JP6521003B2 - Vapor deposition mask, method of manufacturing vapor deposition mask, and method of manufacturing organic semiconductor device - Google Patents

Vapor deposition mask, method of manufacturing vapor deposition mask, and method of manufacturing organic semiconductor device Download PDF

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JP6521003B2
JP6521003B2 JP2017160459A JP2017160459A JP6521003B2 JP 6521003 B2 JP6521003 B2 JP 6521003B2 JP 2017160459 A JP2017160459 A JP 2017160459A JP 2017160459 A JP2017160459 A JP 2017160459A JP 6521003 B2 JP6521003 B2 JP 6521003B2
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mask
metal
vapor deposition
deposition mask
resin
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JP2017210687A5 (en
JP2017210687A (en
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小幡 勝也
勝也 小幡
武田 利彦
利彦 武田
祐行 西村
祐行 西村
飯田 満
満 飯田
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大日本印刷株式会社
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  The present invention relates to a deposition mask, a method of manufacturing a deposition mask, and a method of manufacturing an organic semiconductor device.

  Conventionally, in the manufacture of an organic EL element, for forming the organic layer or cathode electrode of the organic EL element, for example, it is made of a metal in which a large number of minute slits are arranged in parallel at minute intervals in a region to be deposited. Vapor deposition masks have been used. When this deposition mask is used, the deposition mask is placed on the surface of the substrate to be deposited and held from the back by using a magnet, but since the rigidity of the slits is extremely small, when the deposition mask is held on the substrate surface It is easy for distortion to occur in the slit, which has been an obstacle to the enlargement of the product in which the definition is increased or the slit length is increased.

  For the deposition mask for preventing the distortion of the slit, various studies have been made. For example, in Patent Document 1, a base plate also serving as a first metal mask provided with a plurality of openings, and covering the openings There has been proposed a deposition mask comprising a second metal mask provided with a large number of fine slits in the region and a mask tension holding means for positioning the second metal mask on the base plate in a state of being pulled in the longitudinal direction of the slits. That is, a deposition mask in which two types of metal masks are combined has been proposed. According to this vapor deposition mask, it is said that the slit accuracy can be secured without causing distortion in the slit.

  Recently, with the increase in the size of products using organic EL elements or in the size of substrates, the demand for the increase in size of deposition masks is also increasing, and is used for the production of deposition masks made of metal. The metal plate is also getting larger. However, it is difficult to precisely form the slits in a large metal plate by the current metal processing technology, and even if the distortion of the slit portion can be prevented by the method proposed in the above-mentioned Patent Document 1, etc. It can not cope with the high definition of the slit. Moreover, when it is set as the vapor deposition mask which consists only of metals, the mass will also increase with an increase in size, and since the total mass including a flame | frame will also increase, it will cause a trouble in handling.

  In the vapor deposition mask proposed above, in order to reduce the weight of the vapor deposition mask, it is necessary to reduce the thickness of the vapor deposition mask made of metal. However, if the thickness of the vapor deposition mask made of metal is reduced, the strength of the vapor deposition mask is lowered accordingly, and if the vapor deposition mask is deformed, handling becomes difficult. Problems will arise.

JP 2003-332057 A

  The present invention has been made in view of such a situation, and it is possible to satisfy both high definition and weight reduction even when the size is increased, and to provide a deposition mask capable of forming a high definition deposition pattern. It is a main object to provide, to provide a method of producing the vapor deposition mask, and to provide a method of producing an organic semiconductor device capable of precisely producing an organic semiconductor device.

The present invention for solving the above problems is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, wherein a metal mask provided with a plurality of slits and a resin mask are laminated, and the resin mask Are provided with openings necessary for constructing a plurality of screens, the openings correspond to a pattern to be deposited and produced, and the slits are provided at positions overlapping at least one entire screen, A plurality of metal convex portions are provided on the resin mask corresponding to positions overlapping the slits, and the plurality of metal convex portions are provided independently of the metal mask. Do.
Moreover, the vapor deposition mask of one embodiment is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, and a metal mask provided with a plurality of slits and a resin mask are laminated, and the resin mask is used as the resin mask. Are provided with openings necessary for constructing a plurality of screens, the openings correspond to a pattern to be vapor deposited and prepared, and each of the slits is provided at a position overlapping at least one entire screen, the slits A plurality of metal convex portions are provided on the resin mask corresponding to the overlapping position. The resin mask is provided with openings necessary for forming a plurality of screens, and the openings correspond to a pattern to be vapor-deposited, and the respective slits overlap at least one entire screen. And a plurality of metal convexes are provided on the resin mask corresponding to the positions overlapping the slits.

  In the vapor deposition mask of one embodiment, a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to a pattern to be vapor deposited are stacked, and all of the plurality of openings are formed. A plurality of metal convexes are provided on the resin mask provided at a position overlapping with the one through hole and corresponding to the position overlapping with the one through hole.

The present invention for solving the above problems is a method of manufacturing a vapor deposition mask, wherein a metal mask provided with a plurality of slits on a resin plate provided with a plurality of metal projections on the surface is the metal In order to prepare a plurality of screens by applying a laser to the resin plate from the metal mask side through the slits and preparing a metal mask with resin plate laminated so that the convex portions and the slits overlap. And a resin mask forming step of forming necessary openings in the resin plate, and a metal mask provided with a slit at a position overlapping with at least one of the plurality of screens is used as the metal mask, In the metal plate with a resin plate prepared in the preparation step, the plurality of metal projections are provided independently of the metal mask. That.
Further, in the method of manufacturing a vapor deposition mask according to one embodiment, a metal mask provided with a plurality of slits is formed on a resin plate provided with a plurality of metal projections on the surface such that the metal projections and the slits overlap each other. Preparing a metal plate with a resin plate laminated on the resin plate, and irradiating the resin plate with a laser from the metal mask side through the slit to form openings necessary for forming a plurality of screens in the resin plate And forming a resin mask, and using a metal mask provided with a slit at a position overlapping with at least one of the plurality of screens as the metal mask.

  Moreover, in the manufacturing method of the said vapor deposition mask, the metal mask provided with the slit prepared at the said preparatory process is obtained by etching-processing the said metal plate, after laminating | stacking a resin board and a metal plate. In the etching of the metal plate, the slit and the metal convex portion may be formed simultaneously.

  Further, in the method of manufacturing a vapor deposition mask according to one embodiment, a metal mask provided with one through hole on a resin plate provided with a plurality of metal projections on the surface includes the metal convex portion and the one through hole And a step of preparing a metal mask with a resin plate laminated so as to overlap with each other, and irradiating the resin plate with a laser from the metal mask side through the one through hole, and resin at a position overlapping with the one through hole And forming a plurality of openings in the plate.

  Moreover, in the manufacturing method of the said vapor deposition mask, the metal mask provided with one through-hole prepared by the said preparatory process is obtained by etching-processing the said metal plate, after laminating | stacking a resin plate and a metal plate. In the etching process of the metal plate, the one through hole and the metal convex portion may be simultaneously formed.

  In the above manufacturing method, the resin mask forming step may be performed after fixing the metal mask with a resin plate on a metal frame.

  Further, the present invention for solving the above-mentioned problems is a method of manufacturing an organic semiconductor device, wherein a metal frame attached vapor deposition mask in which a vapor deposition mask is welded and fixed to a metal frame is used for manufacturing the organic semiconductor device. The deposition mask to be welded and fixed to the metal frame is laminated with a metal mask provided with a plurality of slits and a resin mask, and the resin mask has openings necessary for forming a plurality of screens. The openings correspond to a pattern to be deposited and manufactured, and the slits are provided at positions overlapping at least one entire screen, and a plurality of resin masks corresponding to positions overlapping the slits are provided. It is characterized in that a metal convex portion is provided, and the plurality of metal convex portions are vapor deposition masks provided independently of the metal mask.

  The method of manufacturing an organic semiconductor device according to one embodiment is a method of manufacturing an organic semiconductor device using a metal frame-attached vapor deposition mask in which a vapor deposition mask is welded and fixed to a metal frame, and is welded and fixed to the metal frame. The vapor deposition mask is formed by laminating a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to a pattern to be vapor deposited, all of the plurality of openings being the one The vapor deposition mask is characterized in that it is provided at a position overlapping with the through hole, and a plurality of metal convex portions are provided on the resin mask corresponding to the position overlapping with the one through hole.

  According to the vapor deposition mask of the present invention, both high definition and light weight can be satisfied even when the size is enlarged, and a highly precise vapor deposition pattern can be formed. Further, according to the method of manufacturing a vapor deposition mask of the present invention, the vapor deposition mask having the above-mentioned features can be manufactured easily. Moreover, according to the method for manufacturing an organic semiconductor device of the present invention, the organic semiconductor device can be manufactured with high accuracy.

It is the front view seen from the metal mask side of the vapor deposition mask of 1st Embodiment. It is a partial expanded sectional view of the vapor deposition mask shown in FIG. 1, (a) is an A-A sectional view, (b) is a B-B sectional view, (c) is a sectional view seen from the arrow X side. It is the front view which looked at the vapor deposition mask of a 1st embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of a 1st embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of a 1st embodiment from the metal mask side. It is a schematic sectional drawing of the vapor deposition mask of 1st Embodiment. It is the front view which looked at the vapor deposition mask of a 1st embodiment from the resin mask side. It is a schematic sectional drawing which shows the relationship between a shadow and the thickness of a metal mask. It is the front view which looked at the vapor deposition mask of a 1st embodiment from the metal mask side. It is the top surface shape of the metal convex part when viewed from the metal mask side It is the front view which looked at the vapor deposition mask of a 2nd embodiment from the metal mask side. It is the elements on larger scale sectional drawing which looked at the vapor deposition mask shown in FIG. 11 from the arrow X side. It is the front view which looked at the vapor deposition mask of a 2nd embodiment from the metal mask side. It is the elements on larger scale sectional drawing which looked at the vapor deposition mask shown in FIG. 13 from the arrow X side. It is the front view which looked at the vapor deposition mask of a 2nd embodiment from the metal mask side. It is a schematic sectional drawing of the vapor deposition mask of 2nd Embodiment. It is the front view which looked at the vapor deposition mask of a 2nd embodiment from the resin mask side. It is a schematic sectional drawing which shows the relationship between a shadow and the thickness of a metal mask. It is the front view which looked at the vapor deposition mask of a 2nd embodiment from the metal mask side. It is a schematic sectional drawing which shows an example of the manufacturing method of the vapor deposition mask of 1st Embodiment. It is a figure which shows an example of the method of forming a metal convex part. It is a schematic sectional drawing which shows an example of the manufacturing method of the vapor deposition mask of 2nd Embodiment.

  Hereinafter, the vapor deposition mask 100 of the present invention will be specifically described with reference to the drawings according to the first embodiment and the second embodiment. In the vapor deposition mask 100 of the first embodiment and the second embodiment, as described later, a plurality of metal convex portions 40 are provided on the resin mask 20 corresponding to the position overlapping the slit 15 or one through hole 16. Common features are provided.

<Evaporation mask of the first embodiment>
As shown in FIGS. 1 to 6 and 9, the vapor deposition mask 100 according to the first embodiment of the present invention is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, and provided with a plurality of slits 15 The metal mask 10 and the resin mask 20 are stacked, and the resin mask 20 is provided with openings 25 necessary for forming a plurality of screens, and each slit 15 is at a position overlapping at least one entire screen. A plurality of metal convexes 40 are provided on the resin mask 20 which is provided and corresponds to the position overlapping the slit 15. 1, 3 to 5, and 9 (a) are front views of the vapor deposition mask showing an example of the vapor deposition mask according to the first embodiment, as viewed from the metal mask side, (b) and (c). These are the partially expanded front views of the location corresponding to 1 screen of the vapor deposition mask by which the metal convex part 40 is arrange | positioned, and are the figures seen from the metal mask side. Fig.2 (a) is AA sectional drawing of the vapor deposition mask of 1st Embodiment shown in FIG. 1, (b) is BB sectional drawing, (c) is the schematic sectional view seen from the arrow X side It is. 6 is a partially enlarged schematic cross-sectional view of a modification of the vapor deposition mask of the first embodiment shown in FIG.

  The vapor deposition mask 100 according to the first embodiment is a vapor deposition mask used to simultaneously form vapor deposition patterns for a plurality of screens, and one vapor deposition mask 100 can simultaneously form vapor deposition patterns corresponding to a plurality of products. it can. The "opening" as referred to in the present specification means a pattern to be produced using the vapor deposition mask 100 of the first embodiment, and, for example, when the vapor deposition mask is used to form an organic layer in an organic EL display The shape of the opening 25 is the shape of the organic layer. In the vapor deposition mask 100 of the first embodiment, the vapor deposition material released from the vapor deposition source passes through the opening 25 to form a vapor deposition pattern corresponding to the opening 25 on the vapor deposition target. In addition, “one screen” consists of an assembly of openings 25 corresponding to one product, and when the one product is an organic EL display, it is necessary to form one organic EL display An aggregate of the organic layers, that is, an aggregate of the openings 25 to be the organic layer is “one screen”. And in the vapor deposition mask 100 of the first embodiment, in order to simultaneously form vapor deposition patterns for a plurality of screens, the “one screen” is arranged on the resin mask 20 for a plurality of screens at a predetermined interval. . That is, the resin mask 20 is provided with the opening 25 necessary for forming a plurality of screens.

  The present invention is characterized in that the metal mask 10 is provided with a plurality of slits 15 and each slit is provided at a position overlapping at least one entire screen. In other words, between the openings 25 necessary to form one screen, the metal wire portions having the same length as the longitudinal length of the slit 15 between the openings 25 adjacent in the lateral direction, or adjacent in the longitudinal direction It is characterized in that there is no metal wire portion having the same length as the lateral length of the slit 15 between the opening portions 25. Hereinafter, the metal wire portion having the same length as the longitudinal length of the slit 15 between the openings 25 adjacent in the lateral direction, and the same length as the lateral length of the slit 15 between the openings 25 adjacent in the longitudinal direction The term "metal wire portion" may be generically referred to simply as "metal wire portion".

  According to the vapor deposition mask 100 of the first embodiment, when the size of the openings 25 necessary to configure one screen and the pitch between the openings 25 configuring one screen are narrowed, for example, a screen exceeding 400 ppi Even if the size of the openings 25 and the pitch between the openings 25 are extremely small in order to form the above, it is possible to prevent interference due to the metal wire portion, and a high definition image can be formed. It becomes. When one screen is divided by a plurality of slits, in other words, when a metal wire portion exists between the openings 25 constituting one screen, FIGS. 8A and 8B. As the pitch between the openings 25 constituting one screen becomes narrower as shown in Fig. 4A, the metal wire portion existing between the openings 25 becomes a hindrance when forming a vapor deposition pattern on the object to be vapor-deposited. It becomes difficult to form a fine deposition pattern. In other words, when a metal wire portion exists between the openings 25 constituting one screen, the metal wire portion causes the occurrence of shadows, making it difficult to form a high definition screen. In addition, with shadow, a part of vapor deposition material discharge | released from the vapor deposition source collides with the inner wall face of the slit 15 of the metal mask 10, and the inner wall face of the said metal wire part, and does not reach the vapor deposition object. It refers to the phenomenon that an undeposited portion with a thickness smaller than the target deposition thickness occurs. In particular, as the shape of the opening 25 is miniaturized, the influence of the shadow by the metal wire portion existing between the openings 25 in one screen increases.

  In the formation of a vapor deposition pattern on a vapor deposition target using a vapor deposition mask, for example, the formation of a vapor deposition pattern on a glass substrate or a silicon substrate, the vapor deposition target and the resin mask provided with an opening face each other. In a state in which the deposition target and the deposition mask are stacked, and then the deposition target and the deposition mask 100 positioned in front of the deposition target are attracted by the magnet disposed behind the deposition target. To be done. By the way, in the configuration of the vapor deposition mask in which the metal wire portion is not present between the openings 25 in one screen, the attraction between the vapor deposition object and the vapor deposition mask by the magnet is performed only in the metal portion constituting the inner wall surface of the slit 15 It will be. In other words, magnet attraction is performed only in the vicinity of the outer periphery of one screen or a plurality of screens.

  When the size of one screen overlapping with one slit 15 is increased in the form of attraction by the above magnet, or when one slit 15 overlaps with a plurality of screens, the deposition target object and the deposition mask The openings 25 constituting each screen can not be brought into intimate contact with the object to be vapor-deposited only by attracting only in the vicinity of the outer circumference of one screen or a plurality of screens. There will be a gap between them. This gap can be particularly noticeable near the center position of the slit 15 where the influence of the attraction by the magnet is small.

  When a gap is generated between the deposition target and the deposition mask, in other words, when a gap is created between each opening 25 constituting one screen of the resin mask and the deposition target When forming a vapor deposition pattern on a vapor deposition target, a vapor deposition material advancing in the direction of the vapor deposition target wraps around in a direction perpendicular to the traveling direction from a gap generated between the vapor deposition target and the vapor deposition mask. And, originally, each vapor deposition pattern which should be formed at a predetermined interval is connected by the vapor deposition material which goes around in the direction orthogonal to the traveling direction from the gap, or the vapor deposition pattern size is thick, etc. This causes problems and interferes with the formation of high-definition vapor deposition patterns. In addition, vapor deposition pattern thickness means the phenomenon in which the vapor deposition pattern of a bigger shape than the vapor deposition pattern made into the objective is formed.

  Therefore, in the vapor deposition mask of the first embodiment, as shown in FIGS. 1 to 6 and FIG. 9, a plurality of metal convex portions 40 are provided on the resin mask 20 corresponding to the position overlapping with the slits 15. It features. According to the vapor deposition mask 100 of the first embodiment having this feature, as shown in the drawing, the metal convex portion not only in the vicinity of the outer periphery of one screen but also in the periphery of each opening 25 present in the slit 15 The deposition target and the deposition mask 100 can be attracted by a magnet 40. As a result, the openings 25 provided in the resin mask 20 can be sufficiently in close contact with the object to be vapor-deposited, and the generation of gaps can be effectively prevented. Hereinafter, the metal convex part 40 is demonstrated. In addition, the metal convex part 40 demonstrated below is the same also about the vapor deposition mask of 2nd Embodiment mentioned later.

  The material of the metal convex portion 40 is not particularly limited, as long as it contains a magnetic material that can be attracted by a magnet. Magnetic materials include pure iron, nickel, carbon steel, W steel, Cr steel, Co steel, K steel, MK steel, NKS steel, Cunico steel, Al-Fe alloy, iron nickel alloy, iron nickel alloy, and invar material Etc. can be mentioned. In addition, the metal convex portion 40 in the present invention may be made of only a magnetic substance, or a material having no magnetism may contain a magnetic material. A resin material etc. can be mentioned as a material which does not have magnetism. That is, the metal convex part 40 should just have magnetism as a result. Further, as will be described later, one metal plate may be used to form the slits 15 of the metal mask 10, and at the same time, the metal protrusion 40 may be formed using the one metal plate. In this case, the material of the metal mask and the material of the metal projections 40 are the same material. It is not limited that the material of the metal mask 10 and the material of the metal convex portion 40 are the same material, and a material different from the material of the metal mask 10 is used, separately on the resin mask 20 The convex part 40 can also be formed.

  There is no particular limitation on the shape of the metal convex portion 40. For example, a circle shown in FIG. 10 (a), an ellipse shown in FIG. 10 (b), a square or a rectangle shown in FIGS. 10 (c) and 10 (d), There can be mentioned a diamond shape shown in FIGS. 10 (e) and 10 (f), a star-like pillar shape, a frustum shape and the like. FIG. 10 shows the top surface shape of the metal convex portion 40 when the metal convex portion 40 is viewed from the metal mask side.

  The size of the metal convex portion 40 is not particularly limited, but at least the dimension needs to be shorter than the length in the longitudinal direction and the lateral direction of the slit 15. When the metal convex portion has the same dimension as the length in the longitudinal direction and the lateral direction of the slit 15, the metal convex portion functions as a metal wire portion, and the occurrence of shadow can not be prevented. In addition, the size of the metal convex part 40 said here is the center point of the said bottom face shape or top face shape, as shown to the code | symbol (S) of FIG. Means the dimension of the longest line among the lines passing through. That is, in the present invention, the dimension of the metal convex portion 40 may be smaller than the length in the vertical direction of the slit 15 and the length in the horizontal direction.

  In particular, it is preferable that the dimension of the metal convex portion 40 be shorter than the pitch dimension in the longitudinal direction and the lateral direction of the adjacent openings 25 in the openings 25 constituting one screen. Moreover, it is preferable that it is a dimension shorter than the opening width of each opening 25 in the longitudinal direction and the lateral direction.

  Further, in the illustrated embodiment, the metal convex portion 40 is provided on the surface of the resin mask 20, but a portion of the metal convex portion 40 is embedded in the resin mask 20, and a portion of the surface is the resin mask It can be in the form of projecting from the surface of 20 (not shown).

  There is no particular limitation on the arrangement position of the metal convex portion 40 provided on the resin mask 20, and as shown in FIGS. 1, 3 to 5 and 9, it is appropriately arranged near each opening 25 constituting one screen. can do. In addition, as shown in FIG. 1, in order to create a further high-definition vapor deposition pattern, it is arranged regularly regularly in the vertical and horizontal directions, and from the center point of four openings 25 adjacent to each two openings. It is preferable that the metal convex part 40 is arrange | positioned in the position used as equidistant. By arranging the metal projection 40 at this position, the metal projection 40 does not exist in any cross section passing through the opening 25 as shown in FIG. It can prevent and it can be set as the vapor deposition mask which can form the still more high-definition vapor deposition pattern. That is, in order to further improve the prevention of the occurrence of shadows, it is preferable to reduce the area where the metal convex portion 40 is present in all longitudinal cross sections and horizontal cross sections passing through the opening. In the embodiment shown in FIGS. 1 and 5, the metal projections 40 do not exist in all longitudinal and transverse cross sections passing through the opening, and in the embodiment shown in FIG. The metal convex part 40 does not exist in the direction cross section, but in a part of the lateral cross section passing through the opening, the metal convex part 40 is present. Further, in the embodiment shown in FIG. 4, the metal convex portion 40 exists in a part of the vertical cross section passing through the opening, and the metal convex portion 40 does not exist in the horizontal cross section passing through the opening. . In this respect, FIGS. 1 and 5 can be said to be preferable modes for the vapor deposition mask of the first embodiment. In addition, in the form shown to each figure, although the metal convex part 40 is arrange | positioned regularly, you may be arrange | positioned at random, without having regularity. In addition, the number of metal projections 40 shown in each drawing may be appropriately reduced. Moreover, you may increase suitably as needed.

  Further, as shown in FIGS. 5A and 5B, in the case where one slit 15 overlaps the whole of a plurality of screens, not only the area corresponding to one screen of the resin mask 20 but each of the resin mask 20 The metal projections 40 can also be arranged in the corresponding area between the screens. Depending on the pitch between the screens in the vertical direction and the horizontal direction, when the pitch between the screens is wider than the pitch between the openings that make up one screen, the metal convex part disposed between the screens Since the No. 40 hardly affects the occurrence of shadows, according to this aspect, the adhesion between the deposition target and the deposition mask can be enhanced while maintaining the shadow generation preventing performance.

  The thickness of the metal projections 40 is not particularly limited, but is preferably the same thickness as the thickness of the metal mask 10 described later, or less than the thickness of the metal mask 10. When the thickness of the metal convex portion 40 is thicker than the thickness of the metal mask 10, the deposition material easily collides with the inner wall surface of the metal convex portion 40 at the time of formation of the vapor deposition pattern on the vapor deposition target, and a shadow is generated. There is a risk of In particular, in the present invention, the metal convex portion 40 attracts the deposition target and the deposition mask with a magnet to prevent generation of a gap that may occur between the deposition target and the opening 25 of the resin mask. The thickness of the metal convex portion 40 can be reduced to a target thickness that does not impair the function that can be attracted by the magnet. Although it can set suitably according to the magnetism by the material etc. of metal convex part 40, it is preferably in the range of 0.1 μm to 40 μm, and more preferably in the range of 0.5 μm to 30 μm. In the case where the thickness of the metal projection 40 is the above-mentioned preferable thickness, the size of the metal projection 40 is larger than the width in the vertical direction and the horizontal direction of the opening 25 or Regardless, it becomes possible to form a high-definition vapor deposition pattern without being substantially affected by shadows. In the form shown in each drawing, the thickness of the metal convex portion 40 is substantially equal to the thickness of the metal mask 10.

  According to the vapor deposition mask 100 of the first embodiment described above, weight reduction can be achieved as compared with the conventional vapor deposition mask. Specifically, assuming that the mass of the vapor deposition mask 100 of the first embodiment and the mass of the vapor deposition mask composed only of a conventionally known metal are compared assuming that the thickness of the entire vapor deposition mask is the same, The mass of the vapor deposition mask 100 of the first embodiment is reduced by the replacement of a part of the metal material of the known vapor deposition mask with a resin material. In addition, in order to achieve weight reduction by using a deposition mask made of only a metal, it is necessary to make the thickness of the deposition mask thin, etc. However, if the thickness of the deposition mask is made thin, the deposition mask should be used. When the size is increased, distortion may occur in the deposition mask or durability may decrease. On the other hand, according to the vapor deposition mask of the first embodiment, the resin mask 20 is present even if the thickness of the entire vapor deposition mask is increased in order to satisfy the distortion at the time of upsizing and the durability. Thus, the weight can be reduced as compared with a vapor deposition mask formed only of metal. The same applies to the vapor deposition mask of the second embodiment described later. Each of these will be specifically described below.

(Resin mask)
A conventionally known resin material can be appropriately selected and used for the resin mask 20, and the material is not particularly limited. However, high definition openings 25 can be formed by laser processing etc. It is preferable to use a lightweight material having a small dimensional change rate and moisture absorption rate. Such materials include polyimide resin, polyamide resin, polyamide imide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene- Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin and the like. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both of these conditions is particularly preferable . In the vapor deposition mask of the first embodiment, as described above, the resin mask 20 is made of a resin material capable of forming the openings 25 with high definition as compared with the metal material. Therefore, the deposition mask 100 having the high definition opening 25 can be obtained. The same applies to the vapor deposition mask of the second embodiment described later.

  The thickness of the resin mask 20 is also not particularly limited, but when vapor deposition is performed using the vapor deposition mask 100 of the first embodiment, a vapor deposition portion having a thickness smaller than the intended vapor deposition film thickness, a so-called shadow It is preferable that the resin mask 20 be as thin as possible to prevent the occurrence. However, if the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation or the like is increased. On the other hand, if it exceeds 25 μm, generation of shadow may occur. In consideration of this point, the thickness of the resin mask 20 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin mask 20 within this range, the risk of defects such as pinholes and deformation can be reduced, and the generation of shadows can be effectively prevented. In particular, by setting the thickness of the resin mask 20 to 3 μm or more and 10 μm or less, more preferably 4 μm or more and 8 μm or less, the influence of shadow when forming a high definition pattern exceeding 400 ppi can be more effectively prevented. . In the vapor deposition mask 100 of the first embodiment, the metal mask 10 and the resin mask 20 may be bonded directly or may be bonded via a pressure-sensitive adhesive layer, but the pressure-sensitive adhesive layer When the metal mask 10 and the resin mask 20 are bonded to each other, the total thickness of the resin mask 20 and the adhesive layer is 3 μm or more and 25 μm or less, preferably 3 μm or more and 10 μm or less in consideration of the shadow point. It is particularly preferable to set so as to be in the range of 4 μm to 8 μm. The same applies to the resin mask of the vapor deposition mask of the second embodiment described later.

  Further, since the vapor deposition mask 100 according to the first embodiment has a configuration in which the resin mask 20 and the metal mask 10 are stacked, the durability of the vapor deposition mask as a whole can be improved by the presence of the metal mask 10. As a result, handling performance, breakage and deformation are prevented.

  Next, an example of the opening 25 constituting one screen will be described with reference to FIGS. 1 and 3 to 6. In the illustrated embodiment, an area closed by a broken line is one screen. In the embodiment shown, for convenience of explanation, the aggregate of a small number of openings 25 is one screen, but it is not limited to this embodiment. For example, when one opening 25 is one pixel, one screen There may be openings 25 of several million pixels.

  In the embodiment shown in FIG. 1, one screen is constituted by an assembly of the openings 25 in which a plurality of openings 25 are provided in the vertical direction and the horizontal direction. In the embodiment shown in FIG. 3, one screen is constituted by an assembly of the openings 25 in which a plurality of openings 25 are provided in the lateral direction. Further, in the embodiment shown in FIG. 4, one screen is constituted by an assembly of the openings 25 in which a plurality of openings 25 are provided in the vertical direction. And in FIG.1, FIG.3, FIG.4, the slit 15 is provided in the position which overlaps with 1 whole screen. In addition, on the resin mask 20 overlapping the metal slits 15, metal convex portions 40 are provided.

  As described above, the slit 15 may be provided at a position overlapping only one screen, and as shown in FIGS. 5A and 5B, at a position overlapping the entire two or more screens. It may be provided. In FIG. 5A, in the resin mask 10 shown in FIG. 1, the slits 15 are provided at positions overlapping the entire two continuous screens in the lateral direction. In FIG. 5 (b), slits 15 are provided at positions overlapping with all three continuous screens in the vertical direction.

Next, the pitch between the openings 25 constituting one screen and the pitch between the screens will be described by taking the form shown in FIG. 1 as an example. There is no limitation in particular about the pitch between the opening parts 25 which comprise 1 screen, and the magnitude | size of the opening part 25, It can set suitably according to the pattern vapor-deposited and produced. For example, in the case of forming a high-definition vapor deposition pattern of 400 ppi, the horizontal pitch (P1) and the vertical pitch (P2) of the openings 25 adjacent to each other in the opening 25 constituting one screen are about 60 μm. It becomes. The size of the opening becomes 500μm 2 ~1000μm 2 about. Further, one opening 25 is not limited to one pixel, and for example, depending on the pixel arrangement, a plurality of pixels may be combined into one opening 25.

  The horizontal pitch (P3) and the vertical pitch (P4) between the screens are not particularly limited either, but as shown in FIG. 1, when one slit 15 is provided at a position overlapping the entire screen, A metal wire portion will be present between each screen. Therefore, the vertical pitch (P4) and the horizontal pitch (P3) between the respective screens are smaller than the vertical pitch (P2) and the horizontal pitch (P1) of the openings 25 provided in one screen. In this case, or in the case where they are substantially the same, the metal wire portion existing between the screens tends to be broken. Therefore, in consideration of this point, the pitch (P3, P4) between the screens is preferably wider than the pitch (P1, P2) between the openings 25 constituting one screen. An example of the inter-screen pitch (P3, P4) is about 1 mm to 100 mm. Note that the pitch between the screens means the pitch between adjacent openings in one screen and another screen adjacent to the one screen. The same applies to the pitch of the openings 25 and the pitch between the screens in the vapor deposition mask of the second embodiment described later.

  As shown in FIG. 5, when one slit 15 is provided at a position overlapping with the entire two or more screens, the slit may be formed between a plurality of screens provided in one slit 15. There will be no metal wire portion that constitutes the inner wall surface. Therefore, in this case, the pitch between two or more screens provided at the position overlapping with one slit 15 may be substantially equal to the pitch between the openings 25 constituting one screen.

  The cross-sectional shape of the opening 25 is not particularly limited either, and the opposing end faces of the resin mask forming the opening 25 may be substantially parallel, but as shown in FIG. 2 and FIG. It is preferable that the cross-sectional shape be a shape having a spread toward the deposition source. In other words, it is preferable to have a tapered surface that widens toward the metal mask 10 side. By setting the cross-sectional shape of the opening 25 to this configuration, it is possible to prevent the occurrence of shadows in the pattern to be formed by vapor deposition when vapor deposition is performed using the vapor deposition mask of the first embodiment. The taper angle θ can be appropriately set in consideration of the thickness of the resin mask 20 and the like, but the angle between the lower bottom end of the opening of the resin mask and the upper bottom end of the opening of the resin mask is It is preferably in the range of 5 ° to 85 °, more preferably in the range of 15 ° to 80 °, and still more preferably in the range of 25 ° to 65 °. In particular, within this range, it is preferable that the angle be smaller than the deposition angle of the deposition machine used. Furthermore, in FIG. 2 and FIG. 6, the end face forming the opening 25 has a linear shape, but is not limited to this, and has an outwardly convex curved shape, that is, the opening The entire shape of the portion 25 may be bowl-shaped. The opening 25 having such a cross-sectional shape is, for example, a multistage laser which appropriately adjusts the irradiation position of the laser and the irradiation energy of the laser at the time of forming the opening 25 or changes the irradiation position stepwise. It can be formed by irradiation. The same applies to the vapor deposition mask of the second embodiment described later. 2 and 6 are partial enlarged cross-sectional views of the vapor deposition mask 100 of the embodiment shown in FIG.

  Since the resin mask 20 uses a resin material, the opening 25 can be formed regardless of the processing method used in conventional metal processing, for example, the processing method such as the etching processing method or cutting. That is, the method of forming the opening 25 is not particularly limited, and various processing methods, for example, laser processing capable of forming the high definition opening 25, precision pressing, photolithography, etc. are used. The part 25 can be formed. The same applies to the vapor deposition mask of the second embodiment described later. The method of forming the opening 25 by a laser processing method or the like will be described later.

  As the etching method, for example, a spray etching method in which the etching material is sprayed from a jet nozzle at a predetermined spray pressure, a wet etching method in which the etching material is immersed in an etching solution filled with the etching material, and a spin etching method in which the etching material is dropped An etching method or a dry etching method using gas, plasma, or the like can be used.

  Further, in the present invention, since the resin mask 20 is used as the structure of the vapor deposition mask 100, very high heat is applied to the opening 25 of the resin mask 20 when vapor deposition is performed using the vapor deposition mask 100. A gas may be generated from an end face (see FIG. 6) forming the opening 25 of the resin mask 20, which may cause a reduction in the degree of vacuum in the vapor deposition apparatus. Therefore, in consideration of this point, it is preferable that the barrier layer 26 be provided on the end face of the resin mask 20 where the opening 25 is formed, as shown in FIG. By forming the barrier layer 26, it is possible to prevent gas from being generated from the end face of the resin mask 20 where the opening 25 is formed.

  The barrier layer 26 can be a thin film layer or a vapor deposition layer of an inorganic oxide, an inorganic nitride, or a metal. As the inorganic oxide, an oxide of aluminum, silicon, indium, tin, or magnesium can be used, and as the metal, aluminum or the like can be used. The thickness of the barrier layer 26 is preferably about 0.05 μm to 1 μm.

  Furthermore, the barrier layer 26 preferably covers the deposition source side surface of the resin mask 20 (not shown). By covering the deposition source side surface of the resin mask 20 with the barrier layer 26, the barrier property is further improved. The barrier layer is preferably formed by an inorganic oxide, and in the case of inorganic nitride, various PVD methods and CVD methods. In the case of metal, it is preferable to form by vacuum evaporation. Here, the evaporation source side surface of the resin mask 20 may be the entire surface of the resin mask 20 on the evaporation source side, and the surface of the resin mask 20 on the evaporation source side is exposed from the metal mask It may be only the part that The barrier layer 26 is similarly applicable to the vapor deposition mask of the second embodiment shown in FIG.

  Alternatively, a magnetic layer made of a magnetic material may be provided on the surface of the resin mask 20 not in contact with the metal mask 10 (not shown). By providing the magnetic layer, the resin mask and the object to be vapor-deposited can be brought into close contact with each other without gaps in cooperation with the metal convex portion 40, which can occur between the resin mask 20 and the object to be vapor-deposited It is possible to prevent the occurrence of the gap more effectively.

  As a material of a magnetic layer, nickel, cobalt, an iron nickel alloy etc. can be mentioned, for example. The thickness of the magnetic layer is not particularly limited, but is preferably 0.05 μm or more and 1 μm or less. The magnetic layer is similarly applicable to the vapor deposition mask of the second embodiment described later.

  FIG. 7 is a front view of another embodiment of the resin mask. As shown in FIG. 7, it is preferable that a groove 28 extending in the longitudinal direction or the lateral direction (vertical direction in the case of FIG. 7) of the resin mask 20 is formed on the resin mask 20. When heat is applied during deposition, the resin mask 20 thermally expands, which may cause changes in the size and position of the opening 25. However, the formation of the grooves 28 absorbs the expansion of the resin mask. It is possible to prevent the resin mask 20 from expanding in a predetermined direction as a whole and changing the size and position of the opening 25 as a result of the accumulation of thermal expansion occurring in various places of the resin mask. The formation position of the groove 28 is not limited, and may be provided between the openings 25 constituting one screen or at a position overlapping the opening 25 but is preferably provided between the vertical screens.

  Although the longitudinally extending grooves 28 are formed between the adjacent screens in FIG. 7, the present invention is not limited to this, and laterally extending grooves may be formed between the adjacent screens. Furthermore, it is also possible to form a groove in the aspect which combined these.

  The depth and the width of the groove 28 are not particularly limited. However, when the depth of the groove 28 is too deep or the width is too wide, the rigidity of the resin mask 20 tends to decrease. It is necessary to set in consideration of Further, the cross-sectional shape of the groove is not particularly limited, and may be arbitrarily selected in consideration of a processing method or the like such as a U-shape or a V-shape. The groove 28 is similarly applicable to the vapor deposition mask of the second embodiment shown in FIG.

(Metal mask)
The metal mask 10 is made of metal and provided with a plurality of slits 15. In the vapor deposition mask of the first embodiment, as described above, the slits 15 are provided at positions overlapping at least one entire screen. In other words, the opening 25 constituting one screen is provided at a position overlapping the one slit 15. The slit 15 has the same meaning as the opening.

  Next, using FIGS. 8A to 8C, generation of shadows, generation of shadows that can be generated due to the thickness of the metal mask 10, and slits are provided at positions overlapping at least one entire screen. The superiority of the vapor deposition mask 100 of one embodiment will be described. 8 (a) is a partially enlarged cross-sectional view of the vapor deposition mask in which the opening 25a constituting one screen is divided by the plurality of slits 15a, and FIG. 8 (b) is a cross-sectional view of FIG. In the vapor deposition mask shown in), the thickness of the metal mask is increased. FIG. 8C is a partially enlarged cross-sectional view showing an example of the vapor deposition mask 100 of the first embodiment in which one slit 15 is provided at a position overlapping with the entire screen, and the opening 25 in the illustrated embodiment. There is no metal projection 40 in the cross section passing through the. That is, it is a partial expanded sectional view equivalent to the BB cross section of FIG. FIG. 8D is a partially enlarged cross-sectional view showing a state in which the thickness of the metal mask 10 in the deposition mask 100 in FIG. 8C is increased. Further, in the illustrated embodiment, an aggregate of the openings 25 provided with five openings in the horizontal direction (arbitrary direction is arbitrary) is taken as one screen.

  As shown to Fig.8 (a), when the opening 25a which comprises 1 screen is divided | segmented by the some slit 15a, the metal wire which makes the wall surface of the slit 15a in a part of adjacent opening 25a The part will be present. When the pitch of the openings 25a and the shape of the openings 25a are miniaturized in order to form a high-definition vapor deposition pattern, metal wire portions exist between the openings 25a constituting one screen. In this case, the metal wire portion prevents passage of the deposition material released from the deposition source into the opening 25a, which makes it difficult to produce a high-definition deposition pattern. In addition, when the thickness of the metal mask 10a is reduced, the durability of the entire vapor deposition mask also decreases. When the thickness of the metal mask 10a is increased as shown in FIG. 8 (b) in order to improve the durability of the entire vapor deposition mask, the vapor deposition material released from the vapor deposition source is more included in the metal wire. It becomes easy to collide with the wall. As the amount of deposition material colliding with the inner wall increases, the amount of deposition material that can not reach the deposition target increases, and the occurrence of shadows becomes more prominent.

  On the other hand, in the vapor deposition mask of the first embodiment, as shown in FIG. 8C, the entire one screen, that is, all the openings 25 provided in one screen overlap with one slit 15. It is provided. Therefore, as shown in FIG. 8C, the deposition material can be passed through the opening 25 without waste, and the occurrence of shadows can be prevented. Further, as shown in FIG. 8D, even when the thickness of the metal mask 10 is increased to a certain extent, the influence of shadows is small, and a highly precise deposition pattern can be formed. In particular, in the present invention, even when the thickness of the metal mask 10 is about 100 μm, the occurrence of shadows can be prevented. By increasing the thickness of the metal mask 10, the durability of the entire vapor deposition mask 100 is improved. Therefore, with the vapor deposition mask of the first embodiment, while enabling the formation of a highly precise vapor deposition pattern, its thickness can be appropriately selected. Durability can be improved by setting. In the case where the metal wire portion is present, the metal wire portion is present in any cross section passing through the opening, but as shown in FIG. According to the vapor deposition mask of the first embodiment provided with the present invention, the metal convex portion 40 can be absent in at least a part of the cross section passing through the opening, and in any cross section passing through the opening As compared with the embodiment shown in FIGS. 8A and 8B in which the metal wire portion is present, the influence of the collision of the vapor deposition material is less or the occurrence of the shadow can be suppressed by eliminating the influence.

  The thickness of the metal mask 10 is not particularly limited, but is preferably 100 μm or less, more preferably 50 μm or less, and particularly preferably 35 μm or less in order to more effectively prevent the occurrence of shadows. preferable. The same applies to the metal mask of the second embodiment.

  Further, in the vapor deposition mask 100 of the first embodiment, in order to sufficiently prevent the occurrence of shadows, as shown in FIGS. 2 and 6, the sectional shape of the slit 15 is expanded toward the vapor deposition source. It is preferable to set it as a shape. With such a cross-sectional shape, even if the thickness of the entire vapor deposition mask is increased for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or improving durability, emission from the vapor deposition source The deposition material can reach the deposition target without causing the deposition material to collide with the surface of the slit 15 or the inner wall surface of the slit 15 or the like. More specifically, an angle formed by a straight line connecting the lower bottom end of the slit 15 of the metal mask 10, the upper bottom end of the slit 15 of the metal mask 10, and the bottom surface of the metal mask 10 is 5 ° to 85 °. It is preferably in the range, more preferably in the range of 15 ° to 80 °, and still more preferably in the range of 25 ° to 65 °. In particular, within this range, it is preferable that the angle be smaller than the deposition angle of the deposition machine used. Even if the metal mask 10 has a relatively large thickness for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or having the durability enhanced by adopting such a cross-sectional shape, it is released from the vapor deposition source. The deposition material can reach the deposition target without causing the deposition material to collide with the inner wall surface of the slit 15 or the like. This makes it possible to more effectively prevent the occurrence of shadows. The facing end faces of the openings 25 of the resin mask 20 may be substantially parallel, but as described above. Both the slit 15 of the metal mask 10 and the opening 25 of the resin mask 20 preferably have a cross-sectional shape which is a shape having a spread toward the deposition source side. The same applies to the metal mask of the second embodiment.

  In the illustrated embodiment, the opening shape of the slit 15 has a rectangular shape, but there is no particular limitation on the opening shape, and the opening shape of the slit 15 may be any shape such as trapezoidal or circular. . The same applies to the opening shape of the slits 15 of the metal mask of the second embodiment.

  The material of the metal mask 10 is not particularly limited, and those conventionally known in the field of vapor deposition masks can be appropriately selected and used, and examples thereof include metal materials such as stainless steel, iron nickel alloy, and aluminum alloy. . Among them, Invar material which is an iron-nickel alloy can be suitably used because it is less deformed by heat. The same applies to the metal mask of the second embodiment.

  In addition, when performing deposition on a substrate using the deposition mask 100 of the first embodiment, if it is necessary to arrange a magnet or the like behind the substrate and attract the deposition mask 100 in front of the substrate by magnetic force, metal The mask 10 is preferably formed of a magnetic material. As the metal mask 10 of magnetic substance, pure iron, nickel, carbon steel, W steel, Cr steel, Co steel, K steel, MK steel, MK steel, NKS steel, Cunico steel, Al-Fe alloy, iron nickel alloy, iron nickel alloy Inbar material etc. which are are mentioned. When the material of the metal mask 10 itself is not a magnetic material, the metal mask 10 may be provided with magnetism by dispersing the powder of the magnetic material in the material.

  FIG. 9A is a front view showing another aspect of the vapor deposition mask 100 of the first embodiment. As shown in FIG. 9, in the front view seen from the metal mask 10 side of the vapor deposition mask 100, the openings 25 constituting one screen may be alternately arranged in the lateral direction. That is, the openings 25 adjacent to each other in the horizontal direction may be arranged to be shifted in the vertical direction. By arranging in this way, even when the resin mask 20 is thermally expanded, the expansion occurring at various places can be absorbed by the opening 25, and the accumulation of expansion is prevented to cause large deformation. Can. In this case, the metal convex portion 40 is formed on a region having a wide space in a portion where the influence of the shadow is unlikely to occur, specifically, in the region on the resin mask 20 where the metal convex portion 40 can be arranged. It may be arranged appropriately. For example, as shown in FIG. 9 (a), a metal projection 40 is disposed between two adjacent openings in the longitudinal direction and one opening that overlaps the two openings 25 in the lateral direction. It is also good. Further, as shown in FIGS. 9B and 9C, in the case where the openings 25 are alternately arranged in the longitudinal direction and the lateral direction, the metal convex portion 40 is formed only between the adjacent openings in the longitudinal direction. It may be arranged. 9B and 9C show portions corresponding to one screen when viewed from the metal mask side of the vapor deposition mask of the embodiment in which a plurality of openings 25 constituting one screen are alternately arranged. And a slit is omitted. In FIG. 9B, the width in the lateral direction of the opening 25 and the width in the lateral direction of the top surface of the metal convex portion 40 have substantially the same size, and in FIG. The lateral width of the top surface of the metal convex portion 40 is smaller than the lateral width. The arrangement example of the metal convex portions 40 in the vapor deposition mask in which the openings 25 are alternately arranged is similarly applicable to the vapor deposition mask of the second embodiment shown in FIG.

<Evaporation mask of the second embodiment>
Next, the vapor deposition mask of the second embodiment will be described. As shown in FIGS. 11 and 12, the vapor deposition mask according to the second embodiment of the present invention includes a metal mask 10 provided with one through hole 16 and a plurality of openings 25 corresponding to a pattern to be vapor deposited and manufactured. And the resin mask 20 is stacked, and all of the plurality of openings 25 are provided at positions overlapping with one through hole provided in the metal mask 10, and a resin corresponding to the position overlapping with one through hole The feature is that a plurality of metal protrusions 40 are provided on the mask 20. 11 is a front view of the vapor deposition mask showing an example of the vapor deposition mask of the second embodiment as viewed from the metal mask side, and FIG. 12 is a perspective view of the vapor deposition mask shown in FIG. It is a partially expanded schematic sectional view.

  According to the vapor deposition mask 100 of the second embodiment, since the metal mask 10 is provided on the resin mask 20, the durability and the handling property of the vapor deposition mask 100 can be enhanced. In addition, when it is set as the vapor deposition mask which consists only of a resin mask, without providing the metal mask 10 on the resin mask 20, the durability and handling property of a vapor deposition mask will fall. In particular, in order to form a high-definition vapor deposition pattern, the thickness of the resin mask is preferably small. When the thickness of the resin mask is reduced, the durability of the vapor deposition mask consisting only of the resin mask or , Handling performance will further decline.

  Specifically, as shown in FIGS. 18 (a) and 18 (b), since there is no metal wire portion forming the wall surface of the through hole 16 between the openings 25, there is no influence of shadows. It becomes possible to form a highly precise deposition pattern. In other words, since the metal wire portion forming the wall surface of the through hole 16 is located in the vicinity of the end of the vapor deposition mask 100, a highly precise vapor deposition pattern can be formed without affecting the formation of the vapor deposition pattern. Is possible. Furthermore, as shown in FIG. 18B, even when the thickness of the metal mask 10 is increased, the thickness of the metal mask 10 can be made durable because it is hardly affected by shadows. The thickness and thickness can be increased to sufficiently satisfy the properties and the handling property, and the durability and the handling property can be improved while enabling the formation of a high definition vapor deposition pattern. In the case where the metal wire portion is present, the metal wire portion is present in any cross section passing through the opening, but as shown in FIG. 11, the metal convex portion 40 is provided. According to the vapor deposition mask of the second embodiment, in at least a part of the cross section passing through the opening, the metal projection 40 can be absent, and in any cross section passing through the opening, the metal wire Compared with the form in which the portion is present, the impact of the deposition material on the impact can be reduced, or the occurrence of shadow can be suppressed.

  Also in the vapor deposition mask of the second embodiment, as in the case of the vapor deposition mask of the first embodiment, even when the thickness of the resin mask 20 is reduced, the presence of the metal mask 10 makes the vapor deposition mask 100 sufficient. Durability and handling can be provided. Moreover, according to the vapor deposition mask 100 of 2nd Embodiment, weight reduction of a vapor deposition mask can be achieved. The reasons for these are the same as the reasons described for the vapor deposition mask of the first embodiment.

  In the vapor deposition mask 100 of the second embodiment, a metal mask 10 having one through hole 16 is provided on a resin mask 20 having a plurality of openings 25, and all of the plurality of openings 25 are It is provided at a position overlapping the one through hole 16. In the vapor deposition mask 100 of the second embodiment having this configuration, no metal wire portion is present between the openings 25. Therefore, as described in the vapor deposition mask of the first embodiment, interference due to the metal wire portion is not generated. It becomes possible to form a highly precise vapor deposition pattern as the size of the opening 25 provided in the resin mask 20 without receiving it.

  Further, for the same reason as described in the vapor deposition mask of the first embodiment, in the vapor deposition mask 100 of the second embodiment, the surface on the side overlapping the one through hole 16 of the resin mask 20 is A plurality of the metal projections 40 described above are provided. Therefore, also in the vapor deposition mask of the second embodiment, it is possible to prevent the generation of a gap that may occur between the vapor deposition target and the vapor deposition mask 100. In other words, the deposition target can be sufficiently in close contact with the opening 25. Thereby, also in the vapor deposition mask 100 of the second embodiment, it is possible to form a highly precise vapor deposition pattern. As for the metal convex portion 40, the one described in the vapor deposition mask of the first embodiment can be used as it is unless otherwise noted, and the detailed description thereof is omitted here.

(Resin mask)
The resin mask 20 in the vapor deposition mask of the second embodiment is made of a resin, and as shown in FIG. 12, a plurality of openings 25 corresponding to the pattern to be vapor-deposited are provided at positions overlapping one through hole 16. . The opening 25 corresponds to the pattern to be vapor deposited, and the deposition material released from the evaporation source passes through the opening 25 to form a deposition pattern corresponding to the opening 25 on the deposition target. Ru. In the illustrated embodiment, an example in which the openings are arranged in a plurality of vertical and horizontal rows is described, but the openings may be arranged only in the vertical direction or in the horizontal direction.

  There is no particular limitation on the shape and size of the opening 25, and any shape and size corresponding to the pattern to be produced by vapor deposition may be used.

  The deposition mask 100 of the second embodiment may be used to form a deposition pattern corresponding to one screen, or may be used to simultaneously form deposition patterns corresponding to two or more screens. . "One screen" in the vapor deposition mask of the second embodiment means an assembly of the openings 25 corresponding to one product, and in the case where the one product is an organic EL display, one organic EL display A collection of organic layers necessary to form a thin film, that is, a collection of openings 25 to be the organic layer, is “one screen”. In this case, as shown in FIG. 15, it is preferable that the openings 25 be provided at predetermined intervals for each screen unit. In FIG. 15, the area closed by the broken line is taken as “one screen”. In FIG. 15, one screen is configured by twelve openings 25. However, the present invention is not limited to this embodiment. For example, when one opening 25 is one pixel, millions of pixels are used. The opening 25 can also constitute one screen. As an example of the pitch between screens, the pitch in the vertical direction and the pitch in the horizontal direction are about 1 mm to 100 mm. Note that the pitch between the screens means the pitch between adjacent openings in one screen and another screen adjacent to the one screen. Further, as shown in FIG. 15, the metal convex portion 40 may be appropriately disposed between the screens.

(Metal mask)
The metal mask 10 in the vapor deposition mask 100 of the second embodiment is made of metal and has one through hole 16. Further, in the present invention, when viewed from the front of the metal mask 10, the one through hole 16 overlaps with all the openings 25, in other words, all the openings 25 arranged in the resin mask 20. It is placed in the visible position.

  The metal portion constituting the metal mask 10, that is, the portion other than the through holes 16 may be provided along the outer edge of the vapor deposition mask 100 as shown in FIG. 11, and the size of the metal mask 10 as shown in FIG. The height of the resin mask 20 may be smaller than that of the resin mask 20 to expose the outer peripheral portion of the resin mask 20. FIG. 14 is a partially enlarged schematic cross-sectional view when the vapor deposition mask shown in FIG. 13 is viewed from the arrow X side. Alternatively, the size of the metal mask 10 may be larger than that of the resin mask 20, and a part of the metal portion may protrude outward in the lateral direction or in the longitudinal direction of the resin mask. In any case, the size of the through hole 16 is smaller than the size of the resin mask 20.

  There are no particular limitations on the width (W1) in the lateral direction and the width (W2) in the longitudinal direction of the metal portion forming the wall of the through hole of the metal mask 10 shown in FIG. 11, but the widths W1 and W2 become narrow. Over time, durability and handling tend to decrease. Therefore, it is preferable that W1 and W2 have a width that can sufficiently satisfy the durability and the handling property. Although an appropriate width can be appropriately set in accordance with the thickness of the metal mask 10, as an example of the preferable width, W1 and W2 are both about 1 mm to 100 mm as in the metal mask of the first embodiment.

(Method of Manufacturing Deposition Mask of First Embodiment)
Next, the manufacturing method of the vapor deposition mask of 1st Embodiment is demonstrated. In the method of manufacturing the vapor deposition mask 100 according to the first embodiment, as shown in FIG. 20A, a metal mask in which a plurality of slits 15 are provided in a resin plate 30 in which a plurality of metal convex portions 40 are provided on the surface. Preparing a metal mask with a resin plate laminated so that the metal convex portion 40 and the slit 15 overlap each other, and a resin plate through the slit 15 from the metal mask side as shown in FIG. And 30) forming a resin plate 30 with openings 25 necessary for forming a plurality of screens as shown in FIG. As the metal mask 10 constituting the plate-attached metal mask, a metal mask provided with a slit 15 overlapping with at least one of the plurality of screens is used. Hereinafter, the manufacturing method of the vapor deposition mask of 1st Embodiment is demonstrated concretely.

(Preparation process)
The metal mask 10 in which the plurality of slits 15 are provided on the resin plate 30 in which the plurality of metal protrusions 40 are provided on the surface shown in FIG. 20A overlaps the metal projections 40 and the slits 15. In preparing the metal plate with a resin plate laminated as described above, an example of a manufacturing method for obtaining the metal mask with a resin plate will be described.

(First manufacturing example of metal mask with resin plate)
As a method of manufacturing a metal plate with a resin plate as an example, first, a metal mask provided with a plurality of slits 15 is prepared. In the present invention, the metal mask 10 prepared here is a metal provided with the slit 15 overlapping the entire opening 25 provided in at least one entire screen as described in the vapor deposition mask 100 of the first embodiment. A mask 10 is used.

  Moreover, the resin board 30 by which the several metal convex part 40 was provided in the surface is prepared. There is no limitation in particular about the method of providing the some metal convex part 40 on the resin board 30, For example, the resin board 30 and the mask provided with the opening corresponding to the metal convex part 40 are bonded, and using the vapor deposition method The metal convex portion 40 can be formed on the resin plate 30. Then, the resin plate 30 provided with a plurality of metal protrusions 40 on the surface, and the metal mask 10 provided with a slit 15 overlapping the entire opening 25 provided in at least one entire screen are the metal protrusions By laminating so that the part 40 and the said slit 15 may overlap, the metal mask with a resin plate is obtained. It is also possible to provide the metal convex portion 40 on the resin plate 30 using a plating method instead of the vapor deposition method.

  In the above method, the resin plate 30 constituting the metal plate with resin plate includes not only a plate-like resin but also a resin layer and a resin film formed by coating as described above. That is, the resin plate may be prepared in advance, or may be formed by a conventionally known coating method or the like. Moreover, a resin board is the concept containing a resin film and a resin sheet. Further, the hardness of the resin plate is not limited either, and it may be a hard plate or a soft plate. Moreover, there is no limitation in particular about the bonding method with the metal mask for setting it as a metal mask with a resin plate, and the resin board 30 in which the several metal convex part 40 was provided in the surface, Several metal is mentioned on the metal mask 10 and the surface. It may bond together with the resin board 30 in which the convex part 40 was provided using various adhesive, and may use the resin board which has self-adhesiveness. In addition, the magnitude | size of the metal mask 10 and the resin board 30 in which the several metal convex part 40 was provided in the surface may be the same. If the resin plate 30 is smaller than the metal plate 10 and the outer peripheral portion of the metal mask 10 is exposed, the metal mask 10 and the frame are taken into consideration in consideration of fixing to the frame which is optionally performed later. Welding is easy, which is preferable.

  As a method of forming the metal mask 10 in which the slits 15 are provided, a masking member, for example, a resist material is applied to the surface of the metal plate, and predetermined spots are exposed and developed to finally form the slits 15. A resist pattern is formed leaving the positions to be formed. The resist material to be used as the masking member is preferably one having good processability and desired resolution. Then, the resist pattern is used as an etching resistant mask to perform etching by an etching method. After the etching is completed, the resist pattern is washed and removed. Thereby, the metal mask 10 in which the some slit 15 was provided is obtained. The etching for forming the slits 15 may be performed from one side or both sides of the metal plate. Moreover, when forming the slit 15 in a metal plate using the laminated body in which the resin plate was provided in the metal plate, a masking member is coated on the surface of the metal plate not in contact with the resin plate, The slits 15 are formed by etching from the side. When the resin plate has etching resistance to the etching material of the metal plate, it is not necessary to mask the surface of the resin plate, but when the resin plate does not have resistance to the etching material of the metal plate. It is necessary to apply a masking member on the surface of the resin plate. Also, in the above description, the description was made focusing on the resist material as the masking member, but instead of applying the resist material, a dry film resist may be laminated and the same patterning may be performed.

(Second production example of metal mask with resin plate)
The second method for obtaining a metal plate with a resin plate prepares a laminate in which a resin layer is formed by coating on a metal plate to be a metal mask in advance, and a masking member such as a resist material is formed on the surface of the metal plate. The resist pattern is formed by leaving the position where the slit 15 is to be finally formed and the position where the metal convex portion 40 is to be formed by applying a predetermined pattern and exposing and developing. Then, the resist pattern is used as an etching resistant mask to perform etching by an etching method. After the etching is completed, the resist pattern is washed and removed. In this method, a metal mask 10 provided with a plurality of slits 15 and a plurality of metal projections 40 are simultaneously formed on a resin plate 30 using a single metal plate. The thickness of the metal projection 40 formed here is substantially the same as the thickness of the metal mask 10, or the top of the metal projection 40 is eroded by etching at the time of formation, and the thickness of the metal projection 40 is greater than the thickness of the metal mask 10 It becomes thin.

  As shown in FIG. 21, instead of the second method of forming a resist pattern in which the position where the slit 15 is finally formed and the position where the metal convex portion 40 is formed are changed, the slit 15 is finally formed. While forming the resist pattern for slit formation in the position in which these are formed, a grid-like resist pattern is formed in the said resist pattern for slit formation. At the time of formation of the grid-like resist pattern, by forming the grid-like resist pattern in a thinned state, as shown in FIG. 21 (b), except for the intersection of the grid-like resist pattern by etching. The portion of is removed by side etching which is characteristic of etching processing, and after etching, only the intersection portion remains in the grid-like resist pattern. Then, by removing the resist pattern, the intersection portion remaining as the resist pattern becomes the metal convex portion 40. In this method, the metal mask 10 provided with the slits 15 and the plurality of metal projections 40 are simultaneously formed on the resin plate 30. Further, in this method, the top surface shape of the metal convex portion 40 is a substantially star shape. FIG. 21 is a front view seen from the metal plate side, showing a state in which a metal plate is laminated on a resin plate and a resist pattern is formed on the metal plate. FIG. 21A shows a resist pattern before etching, and FIG. 21B shows a resist pattern after etching.

(Step of fixing metal mask with resin plate to metal frame)
The step is an optional step in the method of manufacturing the vapor deposition mask according to the first embodiment, but the completed vapor deposition mask is not fixed to the frame but to the metal mask with resin plate fixed to the frame, Since the openings are provided later, the positional accuracy can be significantly improved. In addition, when fixing the completed vapor deposition mask 100 to a flame | frame, in order to fix while pulling the metal mask with which the opening was determined with respect to a flame | frame, compared with the case where this process is included, opening position coordinate precision is It will decrease.

  There is no limitation in particular about the method to fix the metal mask with a resin plate to a metal frame, For example, the conventionally well-known process methods, such as spot welding, may be adopted suitably.

  The metal frame used here is a substantially rectangular frame member, and has an opening for exposing the opening 25 provided in the resin mask of the deposition mask 100 to be finally fixed to the deposition source side. The material of the metal frame is not particularly limited, but a metal material having high rigidity, such as SUS or Invar material, is preferable.

  The thickness of the metal frame is not particularly limited, but is preferably about 10 mm to 30 mm in terms of rigidity and the like. The width between the inner peripheral end face of the opening of the metal frame and the outer peripheral end face of the metal frame is not particularly limited as long as the metal frame and the metal mask of the vapor deposition mask can be fixed. A width of about 50 mm can be illustrated.

  The width between the inner peripheral surface of the opening of the metal frame and the width between the outer peripheral end faces of the metal frame are not particularly limited, but the width between the inner peripheral surface lateral direction of the opening in the metal frame is a deposition mask, resin The width is smaller than the lateral width of the metal mask with plate. Similarly, the width in the longitudinal direction of the inner peripheral surface of the opening in the metal frame is smaller than the width in the vertical direction of the vapor deposition mask or the metal mask with a resin plate. There is no particular limitation on the width between the lateral end faces of the metal frame.

  In addition, a reinforcing frame or the like may be present at the opening of the metal frame within a range that does not prevent the exposure of the opening 25 of the resin mask 20. In other words, the opening may have a configuration divided by a reinforcing frame or the like.

(Step of irradiating laser from the metal mask side and forming an opening corresponding to the pattern to be vapor-deposited on the resin plate of the metal mask with resin plate)
Next, as shown in FIG. 20 (b), the laser is irradiated from the metal mask 10 side of the metal mask with resin plate through the slit 15 to form an opening 25 corresponding to the pattern to be vapor deposited on the resin plate 30. , And the resin mask 20. The laser device used here is not particularly limited, and a conventionally known laser device may be used. Thereby, the vapor deposition mask 100 of the first embodiment as shown in FIG. 20C is obtained.

  There is no limitation in particular about the irradiation position of a laser, According to the formation position of the metal convex part 40, it can set suitably. For example, the opening 25 may be formed by irradiating a laser so that the arrangement of the metal projections 40 is the preferable arrangement example described in the vapor deposition mask of the first embodiment. In addition, although the some metal convex part 40 is provided on the resin board of the metal mask with a resin board, some metal convex parts 40 may be removed by irradiation of a laser.

  In the method of manufacturing a vapor deposition mask according to the first embodiment of the present invention, the metal mask 10 in which the slits 15 are provided in advance at positions overlapping the entire one screen or two or more screens is used. In the two slits 15, an opening 25 necessary to form one screen or an opening 25 necessary to form two or more screens is formed. That is, one slit 15 is provided so as to overlap with the opening forming one whole screen or the opening 25 forming two or more whole screens.

  In addition, when the openings 25 are provided in the resin plate of the metal mask with resin plate fixed to the metal frame, a pattern to be manufactured by vapor deposition, that is, a reference plate provided in advance with a pattern corresponding to the opening 25 to be formed ) Is prepared, and the laser irradiation corresponding to the pattern of the reference plate is performed from the metal mask 10 side in a state where the reference plate is attached to the surface of the resin plate on which the metal mask 10 is not provided. Good. According to this method, it is possible to form the opening 25 in a so-called back-to-back state in which laser irradiation is performed while looking at the pattern of the reference plate bonded to the metal plate with resin plate. A high high definition opening 25 can be formed. Further, according to this method, since the openings 25 are formed in a state of being fixed to the frame, it is possible to obtain a deposition mask which is excellent not only in dimensional accuracy but also in positional accuracy.

  In addition, when using the said method, it is required that the pattern of a reference | standard board can be recognized with a laser irradiation apparatus etc. through the resin board 30 from the metal mask 10 side. As the resin plate, when it has a certain thickness, it is necessary to use one having transparency, but as described above, the preferable thickness considering the influence of shadow, for example, about 3 μm to 25 μm In the case of the thickness, even if it is a colored resin plate, the pattern of the reference plate can be recognized.

  There is no particular limitation on the method of bonding the metal mask with resin plate and the reference plate, and for example, when the metal mask 10 is a magnetic body, a magnet or the like is disposed behind the reference plate to form a metal with resin plate Bonding can be performed by attracting the resin plate 30 of the mask and the reference plate. Other than this, it is also possible to bond using an electrostatic adsorption method or the like. Examples of the reference plate include a TFT substrate having a predetermined opening pattern, a photomask, and the like.

  Also, the slimming process may be performed between the processes described above or after the process. For example, in the case of using a resin plate 30 to finally become the resin mask 20 or a metal mask 10 thicker than the above-described preferable thickness, the metal mask 10 or the resin plate 30 may be used during the manufacturing process. When transporting alone, excellent durability and transportability can be imparted. On the other hand, in order to prevent the occurrence of shadow and the like, the thickness of the vapor deposition mask 100 obtained by the manufacturing method of the present invention is preferably an optimum thickness. The slimming process is a process useful for optimizing the thickness of the vapor deposition mask 100 while satisfying durability and transportability between manufacturing processes or after the process.

  The slimming of the metal mask 10 is performed during or after the process described above, the surface of the metal mask 10 not in contact with the resin plate 30 or the surface of the metal mask 10 not in contact with the resin plate 30 or the resin mask 20. Can be realized by etching the metal mask 10 using an etching material capable of etching.

  The same applies to slimming of the resin plate 30 to be the resin mask 20 and the resin mask 20, that is, optimization of the thickness of the resin plate 30 and the resin mask 20, and between or after any of the steps described above. The surface of the resin plate 30 not in contact with the metal mask 10 or the surface of the resin mask 20 not in contact with the metal mask 10 is etched using an etching material capable of etching the material of the resin plate 30 or the resin mask 20 Can be realized. Moreover, after forming the vapor deposition mask 100, the thickness of both the metal mask 10 and the resin mask 20 can be optimized by etching.

(Method of Manufacturing Vapor Deposition Mask of Second Embodiment)
Next, the manufacturing method of the vapor deposition mask of 2nd Embodiment is demonstrated. In the method of manufacturing the vapor deposition mask 100 according to the second embodiment, as shown in FIG. 22 (a), a metal mask in which one through hole is provided in a resin plate 30 provided with a plurality of metal convex portions 40 on the surface. 10, a preparation step of preparing a metal plate with a resin plate laminated so that the metal convex portion 40 and the one through hole 16 overlap, and as shown in FIG. Forming a plurality of openings 25 at positions overlapping the one through hole 16 of the resin plate 30 by irradiating the laser through the two through holes 16.

  The manufacturing method of the second embodiment is the same as the manufacturing method of the first embodiment except that the metal mask used in the manufacturing method of the first embodiment is different, and the description herein is other than the difference. Is omitted.

  As the metal mask 10 in which one through hole 16 is provided, the metal mask described in the vapor deposition mask of the second embodiment can be used as it is. As the method of manufacturing the metal mask, the method described in the manufacturing method of the first embodiment can be used as it is.

(Method of manufacturing organic semiconductor device)
Next, the manufacturing method of the organic-semiconductor element of this invention is demonstrated. The method for producing an organic semiconductor device of the present invention comprises the step of forming a deposition pattern by a deposition method using a metal frame deposition mask, and the following metal frame deposition mask is used in the step of forming the organic semiconductor device. Is characterized in that

  The method of manufacturing an organic semiconductor device according to one embodiment includes the step of forming an electrode on a substrate, the step of forming an organic layer, and the step of forming an opposing electrode. It has a process, a sealing layer formation process, etc. and a vapor deposition pattern is formed on a substrate by the vapor deposition method using the vapor deposition mask with a metal frame in each arbitrary process. For example, when an evaporation method using an evaporation mask with a metal frame is applied to the light emitting layer formation step of each color of R, G, B of the organic EL device, the evaporation pattern of the light emitting layer of each color is formed on the substrate . In addition, the manufacturing method of the organic-semiconductor element of this invention is not limited to these processes, It is applicable to the arbitrary processes of the conventionally well-known organic-semiconductor element using the vapor deposition method.

  In the vapor deposition mask with metal frame according to one embodiment used in the method for manufacturing an organic semiconductor device, a metal mask provided with a plurality of slits and a resin mask are stacked, and a resin mask is used to form a plurality of screens. And the openings correspond to the pattern to be formed by vapor deposition, and each slit is provided at a position overlapping at least one entire screen, and the surface on the side overlapping the slits of the resin mask It is characterized by being a vapor deposition mask provided with a metal convex part.

  Moreover, the metal frame attached vapor deposition mask according to the other embodiment used in the method for manufacturing an organic semiconductor device has a metal mask provided with one through hole and a plurality of openings corresponding to a pattern to be vapor deposited and manufactured. A resin mask is laminated, and all the plurality of openings are provided at positions overlapping with one through hole, and a metal convex portion is provided on the surface on the side overlapping with one through hole of the resin mask It is characterized in that it is a deposition mask.

  As the deposition mask constituting the deposition mask with metal frame, the deposition mask 100 manufactured by the manufacturing method of the present invention described above can be used as it is, and the detailed description thereof is omitted here. According to the vapor deposition mask of the present invention described above, an organic semiconductor device having a high definition pattern can be formed. As an organic-semiconductor element manufactured by the manufacturing method of this invention, the organic layer of an organic EL element, a light emitting layer, a cathode electrode etc. can be mentioned, for example. In particular, the method for producing an organic semiconductor device of the present invention can be suitably used for producing the R, G and B light emitting layers of an organic EL device which requires high pattern precision.

100 ... vapor deposition mask 10 ... metal mask 15 ... slit 16 ... through hole 20 ... resin mask 25 ... opening 28 ... groove 40 ... metal convex

Claims (36)

  1. A deposition mask,
    The vapor deposition mask is formed by laminating a resin mask and a metal mask,
    The resin mask has a plurality of openings necessary to form a deposition pattern,
    The metal mask has one through hole overlapping all of the plurality of openings necessary to form a deposition pattern,
    A on the resin mask corresponding to a position overlapping the one through hole at a position not in contact with the metal mask, a plurality of metallic protrusions which each independently is provided,
    Evaporation mask.
  2. The resin mask is quadrilateral,
    When viewed in plan the deposition mask from the metal mask side, one of the convex portions even without least is parallel to any one side of the deposition mask, and for all of the straight line passing through said plurality of openings It is provided in the position which does not overlap one,
    The vapor deposition mask according to claim 1.
  3. The resin mask is quadrilateral,
    When viewed in plan the deposition mask from the metal mask side, one of the convex portions even without low, for each of the sides of the deposition mask, parallel to the said edge, and through the plurality of openings Provided in a position where one of all straight lines does not overlap,
    The vapor deposition mask according to claim 1.
  4. The resin mask is quadrilateral,
    When the vapor deposition mask is viewed in a plan view from the metal mask side , for each side of the vapor deposition mask, a portion which is parallel to the side and does not overlap any one of all straight lines passing through the plurality of openings the number of the metal convex portion is located is less than the number of the metal convex portion is positioned other locations,
    The vapor deposition mask according to claim 3 .
  5. The height of the metal convex portion is lower than the height of the metal mask,
    The vapor deposition mask according to any one of claims 1 to 4.
  6. The height of the metal convex portion is equal to the height of the metal mask,
    The vapor deposition mask according to any one of claims 1 to 4.
  7. The height of the metal convex portion is in the range of 0.1 μm to 40 μm.
    The vapor deposition mask according to any one of claims 1 to 6.
  8. The height of the metal convex portion is in the range of 0.5 μm to 30 μm.
    The vapor deposition mask according to any one of claims 1 to 6.
  9. When the vapor deposition mask is viewed in plan from the metal mask side, at least one of the plurality of metal projections has a dimension shorter than a pitch between the adjacent openings.
    The vapor deposition mask according to any one of claims 1 to 8.
  10. A portion of the surface of at least one of the plurality of metal protrusions is buried in the resin mask,
    The vapor deposition mask according to any one of claims 1 to 9.
  11. When the vapor deposition mask is viewed in a plan view from the metal mask side, four openings are located at equal distances from the center of the metal protrusion around at least one of the plurality of metal protrusions.
    The vapor deposition mask according to any one of claims 1 to 10.
  12. The plurality of openings corresponding to the pattern to be formed by vapor deposition are a collection of openings for forming a screen exceeding 400 ppi.
    The vapor deposition mask according to any one of claims 1 to 11.
  13. The metal convex portion is provided between any one of the openings.
    The vapor deposition mask according to any one of claims 1 to 12.
  14. The plurality of openings necessary for forming the vapor deposition pattern, which the vapor deposition mask has, are
    It is an opening necessary to simultaneously form vapor deposition patterns of two or more screens,
    The vapor deposition mask according to any one of claims 1 to 13.
  15. Among the distances between the openings required to form a deposition pattern for one screen and the openings required to form a deposition pattern for another screen, the one with the shortest distance The distance between the screens is longer than the distance between the adjacent openings at the openings required to form a deposition pattern for one screen,
    The vapor deposition mask according to claim 14.
  16. The distance between the screens is in the range of 1 mm to 100 mm.
    The vapor deposition mask according to claim 15.
  17. The plurality of openings necessary for forming the vapor deposition pattern, which the vapor deposition mask has, are
    It is an opening necessary to form a deposition pattern for one screen,
    The vapor deposition mask according to any one of claims 1 to 13.
  18. The thickness of the resin mask is in the range of 4 μm to 8 μm,
    The vapor deposition mask according to any one of claims 1 to 17.
  19. The size of the opening is in the range of 500 μm 2 or more and 1000 μm 2 or less.
    The vapor deposition mask according to any one of claims 1 to 18.
  20. The resin mask has a groove,
    The vapor deposition mask according to any one of claims 1 to 19.
  21. The groove is located between any of the openings,
    21. The vapor deposition mask according to claim 20.
  22. The plurality of openings are arranged side by side in both the longitudinal direction and the lateral direction.
    The vapor deposition mask according to any one of claims 1 to 21.
  23. The plurality of openings are arranged side by side only in one of the longitudinal direction and the lateral direction.
    The vapor deposition mask according to any one of claims 1 to 21.
  24. The plurality of openings are arranged in a plurality of columns in the longitudinal direction, and the openings of adjacent columns are arranged mutually offset in the longitudinal direction, or a plurality of rows arranged in the lateral direction are adjacent rows The openings are mutually offset laterally,
    The vapor deposition mask according to any one of claims 1 to 21.
  25. A vapor deposition mask according to any one of claims 1 to 24 is fixed to a frame,
    Framed deposition mask.
  26. A method of manufacturing a deposition mask for manufacturing a deposition mask according to any one of claims 1 to 24,
    A plurality of openings necessary for forming the deposition pattern are formed by irradiating a laser from the metal mask side.
    Method of manufacturing a deposition mask.
  27. A method of manufacturing a deposition mask,
    Preparing a metal mask with a resin plate in which a resin plate and a metal mask are laminated;
    Forming a plurality of openings necessary for forming the vapor deposition pattern in the resin plate of the metal mask with resin plate;
    The metal mask has one through hole overlapping all the plurality of openings necessary to form a vapor deposition pattern formed on the resin plate,
    Said resin plate, wherein Ri one through hole and Do weight, in a position not in contact with the metal mask has a plurality of metallic protrusions which independently
    Method of manufacturing a deposition mask.
  28. Forming the plurality of metal convexes by vapor deposition;
    The manufacturing method of the vapor deposition mask of Claim 27.
  29. Forming the plurality of metal projections by plating;
    The manufacturing method of the vapor deposition mask of Claim 27.
  30. The metal mask is formed by etching a metal plate,
    The manufacturing method of the vapor deposition mask in any one of Claims 27-29.
  31. The metal mask with the resin plate,
    Prepare a laminate of resin plate and metal plate,
    Etching the metal plate of the laminated body to form the plurality of metal projections and the one through hole from the metal plate;
    The manufacturing method of the vapor deposition mask of Claim 27.
  32. Coating a resin layer on a metal plate to obtain a laminate of the resin plate and the metal plate;
    The manufacturing method of the vapor deposition mask of Claim 31.
  33. Bonding a resin plate and a metal plate to obtain a laminate of the resin plate and the metal plate
    The manufacturing method of the vapor deposition mask of Claim 31.
  34. A deposition mask preparation used for manufacturing the deposition mask according to any one of claims 1 to 24,
    A resin plate and a metal mask are laminated,
    The metal mask has the one through hole overlapping all of the plurality of openings necessary to form the vapor deposition pattern formed on the resin plate;
    A on the resin plate corresponding to a position overlapping the one through hole at a position not in contact with the metal mask, a plurality of metal protrusions for independent is provided,
    Vapor deposition mask preparation.
  35. It is a formation method of the pattern produced by vapor deposition,
    A deposition mask according to any one of claims 1 to 24 or a framed deposition mask according to claim 25 is used.
    How to form a pattern.
  36. A method of manufacturing an organic semiconductor device, comprising
    A deposition mask according to any one of claims 1 to 24 or a framed deposition mask according to claim 25 is used.
    Method of manufacturing an organic semiconductor device.
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