているので、高精細な複数の開口パターンも容易に形成することができる。 According to the present invention, since the opening pattern is formed by closely contacting the film on the reference substrate on which the reference pattern is formed corresponding to the substrate to be formed or the thin film pattern forming region, a plurality of high-definition openings A pattern can also be easily formed.
また、開口パターン形成後は、磁性金属材料からなる保持部材が磁気チャックの磁力により磁気チャックの吸着面に吸着されて保持されるので、ハンドリング中も開口パターンの形状及び位置が正規の状態に維持される。したがって、磁気チャックにより保持部材を吸着及び吸着解除を行って成膜対象の基板に対するマスクの授受を行えば、例えば３００ｄｐｉ以上の高精細な薄膜パターンの形成も容易に行うことができる。 In addition, after the opening pattern is formed, the holding member made of magnetic metal material is attracted and held on the attracting surface of the magnetic chuck by the magnetic force of the magnetic chuck, so that the shape and position of the opening pattern are maintained in a normal state during handling. Is done. Accordingly, if the holding member is attracted and released by the magnetic chuck and the mask is transferred to the substrate to be deposited, a high-definition thin film pattern of, for example, 300 dpi or more can be easily formed.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明によるマスクの製造方法の第１の実施形態を示す工程図である。このマスクの製造方法は、基板上に一定形状の薄膜パターンを形成するためのもので、保持部材１を形成する第１ステップと、保持部材１に樹脂製フィルム２を一体化して保持する第２ステップと、基板３上にフィルム２を密着させる第３ステップと、フィルム２に複数の開口パターン４を形成する第４ステップと、保持部材１とフィルム２とを一体的に基板３上から剥離する第５ステップと、を行って、図２に示すマスクを製造するものである。以下、各ステップを詳細に説明する。 Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a process diagram showing a first embodiment of a mask manufacturing method according to the present invention. This mask manufacturing method is for forming a thin film pattern having a fixed shape on a substrate, and includes a first step of forming the holding member 1 and a second step of holding the resin film 2 integrally with the holding member 1. A step, a third step in which the film 2 is brought into close contact with the substrate 3, a fourth step in which a plurality of opening patterns 4 are formed in the film 2, and the holding member 1 and the film 2 are integrally peeled off from the substrate 3. The fifth step is performed to manufacture the mask shown in FIG. Hereinafter, each step will be described in detail.
上記第１ステップは、図１（ａ）に示すように、平板状の磁性金属材料に、薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きく且つ細長状の複数のブリッジ５によって分離された貫通する複数の開口部６を設けて保持部材１を形成する工程である。 In the first step, as shown in FIG. 1A, a flat magnetic metal material is formed by a plurality of bridges 5 having a shape larger than that of the thin film pattern and having an elongated shape corresponding to the formation region of the thin film pattern. In this step, the holding member 1 is formed by providing a plurality of separated through openings 6.
より詳細には、第１ステップにおいて、保持部材１は、例えば１μｍ〜数ｍｍ程度、好ましくは３０μｍ〜５０μｍ程度の厚みを有する例えばニッケル又はニッケル合金からなる磁性金属材料の薄板にレジストマスクを使用して上記開口部６をウェットエッチング又はイオンミーリング等のドライエッチングにより、又はレーザ加工して形成される。この場合、開口部６は、後述の第４ステップにおいてフィルム２に形成される開口パターン４よりも形状が大きければよいので、開口部６の形成精度は開口パターン４程の高精度は要求されない。なお、開口部６の形状は、フィルム２側に向かって徐々に狭くなっている（縦断面形状が逆台形状）のがよい。これにより、成膜時に開口部６の縁部における成膜材料のけられがなくなり、薄膜パターンの膜厚を均一に形成することができる。 More specifically, in the first step, the holding member 1 uses a resist mask on a thin plate of magnetic metal material made of, for example, nickel or a nickel alloy having a thickness of, for example, about 1 μm to several mm, preferably about 30 μm to 50 μm. The opening 6 is formed by wet etching, dry etching such as ion milling, or laser processing. In this case, since the opening 6 only needs to have a larger shape than the opening pattern 4 formed on the film 2 in the fourth step described later, the formation accuracy of the opening 6 is not required to be as high as the opening pattern 4. In addition, the shape of the opening part 6 is good to become narrow gradually toward the film 2 side (a longitudinal cross-sectional shape is an inverted trapezoid shape). As a result, the film forming material is not scraped at the edge of the opening 6 during film formation, and the film thickness of the thin film pattern can be formed uniformly.
上記第２ステップは、図１（ｂ）に示すように、保持部材１の一面に、該保持部材１と一体化させて線膨張係数が一定の許容範囲内で保持部材１に等しく且つ可視光を透過する樹脂製のフィルム２を保持する工程であり、この第１の実施形態においては、フィルム２に保持部材１を熱圧着して行われる。 In the second step, as shown in FIG. 1B, the holding member 1 is integrated with the holding member 1 so that the linear expansion coefficient is equal to the holding member 1 within a certain allowable range and visible light is formed. a step of a resin film 2 to be transmitted to retain the, in this first embodiment, the holding member 1 on the film 2 is performed by thermocompression bonding.
第２ステップは、より詳細には、図３（ａ）に示すように平板状のガラス等の母材７上に密着された可視光を透過する熱可塑性のフィルム２、又は表面に融着性処理が施されたフィルム２の上面に保持部材１を載置するステップと、同図（ｂ）に示すように一定温度及び圧力の下で保持部材１をフィルム２に熱圧着して一体化するステップと、同図（ｃ）に示すようにフィルム２を母材７の表面から剥離するステップと、を含んでいる。この場合、フィルム２によって保持部材１のねじれや撓みが規制されるので、保持部材１の開口部６の形状及び位置が維持される。 More specifically, in the second step, as shown in FIG. 3A, the thermoplastic film 2 that transmits visible light adhered on the base material 7 such as flat glass or the like, or is fused to the surface. The step of placing the holding member 1 on the upper surface of the film 2 that has been processed, and the holding member 1 are thermocompression bonded to the film 2 under a constant temperature and pressure as shown in FIG. And a step of peeling the film 2 from the surface of the base material 7 as shown in FIG. In this case, since the twist and bending of the holding member 1 are regulated by the film 2, the shape and position of the opening 6 of the holding member 1 are maintained.
この第２ステップは、保持部材１の四辺を掴んで夫々外方に引っ張って保持部材１に一定のテンションを掛けた状態で実施するとよい。又は、平坦な面を有する磁気チャックの該平坦面に、磁性金属材料からなる保持部材１を磁力により吸着した状態で行ってもよく、両方を適宜組合せて行ってもよい。なお、上記磁気チャックは、永久磁石を備えて構成されたものであってもよいが、磁界の発生をオン／オフ制御できる電磁石を備えて構成されたものがよい。さらに、図３（ｃ）に示すフィルム２を母材７の表面から剥離するステップは、別の磁気チャックを保持部材１上に設置し、磁力により該磁気チャックの平坦な吸着面に保持部材１を吸着保持した状態で行うとよい。これにより、保持部材１の開口部６の形状及び位置を高精度に維持することができる。 This second step is preferably performed in a state where a predetermined tension is applied to the holding member 1 by holding the four sides of the holding member 1 and pulling them outward. Alternatively, it may be performed in a state where the holding member 1 made of a magnetic metal material is attracted to the flat surface of the magnetic chuck having a flat surface by a magnetic force, or a combination of both may be performed as appropriate. The magnetic chuck may include a permanent magnet, but preferably includes an electromagnet that can control on / off of the generation of a magnetic field. Further, in the step of peeling the film 2 from the surface of the base material 7 shown in FIG. 3C, another magnetic chuck is installed on the holding member 1, and the holding member 1 is placed on the flat attracting surface of the magnetic chuck by a magnetic force. It is good to carry out in a state of adsorbing and holding Thereby, the shape and position of the opening 6 of the holding member 1 can be maintained with high accuracy.
ここで使用するフィルム材料は、紫外線のレーザ光Ｌの照射によりアブレーションする樹脂製フィルムがよく、好ましくは、例えばポリイミドやポリエチレンテレフタレート（ＰＥＴ）等がよい。特に、ポリイミドは、線膨張係数が約１０×１０−６〜約４０×１０−６／℃であり、ニッケル等の金属の線膨張係数（約６×１０−６〜約２０×１０−６／℃）と許容範囲内で等しいため、金属材料からなる保持部材１と組合せて使用する場合、成膜時に両部材の熱膨張係数の違いによりマスクに反りが発生するのを抑制することができるのでより望ましい。 The film material used here may be a resin film that is ablated by irradiation with ultraviolet laser light L, and preferably, for example, polyimide, polyethylene terephthalate (PET), or the like. In particular, polyimide has a linear expansion coefficient of about 10 × 10 −6 to about 40 × 10 −6 / ° C., and a linear expansion coefficient of metal such as nickel (about 6 × 10 −6 to about 20 × 10 −6 / (° C.) within an allowable range, and when used in combination with the holding member 1 made of a metal material, it is possible to suppress warping of the mask due to the difference in thermal expansion coefficient between the two members during film formation. More desirable.
上記第３ステップにおいては、図１（ｃ）に示すように、第１の磁気チャック１７上に載置された基板３上の薄膜パターン形成領域が保持部材１の開口部６内に位置するように保持部材１に予め形成されたマスク側アライメントマーク９（図２参照）と基板３に予め形成された図示省略の基板側アライメントマークとを顕微鏡により観察しながら、両マークが一定の位置関係を成すように調整して保持部材１を基板３に位置合わせした後、基板３上に設置し、第１の磁気チャック１７の磁力により保持部材１を吸着してフィルム２を基板３上面に密着させる。 In the third step, as shown in FIG. 1C, the thin film pattern formation region on the substrate 3 placed on the first magnetic chuck 17 is positioned in the opening 6 of the holding member 1. While observing with a microscope a mask side alignment mark 9 (see FIG. 2) formed in advance on the holding member 1 and a substrate side alignment mark (not shown) formed in advance on the substrate 3, the two marks have a certain positional relationship. The holding member 1 is aligned with the substrate 3 by adjusting so that the holding member 1 is placed on the substrate 3, and the holding member 1 is attracted by the magnetic force of the first magnetic chuck 17 to closely adhere the film 2 to the upper surface of the substrate 3. .
この場合、上記基板３は、薄膜パターンを形成しようとする成膜対象の基板であっても、又は後述の第３ステップにおいてレーザ光Ｌの照射目標となる基準パターン８を薄膜パターン形成領域に対応して設けた基準基板であってもよい。上記基板３が成膜対象の基板であるときには、後述の第４ステップにおける開口パターン４の形成に続けて該開口パターン４を介して成膜し、基板３上に薄膜パターンを形成してもよい。これにより、高精細な薄膜パターンも位置精度よく形成することができる。 In this case, even if the said board | substrate 3 is a board | substrate of the film-forming object which is going to form a thin film pattern, or the reference pattern 8 used as the irradiation target of the laser beam L in the 3rd step mentioned later respond | corresponds to a thin film pattern formation area. A reference substrate provided may be used. When the substrate 3 is a substrate to be formed, a thin film pattern may be formed on the substrate 3 by forming a film through the opening pattern 4 subsequent to the formation of the opening pattern 4 in a fourth step described later. . Thereby, a high-definition thin film pattern can also be formed with high positional accuracy.
上記第４ステップにおいては、図１（ｄ）に示すように、保持部材１の開口部６内の薄膜パターン形成領域（基準パターン８）に対応したフィルム２の部分に、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザを使用して、エネルギー密度が０．１Ｊ／ｃｍ２〜２０Ｊ／ｃｍ２のレーザ光Ｌを照射し、薄膜パターンと同形状の貫通する開口パターン４を形成する。 In the fourth step, as shown in FIG. 1D, the wavelength of the film 2 corresponding to the thin film pattern formation region (reference pattern 8) in the opening 6 of the holding member 1 is 400 nm or less. For example, using an excimer laser of KrF 248 nm, the laser beam L having an energy density of 0.1 J / cm 2 to 20 J / cm 2 is irradiated to form the opening pattern 4 having the same shape as the thin film pattern.
上記第５ステップにおいては、図１（ｅ）に示すように、吸着面が平坦に形成された第２の磁気チャック１８を保持部材１の上面に設置し、第２の磁気チャック１８の電磁石をオンすると共に第１の磁気チャック１７の電磁石をオフし、第２の磁気チャック１８の磁力により保持部材１を吸着して該保持部材１及びフィルム２を一体的に基板３上から剥離し、第２の磁気チャック１８側に受け取る。これにより、本発明のマスクの製造工程が終了し、図２に示すようなマスクが完成する。以後、この第２の磁気チャックに保持部材１を吸着した状態でマスクのハンドリングを行えば、マスクの開口パターン４の形状及び位置が維持され、その後の高精細な薄膜パターンの形成を容易に行うことができる。 In the fifth step, as shown in FIG. 1E, the second magnetic chuck 18 having a flat attracting surface is placed on the upper surface of the holding member 1, and the electromagnet of the second magnetic chuck 18 is installed. The electromagnet of the first magnetic chuck 17 is turned off, the holding member 1 is attracted by the magnetic force of the second magnetic chuck 18, and the holding member 1 and the film 2 are integrally peeled from the substrate 3. 2 is received on the magnetic chuck 18 side. Thereby, the manufacturing process of the mask of the present invention is completed, and the mask as shown in FIG. 2 is completed. Thereafter, if the mask is handled while the holding member 1 is attracted to the second magnetic chuck, the shape and position of the opening pattern 4 of the mask are maintained, and subsequent formation of a high-definition thin film pattern is facilitated. be able to.
上記第２ステップの変形例として、フィルム２の表面を改質処理した後、保持部材１を熱圧着して保持部材１とフィルム２とを一体化してもよい。上記表面改質処理には、フィルム２の表面をエッチングして、表面にカルボキシル基（−ＣＯＯＨ）やカルボニル基（−ＣＯＯ）等の親水基を形成する方法がある。これにより、フィルム２と金属製の保持部材１との界面における化学結合により両部材の接着が可能となる。又は、例えばシランカップリング剤等をフィルム２と保持部材１との界面に塗布し、シラノール（ＳｉＯＨ）基を形成させて濡れ性を改善すると共に、フィルム２と保持部材１の界面に形成された水素結合を、さらに脱水縮合させてもよい。これにより、より安定な化学結合による接着が可能となる。他に、フィルム２の表面を大気圧プラズマ又は減圧プラズマ中でプラズマ処理したり、アルカリ溶液でフィルム２の表面をウェットエッチングしたりしてフィルム２の表面を改質することも可能である。 As a modification of the second step, after the surface of the film 2 is modified, the holding member 1 may be thermocompression bonded to integrate the holding member 1 and the film 2. The surface modification treatment includes a method of etching the surface of the film 2 to form hydrophilic groups such as carboxyl groups (—COOH) and carbonyl groups (—COO) on the surface. Thereby, both members can be bonded by chemical bonding at the interface between the film 2 and the metal holding member 1. Alternatively, for example, a silane coupling agent or the like is applied to the interface between the film 2 and the holding member 1 to form a silanol (SiOH) group to improve wettability, and the film 2 is formed at the interface between the film 2 and the holding member 1. Hydrogen bonds may be further subjected to dehydration condensation. Thereby, adhesion by a more stable chemical bond becomes possible. In addition, it is possible to modify the surface of the film 2 by subjecting the surface of the film 2 to plasma treatment in atmospheric pressure plasma or reduced pressure plasma, or wet etching the surface of the film 2 with an alkaline solution.
図４は、本発明によるマスクの製造方法の第２の実施形態の要部を示す工程図である。ここでは、第１の実施形態と異なる部分について説明する。
この第２の実施形態は、第２ステップが接着剤を使用して保持部材１にフィルム２を接着して行われる点で第１の実施形態と相違している。
FIG. 4 is a process diagram showing the main part of the second embodiment of the mask manufacturing method according to the present invention. Here, a different part from 1st Embodiment is demonstrated.
This second embodiment is different from the first embodiment in that the second step is performed by adhering the film 2 to the holding member 1 using an adhesive.
より詳細には、上記第２ステップは、図４（ａ）に示すように平板状のガラス等の母材７上に密着されたフィルム２の上面に保持部材１を載置するステップと、同図（ｂ）に示すように保持部材１の開口部６内に可視光を透過する硬化性樹脂１０を塗布して硬化させ、保持部材１とフィルム２とを一体化するステップと、同図（ｃ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に保持部材１を吸着してフィルム２を母材７の表面から剥離するステップと、を含んでいる。ここで使用する硬化性樹脂１０は、例えば紫外線硬化又は光硬化性の無溶剤又は溶剤が極めて少ない樹脂がよい。 More specifically, the second step is the same as the step of placing the holding member 1 on the upper surface of the film 2 that is in close contact with the base material 7 such as flat glass as shown in FIG. A step of applying and curing a curable resin 10 that transmits visible light into the opening 6 of the holding member 1 and integrating the holding member 1 and the film 2 as shown in FIG. c), for example, a step of adsorbing the holding member 1 to a flat adsorbing surface of a magnetic chuck (not shown) and peeling the film 2 from the surface of the base material 7 is included. The curable resin 10 used here is preferably, for example, an ultraviolet curable or photocurable solventless or a resin with very little solvent.
図５は、上記第２の実施形態における第２ステップの変形例を示す説明図である。
この第２ステップは、同図（ａ）に示すように、例えば平坦な面を有する図示省略の静電チャック上に静電吸着されたフィルム２の一面にスパッタリングやメッキ等の公知の成膜技術により銅等の金属膜１１を成膜するステップと、同図（ｂ）に示すように金属膜１１上にノンフラックス半田１２を塗布するステップと、同図（ｃ）に示すようにノンフラックス半田１２により金属膜１１を保持部材１に半田付けしてフィルム２を保持部材１に接着して一体化するステップと、を含むものである。ノンフラックス半田１２により接着する場合には、成膜時に不純物ガスが発生するおそれがない。したがって、例えば有機ＥＬ発光層を蒸着形成する際に、不純物ガスにより有機ＥＬ発光層がダメージを受けるという問題を解消することができる。
FIG. 5 is an explanatory diagram showing a modification of the second step in the second embodiment.
In this second step, as shown in FIG. 5A, for example, a known film formation technique such as sputtering or plating on one surface of a film 2 electrostatically attracted onto an electrostatic chuck (not shown) having a flat surface. A step of forming a metal film 11 such as copper, a step of applying a non-flux solder 12 on the metal film 11 as shown in FIG. 5B, and a non-flux solder as shown in FIG. 12 and soldering the metal film 11 to the holding member 1 and bonding the film 2 to the holding member 1 and integrating them. In the case of bonding with the non-flux solder 12, there is no possibility that impurity gas is generated during film formation. Therefore, for example, when the organic EL light emitting layer is formed by vapor deposition, the problem that the organic EL light emitting layer is damaged by the impurity gas can be solved.
図６は、本発明によるマスクの製造方法の第３の実施形態の要部を示す工程図である。ここでは、第１の実施形態と異なる部分について説明する。
この第３の実施形態は、第２ステップが半乾燥状態のフィルム状樹脂に保持部材１を圧着して行われる点で第１の実施形態と相違している。
FIG. 6 is a process diagram showing the main part of the third embodiment of the mask manufacturing method according to the present invention. Here, a different part from 1st Embodiment is demonstrated.
The third embodiment is different from the first embodiment in that the second step is performed by pressing the holding member 1 onto a semi-dried film-like resin.
より詳細には、第２ステップは、図６（ａ）に示すように、ガラス等の平坦面を有する母材７上に例えばポリイミド等の樹脂溶液１３を例えば約３０μｍの厚みにスピンコート又はディップコートした後、この樹脂溶液１３を加熱乾燥して半乾燥状態にするステップと、同図（ｂ）に示すように半乾燥状態の樹脂上に保持部材１を圧着した後、この半乾燥状態の樹脂を乾燥して保持部材１に一体的に保持されたフィルム２を形成するステップと、同図（ｃ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に保持部材１を吸着してフィルム２を母材７の表面から剥離するステップと、を含んでいる。 More specifically, in the second step, as shown in FIG. 6A, a resin solution 13 such as polyimide is spin-coated or dipped on a base material 7 having a flat surface such as glass to a thickness of about 30 μm, for example. After coating, the resin solution 13 is heated and dried to a semi-dry state, and the holding member 1 is pressure-bonded onto the semi-dry resin as shown in FIG. The step of drying the resin to form the film 2 integrally held by the holding member 1, and the holding member 1 is adsorbed to a flat adsorbing surface of a magnetic chuck (not shown) as shown in FIG. And peeling the film 2 from the surface of the base material 7.
なお、上記樹脂溶液１３の半乾燥状態は、加熱温度及び加熱時間を適宜制御して実現することができ、予め実験により加熱条件が決められる。さらに、同様にして樹脂を完全乾燥させるための条件も事前に決定される。 The semi-dry state of the resin solution 13 can be realized by appropriately controlling the heating temperature and the heating time, and the heating conditions are determined in advance by experiments. Furthermore, the conditions for completely drying the resin are similarly determined in advance.
図７は、上記第３の実施形態における第２ステップの変形例を示す図である。
この第２ステップは、先ず、同図（ａ）に示すようにガラス等の母材７上にフォトレジストや感光性ポリイミド等の感光性の樹脂溶液１３を約３０μｍの厚みにスピンコート又はディップコートするステップと、同図（ｂ）に示すようにフォトマスクを使用して上記感光性樹脂を露光した後、現像して保持部材１の開口部６に対応した位置に突状パターン１４を形成するステップと、同図（ｃ）に示すように保持部材１の開口部６と突状パターン１４とを合致させた状態で保持部材１を感光性樹脂上に圧着した後、予め定められた温度で加熱乾燥して保持部材１に一体的に保持されたフィルム２を形成するステップと、同図（ｄ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に保持部材１を吸着してフィルム２を母材７の表面から剥離するステップと、を含んでいる。
FIG. 7 is a diagram showing a modification of the second step in the third embodiment.
In this second step, first, as shown in FIG. 5A, a photosensitive resin solution 13 such as photoresist or photosensitive polyimide is spin-coated or dip-coated on a base material 7 such as glass to a thickness of about 30 μm. And exposing the photosensitive resin using a photomask as shown in FIG. 5B and developing to form a protruding pattern 14 at a position corresponding to the opening 6 of the holding member 1. As shown in FIG. 5C, the holding member 1 is pressure-bonded onto the photosensitive resin in a state where the opening 6 of the holding member 1 and the protruding pattern 14 are matched, and then at a predetermined temperature. The step of forming the film 2 integrally held by the holding member 1 by heating and drying, and adsorbing the holding member 1 to a flat adsorption surface of a magnetic chuck (not shown), for example, as shown in FIG. Film 2 is the surface of base material 7 It includes the steps of al peeling, the.
この場合、上記突状パターン１４を上部が狭く下部が広い縦断面台形状に形成すれば、保持部材１の開口部６と突状パターン１４との嵌合を突状パターン１４の側面をガイドとして容易に行うことができる。また、保持部材１の開口部６は、突状パターン１４により位置決め規制されるため、保持部材１の開口部６の位置精度を図６における場合よりも高くすることができる。 In this case, if the protruding pattern 14 is formed in a trapezoidal shape with a narrow upper part and a lower lower part, the fitting of the opening 6 of the holding member 1 and the protruding pattern 14 is performed using the side surface of the protruding pattern 14 as a guide. It can be done easily. Further, the positioning of the opening 6 of the holding member 1 is regulated by the protruding pattern 14, so that the positional accuracy of the opening 6 of the holding member 1 can be made higher than in the case of FIG. 6.
図８は、本発明によるマスクの製造方法の第４の実施形態の要部を示す工程図である。ここでは、第１の実施形態と異なる部分について説明する。
この第４の実施形態は、第２ステップが保持部材１上に樹脂溶液１３を塗布して行われる点で第１の実施形態と相違している。
FIG. 8 is a process diagram showing the main part of the fourth embodiment of the mask manufacturing method according to the present invention. Here, a different part from 1st Embodiment is demonstrated.
The fourth embodiment is different from the first embodiment in that the second step is performed by applying the resin solution 13 on the holding member 1.
より詳細には、第２ステップは、図８（ａ）に示すように、平板状の母材７の上面に保持部材１を載置するステップと、同図（ｂ）に示すように保持部材１の上面にポリイミド等の樹脂溶液１３を保持部材１の厚み以上の厚みに塗布した後、これを予め定められた温度で加熱乾燥して保持部材１に一体的に保持されたフィルム２を形成するステップと、同図（ｃ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に保持部材１を吸着してフィルム２を母材７の表面から剥離するステップと、を含んでいる。 More specifically, the second step includes a step of placing the holding member 1 on the upper surface of the flat base material 7 as shown in FIG. 8A, and a holding member as shown in FIG. After a resin solution 13 such as polyimide is applied on the upper surface of 1 to a thickness equal to or greater than the thickness of the holding member 1, this is heated and dried at a predetermined temperature to form a film 2 integrally held on the holding member 1. And the step of adsorbing the holding member 1 to a flat adsorbing surface of a magnetic chuck (not shown) and peeling the film 2 from the surface of the base material 7 as shown in FIG. .
この場合、図８（ａ），（ｂ）に示す各ステップは、保持部材１を吸着面がガラス等により平坦に形成された別の磁気チャックの上記吸着面上に載置し、該磁気チャックの磁力により保持部材１を吸着保持した状態で行うとよい。これにより、保持部材１の開口部６の形状及び位置を高精度に保つことができる。 In this case, in each step shown in FIGS. 8A and 8B, the holding member 1 is placed on the attraction surface of another magnetic chuck whose attraction surface is formed flat by glass or the like. The holding member 1 may be attracted and held by the magnetic force. Thereby, the shape and position of the opening 6 of the holding member 1 can be maintained with high accuracy.
図９は、本発明によるマスクの製造方法の第５の実施形態の要部を示す工程図である。ここでは、第１の実施形態と異なる部分について説明する。
この第５の実施形態は、第１の実施形態における第１ステップと第２ステップとの順番を入れ替えて実施する点で第１の実施形態と相違している。
FIG. 9 is a process diagram showing the main part of the fifth embodiment of the mask manufacturing method according to the present invention. Here, a different part from 1st Embodiment is demonstrated.
The fifth embodiment is different from the first embodiment in that the first step and the second step in the first embodiment are exchanged in order.
より詳細には、図９（ａ）に示すように、例えばステンレス鋼等からなる平板状の金属製母材１６の上面にフォトレジストや感光性ポリイミド等の感光性の樹脂溶液１３を約３０μｍの厚みにスピンコート又はディップコートするステップと、同図（ｂ）に示すようにフォトマスクを使用して感光性樹脂を露光した後、現像して保持部材１の開口部６に対応した位置に島パターン１５（フィルム２に相当）を形成するステップと、同図（ｃ）に示すように島パターン１５の周囲領域にニッケル又はニッケル合金等の磁性膜を約３０μｍの厚みにメッキして保持部材１を形成するステップと、同図（ｄ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に保持部材１を吸着して保持部材１と島パターン１５とを一体的に金属製母材１６の表面から剥離するステップと、含んでいる。 More specifically, as shown in FIG. 9A, a photosensitive resin solution 13 such as a photoresist or photosensitive polyimide is applied to the upper surface of a flat metal base material 16 made of, for example, stainless steel. A step of spin coating or dip coating on the thickness, and exposing the photosensitive resin using a photomask as shown in FIG. 5B, and developing the island to a position corresponding to the opening 6 of the holding member 1 A step of forming the pattern 15 (corresponding to the film 2), and a magnetic film such as nickel or a nickel alloy is plated to a thickness of about 30 μm around the island pattern 15 as shown in FIG. As shown in FIG. 4D, for example, the holding member 1 is attracted to a flat attracting surface of a magnetic chuck (not shown) to integrally hold the holding member 1 and the island pattern 15 together with a metal base material. 16 Peeling from the surface of the substrate.
この場合、フォトリソグラフィー技術を使用して形成した樹脂製の島パターン１５の周囲領域に磁性膜をメッキ形成して保持部材１を作製しているので、保持部材１の開口部６を高精度に形成することができる。 In this case, since the holding member 1 is produced by plating the magnetic film around the resin island pattern 15 formed by using the photolithography technique, the opening 6 of the holding member 1 is formed with high accuracy. Can be formed.
１…保持部材
２…フィルム
３…基板
４…開口パターン
５…ブリッジ
６…開口部
７…母材
１３…樹脂溶液
１５…島パターン
１６…金属製母材
１７…第１の磁気チャック
１８…第２の磁気チャック
DESCRIPTION OF SYMBOLS 1 ... Holding member 2 ... Film 3 ... Board | substrate 4 ... Opening pattern 5 ... Bridge 6 ... Opening part 7 ... Base material 13 ... Resin solution 15 ... Island pattern 16 ... Metal base material 17 ... 1st magnetic chuck 18 ... 2nd Magnetic chuck
Claims (7)
平板状の磁性金属材料に、前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部を設けて保持部材を形成する第１ステップと、
前記保持部材の一面に、該保持部材と一体化させて可視光を透過する樹脂製のフィルムを保持する第２ステップと、
第１の磁気チャック上に載置された前記基板上の前記薄膜パターン形成領域が前記保持部材の前記開口部内に位置するように前記保持部材を前記基板に対して位置合わせした後、前記第１の磁気チャックの磁力により前記保持部材を吸着して前記フィルムを前記基板面に密着させる第３ステップと、
前記保持部材の前記開口部内の前記薄膜パターン形成領域に対応した前記フィルムの部分にレーザ光を照射して、前記薄膜パターンと同形状の貫通する開口パターンを形成する第４ステップと、
第２の磁気チャックの磁力により前記保持部材を吸着して該保持部材及び前記フィルムを一体的に前記基板上から剥離する第５ステップと、
を行なうことを特徴とするマスクの製造方法。 A method of manufacturing a mask for forming a thin film pattern having a fixed shape on a substrate,
A first step of forming a holding member in a flat magnetic metal material by providing a plurality of through-holes having a shape larger than that of the thin film pattern corresponding to the formation region of the thin film pattern;
On one surface of the holding member, a second step of unites with the holding member a resin film which transmits visible light to hold,
After the holding member is aligned with the substrate such that the thin film pattern forming region on the substrate placed on the first magnetic chuck is located in the opening of the holding member, the first A third step of adsorbing the holding member by the magnetic force of the magnetic chuck to adhere the film to the substrate surface;
A fourth step of irradiating a portion of the film corresponding to the thin film pattern forming region in the opening of the holding member with a laser beam to form an opening pattern having the same shape as the thin film pattern;
A fifth step of attracting the holding member by the magnetic force of the second magnetic chuck and peeling the holding member and the film integrally from the substrate;
A method for manufacturing a mask, characterized in that:
The said film is a polyimide, The manufacturing method of the mask of any one of Claims 1-6 characterized by the above-mentioned.
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| JP2011242090A JP5899585B2 (en) | 2011-11-04 | 2011-11-04 | Mask manufacturing method |
| KR1020147009752A KR102078888B1 (en) | 2011-09-16 | 2012-09-14 | Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method |
| PCT/JP2012/073617 WO2013039196A1 (en) | 2011-09-16 | 2012-09-14 | Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method |
| CN201280044893.9A CN103797149B (en) | 2011-09-16 | 2012-09-14 | Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method |
| TW101133791A TWI555862B (en) | 2011-09-16 | 2012-09-14 | Evaporation mask, method for manufacturing the same and thinfilm pattern forming method |
| US14/214,428 US9334556B2 (en) | 2011-09-16 | 2014-03-14 | Deposition mask, producing method therefor and forming method for thin film pattern |
| US14/746,727 US9586225B2 (en) | 2011-09-16 | 2015-06-22 | Deposition mask, producing method therefor and forming method for thin film pattern |
| US15/071,125 US9555434B2 (en) | 2011-09-16 | 2016-03-15 | Deposition mask, producing method therefor and forming method for thin film pattern |
| US15/071,116 US9555433B2 (en) | 2011-09-16 | 2016-03-15 | Deposition mask, producing method therefor and forming method for thin film pattern |
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| CN105336855B (en) | 2012-01-12 | 2020-08-04 | 大日本印刷株式会社 | Vapor deposition mask device preparation body |
| JP6347105B2 (en) * | 2013-06-28 | 2018-06-27 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask, method for manufacturing vapor deposition mask with metal frame, and method for manufacturing organic semiconductor element |
| JP6078818B2 (en) * | 2013-07-02 | 2017-02-15 | 株式会社ブイ・テクノロジー | Film-forming mask and film-forming mask manufacturing method |
| JP6197423B2 (en) * | 2013-07-11 | 2017-09-20 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask manufacturing method, and organic semiconductor element manufacturing method |
| WO2018142464A1 (en) * | 2017-01-31 | 2018-08-09 | 堺ディスプレイプロダクト株式会社 | Production method for vapor deposition mask, vapor deposition mask, and production method for organic semiconductor element |
| JP6521003B2 (en) * | 2017-08-23 | 2019-05-29 | 大日本印刷株式会社 | Vapor deposition mask, method of manufacturing vapor deposition mask, and method of manufacturing organic semiconductor device |
| US20200002801A1 (en) * | 2017-09-28 | 2020-01-02 | Sharp Kabushiki Kaisha | Vapor deposition mask and manufacturing method for vapor deposition mask |
| JP6588125B2 (en) * | 2018-04-26 | 2019-10-09 | 堺ディスプレイプロダクト株式会社 | Vapor deposition mask manufacturing method, vapor deposition mask, and organic semiconductor element manufacturing method |
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| JP2008274373A (en) * | 2007-05-02 | 2008-11-13 | Optnics Precision Co Ltd | Mask for vapor deposition |
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