CN115142012B

CN115142012B - Mask and method for manufacturing the same

Info

Publication number: CN115142012B
Application number: CN202210852845.8A
Authority: CN
Inventors: 广户荣仁
Original assignee: Dai Nippon Printing Co Ltd
Current assignee: Dai Nippon Printing Co Ltd
Priority date: 2018-07-03
Filing date: 2019-07-03
Publication date: 2023-12-29
Anticipated expiration: 2039-07-03
Also published as: KR102631580B1; CN110670015B; JP6997975B2; CN210394497U; JP2022037147A; CN115142012A; JPWO2020009088A1; TW202006794A; CN110670015A; TWI781328B; WO2020009088A1; KR20210025633A

Abstract

The present invention relates to a mask and a method for manufacturing the same, wherein the mask comprises: a 1 st mask including an opening, a 2 nd mask located at the opening of the 1 st mask, and a joint portion joining the 1 st mask and the 2 nd mask. The 1 st mask has: a 1 st surface, a 2 nd surface positioned on the opposite side of the 1 st surface, and a side surface extending from the 1 st surface to the 2 nd surface and defining an opening. The 2 nd mask includes a 3 rd surface located on the 1 st surface side of the 1 st mask and a 4 th surface located on the 2 nd surface side of the 1 st mask. In addition, the 2 nd mask has: comprises an effective region of the 1 st hole penetrating through the 2 nd mask and a peripheral region located at the periphery of the effective region. The joint part has: a 1 st part including at least a side surface portion in contact with a side surface of the 1 st mask and a 1 st surface portion in contact with a 1 st surface of the 1 st mask, and a 2 nd part including at least a 4 th surface portion in contact with a 4 th surface of a peripheral region of the 2 nd mask.

Description

Mask and method for manufacturing the same

The present application is a divisional application, the application number of the original application is 201910593177.X, the application date is 2019, 07 and 03, and the name is "mask and manufacturing method thereof".

Technical Field

Embodiments of the present disclosure relate to masks and methods of manufacturing the same.

Background

In recent years, high definition, for example, a pixel density of 400ppi or more is demanded for display devices used in portable devices such as smartphones and tablet computers. In addition, the demand for Ultra High Definition (UHD) in portable devices is also increasing, and in this case, the pixel density of the display device is required to be, for example, 800ppi or more.

Among display devices, organic EL display devices are attracting attention because of their good responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, a method of forming pixels in a desired pattern using a mask having through holes arranged in a desired pattern is known. Specifically, first, a mask is combined on a substrate for an organic EL display device. Next, a vapor deposition material containing an organic material is attached to the substrate through the through-holes of the mask. By performing such a vapor deposition step, pixels including an organic material can be formed on the substrate in a pattern corresponding to the pattern of the through holes of the mask.

In order to precisely manufacture an organic EL display device having a high pixel density, the thickness of the mask is preferably small. On the other hand, when the thickness of the mask is reduced, the rigidity of the mask is lowered, and undulation such as wrinkles are easily generated in the mask. If the flatness of the mask is impaired due to waviness such as wrinkles, the position of the vapor deposition material attached to the substrate deviates from the design position. As a method for solving such a problem, for example, as disclosed in patent document 1, a method is known in which a mask body having 2 or more through holes formed therein is combined with a frame body having a thickness larger than that of the mask body and joined to the mask body. Patent document 1 proposes a method of combining a mask body and a frame body, in which the mask body and the frame body are joined by a metal layer formed by an electroforming method.

Prior art literature

Patent literature

Patent document 1: japanese patent laid-open No. 2003-68454

Disclosure of Invention

It is believed that: when an external force is applied to the mask body or the frame body, the metal layer is separated from the mask body or the frame body.

An object of an embodiment of the present disclosure is to provide a mask and a method of manufacturing the same, which can effectively solve such problems.

A 1 st aspect of the present disclosure relates to a mask, including: a 1 st mask including an opening having a 1 st surface, a 2 nd surface located on the opposite side of the 1 st surface, and a side surface extending from the 1 st surface to the 2 nd surface and defining the opening; a 2 nd mask located in the opening of the 1 st mask, including a 3 rd surface located on the 1 st surface side of the 1 st mask and a 4 th surface located on the 2 nd surface side of the 1 st mask, and having an effective region including a 1 st hole penetrating the 2 nd mask and a peripheral region located on a periphery of the effective region; and a bonding portion which bonds the 1 st mask to the 2 nd mask, the bonding portion having a 1 st portion and a 2 nd portion, the 1 st portion including at least a side portion which contacts the side surface of the 1 st mask and a 1 st surface portion which contacts the 1 st surface of the 1 st mask, the 2 nd portion including at least a 4 th surface portion which contacts the 4 th surface of the peripheral region of the 2 nd mask.

In a 2 nd aspect of the present disclosure, in the mask of the 1 st aspect, the 3 rd surface of the 2 nd mask and the 1 st surface portion of the 1 st portion of the joint may be on the same plane.

In a 3 rd aspect of the present disclosure, in the mask according to the 1 st aspect or the 2 nd aspect, the width of the 1 st surface portion of the 1 st portion of the joint portion may be 3 μm or more.

In a 4 th aspect of the present disclosure, in the mask of each of the 1 st aspect to the 3 rd aspect, the 1 st portion of the joint portion may further include a 2 nd surface portion that contacts the 2 nd surface of the 1 st mask.

In a 5 th aspect of the present disclosure, in the mask of the 4 th aspect, a width of the 2 nd surface portion of the 1 st portion of the joint portion may be 3 μm or more.

In a 6 th aspect of the present disclosure, in the mask of each of the 1 st aspect to the 5 th aspect, the peripheral region of the 2 nd mask may include a 2 nd hole recessed from the 4 th surface side of the 2 nd mask toward the 3 rd surface side, and the 2 nd portion of the joint may further include a hole portion located inside the 2 nd hole of the peripheral region of the 2 nd mask.

In a 7 th aspect of the present disclosure, in the mask of the 6 th aspect, the 2 nd hole in the peripheral region of the 2 nd mask may penetrate from the 4 th surface side to the 3 rd surface side of the 2 nd mask.

In an 8 th aspect of the present disclosure, in the mask according to the 6 th or 7 th aspect, the 2 nd hole in the peripheral region of the 2 nd mask may have a size of 10 μm or more and 200 μm or less.

In a 9 th aspect of the present disclosure, in the mask of each of the 6 th to 8 th aspects, the shape of the 2 nd hole in the peripheral region of the 2 nd mask may have a circular shape or a rectangular shape when viewed in a normal direction of the 4 th surface of the 2 nd mask.

In a 10 th aspect of the present disclosure, in the mask of each of the 1 st to 9 th aspects, the side surface of the 1 st mask may have a protrusion protruding toward the 2 nd mask side located in the opening.

In an 11 th aspect of the present disclosure, in the mask of each of the 1 st aspect to the 10 th aspect, the side surface of the 1 st mask may include a rough surface having an arithmetic average roughness of 0.12 μm or more.

In a 12 th aspect of the present disclosure, in the mask of each of the 1 st aspect to the 11 th aspect, the thickness of the 1 st mask may be 250 μm or more and 1000 μm or less.

In a 13 th aspect of the present disclosure, in the mask of each of the 1 st aspect to the 12 th aspect, the thickness of the 2 nd mask may be 20 μm or less.

In a 14 th aspect of the present disclosure, in the mask of each of the 1 st to 13 th aspects, the joint portion may include a plating layer.

A 15 th aspect of the present disclosure relates to a method of manufacturing a mask, including: a 1 st mask preparation step of preparing a 1 st mask, wherein the 1 st mask includes an opening having a 1 st surface, a 2 nd surface located on the opposite side of the 1 st surface, and a side surface extending from the 1 st surface to the 2 nd surface and defining the opening; a 2 nd mask preparation step of preparing a 2 nd mask, the 2 nd mask being located at the opening of the 1 st mask, the 2 nd mask including a 3 rd surface located on the 1 st surface side of the 1 st mask and a 4 th surface located on the 2 nd surface side of the 1 st mask, the 2 nd mask having an effective region and a peripheral region located on a periphery of the effective region, the effective region including a 1 st hole penetrating through the 2 nd mask; and a junction forming step of forming a junction by plating, the junction having a 1 st portion and a 2 nd portion, the 1 st portion including at least a side portion in contact with the side surface of the 1 st mask and a 1 st surface portion in contact with the 1 st surface of the 1 st mask, and the 2 nd portion including at least a 4 th surface portion in contact with the 4 th surface of the 2 nd mask.

In accordance with a 16 th aspect of the present disclosure, in the method for manufacturing a mask according to the 15 th aspect, the step of forming the joint portion may include: forming a photosensitive layer on a substrate provided with the 2 nd mask, the photosensitive layer covering the 2 nd mask and the substrate; a step of disposing the 1 st mask on the photosensitive layer on the substrate so that the 2 nd mask is positioned at the opening of the 1 st mask; exposing and developing the photosensitive layer so that a portion of the photosensitive layer located on the effective region of the 2 nd mask is left, a portion of the photosensitive layer located on the peripheral region of the 2 nd mask is removed, and a portion of the photosensitive layer located between the 1 st mask and the substrate is partially removed; and a step of forming the joint portion by supplying a plating solution so that the plating solution contacts the side surface of the 1 st mask and the peripheral region of the 2 nd mask and the plating solution is immersed in a space between the 1 st mask and the substrate from which the photosensitive layer is removed.

In a 17 th aspect of the present disclosure, in the method for manufacturing a mask according to the 15 th or 16 th aspect, the 1 st mask preparation step may include: a step of preparing a plate member made of metal and including a 1 st surface and a 2 nd surface located on the opposite side of the 1 st surface; and a step of wet etching the plate member from the 1 st surface side and the 2 nd surface side to form the opening in the plate member.

In an 18 th aspect of the present disclosure, in the method for manufacturing a mask according to the 15 th aspect to the 17 th aspect, the 1 st mask preparation step may include a step of performing sandblasting on the side surface of the 1 st mask.

A 19 th aspect of the present disclosure may be the mask manufactured by the method for manufacturing a mask according to each of the 15 th to 18 th aspects described above.

According to the embodiments of the present disclosure, separation of the joint from the 1 st mask or the 2 nd mask can be suppressed.

Drawings

Fig. 1 is a diagram showing a vapor deposition apparatus including a mask apparatus according to an embodiment of the present disclosure.

Fig. 2 is a cross-sectional view showing an organic EL display device manufactured using the mask device shown in fig. 1.

Fig. 3 is a plan view showing a 1 st mask of the mask apparatus.

Fig. 4 is a plan view showing a 2 nd mask of the mask apparatus.

Fig. 5 is a plan view showing the 2 nd mask in enlargement.

Fig. 6 is a cross-sectional view of the 2 nd mask of fig. 5 as viewed along line VI-VI.

Fig. 7 is a plan view showing a case where a mask including the 1 st mask and the 2 nd mask is viewed from the 2 nd surface side.

Fig. 8 is a cross-sectional view of the mask of fig. 7, as viewed along line VIII-VIII.

Fig. 9 is a sectional view showing the mask of fig. 8 in an enlarged manner.

Fig. 10 is a diagram showing a 1 st mask preparation process for preparing a 1 st mask.

Fig. 11 is a diagram showing a 1 st mask preparation process for preparing a 1 st mask.

Fig. 12 is a diagram showing a 1 st mask preparation process for preparing a 1 st mask.

Fig. 13 is a diagram showing a 2 nd mask preparation process for preparing a 2 nd mask.

Fig. 14 is a diagram showing a 2 nd mask preparation process for preparing a 2 nd mask.

Fig. 15 is a diagram showing a 2 nd mask preparation process for preparing a 2 nd mask.

Fig. 16 is a diagram showing a joint formation step of forming a joint.

Fig. 17 is a diagram showing a joint formation step of forming a joint.

Fig. 18 is a diagram showing a joint formation step of forming a joint.

Fig. 19 is a diagram showing a joint formation step of forming a joint.

Fig. 20 is a diagram showing a case where an external force is applied to the mask of the 1 st surface portion of the 1 st portion having no joint.

Fig. 21 is a diagram showing a case where an external force is applied to a mask of an embodiment of the present disclosure.

Fig. 22 is a diagram showing a modification of the 2 nd mask preparation process.

Fig. 23 is a diagram showing a modification of the 2 nd mask preparation process.

Fig. 24 is a diagram showing a modification of the 2 nd mask preparation process.

Fig. 25 is a diagram showing a modification of the 2 nd mask preparation process.

Fig. 26 is a diagram showing a modification of the joint formation step.

Fig. 27 is a diagram showing a modification of the joint formation step.

Fig. 28 is a diagram showing a modification of the 1 st mask.

Fig. 29 is a diagram showing a modification of the mask.

Detailed Description

In the present specification and the present drawings, unless specifically stated otherwise, terms such as "plate", "sheet", "film" and the like are not to be distinguished from each other only by differences in terms of designation. For example, "plate" is a concept including a member which can be called a sheet or a film. The term "surface (sheet surface, film surface)" refers to a surface of a target plate-like member (sheet-like member, film-like member) that coincides with the planar direction when the target plate-like member (sheet-like member, film-like member) is viewed in general. The normal direction used for a plate-like (sheet-like or film-like) member refers to a normal direction to a surface (sheet surface or film surface) of the member. The terms such as "parallel", "orthogonal", and the like, values of length and angle, and the like, which are used in the present specification, are used to specify the shape, geometry, and the degree of the geometry, are not limited to strict meanings, and are explained in a range including a degree where the same function can be expected.

In the present specification and the drawings, the description will be made such that, unless otherwise specified, a certain component, a certain region, or the like is located "above (or below)", or "above (or below)" other components, and that, unless otherwise specified, it is to be interpreted as including not only a case where a certain component is directly in contact with another component, but also a case where another component is included between a certain component and another component. Unless otherwise specified, the description may be made using a term such as up (or upper side, upper side) or down (or lower side, lower side), but the vertical direction may be reversed.

In the present specification and the drawings, unless otherwise specified, the same parts or parts having the same functions are denoted by the same or similar symbols, and their repetitive description may be omitted. For convenience of explanation, the dimensional ratios in the drawings may be different from actual ratios, and some of the components may be omitted from the drawings.

In the present specification and the drawings, unless otherwise specified, the present invention may be combined with other embodiments and modifications insofar as no contradiction occurs. The other embodiments, other embodiments and modifications may be combined within a range where no contradiction occurs. The modifications may be combined in a range where no contradiction occurs.

In the present specification and the present drawings, unless otherwise specified, when 2 or more steps are disclosed in relation to a method such as a manufacturing method, other steps not disclosed may be performed between the disclosed steps. The order of the disclosed steps is arbitrary within a range where no contradiction occurs.

In the present specification and the present drawings, unless otherwise specified, the numerical range represented by the symbol "to" includes numerical values set before and after the symbol "to". For example, the numerical range expressed by the expression "34 to 38 mass%" is the same as the numerical range expressed by the expression "34 mass% or more and 38 mass% or less".

In this embodiment, an example of a vapor deposition mask used for patterning a vapor deposition material in a desired pattern on a substrate will be described. The vapor deposition mask is used, for example, to pattern an organic material in a desired pattern on a substrate in the production of an organic EL display device. However, the use of the mask of the present disclosure is not particularly limited, and the mask of the present disclosure may be used for various purposes. The mask of the present disclosure may be used, for example, as a metal mesh filter or a screen printing plate.

An embodiment of the present disclosure will be described in detail below with reference to the accompanying drawings. The embodiments described below are examples of embodiments of the present disclosure, and the present disclosure is not to be construed as being limited to only these embodiments.

First, a vapor deposition apparatus 90 that performs a vapor deposition process of vapor deposition of a vapor deposition material on an object will be described with reference to fig. 1. As shown in fig. 1, the vapor deposition apparatus 90 may include a vapor deposition source (e.g., a crucible 94), a heater 96, and the mask apparatus 10. The vapor deposition device 90 further includes an exhaust unit for forming a vacuum atmosphere inside the vapor deposition device 90. The crucible 94 accommodates a vapor deposition material 98 such as an organic light emitting material. The heater 96 heats the crucible 94, and evaporates the vapor deposition material 98 in a vacuum atmosphere. The mask device 10 may be disposed so as to face the crucible 94.

The mask device 10 will be described below. As shown in fig. 1, the mask apparatus 10 may include at least a mask 12 having a 1 st mask 20 and 2 or more 2 nd masks 30. The mask apparatus 10 may further include a frame 15 that supports the mask 12. The frame 15 may support the mask 12 in a state stretched in the plane direction thereof so that the mask 12 does not bend. Mask 12 may be secured to frame 15 by, for example, welding.

As shown in fig. 1, in the mask device 10, the mask 12 is disposed in the vapor deposition device 90 so as to face a substrate, that is, an object to which the vapor deposition material 98 is attached, such as an organic EL substrate 92. In the following description, the surface of the mask 12 on the side of the organic EL substrate 92 is referred to as the 1 st surface, and the surface on the opposite side of the 1 st surface, i.e., the vapor deposition source side, is referred to as the 2 nd surface. For example, in fig. 1, reference numeral 201 denotes the 1 st surface of the 1 st mask 20, and reference numeral 202 denotes the 2 nd surface of the 1 st mask 20. The surface of the 2 nd mask 30 is given a different name from the 1 st and 2 nd surfaces in order to distinguish it from the 1 st and 2 nd surfaces 201 and 202 of the 1 st mask 20. Specifically, the surface of the 2 nd mask 30 on the vapor deposition source side is referred to as the 3 rd surface, and the surface on the vapor deposition source side, which is the opposite side of the 3 rd surface, is referred to as the 4 th surface.

As shown in fig. 1, the mask device 10 may include a magnet 93 disposed on a surface of the organic EL substrate 92 opposite to the mask 12. By providing the magnet 93, the mask 12 can be attracted to the magnet 93 side by a magnetic force, and the mask 12 and the organic EL substrate 92 are brought into close contact. This suppresses occurrence of masking in the vapor deposition process, and improves the dimensional accuracy and positional accuracy of the vapor deposition material 98 adhering to the organic EL substrate 92. In addition, an electrostatic chuck using electrostatic force may be used to adhere the mask 12 to the organic EL substrate 92.

As shown in fig. 1, the 1 st mask 20 of the mask 12 has: the plate member 21 includes a 1 st surface 201, a 2 nd surface 202 located on the opposite side of the 1 st surface 201, and 2 or more openings 22 formed in the plate member 21. When the 1 st mask 20 and the 2 nd mask 30 are viewed along the normal direction of the 2 nd surface 202 of the 1 st mask 20, 2 or more 2 nd masks 30 are located in the openings 22 of the 1 st mask 20, respectively. The 2 nd mask 30 has 2 or more 1 st holes 32 penetrating the 2 nd mask 30.

In the vapor deposition apparatus 90 shown in fig. 1, the vapor deposition material 98 evaporated from the crucible 94 and reaching the mask apparatus 10 is attached to the organic EL substrate 92 through the opening 22 of the 1 st mask 20 and the 1 st hole 32 of the 2 nd mask 30. Thus, the vapor deposition material 98 can be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the positions of the opening 22 of the 1 st mask 20 and the 1 st hole 32 of the 2 nd mask 30.

Fig. 2 is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition device 90 of fig. 1. The organic EL display device 100 may include an organic EL substrate 92 and a vapor deposition layer 99 including a vapor deposition material 98 provided in a pattern. The vapor deposition layers 99 of 2 or more types included in 1 organic EL display device 100 are composed of vapor deposition materials that adhere to the organic EL substrate 92 through the 1 st holes 32 of 2 nd mask 30 located at one opening 22 of 1 st mask 20.

In the organic EL display device 100 of fig. 2, an electrode or the like for applying a voltage to the vapor deposition layer 99 is omitted. After the vapor deposition step of providing the vapor deposition layer 99 in a pattern on the organic EL substrate 92, other components of the organic EL display device may be further provided in the organic EL display device 100 of fig. 2. Accordingly, the organic EL display device 100 of fig. 2 may also be referred to as an intermediate of the organic EL display device.

In the case of performing color development based on 2 or more colors, vapor deposition devices 90 each having a mask device 10 corresponding to each color are prepared, and organic EL substrates 92 are sequentially put into each vapor deposition device 90. This allows, for example, an organic light-emitting material for red, an organic light-emitting material for green, and an organic light-emitting material for blue to be sequentially deposited on the organic EL substrate 92.

The vapor deposition treatment may be performed inside the vapor deposition device 90 in a high-temperature atmosphere. In this case, during the vapor deposition process, the 1 st mask 20, the 2 nd mask 30, the frame 15, and the organic EL substrate 92 held inside the vapor deposition device 90 are also heated. At this time, the 1 st mask 20, the 2 nd mask 30, the frame 15, and the organic EL substrate 92 exhibit a behavior of dimensional change based on the respective coefficients of thermal expansion. In this case, when the difference in thermal expansion coefficients between the 1 st mask 20, the 2 nd mask 30, the frame 15 and the organic EL substrate 92 is large, a positional shift occurs due to the difference in dimensional change between them, and as a result, the dimensional accuracy and the positional accuracy of the vapor deposition material adhering to the organic EL substrate 92 are reduced.

In order to solve such a problem, it is preferable that the thermal expansion coefficients of the 1 st mask 20, the 2 nd mask 30, and the frame 15 are equal to the thermal expansion coefficient of the organic EL substrate 92. For example, in the case of using a glass substrate as the organic EL substrate 92, an iron alloy containing nickel can be used as the main materials of the 1 st mask 20, the 2 nd mask 30, and the frame 15. For example, as a material of the plate member constituting the 1 st mask 20 and the 2 nd mask 30, an iron alloy containing nickel in an amount of 30 mass% or more and 54 mass% or less may be used. Specific examples of the nickel-containing ferroalloy include invar alloy materials containing 34 to 38 mass% of nickel, super invar alloy materials containing 30 to 34 mass% of nickel and cobalt, and low-thermal expansion fe—ni-based plating alloys containing 38 to 54 mass% of nickel.

In the vapor deposition process, when the temperatures of the 1 st mask 20, the 2 nd mask 30, the frame 15, and the organic EL substrate 92 are not high, it is not particularly necessary to set the thermal expansion coefficients of the 1 st mask 20, the 2 nd mask 30, and the frame 15 to values equal to the thermal expansion coefficients of the organic EL substrate 92. In this case, as the material constituting the 1 st mask 20 and the 2 nd mask 30, a material other than the above-described iron alloy may be used. For example, an iron alloy other than the above-described nickel-containing iron alloy, such as a chromium-containing iron alloy, may be used. As the chromium-containing iron alloy, for example, an iron alloy called a so-called stainless steel can be used. In addition, alloys other than iron alloys such as nickel or nickel-cobalt alloys may be used.

The 1 st mask 20 is described in detail below. Fig. 3 is a plan view showing the 1 st mask 20. As shown in fig. 3, 2 or more openings 22 of the 1 st mask 20 are arranged along the 1 st direction D1 and the 2 nd direction D2. The 1 st direction D1 and the 2 nd direction D2 are directions parallel to the plane direction of the plate member 21 of the 1 st mask 20. In the present embodiment, the 2 nd direction D2 is orthogonal to the 1 st direction D1.

One opening 22 of the 1 st mask 20 corresponds to a display region of one organic EL display device 100. By providing 2 or more openings 22 in one mask device 10, the organic EL display device 100 can be subjected to successive vapor deposition (multi-surface deposition).

The 2 nd mask 30 will be described in detail. Fig. 4 is a plan view showing 2 or more 2 nd masks 30. As shown in fig. 4, 2 or more 2 nd masks 30 are arranged at a pitch corresponding to 2 or more openings 22 of 1 st mask 20. One 2 nd mask 30 corresponds to a representation area of one organic EL display device 100.

Each 2 nd mask 30 includes a metal layer 31 and 2 or more 1 st holes 32 penetrating the metal layer 31. The metal layer 31 includes a plating layer formed by, for example, a plating process. In fig. 4, an example is shown in which 2 or more 1 st holes 32 are aligned in the 1 st direction D1 and the 2 nd direction D2 in the same manner as the 1 st mask 20, but the alignment direction of the 1 st holes 32 is not particularly limited. For example, 2 or more 1 st holes 32 may be arranged in a direction inclined with respect to the 1 st direction D1 and the 2 nd direction D2.

Fig. 5 is a plan view showing the 2 nd mask 30 in an enlarged manner. Fig. 6 is a cross-sectional view of the 2 nd mask 30 of fig. 5, as viewed along line VI-VI. The 2 nd mask 30 has: an effective region 36 including the above-described 2 or more 1 st holes 32, and a peripheral region 37 located at the periphery of the effective region 36. As shown in fig. 5, the outline of the effective region 36 has, for example, a nearly quadrangular shape in plan view, more precisely, a substantially rectangular shape in plan view. Although not shown, the effective region 36 may have contours of various shapes according to the shape of the display region of the organic EL substrate 92. For example, the outline of the active area 36 may have a circular shape. The peripheral region 37 is a region where a joint 40 to be described later is provided for joining the 1 st mask 20 and the 2 nd mask 30.

As shown in fig. 6, the 2 nd mask 30 includes a 3 rd surface 301 and a 4 th surface 302 located on the opposite side of the 3 rd surface 301. The 3 rd surface 301 is located on the 1 st surface 201 side of the 1 st mask 20, and the 4 th surface 302 is located on the 2 nd surface 202 side of the 1 st mask 20. That is, as in the case of the 1 st mask 20, the 3 rd surface 301 of the 2 nd mask 30 faces the organic EL substrate 92, and the 4 th surface 302 is located on the vapor deposition source side. Fig. 5 is a plan view showing the case where the 2 nd mask 30 is viewed from the 4 th surface 302 side.

As shown in fig. 5, the peripheral region 37 of the 2 nd mask 30 may include 2 or more 2 nd holes 33 recessed from the 4 th face 302 side to the 3 rd face 301 side of the 2 nd mask 30. The 2 nd hole 33 is a hole into which the joint 40 described later enters. By making the joint 40 enter the 2 nd hole 33, the contact area between the 2 nd mask 30 and the joint 40 can be increased.

In the example shown in fig. 6, the 2 nd hole 33 of the peripheral region 37 penetrates from the 4 th surface 302 side to the 3 rd surface 301 side of the 2 nd mask 30. However, as shown in a modified example described later, the 2 nd hole 33 may not penetrate the 3 rd surface 301 side.

The shape of the 1 st hole 32 in plan view will be described. The 1 st hole 32 has a shape corresponding to the vapor deposition layer 99 formed on the organic EL substrate 92 in plan view. For example, as shown in fig. 5, the shape of the 1 st hole 32 has a circular shape in a plan view. Although not shown, the 1 st hole 32 may have other shapes such as an ellipse and a polygon.

Next, the shape of the 2 nd hole 33 in a plan view will be described. As described above, the 2 nd hole 33 is a hole into which the joint 40 described later enters. The joint 40 includes a plating layer formed by a plating process as described later. The 2 nd hole 33 is preferably formed so that the plating solution easily enters the 2 nd hole 33 during the plating process. For example, in the in-plane direction of the 4 th face 302 of the 2 nd mask 30, the size S2 of the 2 nd hole 33 is preferably larger than the size S1 of the 1 st hole 32. Although not shown, the size S2 of the 2 nd hole 33 may be smaller than the size S1 of the 1 st hole 32. The size S2 of the 2 nd hole 33 may be the same as the size S1 of the 1 st hole 32.

The size S1 of the 1 st aperture 32 is determined based on the pixel density and the like of the organic EL substrate 92. The size S1 of the 1 st hole 32 is, for example, 10 μm or more and 60 μm or less. The dimensions, widths, lengths, thicknesses, and the like of the 1 st aperture 32 and other constituent elements of the mask 12 are calculated based on the sectional images of the mask 12 obtained using a scanning microscope unless otherwise specified.

The size S2 of the 2 nd hole 33 may be 10 μm or more, 20 μm or more, 30 μm or more, or 40 μm or more. By increasing the size S2 of the 2 nd hole 33, the plating solution easily intrudes into the 2 nd hole 33 at the time of the plating process for forming the joint 40. The size S2 of the 2 nd hole 33 may be 200 μm or less, 150 μm or less, 120 μm or less, or 100 μm or less. By decreasing the size S2 of the 2 nd hole 33, the number of the 2 nd holes 33 in the peripheral region 37 can be increased, and the contact area between the 2 nd mask 30 and the joint portion 40 can be increased.

The range of the dimension S2 of the 2 nd hole 33 may be determined by a combination of any one of the above-described 2 or more upper limit candidate values and any one of the above-described 2 or more lower limit candidate values. For example, the size S2 of the 2 nd hole 33 may be in the range of 10 μm to 200 μm, 20 μm to 150 μm, 30 μm to 120 μm, or 40 μm to 100 μm. The range of the size S2 of the 2 nd hole 33 may be determined by any two combinations of the above-described lower limit candidate values of 2 or more. For example, the size S2 of the 2 nd hole 33 may be in the range of 10 μm to 30 μm, 10 μm to 20 μm, 20 μm to 40 μm, or 20 μm to 30 μm. The range of the size S2 of the 2 nd hole 33 may be determined by any two combinations of the above-described upper limit candidate values of 2 or more. For example, the size S2 of the 2 nd hole 33 may be in the range of 100 μm to 150 μm, 100 μm to 120 μm, 120 μm to 200 μm, or 150 μm to 200 μm.

The shape of the 2 nd hole 33 in plan view may be a shape that easily suppresses separation of the joint 40 from the 2 nd hole 33 of the 2 nd mask 30 on the 4 th surface 302 side of the 2 nd mask 30. For example, the 2 nd hole 33 may include corners having an internal angle of less than 90 degrees. For example, the shape of the 2 nd hole 33 may have a triangle, a star, a parallelogram.

In the example shown in fig. 5, 2 or more, for example, 2 nd holes 33 are arranged in a direction from the boundary between the effective region 36 and the peripheral region 37 to the outer edge of the peripheral region 37. However, the arrangement method of the 2 nd holes 33 is not particularly limited. For example, there may be 1 2 nd hole 33 in a direction from the boundary between the effective region 36 and the peripheral region 37 to the outer edge of the peripheral region 37. In addition, 3 or more 2 nd holes 33 may be arranged in a direction from the boundary between the effective region 36 and the peripheral region 37 to the outer edge of the peripheral region 37.

Next, the shape of the 1 st hole 32 in the cross-sectional view will be described. As shown in fig. 6, the 1 st hole 32 may include a portion in which the dimension S1 increases from the 3 rd surface 301 side toward the 4 th surface 302 side. This suppresses the occurrence of masking in the vapor deposition step. The shape of the 1 st hole 32 in the cross-sectional view is not limited to the shape shown in fig. 6.

The shape of the 2 nd hole 33 in the cross-sectional view will be described next. In the example of fig. 6, the dimension S2 of the 2 nd hole 33 is the same on the 3 rd face 301 side and the 4 th face 302 side. Although not shown, the 2 nd hole 33 may include a portion in which the dimension S2 increases from the 3 rd surface 301 side toward the 4 th surface 302 side, similarly to the 1 st hole 32. In addition, although not shown, the 2 nd hole 33 may include a portion where the dimension S2 decreases from the 3 rd surface 301 side toward the 4 th surface 302 side. Thus, separation of the joint 40 from the 2 nd hole 33 of the 2 nd mask 30 is easily suppressed on the 4 th face 302 side of the 2 nd mask 30.

Next, a state in which the 1 st mask 20 and the 2 nd mask 30 are combined will be described. Fig. 7 is a plan view showing a case where the mask 12 including the 1 st mask 20 and the 2 nd mask 30 is viewed from the 2 nd surface 202 side. As shown in fig. 7, the mask 12 includes: a 1 st mask 20 including 2 or more openings 22, and 2 or more 2 nd masks 30 located in the 2 or more openings 22 of the 1 st mask 20, respectively. The mask 12 further includes a joint 40 for joining the 1 st mask 20 and the 2 nd mask 30.

Fig. 8 is a cross-sectional view of the mask 12 of fig. 7, as viewed along line VIII-VIII. As shown in fig. 8, the plate member 21 of the 1 st mask 20 has a side surface 203 extending from the 1 st surface 201 to the 2 nd surface 202. The opening 22 is defined by a side surface 203.

In fig. 8, symbol T10 denotes the thickness of the plate member 21 of the 1 st mask 20, and symbol T20 denotes the thickness of the metal layer 31 of the 2 nd mask 30.

The thickness T10 of the plate member 21 may be 200 μm or more, 300 μm or more, 400 μm or more, or 500 μm or more, for example. The thickness T10 of the plate member 21 may be 1000 μm or less, 800 μm or less, 700 μm or less, or 600 μm or less, for example. The range of the thickness T10 of the plate member 21 may be determined by a combination of any one of the above-described 2 or more lower limit candidate values and any one of the above-described 2 or more upper limit candidate values, and may be, for example, 200 μm or more and 1000 μm or less, 300 μm or more and 800 μm or less, 400 μm or more and 700 μm or less, 500 μm or more and 600 μm or less, or 500 μm or more and 800 μm or less. The range of the thickness T10 of the plate member 21 may be defined by any combination of two or more of the above-described lower limit candidate values of 2 or more, and may be, for example, 200 μm or more and 500 μm or less, 200 μm or more and 400 μm or less, 300 μm or more and 500 μm or less, or 300 μm or more and 400 μm or less. The range of the thickness T10 of the plate member 21 may be determined by any combination of two or more of the above-described upper limit candidate values of 2 or more, and may be 600 μm or more and 1000 μm or less, 600 μm or more and 800 μm or less, 700 μm or more and 1000 μm or less, or 700 μm or more and 800 μm or less, for example.

The thickness T20 of the metal layer 31 may be, for example, 4 μm or more, 5 μm or more, 7 μm or more, or 10 μm or more. The thickness T20 of the metal layer 31 may be, for example, 20 μm or less, 18 μm or less, 15 μm or less, or 12 μm or less. The thickness T20 of the metal layer 31 may be determined by a combination of any one of the above-described 2 or more lower limit candidate values and any one of the above-described 2 or more upper limit candidate values, and may be, for example, 4 μm or more and 20 μm or less, 5 μm or more and 18 μm or less, 7 μm or more and 15 μm or less, or 10 μm or more and 12 μm or less. The range of the thickness T20 of the metal layer 31 may be determined by a combination of any two of the above-described lower limit candidate values of 2 or more, and may be, for example, 4 μm or more and 10 μm or less, 4 μm or more and 7 μm or less, 5 μm or more and 10 μm or less, or 5 μm or more and 7 μm or less. The range of the thickness T20 of the metal layer 31 may be determined by a combination of any two of the above-described upper limit candidate values of 2 or more, and may be, for example, 12 μm or more and 20 μm or less, 12 μm or more and 18 μm or less, 15 μm or more and 20 μm or less, or 15 μm or more and 18 μm or less.

As shown in fig. 8, the joint 40 has a 1 st portion 41 in contact with the 1 st mask 20 and a 2 nd portion 46 integrally formed with the 1 st portion 41 and in contact with the peripheral region 37 of the 2 nd mask 30.

The 1 st part 41 comprises at least a side part 42 and a 1 st part 43. The side surface portion 42 is a portion of the 1 st portion 41 that contacts the side surface 203 of the 1 st mask 20. The 1 st surface portion 43 is a portion of the 1 st portion 41 that contacts the 1 st surface 201 of the 1 st mask 20. The 1 st part 41 is in contact with the 1 st mask 20 on both the side surface 203 and the 1 st surface 201 of the 1 st mask 20, so that when a force from the outside is applied to the mask 12, the force generated between the 1 st mask 20 and the 1 st part 41 of the joint 40 can be dispersed in 2 or more directions. Thereby, separation of the 1 st portion 41 from the 1 st mask 20 can be suppressed. As shown in fig. 8, the 1 st portion 41 may further include a 2 nd surface portion 44 that contacts the 2 nd surface 202 of the 1 st mask 20.

The 2 nd portion 46 includes at least a 4 th face portion 47 that contacts the 4 th face 302 of the peripheral region 37 of the 2 nd mask 30. In addition, in the case where the 2 nd hole 33 is formed in the peripheral region 37, the 2 nd portion 46 may further include a hole portion 48 located inside the 2 nd hole 33. By including the hole portion 48 in the 2 nd portion 46, the contact area between the peripheral region 37 of the 2 nd mask 30 and the 2 nd portion 46 of the joint 40 can be increased. Thereby, separation of the 2 nd portion 46 from the peripheral region 37 of the 2 nd mask 30 can be suppressed.

Fig. 9 is a sectional view showing the mask 12 of fig. 8 in an enlarged manner. As shown in fig. 9, the side surface 203 of the 1 st mask 20 may have a protruding portion 203t protruding toward the 2 nd mask 30 side of the opening 22. As will be described later, such protruding portions 203t can be produced in a case where the plate member 21 is wet-etched from both the 1 st face 201 side and the 2 nd face 202 side to form the opening portions 22 in the plate member 21. By providing the side surface 203 of the 1 st mask 20 with such a protruding portion 203t, the contact area between the side surface portion 42 of the 1 st portion 41 of the joint 40 and the side surface 203 of the 1 st mask 20 can be increased as compared with the case where the side surface 203 is a flat surface. Thereby, separation of the 1 st portion 41 of the joint 40 from the side surface 203 of the 1 st mask 20 can be suppressed. In addition, the anchoring effect of the protruding portion 203t of the side surface 203 of the 1 st mask 20 with respect to the side surface portion 42 of the 1 st portion 41 of the joint 40 can be exerted to suppress separation of the 1 st portion 41 from the side surface 203 of the 1 st mask 20.

In fig. 9, symbol R1 indicates the protruding length of the protruding portion 203t of the side surface 203 with respect to the 1 st surface 201. The protruding length R1 of the protruding portion 203t may be, for example, 10 μm or more, 20 μm or more, 30 μm or more, or 40 μm or more. By increasing the protrusion length R1 of the protrusion 203t, the anchoring effect can be improved. The protruding length R1 of the protruding portion 203t may be 100 μm or less, 80 μm or less, 65 μm or less, or 50 μm or less.

The protruding length R1 of the protruding portion 203t may be defined by a combination of any one of the above-described 2 or more lower candidate values and any one of the above-described 2 or more upper candidate values, and may be, for example, 10 μm or more and 100 μm or less, 20 μm or more and 80 μm or less, 30 μm or more and 65 μm or less, or 40 μm or more and 50 μm or less. The protruding length R1 of the protruding portion 203t may be determined by a combination of any two of the above-described lower limit candidate values of 2 or more, and may be, for example, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, 20 μm or more and 40 μm or less, or 20 μm or more and 30 μm or less. The protruding length R1 of the protruding portion 203t may be determined by a combination of any two of the above-described upper limit candidate values of 2 or more, and may be, for example, 50 μm or more and 100 μm or less, 50 μm or more and 80 μm or less, 65 μm or more and 100 μm or less, 65 μm or more and 80 μm or less, or 80 μm or more and 100 μm or less.

As shown in fig. 9, the side surface 203 of the 1 st mask 20 preferably includes a rough surface 203s having irregularities. In this case, the side surface portion 42 of the 1 st portion 41 of the joint 40 can enter the irregularities of the rough surface 203s of the side surface 203, and therefore, the adhesion of the side surface portion 42 of the joint 40 to the side surface 203 of the 1 st mask 20 can be further improved. Thereby, separation of the 1 st portion 41 of the joint 40 from the side surface 203 of the 1 st mask 20 can be suppressed.

The surface roughness of the rough surface 203s of the side surface 203 is the arithmetic average roughness Sa. The arithmetic average roughness of the rough surface 203s was calculated by using a measuring instrument based on ISO 25178. The arithmetic average roughness of the rough surface 203s may be 0.12 μm or more, 0.14 μm or more, or 0.17 μm or more, or 0.19 μm or more. By increasing the arithmetic average roughness of the rough surface 203s of the side surface 203, the anchoring effect can be improved. The arithmetic average roughness of the rough surface 203s may be 0.28 μm or less, may be 0.25 μm or less, may be 0.23 μm or less, or may be 0.21 μm or less.

The range of the arithmetic average roughness of the rough surface 203s may be determined by a combination of any one of the above-mentioned 2 or more lower limit candidate values and any one of the above-mentioned 2 or more upper limit candidate values, and may be, for example, 0.12 μm or more and 0.28 μm or less, 0.14 μm or more and 0.25 μm or less, 0.17 μm or more and 0.23 μm or less, or 0.19 μm or more and 0.21 μm or less. The range of the arithmetic average roughness of the rough surface 203s may be determined by a combination of any two of the above-described lower limit candidate values of 2 or more, and may be, for example, 0.12 μm or more and 0.19 μm or less, 0.12 μm or more and 0.17 μm or less, 0.12 μm or more and 0.14 μm or less, 0.14 μm or more and 0.19 μm or less, or 0.14 μm or more and 0.17 μm or less. The range of the arithmetic average roughness of the rough surface 203s may be determined by a combination of any two of the above-mentioned upper limit candidate values of 2 or more, and may be, for example, 0.21 μm or more and 0.28 μm or less, 0.21 μm or more and 0.25 μm or less, 0.23 μm or more and 0.28 μm or less, 0.23 μm or more and 0.25 μm or less, or 0.25 μm or more and 0.28 μm or less.

In fig. 9, symbol T1 denotes the thickness of the side portion 42 of the 1 st portion 41 of the joint 40 located on the side 203 of the 1 st mask 20. In addition, the symbol T2 denotes the thickness of the 1 st surface portion 43 of the 1 st portion 41 of the joint 40 located on the 1 st surface 201 of the 1 st mask 20. In addition, symbol T3 denotes the thickness of the 2 nd surface portion 44 of the 1 st portion 41 of the joint 40 located on the 2 nd surface 202 of the 1 st mask 20.

The thickness T1 of the side surface portion 42 may be, for example, 20 μm or more, 30 μm or more, 40 μm or more, or 50 μm or more. The thickness T1 of the side surface portion 42 may be, for example, 110 μm or less, 90 μm or less, 70 μm or less, or 60 μm or less. The range of the thickness T1 of the side surface portion 42 may be determined by a combination of any one of the above-described 2 or more lower limit candidate values and any one of the above-described 2 or more upper limit candidate values, and may be, for example, 20 μm or more and 110 μm or less, 30 μm or more and 90 μm or less, 40 μm or more and 70 μm or less, 40 μm or more and 90 μm or less, or 50 μm or more and 60 μm or less. The range of the thickness T1 of the side surface portion 42 may be determined by a combination of any two of the above-described lower limit candidate values of 2 or more, and may be, for example, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 30 μm or more and 50 μm or less, or 30 μm or more and 40 μm or less. The range of the thickness T1 of the side surface portion 42 may be determined by any combination of two or more of the above-described upper limit candidate values of 2 or more, and may be, for example, 60 μm or more and 110 μm or less, 60 μm or more and 90 μm or less, 70 μm or more and 110 μm or less, or 70 μm or more and 90 μm or less.

The thickness T2 of the 1 st surface portion 43 may be, for example, 3 μm or more, 5 μm or more, 7 μm or more, or 10 μm or more. The thickness T2 of the 1 st surface portion 43 may be, for example, 30 μm or less, 25 μm or less, 20 μm or less, or 15 μm or less. The range of the thickness T2 of the 1 st surface portion 43 may be determined by a combination of any one of the above-described 2 or more lower limit candidate values and any one of the above-described 2 or more upper limit candidate values, and may be, for example, 3 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 7 μm or more and 20 μm or less, or 10 μm or more and 15 μm or less. The range of the thickness T2 of the 1 st surface portion 43 may be determined by a combination of any two of the above-described lower limit candidate values of 2 or more, and may be, for example, 3 μm or more and 10 μm or less, 3 μm or more and 7 μm or less, 5 μm or more and 10 μm or less, or 5 μm or more and 7 μm or less. The range of the thickness T2 of the 1 st surface portion 43 may be determined by any combination of two or more of the above-mentioned upper limit candidate values of 2 or more, and may be, for example, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, or may be 20 μm or more and 30 μm or less, or may be 20 μm or more and 25 μm or less.

The thickness T3 of the 2 nd surface portion 44 may be, for example, 30 μm or more, 40 μm or more, 50 μm or more, or 60 μm or more. The thickness T3 of the 2 nd surface portion 44 may be 150 μm or less, 120 μm or less, 90 μm or less, or 70 μm or less, for example. The range of the thickness T3 of the 2 nd surface portion 44 may be determined by a combination of any one of the above-described 2 or more lower limit candidate values and any one of the above-described 2 or more upper limit candidate values, and may be, for example, 30 μm to 150 μm, 40 μm to 120 μm, 50 μm to 90 μm, or 60 μm to 70 μm. The range of the thickness T3 of the 2 nd surface portion 44 may be determined by a combination of any two of the above-described lower limit candidate values of 2 or more, and may be, for example, 30 μm or more and 60 μm or less, 30 μm or more and 50 μm or less, 40 μm or more and 60 μm or less, or 40 μm or more and 50 μm or less. The range of the thickness T3 of the 2 nd face portion 44 may be determined by any combination of two or more of the above-described upper limit candidate values of 2 or more, and may be, for example, 70 μm or more and 150 μm or less, 70 μm or more and 120 μm or less, or may be 90 μm or more and 150 μm or less, or may be 90 μm or more and 120 μm or less.

The surface of the 1 st face portion 43 of the 1 st portion 41 of the joint 40 may be on the same plane as the 3 rd face 301 of the 2 nd mask 30. Such a surface of the 1 st surface portion 43 may be generated when the 1 st surface portion 43 is formed by immersing a plating solution between a substrate 65, which is a stage for manufacturing the 2 nd mask 30 by a plating process, and the 1 st surface 201 of the 1 st mask 20. The term "on the same plane" includes not only the case where the distance T4 between the surface of the 1 st surface portion 43 in the thickness direction of the 2 nd mask 30 and the 3 rd surface 301 of the 2 nd mask 30 is zero, but also the case where the distance T4 is 15 μm or less, 10 μm or less, or 5 μm or less.

In fig. 9, symbol T5 denotes the thickness of the 4 th face portion 47 of the 2 nd portion 46 of the joint 40 located on the 4 th face 302 of the 2 nd mask 30. The thickness T5 of the 4 th surface portion 47 may be, for example, 30 μm or more, 40 μm or more, 50 μm or more, or 60 μm or more. The thickness T5 of the 4 th surface portion 47 may be 150 μm or less, 120 μm or less, 90 μm or less, or 70 μm or less, for example. The range of the thickness T5 of the 4 th surface portion 47 may be determined by a combination of any one of the above-described 2 or more lower limit candidate values and any one of the above-described 2 or more upper limit candidate values, and may be, for example, 30 μm or more and 150 μm or less, 40 μm or more and 120 μm or less, 50 μm or more and 90 μm or less, or 60 μm or more and 70 μm or less. The range of the thickness T5 of the 4 th surface portion 47 may be determined by a combination of any two of the above-described lower limit candidate values of 2 or more, and may be, for example, 30 μm or more and 60 μm or less, 30 μm or more and 50 μm or less, 40 μm or more and 60 μm or less, or 40 μm or more and 50 μm or less. The range of the thickness T5 of the 4 th surface portion 47 may be determined by any combination of two or more of the above-described upper limit candidate values of 2 or more, and may be, for example, 70 μm or more and 150 μm or less, 70 μm or more and 120 μm or less, or may be 90 μm or more and 150 μm or less, or may be 90 μm or more and 120 μm or less. In addition, as shown in fig. 9, the 4 th surface portion 47 may include a portion where the thickness T5 increases as going from the 1 st mask 20 side toward the 2 nd mask 30 side.

In fig. 9, symbol W2 denotes the width of the 1 st surface portion 43 of the 1 st portion 41 of the joint 40. The width W2 of the 1 st surface portion 43 is a distance in the in-plane direction of the 1 st surface 201 of the 1 st mask 20 from the end of the 1 st surface 201 of the 1 st mask 20 on the opening 22 side to the end of the 1 st surface portion 43 of the 1 st portion 41 of the joint 40. The width W2 of the 1 st surface portion 43 may be 3 μm or more, may be 5 μm or more, may be 7 μm or more, or may be 10 μm or more. By increasing the width W2 of the 1 st surface portion 43, the adhesion of the 1 st portion 41 of the joint 40 to the 1 st mask 20 can be improved. The width W2 of the 1 st surface portion 43 may be 500 μm or less, 250 μm or less, 100 μm or less, or 30 μm or less.

The width W2 of the 1 st surface portion 43 may be determined by a combination of any one of the above-described 2 or more lower limit candidate values and any one of the above-described 2 or more upper limit candidate values, and may be, for example, 3 μm or more and 500 μm or less, may be 5 μm or more and 250 μm or less, may be 7 μm or more and 100 μm or less, or may be 10 μm or more and 30 μm or less. The width W2 of the 1 st surface portion 43 may be determined by a combination of any two of the above-described 2 or more lower limit candidate values, and may be, for example, 3 μm or more and 10 μm or less, 3 μm or more and 7 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 10 μm or less, or 5 μm or more and 7 μm or less. The width W2 of the 1 st surface portion 43 may be determined by a combination of any two of the above-described 2 or more upper limit candidate values, and may be, for example, 30 μm or more and 500 μm or less, 30 μm or more and 250 μm or less, 100 μm or more and 500 μm or less, 100 μm or more and 250 μm or more and 500 μm or less.

In fig. 9, symbol W3 denotes the width of the 2 nd surface portion 44 of the 1 st portion 41 of the joint 40. The width W3 of the 2 nd surface portion 44 is a distance in the in-plane direction of the 2 nd surface 202 of the 1 st mask 20 from the end of the 2 nd surface 202 of the 1 st mask 20 on the opening 22 side to the end of the 2 nd surface portion 44 of the 1 st portion 41 of the joint 40. The width W3 of the 2 nd surface portion 44 may be 3 μm or more, may be 5 μm or more, may be 7 μm or more, or may be 10 μm or more. By increasing the width W3 of the 2 nd surface portion 44, the adhesion of the 1 st portion 41 of the joint 40 to the 1 st mask 20 can be improved. The width W3 of the 2 nd surface portion 44 may be smaller than the width of the 2 nd surface 202, and may be, for example, 80 μm or smaller, 60 μm or smaller, 40 μm or smaller, or 20 μm or smaller.

The width W3 of the 2 nd surface portion 44 may be defined by a combination of any one of the above-described 2 or more lower limit candidate values and any one of the above-described 2 or more upper limit candidate values, and may be, for example, 3 μm or more and 80 μm or less, 5 μm or more and 60 μm or less, 7 μm or more and 40 μm or less, or 10 μm or more and 20 μm or less. The width W3 of the 2 nd surface portion 44 may be determined by a combination of any two of the above-described 2 or more lower candidate values, and may be, for example, 3 μm or more and 10 μm or less, 3 μm or more and 7 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 10 μm or less, or 5 μm or more and 7 μm or less. The width W3 of the 2 nd surface portion 44 may be determined by a combination of any two of the above-described 2 or more upper limit candidate values, and may be, for example, 20 μm or more and 80 μm or less, 20 μm or more and 60 μm or less, 40 μm or more and 80 μm or less, 40 μm or more and 60 μm or less, or 60 μm or more and 80 μm or less.

Next, a method of manufacturing the mask 12 will be described. The method of manufacturing the mask 12 includes: a 1 st mask preparation step of preparing the 1 st mask 20, a 2 nd mask preparation step of preparing the 2 nd mask 30, and a joint portion formation step of forming a joint portion 40 for joining the 1 st mask 20 and the 2 nd mask 30. The order of the 1 st mask preparation step and the 2 nd mask preparation step is arbitrary.

The 1 st mask preparation step will be described with reference to fig. 10 to 12.

First, a plate member 21 made of metal is prepared. The plate member 21 is made of, for example, an iron alloy containing nickel in an amount of 30 mass% or more and 38 mass% or less. Next, as shown in fig. 10, the 1 st surface resist pattern 50 is provided on the 1 st surface 201 of the plate member 21, and the 2 nd surface resist pattern 55 is provided on the 2 nd surface 202. The 1 st side resist pattern 50 includes a 1 st side resist layer 51 and an opening 52 formed in the 1 st side resist layer 51. The 2 nd resist pattern 55 similarly includes a 2 nd resist layer 56 and an opening 57. The openings 52 and 57 are located in the plate member 21 at the portions where the opening portions 22 are formed.

The 1 st surface resist layer 51 and the 2 nd surface resist layer 56 are obtained by, for example, attaching a dry film containing a photosensitive resist material such as an acrylic photocurable resin to the 1 st surface 201 and the 2 nd surface 202 of the plate member 21. The 1 st surface resist layer 51 and the 2 nd surface resist layer 56 can be obtained by applying a coating liquid containing a negative photosensitive resist material to the 1 st surface 201 and the 2 nd surface 202 of the plate member 21, and drying the coating liquid. The openings 52 and 57 are formed by exposing and developing the 1 st-side resist layer 51 and the 2 nd-side resist layer 56.

Next, the board member 21 is wet etched from the 1 st surface 201 side and the 2 nd surface 202 side using the 1 st surface resist pattern 50 and the 2 nd surface resist pattern 55 as masks. The recess formed on the 1 st surface 201 side and the recess formed on the 2 nd surface 202 side by wet etching are combined, so that the opening 22 can be formed in the plate member 21 as shown in fig. 11. In addition, a protruding portion 203t may be formed at a position where the recess on the 1 st surface 201 side and the recess on the 2 nd surface 202 side merge in the side surface 203 of the plate member 21.

Next, a blasting step of blasting the side surface 203 of the 1 st mask 20 may be performed. Thus, the rough surface 203s can be formed on the side surface 203 of the 1 st mask 20.

The blasting step may be performed in a state where the 1 st surface resist pattern 50 and the 2 nd surface resist pattern 55 are provided on the plate member 21. On the other hand, as shown in fig. 11, the 1 st surface resist pattern 50 protrudes toward the opening 22 side from the end of the 1 st surface 201, and the 2 nd surface resist pattern 55 protrudes toward the opening 22 side from the end of the 2 nd surface 202 in the same manner. Therefore, the arrival of the abrasive B such as sand to the side surface 203 of the 1 st mask 20 is hindered by the 1 st surface resist pattern 50 and the 2 nd surface resist pattern 55. In view of this, as shown in fig. 12, the blasting process may be performed in a state where the 1 st and 2 nd resist layers 53 and 58 different from the 1 st and 2 nd resist layers 51 and 56 used in wet etching are provided on the 1 st and 2 nd surfaces 201 and 202 of the plate member 21. The end 53e of the 1 st surface resist layer 53 does not protrude toward the opening 22 as compared with the protruding portion 203t of the side surface 203 of the 1 st mask 20. Similarly, the end portion 58e of the 2 nd resist layer 58 does not protrude toward the opening 22 side as compared with the protruding portion 203t of the side surface 203 of the 1 st mask 20. This can prevent the abrasive B such as sand from reaching the side surface 203 of the 1 st mask 20 and being blocked by the 1 st surface resist layer 53 and the 2 nd surface resist layer 58.

Next, the 2 nd mask preparation step will be described with reference to fig. 13 to 15.

First, a substrate 65 is prepared. At least the surface of the substrate 65 is preferably made of a material having conductivity. For example, the substrate 65 includes stainless steel or the like. Next, as shown in fig. 13, a 1 st resist pattern 60 is formed on the surface of the substrate 65. The 1 st resist pattern 60 has a 1 st resist layer 61, 2 or more 1 st openings 62 and 2 or more 2 nd openings 63 formed in the 1 st resist layer 61. The 1 st opening 62 is provided in a portion of the metal layer 31 of the substrate 65 where the active region 36 of the 2 nd mask 30 should be formed. In addition, the 2 nd opening 63 is provided in a portion of the substrate 65 where the metal layer 31 of the peripheral region 37 of the 2 nd mask 30 should be formed.

Next, as shown in fig. 14, a plating solution is supplied onto the substrate 65. Thus, the metal layer 31 composed of the plating layer generated by the electrolytic plating treatment can be formed in the 1 st opening 62 and the 2 nd opening 63 of the 1 st resist layer 61. The plating solution contains, for example, nickel sulfamate, nickel bromide, or the like. In addition, the plating solution may further contain ferrous sulfamate or the like. Thereafter, as shown in fig. 15, the 1 st resist pattern 60 is removed. Thus, the 2 nd mask 30 having 2 or more 1 st holes 32 and 2 nd holes 33 can be formed on the substrate 65.

Next, the joint formation step will be described with reference to fig. 16 to 19.

First, as shown in fig. 16, a photosensitive layer 71 is formed on a substrate 65 provided with a 2 nd mask 30 to cover the 2 nd mask 30 and the substrate 65. The photosensitive layer 71 can be obtained by attaching a dry film containing a photosensitive resist material to the substrate 65 in the same manner as the above-described 1 st-side resist layer 51. The photosensitive layer 71 may be obtained by applying a coating liquid containing a negative-type photosensitive resist material to the substrate 65 and drying the coating liquid.

Next, as shown in fig. 16, an exposure step is performed to irradiate light onto the portion of the photosensitive layer 71 located on the effective region 36 of the 2 nd mask 30. At this time, the light is not irradiated to the portion of the photosensitive layer 71 located on the peripheral region 37 of the 2 nd mask 30. In addition, the portion of the photosensitive layer 71 located on the substrate 65 around the 2 nd mask 30 is not irradiated with light. As shown in fig. 17, the 1 st mask 20 is disposed on the photosensitive layer 71 on the substrate 65 so that the 2 nd mask 30 is positioned at the opening 22 of the 1 st mask 20.

Next, a developing step of developing the photosensitive layer 71 is performed. Thereby, the portion of the photosensitive layer 71 located on the peripheral region 37 of the 2 nd mask 30 is removed. In addition, a portion of the photosensitive layer 71 located between the 1 st surface 201 of the 1 st mask 20 and the substrate 65 and in the vicinity of the side surface 203 of the 1 st mask 20 is removed. The developer does not reach or hardly reach the portion of the photosensitive layer 71 located between the 1 st surface 201 of the 1 st mask 20 and the substrate 65, which is away from the side surface 203 of the 1 st mask 20. Therefore, as shown in fig. 18, an unexposed photosensitive layer 71 remains between the 1 st surface 201 of the 1 st mask 20 and the substrate 65.

Next, as shown in fig. 19, a plating process is performed in which a plating solution is supplied onto the substrate 65 to form the joint 40. In the plating treatment step, the plating solution contacts the side surface 203 of the 1 st mask 20 and the peripheral region 37 of the 2 nd mask 30, and the plating solution is immersed in the space between the 1 st surface 201 of the 1 st mask 20 and the substrate 65 from which the photosensitive layer 71 is removed. The plating solution immersed in the space from which the photosensitive layer 71 is removed becomes the 1 st surface portion 43 of the 1 st portion 41 of the joint 40. The plating solution remaining on the 2 nd surface 202 of the plate member 21 becomes the 2 nd surface portion 44 of the 1 st portion 41 of the joint 40.

Although not shown, a resist layer may be provided on a portion of the 2 nd surface 202 of the plate member 21 where the 2 nd surface portion 44 is not to be formed, before the plating process is performed. Thereby, the width W3 of the 2 nd surface portion 44 formed on the 2 nd surface 202 of the plate member 21 can be controlled.

In this embodiment, the amount of the photosensitive layer 71 between the 1 st surface 201 of the 1 st mask 20 and the substrate 65 to be removed can be adjusted by adjusting the time of the developing step for developing the photosensitive layer 71 or the like. Thus, the width W2 of the 1 st surface portion 43 formed by the plating liquid immersed in the space from which the photosensitive layer 71 is removed can be adjusted.

Thereafter, the photosensitive layer 71 is removed. Further, the 1 st mask 20, the 2 nd mask 30, and the joint 40 are separated from the substrate 65. Thus, the mask 12 having the 1 st mask 20 and the 2 nd mask 30 and the joint 40 joining the 1 st mask 20 and the 2 nd mask 30 can be obtained.

The order of the exposure step of irradiating the portion of the photosensitive layer 71 located on the effective region 36 of the 2 nd mask 30 and the arrangement step of arranging the 1 st mask 20 on the photosensitive layer 71 is arbitrary. That is, the arrangement step may be performed after the exposure step, or the exposure step may be performed after the arrangement step.

Fig. 16 shows an example in which the photosensitive layer 71 is a photocurable type which is cured by light irradiation, but the invention is not limited thereto. The composition of the photosensitive layer 71 and the composition of the exposure step are arbitrary as long as the portion of the photosensitive layer 71 located on the effective region 36 of the 2 nd mask 30 is left, the portion of the photosensitive layer 71 located on the peripheral region 37 of the 2 nd mask 30 is removed, and the portion of the photosensitive layer 71 located between the 1 st mask 20 and the substrate 65 is partially removed in the subsequent development step.

Next, the effect of the mask 12 of the present embodiment will be described with reference to fig. 20 and 21. Fig. 20 is a diagram showing a case where an external force F is applied to a mask of a comparative method. Fig. 21 is a diagram showing a case where an external force F is applied to the mask 12 according to the present embodiment. The external force F is applied to the 3 rd surface 301 of the 2 nd mask 30, for example, in the thickness direction of the 2 nd mask 30. As shown in fig. 20, in the mask of the comparative method, the 1 st portion 41 of the joint 40 contacts only the side surface 203 of the 1 st mask 20, and does not contact the 1 st surface 201.

When an external force is applied to the 2 nd mask 30, a force is generated between the 1 st portion 41 of the joint 40 and the plate member 21 of the 1 st mask 20. In the example shown in fig. 20, the 1 st portion 41 of the joint 40 contacts only the side 203 of the 1 st mask 20, and thus a force F1 is generated only between the side portion 42 of the 1 st portion 41 and the side 203. In this case, when F1 exceeds the sealing force between the side surface portion 42 and the side surface 203 of the joint 40, the 1 st portion 41 is separated from the 1 st mask 20.

In contrast, in the present embodiment, the 1 st portion 41 of the joint 40 further includes the 1 st surface portion 43. Therefore, as shown in fig. 21, a force F1 is generated between the side surface portion 42 and the side surface 203 of the 1 st portion 41, and a force F2 is generated not only between the 1 st surface portion 43 of the 1 st portion 41 and the 1 st surface 201. That is, compared with the comparative method shown in fig. 20, the force generated between the 1 st portion 41 of the joint 40 and the plate member 21 of the 1 st mask 20 can be dispersed. This can suppress local concentration of force generated between the 1 st portion 41 of the joint 40 and the plate member 21 of the 1 st mask 20. So that separation of the 1 st portion 41 of the joint 40 from the 1 st mask 20 can be suppressed. In addition, the 1 st portion 41 of the joint 40 increases the contact area of the 1 st mask 20 by the 1 st surface portion 43. In this regard, the 1 st portion 41 can be suppressed from being separated from the 1 st mask 20.

Various modifications may be applied to the above-described embodiments. The following describes modifications as needed with reference to the drawings. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above-described embodiments are used for the parts that can be configured similarly to the above-described embodiments, and overlapping descriptions are omitted. It is to be noted that the operational effects obtained in the above-described embodiments are obviously obtained in the modification examples, and the description thereof may be omitted.

In the above embodiment, the example in which the plating layer contained in the metal layer 31 of the 2 nd mask 30 is 1 layer is shown, but the present invention is not limited thereto. The metal layer 31 may contain 2 or more plating layers. An example of a plating layer in which the metal layer 31 includes 2 layers will be described below with reference to fig. 22 to 27.

First, as shown in fig. 22, a 1 st resist pattern 60 is formed on the surface of a substrate 65. The 1 st resist pattern 60 includes a 1 st resist layer 61, and 2 st openings 62 and 2 nd openings 63 formed in 2 or more of the 1 st resist layer 61. The 1 st opening 62 is provided in the portion of the metal layer 31 of the substrate 65 where the effective region 36 of the 2 nd mask 30 should be formed, as in the case of the above-described embodiment shown in fig. 13. On the other hand, the 2 nd opening 63 extends to the entire area of the portion of the substrate 65 corresponding to the peripheral area 37 of the 2 nd mask 30.

Next, as shown in fig. 23, a plating solution is supplied onto the substrate 65. Thus, the 1 st plating layer 311 is formed in the 1 st opening 62 and the 2 nd opening 63 of the 1 st resist layer 61 by the electrolytic plating treatment.

Next, as shown in fig. 24, the 2 nd resist layer 66 is formed on the 1 st plating layer 311 formed in the 2 nd opening 63. The 2 nd resist layer 66 is formed with an opening 67. The 2 nd resist layer 66 is provided at a portion where the 2 nd hole 33 of the 2 nd mask 30 should be formed.

Next, as shown in fig. 25, a plating solution is supplied onto the substrate 65. Thus, the 2 nd plating layer 312 is formed by the electrolytic plating process in the 1 st opening 62 of the 1 st resist layer 61 and the opening 67 of the 2 nd resist layer 66. The composition of the 2 nd plating layer 312 may be the same as or different from the 1 st plating layer 311.

Next, the 1 st resist layer 61 and the 2 nd resist layer 66 are removed. Thus, as shown in fig. 26, the 2 nd mask 3 having the effective region 36 including 2 or more 1 st apertures 32 and the peripheral region 37 including 2 or more 2 nd apertures 33 can be obtained. The 1 st hole 32 of the effective region 36 penetrates the metal layer 31 including the 1 st plating layer 311 and the 2 nd plating layer 312. On the other hand, the 2 nd hole 33 of the peripheral region 37 penetrates the 2 nd plating layer 312 but does not penetrate the 1 st plating layer 311. That is, in the present modification, the 2 nd hole 33 of the peripheral region 37 is a recess portion located on the 4 th surface 302 side without penetrating the metal layer 31.

After the 2 nd mask 30 is manufactured, a junction forming step of forming the junction 40 is performed as in the case of the above-described embodiment. For example, after the step of forming the photosensitive layer 71 on the substrate 65, the step of exposing the photosensitive layer 71, the step of disposing the 1 st mask 20, and the step of developing the photosensitive layer 71 are performed, a plating solution is supplied onto the substrate 65 to form the joint portion 40, as shown in fig. 26. In this modification, the plating solution is immersed in the 2 nd hole 33 in the peripheral region 37 of the 2 nd mask 30, so that the adhesion between the joint 40 and the 2 nd mask 30 can be improved.

Thereafter, the photosensitive layer 71 is removed. Further, the 1 st mask 20, the 2 nd mask 30, and the joint 40 are separated from the substrate 65. As described above, as shown in fig. 27, the mask 12 including the 1 st mask 20 and the 2 nd mask 30 and the joint 40 joining the 1 st mask 20 and the 2 nd mask 30 can be obtained.

In the above embodiment, the example in which 1 number of members constituting the plate member 21 of the 1 st mask 20 is shown, but the present invention is not limited thereto. The plate member 21 may include 2 or more members laminated in the thickness direction. An example in which the plate member 21 includes 2 members joined by an adhesive layer will be described below with reference to fig. 28.

Fig. 28 is a cross-sectional view of the mask 12 according to this modification. The plate member 21 of the 1 st mask 20 has: a 1 st member 211 located on the 1 st surface 201 side, a 2 nd member 212 located on the 2 nd surface 202 side, and an adhesive layer 213 joining the 1 st member 211 and the 2 nd member 212. The adhesive layer 213 contains an adhesive resin. For example, the adhesive layer 213 includes an acrylic resin. The thickness of the adhesive layer 213 may be, for example, 3 μm or more, 5 μm or more, 7 μm or more, or 10 μm or more. The thickness of the adhesive layer 213 may be, for example, 40 μm or less, 30 μm or less, 20 μm or less, or 10 μm or less. The thickness of the adhesive layer 213 may be defined by a combination of any one of the above-described 2 or more lower candidate values and any one of the above-described 2 or more upper candidate values, and may be, for example, 3 μm or more and 40 μm or less, 5 μm or more and 30 μm or less, 7 μm or more and 20 μm or less, or 10 μm or more and 10 μm or less. The thickness of the adhesive layer 213 may be determined by a combination of any two of the above-mentioned lower limit candidate values of 2 or more, and may be, for example, 3 μm or more and 10 μm or less, 3 μm or more and 7 μm or less, 5 μm or more and 10 μm or less, or 5 μm or more and 7 μm or less. The thickness of the adhesive layer 213 may be determined by a combination of any two of the above-mentioned upper limit candidate values of 2 or more, and may be, for example, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 20 μm or more and 40 μm or less, or 20 μm or more and 30 μm or less.

The material of the 1 st member 211 may be the same as or different from the material of the 2 nd member 212. For example, the 1 st member 211 and the 2 nd member 212 each have an iron alloy containing 30 mass% or more and 38 mass% or less of nickel.

In this modification, the 1 st member 211 is wet etched from the 1 st surface side and the 2 nd surface side, and an opening is formed in the 1 st member 211. The 2 nd member 212 was wet etched from the 1 st surface side and the 2 nd surface side, and an opening was formed in the 2 nd member 212. Thereafter, the 1 st member 211 and the 2 nd member 212 are laminated so that the opening of the 1 st member 211 overlaps the opening of the 2 nd member 212. Thus, the 1 st mask 20 having the opening 22 formed therein can be obtained. The side 203 of the 1 st member 211 and the side 203 of the 2 nd member 212 each include a protrusion 203t.

According to the present modification, by configuring the plate member 21 of the 1 st mask 20 from 2 or more members, the time required for wet etching for forming the opening in the member can be shortened as compared with the case where the plate member 21 is configured from 1 member. This can reduce the amount of side corrosion occurring in the component, for example.

In the above embodiment, the example was shown in which the peripheral region 37 of the 2 nd mask 30 has the 2 nd hole 33 into which the joint 40 enters, but the present invention is not limited thereto. For example, as shown in fig. 29, the 2 nd hole 33 may not be formed in the peripheral region 37 of the 2 nd mask 30. Even in this case, the 2 nd portion 46 of the joint 40 includes the 4 th face portion 47 that is in contact with the 4 th face 302, and therefore separation of the 2 nd portion 46 from the peripheral region 37 of the 2 nd mask 30 can be suppressed. Further, since the 1 st portion 41 of the joint 40 includes the side surface portion 42 and the 1 st surface portion 43, a force generated between the 1 st portion 41 of the joint 40 and the plate member 21 of the 1 st mask 20 can be dispersed. This can suppress local concentration of the force generated between the 1 st portion 41 of the joint 40 and the plate member 21 of the 1 st mask 20, and can suppress separation of the 1 st portion 41 of the joint 40 from the 1 st mask 20. In addition, the 1 st portion 41 of the joint 40 increases the contact area of the 1 st mask 20 by the 1 st surface portion 43. In this regard, the 1 st portion 41 can be suppressed from being separated from the 1 st mask 20.

Although some modifications to the above-described embodiments have been described, it is needless to say that 2 or more modifications may be appropriately combined and applied.

Claims

1. A method for manufacturing an organic EL display device includes:

a step of disposing the mask so that the mask faces the organic EL substrate; and

a vapor deposition step of adhering a material to the substrate through the mask,

the mask is provided with:

a 1 st mask including an opening portion having a 1 st surface, a 2 nd surface located on the opposite side of the 1 st surface, and a side surface extending from the 1 st surface to the 2 nd surface and defining the opening portion;

a 2 nd mask located at the opening of the 1 st mask, including a 3 rd surface located on the 1 st surface side of the 1 st mask and a 4 th surface located on the 2 nd surface side of the 1 st mask, having an effective region including a 1 st hole penetrating the 2 nd mask and a peripheral region located at a periphery of the effective region; and

a joint portion joining the 1 st mask and the 2 nd mask, the joint portion having a 1 st portion and a 2 nd portion, the 1 st portion including at least a side portion in contact with the side surface of the 1 st mask and a 1 st surface portion in contact with the 1 st surface of the 1 st mask, the 2 nd portion including at least a 4 th surface portion in contact with the 4 th surface of the peripheral region of the 2 nd mask,

The joint includes a plating layer.

2. The method for manufacturing an organic EL display device according to claim 1, wherein the 3 rd surface of the 2 nd mask and a surface of the 1 st surface portion of the 1 st portion of the joint are on the same plane.

3. The method for manufacturing an organic EL display device according to claim 1 or 2, wherein a width of the 1 st surface portion of the 1 st portion of the joint is 3 μm or more.

4. The method for manufacturing an organic EL display device according to claim 1 or 2, wherein the 1 st portion of the bonding portion further includes a 2 nd surface portion in contact with the 2 nd surface of the 1 st mask.

5. The method for manufacturing an organic EL display device according to claim 4, wherein a width of the 2 nd surface portion of the 1 st portion of the joint is 3 μm or more.

6. The method for manufacturing an organic EL display device according to claim 1 or 2, wherein the peripheral region of the 2 nd mask includes a 2 nd hole recessed from the 4 th face side of the 2 nd mask toward the 3 rd face side,

the 2 nd portion of the joint further includes an aperture portion located inside the 2 nd aperture of the peripheral region of the 2 nd mask.

7. The method for manufacturing an organic EL display device according to claim 6, wherein the 2 nd hole of the peripheral region of the 2 nd mask penetrates from the 4 th surface side to the 3 rd surface side of the 2 nd mask.

8. The method for manufacturing an organic EL display device as claimed in claim 6, wherein the 2 nd hole of the peripheral region of the 2 nd mask has a size of 10 μm or more and 200 μm or less.

9. The method for manufacturing an organic EL display device according to claim 6, wherein the shape of the 2 nd hole of the peripheral region of the 2 nd mask has a circular shape or a rectangular shape when viewed along a normal direction of the 4 th face of the 2 nd mask.

10. The method for manufacturing an organic EL display device according to claim 1 or 2, wherein the side surface of the 1 st mask has a protruding portion protruding toward the 2 nd mask side located at the opening portion.

11. The method for manufacturing an organic EL display device according to claim 1 or 2, wherein the side surface of the 1 st mask includes a rough surface having an arithmetic average roughness of 0.12 μm or more.

12. The method for manufacturing an organic EL display device according to claim 1 or 2, wherein the 1 st mask has a thickness of 250 μm or more and 1000 μm or less.

13. The method for manufacturing an organic EL display device according to claim 1 or 2, wherein the thickness of the 2 nd mask is 20 μm or less.