JP6588125B2 - Vapor deposition mask manufacturing method, vapor deposition mask, and organic semiconductor element manufacturing method - Google Patents

Description

  The present invention relates to a method for manufacturing a vapor deposition mask, and more particularly to a method for manufacturing a vapor deposition mask having a structure in which a resin layer and a metal layer are laminated. Moreover, this invention relates also to the manufacturing method of the organic-semiconductor element using a vapor deposition mask and a vapor deposition mask.

  In recent years, organic EL (Electro Luminescence) display devices have attracted attention as next-generation displays. In organic EL display devices that are currently mass-produced, the formation of the organic EL layer is mainly performed using a vacuum deposition method.

  As a vapor deposition mask, a metal mask (metal mask) is generally used. However, as the definition of organic EL display devices increases, it is becoming difficult to accurately form a vapor deposition pattern using a metal mask. This is because with the current metal processing technology, it is difficult to accurately form a small opening corresponding to a short pixel pitch (for example, about 10 to 20 μm) on a metal plate (for example, about 100 μm in thickness) serving as a metal mask. .

  Therefore, a vapor deposition mask having a structure in which a resin layer and a metal layer are laminated (hereinafter also referred to as “laminated mask”) has been proposed as a vapor deposition mask for forming a vapor deposition pattern with high definition.

  For example, Patent Document 1 discloses a laminated mask in which a resin film and a holding member that is a metal magnetic material are laminated. A plurality of openings corresponding to a desired vapor deposition pattern are formed in the resin film. A slit having a size larger than the opening of the resin film is formed in the holding member. The opening part of the resin film is arrange | positioned in the slit. Therefore, when using the laminated mask of patent document 1, a vapor deposition pattern is formed corresponding to the several opening part of a resin film. Even a small opening can be formed with high accuracy on a resin film thinner than a metal plate for a general metal mask.

  When forming a small opening as described above in a resin film, a laser ablation method is preferably used. Patent Document 1 describes a method of irradiating a resin film placed on a support material (such as a glass substrate) with a laser to form an opening having a desired size.

  28A to 28D are schematic process cross-sectional views for explaining a conventional method for manufacturing a vapor deposition mask disclosed in Patent Document 1, respectively.

  In Patent Document 1, first, as shown in FIG. 28A, a metal layer 82 having an opening (slit) 85 is formed on a resin film 81 to obtain a laminated film 80. Next, as illustrated in FIG. 28B, the laminated film 80 is attached to the frame 87 in a state where tension is applied to the laminated film 80 in a predetermined in-plane direction. Thereafter, the laminated film 80 is placed on the glass substrate 90 as shown in FIG. At this time, the surface of the resin film 81 opposite to the metal layer 82 is brought into close contact with the glass substrate 90 via a liquid 88 such as ethanol. Thereafter, as shown in FIG. 28 (d), a plurality of openings 89 are formed in the resin film 81 by irradiating a portion of the resin film 81 exposed by the slit 85 of the metal layer 82 with the laser light L. To do. In this way, the stacked vapor deposition mask 900 is manufactured.

JP 2014-205870 A

  However, the conventional manufacturing method illustrated in FIG. 28 has a problem that it is difficult to process the resin film with high accuracy, or burrs are generated at the periphery of the opening of the resin film.

  When burrs are generated in the resin film, it becomes difficult to bring the completed deposition mask into close contact with a substrate to be deposited (hereinafter also referred to as “deposition target substrate”), and a gap may be formed between the deposition mask and the deposition target substrate. For this reason, when a conventional vapor deposition mask is used, there is a possibility that a high-definition vapor deposition pattern corresponding to the opening of the vapor deposition mask cannot be obtained. Details will be described later.

  Although attempts have been made to remove burrs by wiping or the like after processing the resin film, no method has been proposed that can suppress the occurrence of burrs.

  This invention is made | formed in view of the said situation, The objective is to provide the lamination type vapor deposition mask which can be used suitably for formation of a high-definition vapor deposition pattern, and its manufacturing method. Moreover, the other object of this invention is to provide the manufacturing method of the organic-semiconductor element using such a vapor deposition mask.

  The manufacturing method of the vapor deposition mask of one Embodiment by this invention is a manufacturing method of the vapor deposition mask provided with the resin layer and the magnetic metal body formed on the said resin layer, Comprising: (A) At least 1 1st 1st Preparing a magnetic metal body having an opening, (B) preparing a substrate, (C) applying a solution containing a resin material or a varnish of the resin material to the surface of the substrate, and then performing a heat treatment. And (D) fixing the resin layer formed on the substrate on the magnetic metal body so as to cover the at least one first opening, and (E) A step of forming a plurality of second openings in the resin layer; and (F) a step of peeling the substrate from the resin layer after the step (E).

  In one embodiment, the step (E) is performed after the step (D), and the plurality of second openings are in the at least one first opening of the magnetic metal body in the resin layer. Formed in the region located at

  In one embodiment, the step (E) is performed between the step (C) and the step (D).

  In a certain embodiment, the said method further includes the process of providing a flame | frame in the peripheral part of the said magnetic metal body.

  In a certain embodiment, in the said process (C), the said heat processing is performed on the conditions which produce | generate the tensile stress larger than 0.2 MPa at room temperature in the layer surface direction in the said resin layer.

  In one embodiment, the width of the at least one first opening is 30 mm or more, and the resin layer when the magnetic metal body is held in a horizontal direction after peeling the substrate in the step (F). In the step (C), the maximum deflection amount δ is 5 μm or less in the step (C), where δ is the maximum deflection amount of the region of the magnetic metal body located in the at least one first opening. It is performed under the condition that a large tensile stress is generated in the resin layer.

  In one embodiment, the minimum width of the at least one first opening is W, and the magnetic metal body is held in the horizontal direction after peeling the substrate in the step (F). In the step (C), when the maximum deflection amount of the region located in the at least one first opening of the magnetic metal body is δ, the heat treatment is such that δ / W is 0.01% or less. It is performed under the condition that tensile stress is applied to the resin layer.

  In a certain embodiment, after peeling the said board | substrate in the said process (F), the said magnetic metal body is provided with a compressive stress from the said resin layer.

  In one embodiment, the resin layer is a polyimide layer, the substrate is a glass substrate, and the heat treatment in the step (C) is performed by applying the solution containing the resin material or the varnish of the resin material. Is heated to a temperature of 300 ° C. or higher and 600 ° C. or lower at a rate of 30 ° C./min or higher.

  In one embodiment, the step (D) includes a step (D1) of forming an adhesive layer on a part of the resin layer, and a step of bonding the resin layer to the magnetic metal body via the adhesive layer ( D2).

  In one embodiment, the adhesive layer is a metal layer, and in the step (D2), the resin layer is formed on the magnetic metal body via the metal layer by welding the metal layer to the magnetic metal body. It is the process of joining.

  In one embodiment, the width of the at least one first opening is 30 mm or more, and a magnetic metal is present in a region of the resin layer located in the at least one first opening of the magnetic metal body. Not.

  In one embodiment, the magnetic metal body has an open mask structure.

  An evaporation mask according to an embodiment of the present invention includes a frame, a magnetic metal body including at least one first opening supported by the frame, and the at least one first metal disposed on the magnetic metal body. A resin layer that covers one opening, and an adhesive layer that is positioned between the resin layer and the magnetic metal body and that joins the resin layer and the magnetic metal body, the resin layer having an in-plane direction The magnetic metal body receives a compressive stress in the in-plane direction from the resin layer.

  In one embodiment, the tensile stress at room temperature of the resin layer is greater than 0.2 MPa.

  In one embodiment, the adhesive layer is a metal layer fixed to the resin layer, and the metal layer is welded to the magnetic metal body.

  In one embodiment, the width of the at least one first opening is 30 mm or more, and the at least one first of the magnetic metal bodies in the resin layer when the magnetic metal bodies are held in a horizontal direction. The maximum deflection amount δ of the region located in the opening is 5 μm or less.

  In one embodiment, when the width of the at least one first opening is W and the magnetic metal body is held in the horizontal direction, the at least one first opening of the magnetic metal body in the resin layer is included in the resin layer. Assuming that the maximum deflection amount of the located region is δ, δ / W is 0.01% or less.

  In one embodiment, the width of the at least one first opening is 30 mm or more, and a magnetic metal is present in a region of the resin layer located in the at least one first opening of the magnetic metal body. Not.

  In one embodiment, the magnetic metal body has an open mask structure.

  The manufacturing method of the organic-semiconductor element of one Embodiment by this invention includes the process of vapor-depositing organic-semiconductor material on a workpiece | work using the vapor deposition mask in any one of said.

  According to the embodiments of the present invention, a stacked vapor deposition mask that can be suitably used for forming a high-definition vapor deposition pattern and a method for manufacturing the same are provided.

(A) is a top view which shows typically the vapor deposition mask 100 of embodiment by this invention, (b) is sectional drawing along the AA line in Fig.1 (a). (A) And (b) is a top view which shows typically the other vapor deposition mask of embodiment by this invention, respectively. (A) And (b) is the process top view and process sectional drawing which illustrate the manufacturing method of the vapor deposition mask of embodiment by this invention, respectively. (A) And (b) is the process top view and process sectional drawing which illustrate the manufacturing method of the vapor deposition mask of embodiment by this invention, respectively. (A) And (b) is the process top view and process sectional drawing which illustrate the manufacturing method of the vapor deposition mask of embodiment by this invention, respectively. (A) And (b) is the process top view and process sectional drawing which illustrate the manufacturing method of the vapor deposition mask of embodiment by this invention, respectively. (A) And (b) is the process top view and process sectional drawing which illustrate the manufacturing method of the vapor deposition mask of embodiment by this invention, respectively. (A) And (b) is a figure which shows typically the relationship between the stress by the film | membrane formed on the board | substrate, and the deformation | transformation method of a board | substrate. (A)-(e) is process sectional drawing which illustrates the other manufacturing method of the vapor deposition mask of embodiment by this invention, respectively. (A)-(e) is process sectional drawing which illustrates the other manufacturing method of the vapor deposition mask of embodiment by this invention, respectively. (A)-(e) is process sectional drawing which illustrates further another manufacturing method of the vapor deposition mask of embodiment by this invention, respectively. It is a top view of samples A to C. (A) And (b) is the top view and sectional drawing which show the vapor deposition mask of Example 1. FIG. (A) And (b) is a top view which shows the scanning direction in a deflection | deviation measurement, respectively. (A)-(c) is a figure which shows the change of the height of the polyimide film of the cell C1 in the vapor deposition mask of Example 1, respectively. (A)-(c) is a figure which shows the change of the height of the polyimide film of the cell C1 in the vapor deposition mask of Example 1, respectively. (A)-(c) is a figure which shows the change of the height of the polyimide film of the cell C2 in the vapor deposition mask of Example 1, respectively. (A)-(c) is a figure which shows the change of the height of the polyimide film of the cell C2 in the vapor deposition mask of Example 1, respectively. (A)-(c) is a figure which shows the change of the height of the polyimide film of the cell C3 in the vapor deposition mask of Example 1, respectively. (A)-(c) is a figure which shows the change of the height of the polyimide film of the cell C3 in the vapor deposition mask of Example 1, respectively. (A)-(c) is a figure which shows the change of the height of the polyimide film of the cell in the vapor deposition mask of Example 2, respectively. (A)-(c) is a figure which shows the change of the height of the polyimide film of the cell in the vapor deposition mask of Example 1, respectively. (A) And (b) is a figure which shows the vapor deposition mask of Example 1, 2, respectively. 1 is a cross-sectional view schematically showing a top emission type organic EL display device 500. FIG. (A)-(d) is process sectional drawing which shows the manufacturing process of the organic electroluminescent display apparatus 500. FIG. (A)-(d) is process sectional drawing which shows the manufacturing process of the organic electroluminescent display apparatus 500. FIG. (A)-(d) is typical sectional drawing for demonstrating a mode that a burr | flash is produced | generated by the resin film by a laser ablation method. (A)-(d) is typical process sectional drawing for demonstrating the manufacturing method of the conventional vapor deposition mask disclosed by patent document 1, respectively.

  As described above, according to the conventional method of manufacturing a laminated deposition mask, burrs may be generated at the periphery of the opening of the resin film. The present inventor has repeatedly studied the factors that generate burrs and has obtained the following knowledge.

  In the conventional method, as described with reference to FIGS. 28C and 28D, the resin film 81 is brought into close contact with the glass substrate 90 by the surface tension of the liquid 88 such as ethanol. A predetermined region (hereinafter abbreviated as “laser irradiation region”) is irradiated with laser light L to form an opening 89. As a result of studies by the present inventors, in this method, when the resin film 81 is brought into close contact with the glass substrate 90, bubbles are partially generated at the interface between the glass substrate 90 and the resin film 81, and locally low adhesion is achieved. It turns out that there is a risk of becoming. Further, the present inventor not only makes it difficult to form the opening 89 with high accuracy when bubbles are present under the laser irradiation region where the resin film 81 is present, but also makes it difficult to form a variable in the laser irradiation region. Has been found to be easily generated. This will be described in detail with reference to FIG.

  FIGS. 27A to 27D are schematic cross-sectional views for explaining how burrs are generated by bubbles between the glass substrate 90 and the resin film 81. In FIG. 27, the metal layer and the liquid are not shown.

  As shown in FIG. 27A, when the resin film 81 is brought into close contact (for example, via a liquid) on a support material such as the glass substrate 90, a gap is partially formed between the glass substrate 90 and the resin film 81. (Bubbles) 94 may be generated. In this state, when the resin film 81 is processed by the laser ablation method (hereinafter sometimes simply referred to as “laser processing”), as shown in FIG. There is a possibility that a laser irradiation region 92 for forming an opening is arranged in a portion located in the position. For example, a plurality of shots are performed on the laser irradiation region 92 while focusing on the surface of the resin film 81.

  Laser ablation is a phenomenon in which a constituent material on a solid surface is abruptly released by the energy of laser light when the surface of the solid is irradiated with laser light. Here, the released speed is called ablation speed. At the time of laser processing, there is a possibility that the ablation speed is distributed in the laser irradiation region 92 depending on the energy distribution, and a through-hole is first formed only in a part of the resin film 81. Then, as shown in FIG. 27 (c), the other thinned portion 98 of the resin film 81 is inside the bubble 94 located between the back side of the resin film 81 (that is, between the resin film 81 and the glass substrate 90). ) And is no longer irradiated with the laser beam L. As a result, the opening 89 is formed in a state where the thinned portion 98 is left without being removed. In this specification, the portion 98 of the resin film 81 left in a thinned state is referred to as “burr”.

  If the burr 98 protrudes from the back side of the resin film 81, when the vapor deposition mask is placed on the vapor deposition target substrate, a part of the vapor deposition mask may float from the vapor deposition target substrate. For this reason, the vapor deposition pattern of the shape corresponding to the opening part 89 may not be obtained.

  In addition, the process (burr removal process) which removes the burr | flash 98 of the resin film 81 may be performed after laser processing. For example, an attempt has been made to wipe off the back surface of the resin film 81 (wiping). However, it is difficult to remove all burrs 98 generated in the resin film 81 by the deburring process. In addition, as illustrated in FIG. 27D, wiping may return a part of the burrs 98 so as to protrude into the opening 89, which may cause shadowing in the vapor deposition process.

  Based on the above findings, the present inventor has found a novel method capable of forming an opening of a desired size with high accuracy while suppressing the occurrence of burrs in the resin layer supported by the support material. I came up with it.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, this invention is not limited to the following embodiment.

(Embodiment)
<Structure of vapor deposition mask>
An evaporation mask 100 according to an embodiment of the present invention will be described with reference to FIGS. 1 (a) and 1 (b). FIGS. 1A and 1B are a plan view and a cross-sectional view schematically showing the vapor deposition mask 100, respectively. FIG.1 (b) has shown the cross section along the AA line in Fig.1 (a). FIG. 1 schematically shows an example of the vapor deposition mask 100, and it goes without saying that the size, number, arrangement relationship, length ratio, and the like of each component are not limited to the illustrated example. The same applies to other drawings described later.

  As illustrated in FIGS. 1A and 1B, the vapor deposition mask 100 includes a magnetic metal body 20 and a resin layer 10 disposed on the main surface 20 s of the magnetic metal body 20. You may further provide the contact bonding layer 50 located in at least one part between the resin layer 10 and the magnetic metal body 20. FIG. The adhesive layer 50 is a layer that joins the resin layer 10 and the magnetic metal body 20 together.

  The vapor deposition mask 100 is a laminated mask having a structure in which a resin layer 10 and a magnetic metal body 20 are laminated. Hereinafter, the laminated body 30 including the resin layer 10 and the magnetic metal body 20 may be referred to as a “mask body”.

  A frame 40 may be provided on the peripheral edge of the mask body 30. The frame 40 may be joined to a surface of the magnetic metal body 20 opposite to the main surface 20s.

  The magnetic metal body 20 has at least one opening (hereinafter referred to as “first opening”) 25. In this example, the magnetic metal body 20 has six first openings 25. A portion (including a portion positioned between adjacent first openings 25) 21 in the vicinity of the first opening 25 in the magnetic metal body 20 where the metal exists is referred to as a “solid portion”. .

  The magnetic metal body 20 may have an open mask structure. The “open mask structure” is an evaporation mask for forming a plurality of devices (for example, an organic EL display) on one evaporation target substrate, and one opening portion is provided for a unit region U corresponding to one device. The structure which has. The magnetic metal body 20 may not have an open mask structure. For example, the magnetic metal body 20 may have a structure in which two or more openings (for example, slits) are arranged for one unit region U. Good. Hereinafter, a magnetic metal body having an open mask structure may be simply referred to as an “open mask”.

  As will be described later, when the vapor deposition process is performed using the vapor deposition mask 100, the vapor deposition mask 100 is disposed such that the magnetic metal body 20 is positioned on the vapor deposition source side and the resin layer 10 is positioned on the workpiece (vapor deposition target) side. . Since the magnetic metal body 20 is a magnetic body, the vapor deposition mask 100 can be easily held and fixed on the workpiece in the vapor deposition process by using a magnetic chuck.

  The resin layer 10 is disposed on the main surface 20 s of the magnetic metal body 20 so as to cover the first opening 25. A region 10 a located in the first opening 25 in the resin layer 10 is a “first region”, a region 10 b overlapping with the solid portion 21 of the magnetic metal body 20 when viewed from the normal direction of the vapor deposition mask 100. Is referred to as a “second region”.

  A plurality of openings (hereinafter referred to as “second openings”) 13 are formed in the first region 10 a of the resin layer 10. The plurality of second openings 13 are formed in a size, shape, and position corresponding to the vapor deposition pattern to be formed on the workpiece. In this example, in each unit region U, a plurality of second openings 13 are arranged at a predetermined pitch. The interval between two adjacent unit regions U is typically larger than the interval between two adjacent second openings 13 in the unit region U. In this example, no magnetic metal is present on the first region 10a.

  The second region 10 b of the resin layer 10 is bonded to the periphery (solid portion 21) of the first opening 25 of the magnetic metal body 20 through the adhesive layer 50. The adhesive layer 50 is not particularly limited, but may be a metal layer. For example, by forming a metal layer on the second region 10b of the resin layer 10 by plating or the like and welding the metal layer and the solid portion 21 of the magnetic metal body 20, the resin layer 10 and the magnetic metal body 20 are It may be joined. Alternatively, the adhesive layer 50 may be formed of an adhesive. In addition, the resin layer 10 should just be joined to the magnetic metal body 20 by the method illustrated above, and does not need to be joined directly to the frame 40.

  As will be described later, the resin layer 10 provides a solution containing a resin material (eg, a soluble polyimide solution) or a solution containing a precursor of a resin material (eg, a polyimide varnish) on a support substrate such as a glass substrate, It is a layer formed by performing heat treatment. The heat treatment herein includes a heat treatment for performing a drying step (for example, 100 ° C. or higher) when a soluble polyimide solution is used, and a drying and firing step (for example, 300 ° C. or higher) when using a polyimide varnish.

  In the present embodiment, the plurality of second openings 13 are formed by performing laser processing on the resin layer 10 on the support substrate. Since the support substrate and the resin layer 10 are in close contact with each other and no bubbles are present (or almost no) between them, the generation of burrs is suppressed in the laser processing step of the resin layer 10. Therefore, the resin layer 10 of this embodiment has almost no burrs. Or even if it has a burr | flash, the number (number per unit area) is reduced significantly conventionally. The support substrate is peeled off from the resin layer 10 after the second opening 13 is formed in the resin layer.

  The resin layer 10 formed on the support substrate by the above method may have a tensile stress (tensile internal stress) in the layer plane direction. Thereby, after peeling a support substrate, since the deflection | deviation which arises in the 1st area | region 10a of the resin layer 10 can be reduced, it becomes possible to form a high-definition vapor deposition pattern on a workpiece | work. The tensile stress of the resin layer 10 can be controlled by, for example, heat treatment conditions when the resin layer 10 is formed on the support substrate. The tensile stress of the resin layer 10 is larger than 0.2 MPa, for example, at room temperature. Preferably it is 3 MPa or more. Thereby, the deflection can be reduced more effectively.

  Generally, when a resin film is formed on a support substrate by heat treatment, the heat treatment is performed under conditions that can reduce residual stress generated in the resin film as much as possible. This is because when the residual stress (tensile stress) of the resin film is increased, problems such as warping of the support substrate occur, which causes a decrease in shape stability and reliability. In contrast, in the present embodiment, a predetermined tensile stress is intentionally generated in the resin layer 10, and the deflection of the resin layer 10 is reduced using the tensile stress. Thereby, the process of stretching the resin layer 10 becomes unnecessary, and a vapor deposition mask with reduced deflection can be manufactured by an easier process.

  Although the resin layer 10 may have a stress distribution on the support substrate, when the support substrate is peeled off, the magnitude of the tensile stress of the resin layer 10 is averaged and can be substantially uniform in the plane. Accordingly, the first region 10a of the resin layer 10 can have a tensile stress having substantially the same magnitude.

  According to the present embodiment, since the resin layer 10 has a predetermined tensile stress, the deflection generated in the resin layer 10 is reduced without arranging a metal film in the vicinity of the second opening 13 of the resin layer 10. . Therefore, a precise patterning process for the metal film is not necessary. In addition, the size of the first opening 25 of the magnetic metal body 20 can be increased while suppressing the occurrence of deflection, and for example, the magnetic metal body 20 having an open mask structure can be used. This will be described in detail below.

  In a conventional vapor deposition mask, a laminated film (or resin film) of a resin film and a metal film (magnetic metal film) is fixed to a frame in a state where the film is pulled in a specific layer in-plane direction by a stretcher or the like (hereinafter referred to as a layer) , Called “stretching process”). In such a laminated mask, if the opening of the metal film is too large, the resin film may bend due to its own weight, and a vapor deposition pattern having a shape corresponding to the opening of the resin film may not be obtained. For this reason, conventionally, in order to arrange the metal film as a holding member as close as possible to the opening of the resin film, a precise metal pattern is formed on the resin film as proposed in Patent Document 1. There was a need. On the other hand, according to this embodiment, a desired tensile stress can be generated in the resin layer 10 depending on the process conditions when the resin layer 10 is formed on the support substrate. Moreover, since the tensile stress is generated in the resin layer 10 separately from the magnetic metal body 20, the magnitude of the tensile stress generated in the resin layer 10 can be controlled more easily. Therefore, it is not necessary to form a magnetic metal film having a precise pattern on the resin film, and a metal plate in which the first opening is formed in advance such as an open mask can be used. For this reason, a manufacturing process and manufacturing cost can be reduced significantly compared with the past.

  This embodiment is particularly advantageous when a magnetic metal body 20 having a relatively large first opening 25 such as an open mask is used. Even when the size of the first opening 25 is relatively large, the deflection generated in the resin layer 10 due to the tensile stress inherent in the resin layer 10 can be reduced. Therefore, it is not necessary to separately arrange a magnetic metal on the first region 10a of the resin layer 10 in order to suppress the displacement of the vapor deposition pattern due to the deflection. The width (length along the short direction) of the first opening 25 may be, for example, 30 mm or more, or 50 mm or more. Although the upper limit of the width | variety of the 1st opening part 25 is not specifically limited, If it is 300 mm or less, the increase in a deflection amount can be suppressed, for example.

  According to the present embodiment, the maximum deflection amount δ of the resin layer 10 can be suppressed to a predetermined value δs or less. Here, the maximum deflection amount δ of the resin layer 10 refers to the maximum deflection amount of the first region 10a of the resin layer 10 when the magnetic metal body 20 is held in the horizontal direction. δs is not particularly limited, but is, for example, 5 μm, preferably 2 μm. For example, when the width of the first opening 25 of the magnetic metal body 20 is 30 mm or more, the maximum deflection amount δ of the resin layer 10 may be 5 μm or less. Alternatively, if the width of the first opening 25 is W and the maximum deflection amount of the resin layer 10 is δ, δ / W may be 0.01% or less.

  In the vapor deposition mask 100 of this embodiment, the magnetic metal body 20 receives a compressive stress from the resin layer 10 in the in-plane direction. When the laminated film is fixed to the frame by the stretching process, both the metal film and the resin film are subjected to tension in the in-plane direction from the frame, and a configuration in which the resin film applies compressive stress to the metal film cannot be obtained. Even when only the resin film is fixed to the frame in the stretching step, it is considered that the resin film is not in close contact with the metal film and the metal film is not subjected to compressive stress from the resin film.

  As a material of the resin layer 10, for example, polyimide can be suitably used. Polyimide is excellent in strength, chemical resistance and heat resistance. As the material of the resin layer 10, other resin materials such as polyparaxylene, bismaleimide, silica hybrid polyimide may be used. The linear thermal expansion coefficient αR (ppm / ° C.) of the resin film forming the resin layer 10 is preferably about the same as the linear thermal expansion coefficient of the substrate to be deposited. Such a resin layer 10 can be formed according to formation conditions such as a resin material and baking conditions. A method for forming the resin layer 10 will be described later.

  The thickness of the resin layer 10 is not particularly limited. However, if the resin layer 10 is too thick, a part of the deposited film may be formed thinner than a desired thickness (referred to as “shadowing”). From the viewpoint of suppressing the occurrence of shadowing, the thickness of the resin layer 10 is preferably 25 μm or less. Moreover, if it is 3 micrometers or more, the resin layer 10 of more uniform thickness can be formed by heat-processing with respect to the solution containing the resin material (or its precursor) provided on the support substrate. Also, from the viewpoint of the strength and washing resistance of the resin layer 10 itself, the thickness of the resin layer 10 is preferably 3 μm or more.

  Various magnetic metal materials can be used as the material of the magnetic metal body 20. For example, a material having a relatively large linear thermal expansion coefficient αM such as Ni, Cr, ferritic stainless steel, martensitic stainless steel, etc. may be used. For example, Fe—Ni alloy (Invar), Fe—Ni—Co system may be used. A material having a relatively small linear thermal expansion coefficient αM such as an alloy may be used.

  In addition, in the conventional vapor deposition mask as disclosed in Patent Document 1, the slit size of the metal layer is designed to be as small as possible, and the area ratio of the solid portion in the entire mask is relatively high ( In FIG. 1 of Patent Document 1, it is over 70%). For this reason, a material having a small linear thermal expansion coefficient αM (for example, αM: less than 6 ppm / ° C.) has been used as the material for the metal layer. This is for ensuring the shape stability of the vapor deposition mask in the vapor deposition step. On the other hand, in this embodiment, since the area ratio of the solid portion 21 occupying the entire mask can be reduced (that is, the area ratio of the first opening portion 25 can be increased), the linear thermal expansion coefficient that could not be conventionally used is high. It is also possible to use a metal. Therefore, various metal materials can be used regardless of the linear thermal expansion coefficient, and the degree of freedom in selecting the metal material can be increased.

  The thickness of the magnetic metal body 20 is not particularly limited. However, if the magnetic metal body 20 is too thin, the attracting force received from the magnetic field of the magnetic chuck becomes small, and it may be difficult to hold the vapor deposition mask 100 on the workpiece in the vapor deposition step. For this reason, the thickness of the magnetic metal body 20 is preferably 5 μm or more.

  The thickness of the magnetic metal body 20 is preferably set within a range where shadowing does not occur in the vapor deposition process. In the conventional vapor deposition mask, the metal layer that is the holding member is disposed in the vicinity of the opening of the resin film. For this reason, it was necessary to reduce the thickness of the metal layer (for example, 20 μm or less) from the viewpoint of suppressing shadowing in the vapor deposition process. On the other hand, according to the present embodiment, the resin layer 10 has a predetermined tensile stress, and the magnetic metal body 20 may not be disposed in the vicinity of the second opening 13 of the resin layer 10. For this reason, the end of the first opening 25 of the magnetic metal body 20 can be arranged far from the second opening 13 of the resin layer 10 (for example, the solid portion 21 and the second opening 13 of the magnetic metal body 20). Minimum distance Dmin: 1 mm or more). If the minimum distance Dmin is large, shadowing hardly occurs even if the magnetic metal body 20 is thickened. Therefore, the magnetic metal body 20 can be made thicker than before. The thickness of the magnetic metal body 20 depends on the vapor deposition angle, the taper angle of the magnetic metal body 20, and the minimum distance Dmin between the solid portion 21 and the second opening 13 of the magnetic metal body 20, for example, 1000 μm. It may be the above. When an open mask is used as the magnetic metal body 20, the thickness of the open mask can be increased to, for example, 300 μm or more by designing the size of the first opening 25 to be sufficiently larger than the unit region U. Although the upper limit of the thickness of the magnetic metal body 20 is not particularly limited, for example, if it is 1.5 mm or less, shadowing can be suppressed. Thus, according to the present embodiment, not only the material of the magnetic metal body 20 but also the degree of freedom in selecting the thickness can be increased.

  The frame 40 is made of, for example, a magnetic metal. Or you may form with materials other than a metal, for example, resin (plastic). In the conventional vapor deposition mask, the frame is required to have an appropriate rigidity so that the frame is not deformed or broken by the tension from the laminated film (resin film and metal film) fixed to the frame by the stretching process. For this reason, for example, a frame made of Invar having a thickness of 20 mm has been used. On the other hand, in the present embodiment, the frame 40 is attached without performing the stretching process or without applying a large tension to the magnetic metal body 20, so that the frame 40 is not subjected to the tension resulting from the stretching process. . Therefore, it is possible to use the frame 40 having a lower rigidity than the conventional one, and the degree of freedom in selecting the material of the frame 40 is high. Further, it is possible to make the frame 40 thinner than before. When a thinner frame or a resin frame is used than before, a vapor deposition mask 100 having a light weight and excellent handleability can be obtained.

<Other structural examples of vapor deposition mask>
FIGS. 2A and 2B are plan views schematically showing other vapor deposition masks 200 and 300 of the present embodiment, respectively. In these drawings, the same components as those in FIG. 1 are denoted by the same reference numerals. In the following description, only differences from the vapor deposition mask 100 will be described.

  In the vapor deposition masks 200 and 300, the magnetic metal body 20 has a plurality of first openings 25 in the unit region U. Within each first opening 25, two or more second openings 13 (not to mention the number shown in the figure) are positioned.

  As illustrated in FIG. 2A, the first openings 25 are arranged in the unit region U for each column (or for each row) of the second openings 13 arranged in the row direction and the column direction. It may be a slit. Alternatively, as illustrated in FIG. 2B, the first openings 25 may be arranged for each sub-region including the second openings 13 arranged in a plurality of columns and a plurality of rows.

  1 and 2 exemplify a vapor deposition mask having a plurality of unit regions U, the number and arrangement method of each unit region U, the number of second openings 13 in each unit region U and the arrangement method thereof. Is determined by the configuration of the device to be manufactured, and is not limited to the illustrated example. The number of unit regions U may be singular.

<Manufacturing method of vapor deposition mask>
With reference to FIG. 3 to FIG. 7, the method for manufacturing the vapor deposition mask of the present embodiment will be described by taking the method for manufacturing the vapor deposition mask 100 as an example. FIGS. 3A to 7B are process plan views showing an example of a method for manufacturing the vapor deposition mask 100, and process cross sections along the line AA shown in FIG. FIG.

  First, as shown in FIGS. 3A and 3B, a support substrate 60 is prepared, and the resin layer 10 is formed on the support substrate 60. For example, a glass substrate can be suitably used as the support substrate 60. The size and thickness of the glass substrate are not particularly limited.

  The resin layer 10 is formed as follows. First, a solution containing a resin material precursor (for example, a polyimide varnish) or a solution containing a resin material (for example, a soluble polyimide solution) is applied on the support substrate 60. As a method for applying the solution, a known method such as a spin coating method or a slit coater method can be used. Here, polyimide is used as the resin material, and a solution (polyimide varnish) containing a polyamic acid which is a precursor of polyimide is applied onto the support substrate 60 by a spin coating method. Subsequently, a polyimide layer is formed as the resin layer 10 by performing heat treatment (drying and firing). The heat treatment temperature can be set to 300 ° C. or higher, for example, 400 ° C. or higher and 500 ° C. or lower.

  The heat treatment conditions are set so as to cause the resin layer 10 to generate a predetermined tensile stress. For example, it may be set so as to generate a tensile stress greater than 0.2 MPa (preferably 3 MPa or more). The magnitude of the tensile stress depends on, for example, the thickness, shape and size of the support substrate 60 and the material properties of the support substrate 60 (Young's modulus, Poisson's ratio, thermal expansion coefficient, etc.) in addition to the material of the resin layer 10 and the heat treatment conditions. It can change. The heat treatment conditions here include a heat treatment temperature (maximum temperature), a temperature rising rate, a holding time at a high temperature (for example, 300 ° C. or higher), an atmosphere during the heat treatment, and the like. In addition to the temperature profile at the time of temperature increase, the temperature profile at the time of cooling is also included.

  In order to increase the tensile stress remaining in the resin layer 10, for example, it is conceivable to set the conditions so that imidization of the polyimide varnish is rapidly performed. As an example, it is possible to increase the tensile stress by increasing the heating rate. For example, when a polyimide layer is formed on a glass substrate by heat treatment, the glass substrate provided with a polyimide varnish may be heated to a temperature of 300 ° C. or more and 600 ° C. or less at a rate of 30 ° C./min or more. Further, the total time for which the glass substrate is held at a temperature of, for example, 300 ° C. or higher is set short (for example, within 30 minutes) through all heat treatment steps including temperature increase and cooling, so that it remains in the resin layer 10. Tensile stress can be increased. Furthermore, the total heat treatment time including temperature rise and cooling should be made relatively short (for example, within 1 hour), the holding time at the maximum temperature (standing time) should be shortened (for example, within 5 minutes), and rapidly cooled after reaching the maximum temperature. Also, the tensile stress can be increased. The heat treatment atmosphere is not particularly limited, and may be an air atmosphere or a nitrogen gas atmosphere. However, when the heat treatment is performed in a reduced pressure atmosphere of 100 Pa or less, the rate of temperature increase can be increased more easily.

  Instead of the polyimide varnish, the resin layer 10 may be formed by applying a solution containing a solvent-soluble polyimide (polymer) (soluble polyimide solution) on the support substrate 60 and drying it. The drying temperature is appropriately selected depending on the boiling point of the solvent and is not particularly limited, but is, for example, 100 ° C to 320 ° C, preferably 120 ° C to 250 ° C. Even in this case, it is possible to increase the tensile stress remaining in the resin layer 10 by increasing the rate of temperature increase to the same level as described above or by shortening the holding time at a high temperature.

  When the resin layer 10 is formed on the support substrate 60, the support substrate 60 may be warped depending on the material and thickness of the support substrate 60. Further, on the support substrate 60, the resin layer 10 has a stress distribution. For example, the tensile stress increases toward the end from the center of the resin layer 10. Further, a larger tensile stress can be generated in the direction in which the length of the support substrate 60 is larger.

  Here, with reference to FIG. 8A and FIG. 8B, the relationship between the stress caused by the film RF formed on the substrate SUB and the method of deformation of the substrate SUB will be described. As schematically shown in FIG. 8A, when the film RF has a tensile stress St, a compressive stress acts on the surface of the substrate SUB, so that the surface of the substrate SUB forms a concave surface. It deforms (warps). On the other hand, as shown in FIG. 8B, when the film RF has the compressive stress Sc, the surface of the substrate SUB has a convex surface because tensile stress acts on the surface of the substrate SUB. Deform to form.

  Since the resin layer 10 formed by the above-described method has a tensile stress, as shown in FIG. 8A, the support substrate 60 is deformed so as to form a concave surface, and the end of the support substrate 60 floats from the horizontal plane. There is a case. Depending on the material and thickness of the support substrate 60, the support substrate 60 may not be warped even when compressive stress is applied from the resin layer 10.

  Next, as shown in FIGS. 4A and 4B, an adhesive layer 50 is formed on a part of the resin layer 10. The adhesive layer 50 has an opening 55 corresponding to a first opening 25 of the magnetic metal body 20 described later. The adhesive layer 50 may be formed on the entire region of the resin layer 10 corresponding to the solid portion 21 of the magnetic metal body 20 (region to be the second region 10b) or may be formed on a part thereof. Good. Preferably, it arrange | positions so that the part used as the 1st area | region 10a among the resin layers 10 may be enclosed.

  The adhesive layer 50 may be a metal layer or may be formed of an adhesive. The adhesive layer 50 only needs to be fixed to the upper surface of the resin layer 10. For example, as the adhesive layer 50, a metal layer can be formed by a method such as electrolytic plating or electroless plating. As the material for the metal layer, various metal materials can be used, for example, Ni, Cu, and Sn can be suitably used. The thickness of the metal layer only needs to be large enough to withstand the welding process to the magnetic metal body 20 described later, and is, for example, 1 μm or more and 100 μm or less.

  Next, as shown in FIGS. 5A and 5B, the resin layer 10 formed on the support substrate 60 is fixed on the magnetic metal body 20 so as to cover the first opening 25. The resin layer 10 and the magnetic metal body 20 are bonded via the adhesive layer 50. Of the resin layer 10, a region 10 a located in the first opening 25 of the magnetic metal body 20 is a first region, and a region 10 b overlapping the solid portion 21 is a second region.

  The magnetic metal body 20 is made of a magnetic metal material and has at least one first opening 25. The manufacturing method of the magnetic metal body 20 is not particularly limited. For example, it can be manufactured by preparing a magnetic metal plate and forming the first opening 25 in the magnetic metal plate by a photolithography process. As a material of the magnetic metal body 20, for example, invar (Fe—Ni alloy containing about 36 wt% Ni) can be preferably used.

  When the adhesive layer 50 is a metal layer, laser light may be irradiated from the resin layer 10 side to weld the adhesive layer 50 to the magnetic metal body 20. At this time, spot welding may be performed at a plurality of positions at intervals. The number of spots to be spot welded and the interval (pitch) can be selected as appropriate. In this way, the resin layer 10 is bonded to the magnetic metal body 20 via the adhesive layer 50.

  The adhesive layer 50 may not be a metal layer. The resin layer 10 and the magnetic metal body 20 may be joined using an adhesive layer 50 formed of an adhesive (dry lamination or heat lamination).

  The adhesive layer 50 may be disposed only on the peripheral edge of the resin layer 10. If the portion of the magnetic metal body 20 that overlaps with the frame provided later is a “peripheral portion” and the portion located within the opening of the frame is a “mask portion”, the adhesive layer 50 is connected to the peripheral portion of the magnetic metal body 20. It may be arranged only between the resin layer 10. In that case, the solid portion 21 of the magnetic metal body 20 and the resin layer 10 are not bonded in the mask portion.

  It is preferable that the adhesive layer 50 is not formed on the portion that becomes the first region 10 a of the resin layer 10. When the adhesive layer 50 is formed in the first region 10a, the tensile stress of the resin layer 10 has an in-plane distribution in the first region 10a even after the support substrate 60 is peeled from the resin layer 10 in a later step. There is a possibility that.

  Next, as shown in FIGS. 6A and 6B, a plurality of second openings 13 are formed in the first region 10a of the resin layer 10 by, for example, a laser ablation method (laser processing step). Thus, the mask body 30 including the magnetic metal body 20 and the resin layer 10 is obtained.

A pulse laser is used for laser processing of the resin layer 10. Here, a YAG laser is used to irradiate a predetermined region of the resin layer 10 with laser light L1 having a wavelength of 355 nm (third harmonic). The energy density of the laser beam L1 is set to 0.36 J / cm ² , for example. As described above, the laser processing of the resin layer 10 is performed by performing a plurality of shots with the laser beam L1 focused on the surface of the resin layer 10. The shot frequency is set to 60 Hz, for example. The laser processing conditions (laser light wavelength, irradiation conditions, etc.) are not limited to the above, and are appropriately selected so that the resin layer 10 can be processed.

  Note that if the resin layer 10 has the stress distribution described above, the size and shape of the second opening 13 is the first when the stress distribution in the first region 10a is averaged after the support substrate 60 is peeled off. There is a case where it changes depending on the position in one area 10a. In such a case, considering the deformation amount of the second opening 13 due to the average of the stress distribution so that the second opening 13 has a desired size and shape after the support substrate 60 is peeled off, It is preferable to form the second opening 13.

  In the present embodiment, laser processing is performed on the resin layer 10 formed by baking (or drying) on the support substrate 60. Since there are no bubbles between the support substrate 60 and the resin layer 10, it is possible to form the second opening 13 having a desired size with higher accuracy than before, and to generate burrs (see FIG. 27). Is also suppressed.

  Subsequently, as shown in FIGS. 7A and 7B, the mask body 30 is peeled off from the support substrate 60. The support substrate 60 can be peeled off by, for example, a laser lift-off method. When the adhesive force between the resin layer 10 and the support substrate 60 is relatively weak, mechanical peeling may be performed using a knife edge or the like.

  Here, for example, an XeCl excimer laser is used, and the resin layer 10 is peeled from the support substrate 60 by irradiating laser light (wavelength: 308 nm) from the support substrate 60 side. The laser light only needs to have a wavelength that passes through the support substrate 60 and is absorbed by the resin layer 10, and other high-power lasers such as an excimer laser or a YAG laser may be used.

  When the support substrate 60 is peeled off, the resin layer 10 is in a state of being stretched (pinned) without sagging due to the inherent tensile stress. Moreover, in the part (here 1st area | region 10a) which is not joined to the magnetic metal body 20 among the resin layers 10, the magnitude | size of the tensile stress in a predetermined direction can be averaged.

  Thereafter, although not shown, the frame 40 is fixed to the mask body 30 (frame attachment step). Thus, the vapor deposition mask 100 shown in FIG. 1 is manufactured.

  In the frame attaching step, the frame 40 is placed on the peripheral portion of the magnetic metal body 20, and the peripheral portion of the magnetic metal body 20 and the frame 40 are joined. The frame 40 is made of a magnetic metal such as Invar. The peripheral part of the magnetic metal body 20 and the frame 40 may be welded (spot welding) by irradiating laser light from the resin layer 10 side. The pitch of spot welding can be selected as appropriate. In the example shown in FIG. 1, when viewed from the normal direction of the support substrate 60, the inner edge portion of the frame 40 and the inner edge portion of the magnetic metal body 20 are substantially aligned. May be exposed inside the frame 40. Alternatively, the frame 40 may cover the entire peripheral portion of the magnetic metal body 20 and a part of the resin layer 10.

  As described above, in the present embodiment, since the step (stretching step) of pulling the resin layer 10 and the magnetic metal body 20 in a predetermined in-plane direction and fixing it to the frame 40 is not performed, the frame has a smaller rigidity than the conventional one. 40 can be used. For this reason, the frame 40 may be formed of a resin such as ABS (acrylonitrile butadiene styrene) or PEEK (polyether ether ketone). Moreover, the joining method of the mask body 30 and the flame | frame 40 is not limited to laser welding. For example, the peripheral part of the magnetic metal body 20 and the frame 40 may be joined using an adhesive.

  Thereafter, if necessary, a magnetizing step of magnetizing the magnetic metal body 20 with an electromagnetic coil is performed, and the residual magnetic flux density of the magnetic metal body 20 is adjusted to, for example, 10 mT or more and 1000 mT. Note that the magnetizing step may not be performed. Even if the magnetizing step is not performed, the magnetic metal body 20 is a magnetic body. Therefore, by using a magnetic chuck, the vapor deposition mask 100 can be held on the workpiece in the vapor deposition step.

  In the above description, the method of forming the vapor deposition mask 100 has been described as an example. However, the other vapor deposition masks 200 and 300 can be manufactured by the same method as described above.

<Other manufacturing methods of vapor deposition mask>
In the method described above with reference to FIGS. 3 to 7, the second opening 13 is formed in the resin layer 10 after joining the resin layer 10 and the magnetic metal body 20. Prior to joining the metal body 20, the second opening 13 may be formed. In the method described above with reference to FIGS. 3 to 7, the support substrate 60 is peeled off from the mask body 30 before the mask body 30 and the frame 40 are joined. After bonding, the support substrate 60 may be peeled off. Further, the frame 40 may be attached to the magnetic metal body 20 before the resin layer 10 and the magnetic metal body 20 are joined.

  Hereinafter, another method for manufacturing the vapor deposition mask of the present embodiment will be described with reference to the drawings. In the drawing, the same components as those in FIGS. 3 to 7 are denoted by the same reference numerals. Further, the description will be focused on the points different from the method described above with reference to FIGS. 3 to 7, and the description is omitted when the formation method, material, thickness, and the like of each layer are the same as those described above.

  9A to 9E are process cross-sectional views illustrating another method for manufacturing a vapor deposition mask.

  First, as shown in FIG. 9A, the resin layer 10 is formed on the support substrate 60. The formation method of the resin layer 10 is the same as the method described above with reference to FIG. Here, the resin layer 10 is formed by applying a polyimide varnish on the support substrate 60 and baking it.

  Next, as shown in FIG. 9B, the second opening 13 is formed in the resin layer 10 by laser processing. The second opening 13 is formed in a region of the resin layer 10 that is located in the first opening 25 of the magnetic metal body 20 when bonded to the magnetic metal body 20 in a later step.

  Subsequently, as illustrated in FIG. 9C, the resin layer 10 and the magnetic metal body 20 are bonded via the adhesive layer 50. The joining method is the same as that described above with reference to FIG.

  Thereafter, as shown in FIG. 9D, the support substrate 60 is peeled from the resin layer 10 by, for example, a laser lift-off method.

  Next, as shown in FIG. 9E, the frame 40 is provided on the periphery of the magnetic metal body 20 by spot welding using, for example, laser light L2. In this way, the vapor deposition mask 100 is obtained.

  10A to 10E are process cross-sectional views illustrating another method for manufacturing a vapor deposition mask.

  First, as shown in FIG. 10A, the resin layer 10 is formed on the support substrate 60. The formation method of the resin layer 10 is the same as the method described above with reference to FIG.

  Next, as shown in FIG. 10B, the resin layer 10 and the magnetic metal body 20 are bonded via the adhesive layer 50.

  Subsequently, as shown in FIG. 10C, the second opening 13 is formed in the resin layer 10 by laser processing.

  Thereafter, as shown in FIG. 10D, the frame 40 is provided on the periphery of the magnetic metal body 20 by spot welding using, for example, laser light L2.

  Next, as shown in FIG. 10E, the support substrate 60 is peeled from the resin layer 10 by, for example, a laser lift-off method. In this way, the vapor deposition mask 100 is obtained.

  11A to 11E are process cross-sectional views illustrating still another method for manufacturing a vapor deposition mask.

  First, as shown in FIG. 11A, the resin layer 10 is formed on the support substrate 60. The formation method of the resin layer 10 is the same as the method described above with reference to FIG.

  Further, as shown in FIG. 11B, the frame structure is formed by attaching the magnetic metal body 20 to the frame 40. Specifically, the frame 40 is placed on the periphery of the magnetic metal body 20 and the periphery and the frame 40 are joined. Here, the peripheral part of the magnetic metal body 20 and the frame 40 are welded by irradiating the laser beam L3 from the magnetic metal body 20 side. For example, spot welding may be performed at a plurality of positions with a predetermined interval. In addition, the magnetic metal body 20 may be joined to the frame 40 in a state where a certain tension is applied to the magnetic metal body 20 in a predetermined direction using a stretch welding apparatus. However, in this embodiment, since the magnetic metal body 20 should just be fixed to the flame | frame 40, it is not necessary to provide a big tension | tensile_strength.

  Subsequently, as illustrated in FIG. 11C, the resin layer 10 and the magnetic metal body 20 are bonded via the adhesive layer 50.

  Next, as shown in FIG. 11D, the second opening 13 is formed in the resin layer 10 by laser processing.

  Thereafter, as shown in FIG. 11E, the support substrate 60 is peeled from the resin layer 10 by, for example, a laser lift-off method. In this way, the vapor deposition mask 100 is obtained.

  Thus, the vapor deposition mask 100 of this embodiment can be manufactured by various methods. In the method illustrated in FIG. 9, it is necessary to perform highly accurate alignment when the resin layer 10 in which the second opening 13 is formed and the magnetic metal body 20 are bonded. On the other hand, if the second opening 13 is formed after the resin layer 10 and the magnetic metal body 20 are joined, it is not necessary to perform such highly accurate alignment.

  In the method illustrated in FIGS. 10 and 11, the frame 40 is attached before the support substrate 60 is peeled off. In this case, the support substrate 60 to which the frame 40 having a large weight and bulk is attached is placed on the stage of the laser lift-off device, and the support substrate 60 is peeled off. Must be large and have high strength. Further, it is necessary to increase the distance WD (work distance) between the laser head and the stage. On the other hand, if the mounting process of the frame 40 is performed after the support substrate 60 is peeled off, the above-described restrictions are not imposed on the size, strength, WD, etc. of the laser lift-off device, which is more practical. .

<Effects of the manufacturing method of the present embodiment>
According to the vapor deposition mask manufacturing method of this embodiment, the resin layer 10 is formed by applying a solution containing a resin material or a solution containing a precursor of a resin material to the surface of the support substrate 60 and performing a heat treatment. The resin layer 10 formed by this method is in close contact with the support substrate 60, and no bubbles are generated at the interface between the resin layer 10 and the support substrate 60. Therefore, by forming the plurality of second openings 13 in the resin layer 10 on the support substrate 60, the second openings 13 having a desired size can be formed with higher accuracy than in the past, and the burr 98 (FIG. 27). Generation) can be suppressed.

  Further, according to the present embodiment, a desired tensile stress can be generated in the resin layer 10. Thereby, the amount of deflection generated in the first region 10a of the resin layer 10 can be reduced. For this reason, the resin layer 10 can be brought into close contact with the deposition target substrate without disposing the magnetic metal on the first region 10 a in the vicinity of the second opening 13. Therefore, the size of the first opening 25 can be increased, and for example, an open mask can be used. It is also possible to use the magnetic metal body 20 having an extremely small area ratio of the solid part (for example, 50% or less with respect to the area of the mask part). Moreover, since it is not necessary to form a magnetic metal layer patterned with high precision, the manufacturing process can be simplified. Further, it is possible to use a metal material having a large thermal expansion coefficient αM. Accordingly, the shape of the magnetic metal body 20 and the degree of freedom in selecting the metal material can be increased as compared with the conventional case.

  In the present embodiment, the resin layer 10 is formed on the support substrate 60, and the resin layer 10 and the magnetic metal body 20 supported by the support substrate 60 are joined. Since the resin layer 10 has a predetermined tensile stress as a residual stress, a stretching process for pulling the resin layer 10 and joining it to the frame is not performed. Since a stretching process using a large stretcher is not required, there is an advantage that the manufacturing cost can be reduced. In addition, since the stretching process is not performed, a predetermined in-plane tension is not applied from the frame 40 to the magnetic metal body 20. Therefore, the rigidity of the frame 40 can be reduced as compared with the prior art, and the degree of freedom in selecting the material of the frame 40 and the degree of freedom in designing the frame width, thickness, etc. are increased.

  In the conventional method described in Patent Document 1 and the like, laser processing is performed on the resin film after the resin film is fixed to the frame by the stretching process. On the other hand, in this embodiment, the attachment process of the frame 40 may be performed before the laser processing of the resin layer 10, or may be performed after the laser processing. When the mounting process of the frame 40 is performed after laser processing, there are the following merits. The mask body 30 (including the mask body before laser processing) supported by the support substrate 60 before the frame 40 is attached is lighter and easier to handle than the mask body 30 after the frame 40 is attached. Work such as installation and transfer to the processing machine becomes easy. Further, since the frame 40 is not attached, it is easy to irradiate the resin layer 10 with the laser light L1 and to process the resin layer 10 easily. Further, in the method of Patent Document 1, it is necessary to peel the laminated mask from the frame when the laser processing of the resin layer is not successful. However, when laser processing is performed before the frame 40 is attached, An exfoliation process is unnecessary.

  Furthermore, the resin film fixed to the frame by the stretching process is sensitive to changes in the surrounding environment such as humidity and temperature, and the amount of deflection of the resin film can vary depending on the surrounding environment. On the other hand, in the present embodiment, the deflection of the resin layer 10 is zero or slight, and the change in the deflection amount with time is hardly seen.

  By the way, the magnitude of the temperature rise of the vapor deposition mask in the vapor deposition process, that is, the difference ΔT (° C.) (= T2−T1) between the temperature T1 of the vapor deposition mask at the time of manufacture and the temperature T2 of the vapor deposition mask in the vapor deposition process. It depends on the method, vapor deposition equipment, etc. When the temperature difference ΔT is kept relatively small, ΔT is less than 3 ° C., for example, about 1 ° C. On the other hand, ΔT may be about 3 ° C. to 15 ° C. In addition, the temperature T1 at the time of manufacture in the present embodiment is an environmental temperature in which a manufacturing apparatus (for example, a laser processing machine used for processing the resin layer 10 or a welding machine used for a frame mounting process) is installed, For example, room temperature. The temperature T2 in the vapor deposition step refers to the temperature of the portion of the vapor deposition mask where vapor deposition is performed when performing vapor deposition while moving the position of the vapor deposition source relative to the workpiece (while scanning). . In the present embodiment, when ΔT is relatively large (for example, more than 3 ° C.), it is possible to suppress misalignment by the following method as necessary. First, the temperature rise (ΔT) of the vapor deposition mask is measured in advance. Next, based on the measurement result of ΔT, the amount of displacement generated by thermal expansion is calculated. The positional deviation amount includes a deviation between the position of the second opening 13 and the vapor deposition position, and a deviation between the shape of the second opening 13 and a desired vapor deposition pattern due to the deformation of the second opening 13 itself. The size of the second opening 13 of the resin layer 10 is formed to be smaller than the desired vapor deposition pattern by a predetermined amount so as to cancel out this displacement. Instead of calculating the amount of displacement, the amount of displacement may be measured by actually performing vapor deposition.

(Relationship between heat treatment conditions and tensile stress of resin layer)
This inventor examined the relationship between the resin layer formation conditions (heat treatment conditions), the tensile stress of the resin layer, and the amount of deflection of the resin layer. Hereinafter, the method and result will be described.

-Preparation method of samples A-C The heat treatment conditions were varied, the polyimide film 62 was formed on the glass substrate 61, and samples A-C were obtained. FIG. 12 is a top view of samples A to C. FIG.

  First, a glass substrate (AN-100 manufactured by Asahi Glass) 61 was prepared as a support substrate. The glass substrate 61 had a thermal expansion coefficient of 3.8 ppm / ° C., a size of 370 mm × 470 mm, and a thickness of 0.5 mm.

  A polyimide varnish (U-Varnish-S manufactured by Ube Industries, Ltd.) was applied on a part of the glass substrate 61. Here, as shown in FIG. 12, a polyimide varnish was applied to a predetermined region (330 mm × 366 mm) in the glass substrate 61.

  Next, the glass substrate 61 coated with the polyimide varnish was heat-treated in a vacuum atmosphere at a pressure of 20 Pa to form a polyimide film 62. In the heat treatment, the temperature was raised from room temperature (25 ° C. here) to 500 ° C. (maximum temperature), and held at 500 ° C. for a predetermined time. Thereafter, nitrogen gas was supplied as a purge gas, and then rapidly cooled (3 minutes). Table 1 shows the temperature rising time up to 500 ° C., the holding time at 500 ° C., the temperature rising speed (from room temperature to reaching 500 ° C.), and the thickness of the polyimide film 62 in each sample.

  Thus, the glass substrate 61 in which the polyimide film 62 was formed was obtained as sample AC. In samples A to C, compressive stress was applied to the glass substrate 61 due to the tensile stress of the polyimide film 62, and the glass substrate 61 was warped. Table 1 shows the average value of the warpage amount of the glass substrate 61 in the long side direction and the short side direction.

Calculation of tensile stress of polyimide film 62 Next, the tensile stress of the polyimide film 62 was calculated from the amount of warpage of the glass substrate 61 in the samples A to C. The results are shown in Table 1. The tensile stress can be obtained from the thickness of the glass substrate 61, Young's modulus, Poisson's ratio, the thickness of the polyimide film 62, and the curvature radius (approximate value) of the glass substrate 61 using the Stoney equation.

  For comparison, Table 1 also shows the results when a polyimide film was produced under conditions with a low rate of temperature increase (referred to as “sample D”). As shown in Table 1, in Sample D, after reaching 120 ° C., 150 ° C., and 180 ° C., the temperature was raised to 450 ° C. stepwise by holding at that temperature for a predetermined time. The tensile stress of sample D is a value calculated by setting the warp of the glass substrate 61 to 10 μm.

  Furthermore, six samples B1 to B6 were produced under the same heat treatment conditions, and the tensile stress generated in the polyimide film 62 was calculated. The heat treatment conditions for Samples B1 to B6 were the same as for Sample B (room temperature to 500 ° C., pressure: 20 Pa, heating time: 13 minutes (temperature increase 8 minutes + holding 5 minutes), temperature increase rate: 59 ° C./minute) . However, the rate at which the chamber in which the glass substrate 61 provided with the polyimide varnish was installed was decompressed was lower than that of the sample B before the heat treatment. For these samples as well, the tensile stress of the polyimide film was determined from the amount of warpage of the glass substrate in the same manner as described above. The results are shown in Table 2.

  From the above results, it was confirmed that the tensile stress generated in the resin layer on the support substrate can be controlled by the heat treatment conditions. For example, it was found that a resin layer having a large tensile stress can be formed by increasing the temperature rising rate. Here, the heat treatment was performed by changing the heating rate for each sample, but the tensile stress of the resin layer can be varied even if the heat treatment conditions other than the heating rate are changed.

(Example)
The vapor deposition mask of an Example was produced and the deflection amount of the resin layer was evaluated, The result is demonstrated.

  Fig.13 (a) is a top view for demonstrating the vapor deposition mask of Example 1, FIG.13 (b) is sectional drawing along the BB line of Fig.13 (a). The manufacturing method of the vapor deposition mask of Example 1 was the same as that described above with reference to FIG.

-Preparation of the vapor deposition mask of Example 1 In Example 1, the glass substrate (200x130 mm, thickness: 0.5 mm) was used as a support substrate. A polyimide film (thickness: 20 μm) 71 was formed on the glass substrate under the same heat treatment conditions as in Sample B above.

  Moreover, an open mask (200 × 110 mm, thickness: 100 μm) 72 having three first openings (50 mm × 90 mm) 73 was prepared as a magnetic metal body. This open mask 72 was welded to a SUS frame (not shown) (200 × 130 mm, thickness: 10 mm, frame width 20 mm).

  Next, an epoxy resin-based adhesive (EP330 manufactured by Cemedine) 75 was applied as an adhesive layer on part of the polyimide film 71 on the glass substrate. Thereafter, the polyimide film 71 and the open mask 72 were joined via the adhesive 75.

  Subsequently, the support substrate was peeled from the polyimide film 71. The polyimide film 71 was not provided with the second opening. Thus, the vapor deposition mask of Example 1 was obtained.

  The vapor deposition mask of Example 1 includes three cells C1 to C3. Here, the “cell” refers to a portion including each first opening 73 and its periphery when the vapor deposition mask is viewed from the normal direction, and corresponds to the unit region U described above. In each cell, a region 71 a exposed by the first opening 73 in the polyimide film 71 is referred to as a “first region”, and a region 71 b bonded to the open mask 72 by the adhesive 75 is referred to as a “second region”.

-Preparation of the vapor deposition mask of Example 2 The vapor deposition mask of Example 2 was produced by the method similar to Example 1 except the point which formed the polyimide film 71 on the heat processing conditions similar to said sample D. FIG. However, in Example 2, the polyimide film 71 was not attached to the opening located in the center among the three first openings 73 of the open mask 72. Therefore, the vapor deposition mask of Example 2 includes two cells.

-Observation of the vapor deposition mask of Example 1, 2 The photograph of the vapor deposition mask of Example 1 and Example 2 is shown to Fig.23 (a) and (b). In the vapor deposition mask of Example 1, no wrinkles depending on the deflection of the polyimide film 71 are observed. In addition, the polyimide film 71 has a pattern that seems to depend on the distribution of the film stress. On the other hand, in the vapor deposition mask of Example 2, wrinkles depending on the deflection of the polyimide film 71 are seen, and it can be seen that the deflection is increased at the center of the cell.

-Deflection measurement of polyimide film 71 About each of the cells C1-C3 of the vapor deposition mask of Example 1, the deflection of the polyimide film 71 was measured.

  FIGS. 14A and 14B are plan views showing the scan direction of each cell in the deflection measurement. Here, using a laser displacement meter (manufactured by Keyence Corporation, LK-H057K), scanning is performed in the short side direction and the long side direction of the first opening 73 in each cell, and the change in the height of the polyimide film 71 is examined. It was. The data sampling period was 200 μs.

  15-20 is a figure which shows the measurement result of the polyimide film 71 of each cell in the vapor deposition mask of Example 1. FIG.

  FIGS. 15A to 15C and FIGS. 16A to 16C are diagrams showing changes in the height of the polyimide film 71 of the cell C1 in the vapor deposition mask of Example 1, respectively. Similarly, FIGS. 17A to 17C and FIGS. 18A to 18C are diagrams showing changes in the height of the polyimide film 71 of the cell C2, respectively, and FIGS. c) and FIGS. 20A to 20C are diagrams showing changes in the height of the polyimide film 71 of the cell C3. Further, FIGS. 15, 17, and 19 (a) to 19 (c) show the short direction of the cell along the lines II, II-II, and III-III shown in FIG. 14 (a), respectively. Shows the measurement results when the polyimide film 71 is scanned. 16, 18, and 20 (a) to 20 (c) show polyimide films in the longitudinal direction of the cell along the lines IV-IV, VV, and VI-VI shown in FIG. 14 (a), respectively. The measurement result when 71 is scanned is shown.

  In these figures, the vertical axis represents the height of the polyimide film 71, which is a value based on the height of the central portion of each cell. The horizontal axis represents the number of data points acquired at intervals of 200 μs. Note that the measurement is performed by manually moving the sensor, and since the scanning speed of the sensor is not constant, the horizontal axis does not correspond to the distance.

  15 to 20, the height of the first region 71a of the polyimide film 71 has an inclination, and this inclination depends on the tilt of the frame, the thickness variation of the adhesive 75, and the like. A step h is formed between the first region 71a and the second region 71b of the polyimide film 71. This is because the vapor deposition mask of Example 1 is installed with the polyimide film 71 facing up, and measurement is performed with a displacement meter from below (on the open mask 72 side of the polyimide film 71). The step h corresponds to the total thickness of the open mask 72 and the adhesive 75.

  Correction lines are indicated by broken lines in the measurement results of the cross sections of the cells C1 to C3. The “correction line” represents a change in the height of the polyimide film 71 (first region 71a) when the deflection of the polyimide film 71 is zero. When the deflection occurs in the polyimide film 71, the actually measured value of the height of the polyimide film 71 is smaller than the height of the correction line. Here, the maximum value of the difference in height between the correction line and the actual measurement value (when the actual measurement value is negative with respect to the height of the correction line) was obtained as the deflection amount of the polyimide film 71 in each cross section. Further, the maximum value of the deflection amount was set as the “maximum deflection amount” of the cell.

  As a result, in all the cells, the maximum deflection amount was 5 μm or less. Therefore, in the vapor deposition mask of Example 1, regardless of the position of the cell, the first region 71a of the polyimide film 71 has a predetermined magnitude of tensile stress, and the amount of deflection (that is, the measured value and the correction line) It was found that the difference in height) can be suppressed. Further, it was found that the stress distribution generated immediately after the heat treatment is reduced (averaged) in the first region 71a of the polyimide film 71.

  On the other hand, with respect to the cell of the vapor deposition mask of Example 2, the deflection of the polyimide film 71 was measured in the same manner as in Example 1 to obtain the maximum deflection.

  FIGS. 21A to 21C and FIGS. 22A to 22C respectively show changes in the height of the polyimide film 71 of one cell in the vapor deposition mask of Example 2, and FIG. The measurement results when the polyimide film 71 is scanned along the lines II, II-II, III-III, IV-IV, VV, and VI-VI shown in FIG.

  As a result, in the vapor deposition mask of Example 2, the maximum deflection amount in each cell was 400 μm or more and 500 μm or less, and it was found that a larger deflection than that in Example 1 occurred. Therefore, it was confirmed that the amount of deflection of the polyimide film 71 can be reduced by increasing the tensile stress of the polyimide film 71.

  Note that a resin film having a predetermined tensile stress (for example, 3 MPa or more) and a conventional resin film formed under a condition that the tensile stress is relatively small are a compressive stress (warpage) applied to the support substrate or the magnetic metal body. For example, the measurement of the in-plane orientation (IR absorption spectrum) of the resin film. For example, in the conventional resin film, the IR absorption spectra on the front surface and the back surface are substantially the same, but in the resin film having a large tensile stress, differences such as different IR absorption spectra on the front surface and the back surface may occur. Further, a resin film having a predetermined tensile stress bonded to an open mask and a conventional resin film fixed to a frame by stretching can be distinguished from each other by observation using polarized light, for example.

(Method for manufacturing organic semiconductor element)
The vapor deposition mask by embodiment of this invention is used suitably for the vapor deposition process in the manufacturing method of an organic-semiconductor element.

  Hereinafter, the manufacturing method of the organic EL display device will be described as an example.

  FIG. 24 is a cross-sectional view schematically showing a top emission type organic EL display device 500.

  As shown in FIG. 24, the organic EL display device 500 includes an active matrix substrate (TFT substrate) 510 and a sealing substrate 520, and includes a red pixel Pr, a green pixel Pg, and a blue pixel Pb.

  The TFT substrate 510 includes an insulating substrate and a TFT circuit formed on the insulating substrate (both not shown). A planarization film 511 is provided so as to cover the TFT circuit. The planarizing film 511 is formed from an organic insulating material.

  On the planarizing film 511, lower electrodes 512R, 512G, and 512B are provided. The lower electrodes 512R, 512G, and 512B are formed on the red pixel Pr, the green pixel Pg, and the blue pixel Pb, respectively. The lower electrodes 512R, 512G and 512B are connected to the TFT circuit and function as an anode. A bank 513 that covers the ends of the lower electrodes 512R, 512G, and 512B is provided between adjacent pixels. The bank 513 is made of an insulating material.

  Organic EL layers 514R, 514G, and 514B are provided on the lower electrodes 512R, 512G, and 512B of the red pixel Pr, the green pixel Pg, and the blue pixel Pb, respectively. Each of the organic EL layers 514R, 514G, and 514B has a stacked structure including a plurality of layers formed from an organic semiconductor material. This stacked structure includes, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order from the lower electrodes 512R, 512G, and 512B sides. The organic EL layer 514R of the red pixel Pr includes a light emitting layer that emits red light. The organic EL layer 514G of the green pixel Pg includes a light emitting layer that emits green light. The organic EL layer 514B of the blue pixel Pb includes a light emitting layer that emits blue light.

  An upper electrode 515 is provided on the organic EL layers 514R, 514G, and 514B. The upper electrode 515 is formed using a transparent conductive material so as to be continuous over the entire display area (that is, common to the red pixel Pr, the green pixel Pg, and the blue pixel Pb), and functions as a cathode. A protective layer 516 is provided on the upper electrode 515. The protective layer 516 is formed from an organic insulating material.

  The above-described structure of the TFT substrate 510 is sealed with a sealing substrate 520 bonded to the TFT substrate 510 with a transparent resin layer 517.

  The organic EL display device 500 can be manufactured as follows using the vapor deposition mask according to the embodiment of the present invention. FIGS. 25A to 25D and FIGS. 26A to 26D are process cross-sectional views illustrating manufacturing steps of the organic EL display device 500. In the following description, an organic semiconductor material is deposited on the work using the deposition mask 101R for red pixels, the deposition mask 101G for green pixels, and the deposition mask 101B for blue pixels in this order (organic EL layer on the TFT substrate 510). The description will focus on the process of forming 514R, 514G and 514B.

  First, as shown in FIG. 25A, a TFT substrate 510 having a TFT circuit, a planarizing film 511, lower electrodes 512R, 512G, and 512B and a bank 513 formed on an insulating substrate is prepared. The process of forming the TFT circuit, the planarizing film 511, the lower electrodes 512R, 512G, and 512B and the bank 513 can be performed by various known methods.

  Next, as shown in FIG. 25 (b), the TFT substrate 510 is placed close to the vapor deposition mask 101R held in the vacuum vapor deposition apparatus by the transfer device. At this time, the deposition mask 101R and the TFT substrate 510 are aligned so that the second opening 13R of the resin layer 10 overlaps the lower electrode 512R of the red pixel Pr. Further, the evaporation mask 101R is brought into close contact with the TFT substrate 510 by a magnetic chuck (not shown) disposed on the opposite side of the TFT substrate 510 from the evaporation mask 101R.

  Subsequently, as shown in FIG. 25C, an organic semiconductor material is sequentially deposited on the lower electrode 512R of the red pixel Pr by vacuum evaporation to form an organic EL layer 514R including a light emitting layer that emits red light. .

  Next, as shown in FIG. 25D, instead of the vapor deposition mask 101R, the vapor deposition mask 101G is installed in a vacuum vapor deposition apparatus. The vapor deposition mask 101G and the TFT substrate 510 are aligned so that the second opening 13G of the resin layer 10 overlaps the lower electrode 512G of the green pixel Pg. Further, the deposition mask 101G is brought into close contact with the TFT substrate 510 by a magnetic chuck.

  Subsequently, as shown in FIG. 26A, organic semiconductor materials are sequentially deposited on the lower electrode 512G of the green pixel Pg by vacuum vapor deposition to form an organic EL layer 514G including a light emitting layer that emits green light. .

  Next, as shown in FIG. 26B, a vapor deposition mask 101B is placed in a vacuum vapor deposition apparatus in place of the vapor deposition mask 101G. The vapor deposition mask 101B and the TFT substrate 510 are aligned so that the second opening 13B of the resin layer 10 overlaps the lower electrode 512B of the blue pixel Pb. Further, the vapor deposition mask 101B is brought into close contact with the TFT substrate 510 by a magnetic chuck.

  Subsequently, as shown in FIG. 26C, an organic semiconductor material is sequentially deposited on the lower electrode 512B of the blue pixel Pb by vacuum vapor deposition to form an organic EL layer 514B including a light emitting layer that emits blue light. .

  Next, as shown in FIG. 26D, the upper electrode 515 and the protective layer 516 are sequentially formed on the organic EL layers 514R, 514G, and 514B. The formation of the upper electrode 515 and the protective layer 516 can be performed by various known methods. In this way, the TFT substrate 510 is obtained.

  Thereafter, the sealing substrate 520 is bonded to the TFT substrate 510 with the transparent resin layer 517, whereby the organic EL display device 500 shown in FIG. 24 is completed.

  In this example, three vapor deposition masks 101R, 101G, and 101B corresponding to the organic EL layers 514R, 514G, and 514B of the red pixel Pr, the green pixel Pg, and the blue pixel Pb are used, respectively. The organic EL layers 514R, 514G, and 514B corresponding to the red pixel Pr, the green pixel Pg, and the blue pixel Pb may be formed by sequentially shifting. In the organic EL display device 500, a sealing film may be used instead of the sealing substrate 520. Alternatively, a thin film encapsulation (TFE) structure may be provided on the TFT substrate 510 without using a sealing substrate (or a sealing film). The thin film sealing structure includes, for example, a plurality of inorganic insulating films such as a silicon nitride film. The thin film sealing structure may further include an organic insulating film.

  In the above description, the top emission type organic EL display device 500 is exemplified, but it goes without saying that the vapor deposition mask of the present embodiment is also used for manufacturing a bottom emission type organic EL display device.

  Moreover, the organic EL display device manufactured using the vapor deposition mask of this embodiment does not necessarily need to be a rigid device. The vapor deposition mask of this embodiment is also suitably used for manufacturing a flexible organic EL display device. In a method for manufacturing a flexible organic EL display device, a TFT circuit or the like is formed on a polymer layer (for example, a polyimide layer) formed on a support substrate (for example, a glass substrate), and the polymer layer is formed after the protective layer is formed. The entire laminated structure is peeled off from the support substrate (for example, a laser lift-off method is used).

  Moreover, the vapor deposition mask of this embodiment is used also for manufacture of organic-semiconductor elements other than an organic electroluminescent display apparatus, and is used suitably especially for manufacture of the organic-semiconductor element which needs formation of a high-definition vapor deposition pattern. .

  The vapor deposition mask according to the embodiment of the present invention is preferably used for manufacturing an organic semiconductor element such as an organic EL display device, and particularly suitable for manufacturing an organic semiconductor element that requires formation of a high-definition vapor deposition pattern. Used.

DESCRIPTION OF SYMBOLS 10 Resin layer 10a 1st area | region 10b 2nd area | region 13 Opening part 20 Magnetic metal body 21 Solid part 25 Opening part 30 Mask body 40 Frame 50 Adhesion layer 60 Support substrate L1, L1, L3 Laser beam 100, 200, 300 Deposition mask 500 Organic EL display device 510 TFT substrate 511 Flattening film 512B, 512G, 512R Lower electrode 513 Bank 514B, 514G, 514R Organic EL layer 515 Upper electrode 516 Protective layer 517 Transparent resin layer 520 Sealing substrate Pb Blue pixel Pg Green pixel Pr Red pixel U unit area

Claims (14)

A method for producing a vapor deposition mask comprising a resin layer and a magnetic metal body formed on the resin layer,
(A) preparing a magnetic metal body having at least one first opening;
(B) preparing a substrate;
(C) forming a resin layer by performing a heat treatment after applying a solution containing a resin material or a varnish of a resin material to the surface of the substrate;
(D) After the step (A), the step (B) and the step (C), the resin layer formed on the substrate is placed on the magnetic metal body with the at least one first opening. A process of fixing so as to cover,
(D1) forming a metal layer by plating on a part of the resin layer;
(D2) a step of bonding the resin layer to the magnetic metal body via the metal layer;
Including
The metal layer is not formed in a region of the resin layer located in the at least one first opening, and in a region of the resin layer located in the at least one first opening. There is no magnetic metal present, the process,
(E) forming a plurality of second openings in the resin layer;
(F) After the said process (D) and the said process (E), the process of peeling the said board | substrate from the said resin layer is included, The manufacturing method of a vapor deposition mask. The step (E) is performed after the step (D),
The manufacturing method according to claim 1, wherein the plurality of second openings are formed in a region of the resin layer located in the at least one first opening of the magnetic metal body.   The said process (E) is a manufacturing method of Claim 1 performed between the said process (C) and the said process (D).   The manufacturing method in any one of Claim 1 to 3 which further includes the process of providing a flame | frame in the peripheral part of the said magnetic metal body.   In the said process (C), the said heat processing is performed on the conditions which produce | generate the tensile stress larger than 0.2 MPa at room temperature in the layer surface direction in the said resin layer, The manufacturing method in any one of Claim 1 to 4 .   The manufacturing method according to claim 1, wherein in the step (F), after the substrate is peeled off, the magnetic metal body is applied with a compressive stress from the resin layer. Previous Stories step (D2), by welding the metal layer on the magnetic metal member through the metallic layer is a step of bonding the resin layer on the magnetic metal member to claims 1 6 The manufacturing method as described. The manufacturing method according to any one of claims 1 to 7 , wherein a width along the short direction of the at least one first opening is 30 mm or more.   The manufacturing method according to claim 1, wherein the magnetic metal body has a thickness of 1000 μm or more. The deposition mask is a deposition mask for forming a plurality of devices on one deposition target substrate, each having a plurality of unit regions corresponding to one of the plurality of devices,
The manufacturing method according to claim 1, wherein the magnetic metal body has an open mask structure having one first opening for each of the plurality of unit regions . Frame,
A magnetic metal body including at least one first opening supported by the frame;
A resin layer disposed on the magnetic metal body and covering the at least one first opening;
An adhesive layer located between the resin layer and the magnetic metal body and joining the resin layer and the magnetic metal body;
The resin layer has a tensile stress in the in-plane direction,
The magnetic metal body receives compressive stress in the in-plane direction from the resin layer,
The tensile stress at room temperature of the resin layer is 3 MPa or more,
The resin layer is formed by forming a resin film having a tensile stress of 3 MPa or more at room temperature on the substrate, fixing the resin film to the magnetic metal body, and then peeling the substrate from the resin film. The vapor deposition mask , wherein the resin layer and the magnetic metal body are fixed to the frame without performing a stretching process in a predetermined direction . The vapor deposition mask according to claim 11, wherein no magnetic metal is present in a region of the resin layer located in the at least one first opening of the magnetic metal body .   The adhesive layer is a metal layer, the metal layer is a plating layer disposed on the resin layer, and the metal layer is located in a region located in the at least one first opening of the resin layer. The vapor deposition mask of Claim 11 or 12 which is not arrange | positioned. The manufacturing method of an organic-semiconductor element including the process of vapor-depositing organic-semiconductor material on a workpiece | work using the vapor deposition mask in any one of Claim 11 to 13 .

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