JP2008150691A - Mask and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask, in which a supporting substrate on which chips are fixed can be preferably recovered and re-utilized, and its manufacturing method. <P>SOLUTION: In the mask 10 having the supporting substrate 30 holding a plurality of chips 20, alignment marks 33 and 34 are formed by irradiating a position on the way in the thickness direction of the supporting substrate 30 consisting of a sheet glass to modify the glass. Therefore, when any of the plurality of chips 20 is found to be defective and the chips 20 are removed to recover the supporting substrate 30, the mask 10 can be manufactured again by using the recovered supporting substrate 30, since the alignment marks 33 and 34 do not disappear. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a mask used for forming a thin film having a predetermined pattern on a substrate to be processed by a physical vapor deposition method such as vacuum vapor deposition or sputtering, or a chemical vapor deposition method such as CVD (Chemical Vapor Deposition). And a manufacturing method thereof.

  When manufacturing various semiconductor devices and electro-optical devices, a mask having an opening is overlaid on a substrate to be processed, and in this state, a physical vapor deposition method such as a vacuum deposition method or a sputtering method, or a chemical vapor deposition method such as CVD. A film may be formed by a film forming method. For example, when manufacturing an organic electroluminescence (hereinafter referred to as EL (Electro Luminescence)) device as an electro-optical device, a photolithography technique is used to form an organic EL material (organic functional layer) for a light emitting element into a predetermined shape. Then, when the resist mask for patterning is removed with an etching solution or oxygen plasma, the organic material is exposed to moisture or oxygen and deteriorates. For this reason, in order to form an organic functional layer, the mask vapor deposition method which does not require a resist mask is suitable.

  However, if the substrate to be processed is large, the mask must be formed large, but it is very difficult to manufacture such a mask with high accuracy.

Therefore, it has been proposed to form a mask by bonding a plurality of silicon chips formed with openings to a support substrate. Here, the support substrate is formed with an alignment mark for bonding the chip and an alignment mark for aligning the mask with the substrate to be processed at the time of film formation. Since it is formed by a laser marking technique, an etching technique, a film forming technique, etc., it is formed on the surface of the support substrate (see, for example, Patent Document 1).
JP 2005-276480 A

  However, conventionally, since a support substrate with high flatness is required from the viewpoint of film formation accuracy, the support substrate is expensive, but a problem occurs in any of a plurality of chips. In this case, the entire mask including the support substrate is discarded, which increases the deposition cost.

  Here, when a defect is found in any of the plurality of chips, the present inventor removes the chip, collects the support substrate, and re-manufactures a mask using the collected support substrate, thereby forming a film. We propose to reduce the cost.

  However, when the chip is removed from the support substrate by wet etching, the type of etchant that can selectively dissolve only silicon is limited. If other solutions are used, the etchant is formed on the support substrate surface. There is a problem that the alignment mark that has been dissolved is dissolved, or the surface of the support substrate is dissolved and the alignment mark disappears.

  In view of the above problems, an object of the present invention is to provide a mask that can suitably recover and reuse a support substrate on which a chip is fixed, and a method for manufacturing the same.

  In order to solve the above problems, in the present invention, in a mask having a plurality of chips in which openings corresponding to a pattern to be formed on a substrate to be processed are formed, and a support substrate that holds the plurality of chips, The support substrate is characterized in that an alignment mark is formed at an intermediate position in the thickness direction.

  In the present invention, since the alignment mark is formed inside the support substrate (in the middle of the thickness direction), even if the surface of the support substrate is scratched, which makes it difficult to recognize the alignment mark. If the vicinity of the formed surface is polished, the alignment mark can be recognized. Therefore, the support substrate can continue to be used unless a fatal damage such as the entire breakage occurs. In addition, when a defect is found in any of the plurality of chips, the support substrate can be recovered by removing the chip by etching, and the mask can be manufactured again using the recovered support substrate. Costs can be reduced and film formation costs can be reduced. At this time, since the alignment mark is formed inside the support substrate, when the chip is removed from the support substrate by etching, the alignment mark is not exposed to the etching solution and remains as it is without being dissolved. Further, when the chip is removed from the support substrate by etching, the alignment mark does not disappear even if the surface of the support substrate is dissolved. Therefore, since the support substrate can be recovered in a suitable state, it can be reused for manufacturing the mask.

  In the present invention, it is preferable that the support substrate is formed of a sheet glass, and the alignment mark is formed of a modified portion of the sheet glass. Such a modified portion can be easily formed by condensing the laser beam at an intermediate position in the thickness direction of the support substrate. In the present invention, “glass” is meant to include quartz glass in addition to glass such as alkali-free glass, borosilicate glass, and soda glass.

  In the present invention, the alignment mark is preferably formed at a position having a depth of 10 μm or more and 100 μm or less from the surface of the support substrate. Conventionally, an alignment mark is formed on the surface of the support substrate and recognized by a camera or the like.In the present invention, however, the alignment mark is formed inside the support substrate. It may be difficult to recognize. However, in the present invention, since the alignment mark is formed at a position having a depth of 100 μm or less from the surface of the support substrate in the middle position in the thickness direction of the support substrate, the alignment mark is formed at the middle position in the thickness direction of the support substrate. Even if formed, it can be reliably recognized by a camera or the like. Also, if the alignment mark is formed at a position that is too close to the surface of the support substrate, the alignment mark may be damaged when the support substrate is scratched. If it is formed at a position of 10 μm or more, damage to the alignment mark can be avoided.

  In the present invention, in a mask manufacturing method having a plurality of chips in which openings corresponding to a pattern to be formed on a substrate to be processed are formed, and a support substrate for holding the plurality of chips, a plate as the support substrate And using a glass-like glass, condensing a laser beam in the middle of the plate-like glass in the thickness direction, and by using the modified portion of the glass with the laser beam, an alignment mark is placed in the middle of the support substrate in the thickness direction. An alignment mark forming step to be formed and a chip fixing step of fixing the plurality of chips to the support substrate are performed. According to such a method, the alignment mark can be formed by modifying the intermediate position in the thickness direction of the sheet glass simply by condensing the laser beam at the intermediate position in the thickness direction of the support substrate. In addition, the irradiation with laser light has higher working efficiency than a method of forming an alignment mark made of a Cr film on the surface of the support substrate by a photolithography technique.

  In the present invention, the laser beam is, for example, a femtosecond laser. If the femtosecond laser is used, the sheet glass can be modified without applying a large stress, so that problems such as generation of cracks in the sheet glass can be avoided.

  In the present invention, a YAG (Yttrium Aluminum Garnet) laser may be used as the laser beam. If a YAG laser is used, processing can be performed in a short time, so that alignment marks can be formed efficiently.

  In the present invention, after the chip fixing step, when a defect is found in any of the plurality of chips, a chip removing step of removing the plurality of chips from the support substrate by etching is performed, and the chip removing step Another chip is fixed to the support substrate from which the plurality of chips have been removed. If comprised in this way, since the mask can be manufactured again using the collect | recovered support substrate, the film-forming cost can be reduced.

[Embodiment 1]
Before describing a mask according to an embodiment of the present invention, a configuration example of an organic EL device in which film formation is performed using the mask will be described.

(Configuration example of organic EL device)
FIG. 1 is a sectional view of an essential part of an organic EL device to which the present invention is applied. An organic EL device 1 shown in FIG. 1 is used as a line head used in a display device or an electrophotographic printer, and includes a light emitting element group 3A formed by arranging a plurality of organic EL elements 3. I have. In the case where the organic EL device 1 is a bottom emission type in which the light emitted from the light emitting layer 7 is emitted from the pixel electrode 4 side, the emitted light is extracted from the element substrate 2 side. Therefore, a transparent or translucent substrate is used as the element substrate 2. For example, glass, quartz, resin (plastic, plastic film) and the like can be mentioned, and a glass substrate is particularly preferably used. On the element substrate 2, a circuit unit 5 including a driving transistor 5a (thin film transistor) and the like electrically connected to the pixel electrode 4 is formed on the lower layer side of the light emitting element group 3A. An organic EL element 3 is formed on the substrate. The organic EL element 3 includes a pixel electrode 4 that functions as an anode, a hole transport layer 6 that injects / transports holes from the pixel electrode 4, a light-emitting layer 7 (organic functional layer) made of an organic EL material, The electron injection layer 8 for injecting / transporting electrons, the cathode 9, and the protective layer are stacked in this order.

  In order to manufacture such an organic EL device 1, each layer is formed on the element substrate 2 by using a semiconductor process such as a film forming process or a patterning process using a resist mask. 6, the organic functional layers such as the light emitting layer 7 and the electron injection layer 8 are easily deteriorated by moisture and oxygen. For this reason, when an organic functional layer such as the light emitting layer 7 is formed, and further, when the cathode 9 is formed, if a patterning process using a resist mask is performed, the resist mask is removed with an etching solution or oxygen plasma. At this time, the organic functional layer is deteriorated by moisture or oxygen. Therefore, in this embodiment, when forming an organic functional layer such as the light emitting layer 7 and further when forming the cathode 9, a thin film having a predetermined shape is formed on the element substrate 2 by using a mask vapor deposition method. A patterning process using a resist mask is not performed. In this mask vapor deposition method, vapor deposition is performed in a state where a mask is overlapped at a predetermined position of a large substrate (element substrate 2 / substrate to be processed). In the case of forming the light emitting layer 7, the low molecular organic EL material is heated and evaporated to form the light emitting layer 7 in a stripe shape on the lower surface of the large substrate through the opening of the mask. The formation of the hole transport layer 6, the electron injection layer 8, the cathode 9 and the like is performed in substantially the same manner.

(Mask structure)
FIG. 2 is a schematic perspective view of a mask to which the present invention is applied. FIG. 3 is an explanatory diagram of a support substrate used for a mask to which the present invention is applied.

  A mask 10 shown in FIG. 2 is a mask used for mask vapor deposition, and has a configuration in which a plurality of chips 20 are attached to a support substrate 30 that forms a base substrate. Such a mask 1 is used with the chip 20 facing the substrate to be processed when performing mask vapor deposition. The chip 20 can be formed of a metal material (for example, stainless steel, invar, 42 alloy, nickel alloy, etc.), glass, ceramics, silicon, etc. In this embodiment, the chip 20 is formed of a silicon substrate. Each of the plurality of chips 20 is aligned and bonded to the support substrate 30 by anodic bonding or an adhesive. In this embodiment, each chip 20 is an epoxy adhesive, an acrylic adhesive, a silicone adhesive, or rubber. Bonded with an adhesive such as a system adhesive.

  In the support substrate 30, a plurality of opening regions 32 each having a rectangular through hole are provided in parallel and at regular intervals, and a plurality of long hole-shaped openings 22 are provided in parallel at regular intervals. The plurality of chips 20 are fixed on the support substrate 30 so as to close the opening region 32 of the support substrate 30.

  The opening 22 of the chip 20 has a shape corresponding to the film formation pattern for the film formation surface of the substrate to be processed. Note that the mask 10 may have either a configuration having the same size as the deposition region for the substrate to be processed or a configuration having a size smaller than the deposition region. In the latter case, after forming a film in a predetermined region of the film formation region using the mask 10, the film is formed a plurality of times while shifting the mask 10, thereby forming the film over the entire film formation region. Do. In the latter case, film formation may be performed on the entire film formation region using a plurality of masks 10.

  In this embodiment, the chip 20 penetrates a single crystal silicon wafer having a plane orientation (100) or a single crystal silicon wafer having a plane orientation (110) by using a photolithography technique, wet etching, dry etching, or the like. It is manufactured by forming the opening 22 formed of a groove. At least two alignment marks 24 are formed on each of the plurality of chips 20, and these alignment marks 24 are used for alignment when the chips 20 are fixed to the support substrate 30. The alignment mark 24 is formed by a photolithography technique or crystal anisotropic etching. In order to manufacture such a chip 20, for example, a silicon wafer having a plane orientation (110) is prepared, and is formed on the surface of the silicon wafer of a silicon oxide film serving as an etching resistant mask material by thermal oxidation, and then photolithography. Using the technique, the silicon oxide film is patterned to form an etching resistant mask material. Next, crystal anisotropic etching is performed on a silicon wafer using an alkaline aqueous solution using an organic hydroxide such as tetramethylaluminum oxide or an inorganic hydroxide such as potassium hydroxide or sodium hydroxide. Then, an opening 22 made of a through groove is formed. Thereafter, the silicon oxide film is removed using a buffered hydrofluoric acid solution, and the chip 20 is formed. Further, the alignment mark 24 is formed by a similar method.

  The constituent material of the support substrate 30 preferably has the same or close thermal expansion coefficient as that of the constituent material of the chip 20. In this embodiment, since the chip 20 is made of silicon, the support substrate 30 is made of a glass material having the same or close thermal expansion coefficient as that of silicon. By doing in this way, generation | occurrence | production of the "distortion" or "stagnation" by the difference in the thermal expansion amount of the support substrate 30 and the chip | tip 20 can be suppressed. In this embodiment, as the support substrate 30, a plate glass made of alkali-free glass, borosilicate glass, soda glass, quartz glass, or the like is used.

(Configuration of support substrate alignment mark)
As shown in FIGS. 2 and 3A, the support substrate 30 is formed with, for example, first alignment marks 33 on a diagonal line. The first alignment mark 33 is for aligning the mask 10 when vapor deposition or the like is performed using the mask 10. Note that the first alignment mark 33 may be formed on the chip 20. In addition to the first alignment mark 33, the support substrate 30 has a second alignment mark 34 that is aligned with the alignment mark 24 on the chip 20 side when the chip 20 is bonded to the support substrate 30. 32 is formed around.

  In this embodiment, as shown in FIG. 3B, the alignment marks 33 and 34 are modified portions in which the refractive index of the glass is partially changed at a midway position in the thickness direction of the support substrate 30. It is constituted by a modified portion formed by generating voids or a modified portion formed by crystal precipitation. In this embodiment, the alignment marks 33 and 34 are formed at a depth of 10 μm or more and 100 μm or less from the surface of the support substrate 30 on which the chip 20 is bonded.

(Support substrate alignment mark formation method and mask manufacturing method)
FIG. 4 is a process diagram showing a method of manufacturing a mask to which the present invention is applied and a method of manufacturing a mask using a regenerated support substrate. FIG. 5 is an explanatory view schematically showing a process of forming alignment marks on the support substrate in the mask manufacturing process according to the first embodiment of the present invention. c) is a schematic configuration diagram of the alignment mark forming apparatus, an explanatory diagram showing a state in which the laser beam is focused on the middle position in the thickness direction of the support substrate, and a laser beam focusing position on the support substrate is moved. It is explanatory drawing which shows a mode to make it do.

  In order to manufacture the mask 10 described with reference to FIGS. 2 and 3, first, the chip 20 shown in FIG. 2 is formed, while the support substrate 30 in which the opening region 32 is formed as shown in FIG. An alignment mark forming step ST10 for forming alignment marks on the substrate and a chip bonding step ST20 (chip fixing step) for bonding a plurality of chips 20 to the support substrate 30 are performed. In order to form the opening region 32 with respect to the support substrate 30, after cutting the sheet glass into a predetermined shape, the sheet glass is subjected to a blasting process, or a wet etching technique using a photolithography technique and hydrofluoric acid. The process which combined is performed.

  Next, in alignment mark formation step ST10 shown in FIG. 4, alignment marks 33 and 34 are formed on support substrate 30 using alignment mark forming apparatus 50A shown in FIG. The alignment mark forming apparatus 50A includes a laser apparatus 51A, an XY stage 54A that holds the support substrate 30, and an optical system 55A that guides the laser light emitted from the laser apparatus 51A while condensing the laser light on the support substrate 30. The optical system 55A includes a mirror 52A that guides the laser light emitted from the laser device 51A to the support substrate 30, and an objective lens 53 that condenses the laser light on the support substrate 30 (magnification 100 times, numerical aperture 0.8). And a beam shaping optical element (not shown) for adjusting the beam shape of the laser beam emitted from the laser device 51A.

  In this embodiment, the laser device 51A is a femtosecond laser device, and emits femtosecond laser light having a wavelength of 800 nm and a pulse width of 100 fs.

  In order to form, for example, square alignment marks 33 and 34 each having a side of 150 μm on the support substrate 30 using such an alignment mark forming apparatus 50A, the support substrate 30 is first placed on the XY stage 54A. The laser device 51A irradiates the laser beam once to a predetermined place on the support substrate 30 (this operation is hereinafter referred to as “one shot”). At this time, as shown in FIG. 5B, the laser beam is collected at a midpoint in the thickness direction of the support substrate 30 by setting the focal position of the laser beam at a midpoint in the thickness direction of the support substrate 30. Light is applied to form a modified portion 39 in which the refractive index of the glass is partially changed, a modified portion 39 formed by generating microvoids, or a modified portion 39 in which crystals are precipitated. Here, the modified portion 39 is formed at a position where the depth d from the surface of the support substrate 30 is 10 μm or more and 100 μm or less. Further, the modified portion 39 has a spot shape with a diameter of 1 μm, as shown in FIG. In FIG. 5 (c), for convenience, the reformed portion 39 is represented by a circle and the reformed portion 39 is enlarged, but the shape of the reformed portion 39 is more precisely a square. It is close to a circle.

  In this embodiment, as will be described below, the shape accuracy of the alignment marks 33 and 34 is increased by setting the overlap ratio of the modified portion 39 to 75%. That is, after one shot is made from the laser device 51A to the support substrate 30, the XY stage 54A is moved by 0.25 μm in the + x direction to make one shot. This operation is repeated until the movement distance in the x direction of the XY stage 54A reaches 150 μm. As a result, when the position of the reformed portion 39 formed first is the origin, a plurality of the reformed portions 39 are formed on the support substrate 30 at intervals of 0.25 μm in the −x direction from the origin. . Next, the XY stage 54A is moved by 0.25 μm in the −y direction to make one shot. Further, the XY stage 54A is moved by 0.25 μm in the −x direction to make one shot. Then, by repeating this operation until the movement distance of the XY stage 54A in the −x direction becomes 150 μm, the modified portion 39 is located at a position shifted by 0.25 μm from the origin in the y direction and at an interval of 0.25 μm in the + x direction. Are formed. Next, the XY stage 54A is moved by 0.25 μm in the −y direction to make one shot.

  Thereafter, by repeating the above-described operation, one square alignment mark 33 and 34 each having a side of 150 μm is formed by a plurality of modified portions 39 at a midpoint in the thickness direction of the support substrate 30. Thereafter, the above steps are repeated to form alignment marks 33 and 34 at predetermined positions on the support substrate 30, respectively.

  Next, in the chip bonding step ST20 shown in FIG. 4, the second alignment mark 34 of the support substrate 30 and the alignment mark 24 of the chip 20 are used to support and align the plurality of chips 20 respectively. It is fixed at a predetermined position on the substrate 30. In this embodiment, each chip 20 is fixed to a predetermined position on the support substrate 30 with an epoxy-based adhesive. In this way, the mask 10 is completed.

(How to play the mask)
After the mask 10 is manufactured in this manner, if a defect such as damage occurs in any of the plurality of chips 20 in the inspection process or due to use in the film forming process, the chip removal process shown in FIG. Etching is performed in ST30 to dissolve and remove all the plurality of chips 20. The etching performed here uses, for example, a 3% potassium hydroxide aqueous solution, and the liquid temperature is 80 ° C. Since the aqueous solution of potassium hydroxide has a higher dissolution rate with respect to silicon as compared with an aqueous solution of an organic hydroxide such as tetramethylaluminum oxide, the chip 20 can be dissolved in a short time.

  Next, in the adhesive removal step ST40 shown in FIG. 4, the adhesive adhered to the support substrate 30 is removed. Thereby, when the chip 20 is bonded to the support substrate 30 again, the chip 20 can be bonded smoothly and accurately. In this embodiment, since an epoxy adhesive is used, the support substrate 30 is immersed in a mixed solution of sulfuric acid and hydrogen peroxide solution to remove the adhesive.

  Next, in the chip bonding step ST20 shown in FIG. 4, a predetermined position on the support substrate 30 while aligning a new chip 20 with the alignment marks 24 and 34 with respect to the support substrate 30 from which the chip 20 has been removed. Secure to. Also at that time, each chip 20 is fixed to a predetermined position on the support substrate 30 with an epoxy adhesive. In this way, the mask 10 using the regenerated support substrate 30 is completed. When the chip removal step ST30 is performed, the alignment marks 33 and 34 are formed at intermediate positions in the thickness direction of the support substrate 30 and are not damaged. Therefore, the alignment marks 33 and 34 are provided on the support substrate 30. There is no need to re-form.

(Main effects of this form)
As described above, in this embodiment, in the mask 10 having the plurality of chips 20 and the support substrate 30 that holds the plurality of chips 20, the alignment marks 33 and 34 are formed on the support substrate 30. The alignment marks 33 and 34 are formed at intermediate positions in the thickness direction of the support substrate 30. For this reason, when a defect is found in any of the plurality of chips 20, when the plurality of chips 20 are removed from the support substrate 30 by etching and the support substrate 30 is recovered, the alignment marks 33 and 34 are supported without disappearing. The substrate 30 can be recovered. That is, since the alignment marks 33 and 34 are formed inside the support substrate 30, the alignment marks 33 and 34 are not exposed to the etching solution when the chip 20 is dissolved with an etching solution such as an aqueous potassium hydroxide solution. The marks 33 and 34 are not lost. Therefore, since the expensive support substrate 30 can be collected and reused to provide the mask 10 at a low cost, the film formation cost can be reduced.

  Further, since the alignment marks 33 and 34 are not exposed to the etching solution, the chip 20 can be dissolved and removed with an aqueous potassium hydroxide solution having a high dissolution rate with respect to silicon. Therefore, the support substrate 30 can be efficiently recovered as compared with the case where the chip 20 is dissolved and removed with an aqueous tetramethylaluminum oxide solution.

  Further, in this embodiment, the alignment marks 33 and 34 are formed at a depth of 10 μm or more and 100 μm or less from the surface of the support substrate 30. As described above, the alignment marks 33 and 34 are formed inside the support substrate 30. However, since the alignment marks 33 and 34 are formed near the surface of the support substrate 30, the alignment marks 33 and 34 can be recognized by a camera or the like. Easy. In addition, since the alignment marks 33 and 34 are formed with a certain depth from the surface of the support substrate 30, even if the support substrate 30 is damaged, the alignment marks 33 and 34 are damaged. Can be avoided.

  Furthermore, since the alignment marks 33 and 34 are formed inside the support substrate 30, even if the surface of the support substrate 30 is scratched and it becomes difficult to recognize the alignment marks 33 and 34, By polishing the vicinity of the surface on which the marks are formed, the scratches can be erased, while the alignment marks 33 and 34 remain as they are. Therefore, the support substrate 30 can continue to be used unless a fatal damage such as the entire breakage occurs.

  Furthermore, in this embodiment, when the repetition rate of the femtosecond laser light emitted from the laser device 51A is 10 kHz, 10,000 shots can be performed on the support substrate 30 per second. Since the size of the alignment marks 33 and 34 in this embodiment is a square having a side of 150 μm and one shot is made every 0.25 μm, 600 shots (= 150 ÷ 0. 25) To complete one alignment mark 33, 34, 360,000 shots may be performed. Accordingly, the time required to complete one alignment mark 33, 34 is one minute or less. As described above, in the manufacturing method of the mask 10 of this embodiment, the alignment marks 33 and 34 can be formed in a very short time as compared with the case where the alignment marks 33 and 34 are formed by wet etching. Manufacturing time can be shortened.

[Embodiment 2]
FIG. 6 is an explanatory view schematically showing a process of forming alignment marks on the support substrate in the mask manufacturing process according to the second embodiment of the present invention. c) is a schematic configuration diagram of the alignment mark forming apparatus, an explanatory diagram showing a state in which the laser beam is focused on the middle position in the thickness direction of the support substrate, and a laser beam focusing position on the support substrate is moved. It is explanatory drawing which shows a mode to make it do. The basic configuration of the present embodiment is the same as that of the first embodiment, and therefore, common portions will be described with the same reference numerals.

  In the first embodiment, the femtosecond laser device (laser device 51A) and the XY stage 54A are used to form the alignment marks 33 and 34 on the support substrate 30. As shown in FIG. In the alignment mark forming apparatus 50B of the embodiment, first, a YAG laser apparatus is used as the laser apparatus 51B. The YAG laser apparatus emits laser light having a wavelength of 1064 nm and a pulse width of 10 μs. In the alignment mark forming apparatus 50B of the present embodiment, the optical system 55B that guides the laser light emitted from the laser apparatus 51B while condensing the laser light on the support substrate 30 is an objective lens 53, a beam shaping optical element (not shown), or the like. And an optical scanning device 56B provided with a galvano mirror 52B for the purpose of moving the condensing position of the laser light on the support substrate 30. For this reason, the support substrate 30 is placed on the fixed stage 54B, and the condensing position of the laser light on the support substrate 30 continuously moves as the galvano mirror 52B rotates in the optical scanning device 56B. .

  Also in this embodiment, as shown in FIG. 6B, the focal position of the laser beam is set at a midway position in the thickness direction of the support substrate 30. For this reason, at a midpoint in the thickness direction of the support substrate 30, a modified portion 39 in which the refractive index of the glass is partially changed by condensing laser light, a modified portion 39 formed by generating microvoids, Alternatively, a modified portion 39 formed by precipitation of crystals is formed. Further, as shown in FIG. 6C, a plurality of modified portions 39 of glass are continuously formed to form alignment marks 33 and 34 having predetermined shapes at intermediate positions in the thickness direction of the support substrate 30. can do. Also in this embodiment, the alignment marks 33 and 34 are formed at positions where the depth d from the surface of the support substrate 30 is 10 μm or more and 100 μm or less.

  Even when the mask 10 is configured using the support substrate 30 on which the alignment marks 33 and 34 are formed in this way, the alignment marks 33 and 34 are formed inside the support substrate 30, so The same effects as those of the first embodiment can be obtained, for example, that the alignment marks 33 and 34 are not lost when the plurality of chips 20 are removed from the support substrate 30 by etching when a defect is found. In this embodiment, since the YAG laser device is used as the laser device 51B, the alignment marks 33 and 34 can be formed more efficiently than in the first embodiment, and the manufacturing time of the mask 10 can be shortened.

[Other embodiments]
In the first embodiment, a femtosecond laser device is used as the laser device 51A, and the support substrate 30 is moved to change the condensing position of the laser beam on the support substrate 30, but as in the second embodiment, The laser beam may be moved to change the condensing position of the laser beam on the support substrate 30. In the second embodiment, a YAG laser device is used as the laser device 51B, and the laser light is moved to change the condensing position of the laser light on the support substrate 30, but as in the first embodiment. Alternatively, the converging position of the laser beam on the support substrate 30 may be changed by moving the support substrate 30.

  In the above embodiment, the mask used for vacuum deposition has been described as an example. However, the mask used for sputtering, ioprating, other physical vapor deposition, or chemical vapor deposition such as CVD is used. The present invention may be applied to a mask to be used.

It is principal part sectional drawing which shows an example of the organic electroluminescent apparatus to which this invention is applied. It is a perspective view of the mask to which this invention is applied. It is explanatory drawing of the support substrate used for the mask to which this invention is applied. It is process drawing which shows the manufacturing method of the mask to which this invention is applied, and the method of manufacturing a mask using the reproduced | regenerated support substrate. It is explanatory drawing which shows typically the manufacturing method of the mask which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows typically the manufacturing method of the mask which concerns on Embodiment 2 of this invention.

Explanation of symbols

10..Mask, 20..Chip, 30..Support substrate, 33, 34..Alignment mark, 39..Modified portion of glass, 50A, 50B..Alignment mark forming device, 51A, 51B..Laser device

Claims (7)

In a mask having a plurality of chips in which openings corresponding to a pattern to be formed on a substrate to be processed are formed, and a support substrate that holds the plurality of chips,
An alignment mark is formed on the support substrate at an intermediate position in the thickness direction. The support substrate is made of sheet glass,
The mask according to claim 1, wherein the alignment mark is formed by a modified portion of the plate glass.   The mask according to claim 2, wherein the alignment mark is formed at a position having a depth of 10 μm or more and 100 μm or less from the surface of the support substrate. In a mask manufacturing method having a plurality of chips in which openings corresponding to a pattern to be formed on a substrate to be processed are formed, and a support substrate that holds the plurality of chips,
Using plate glass as the support substrate,
An alignment mark forming step of condensing a laser beam at an intermediate position in the thickness direction of the plate glass and forming an alignment mark at an intermediate position in the thickness direction of the support substrate by a modified portion of the glass by the laser beam When,
A chip fixing step of fixing the plurality of chips to the support substrate;
A method for manufacturing a mask, comprising:   The mask manufacturing method according to claim 4, wherein the laser beam is a femtosecond laser.   The mask manufacturing method according to claim 4, wherein the laser beam is a YAG laser. After the chip fixing step,
Performing a chip removal step of removing the plurality of chips from the support substrate by etching when a defect is found in any of the plurality of chips;
The mask manufacturing method according to claim 4, wherein another chip is fixed to the support substrate from which the plurality of chips have been removed in the chip removal step.

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