JP5517308B2 - Mask manufacturing method, mask and mask manufacturing apparatus - Google Patents
Mask manufacturing method, mask and mask manufacturing apparatus Download PDFInfo
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- JP5517308B2 JP5517308B2 JP2011255298A JP2011255298A JP5517308B2 JP 5517308 B2 JP5517308 B2 JP 5517308B2 JP 2011255298 A JP2011255298 A JP 2011255298A JP 2011255298 A JP2011255298 A JP 2011255298A JP 5517308 B2 JP5517308 B2 JP 5517308B2
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Description
本発明は、基板上に一定形状の薄膜パターンを形成するためのマスクの製造方法に関し、特に目標とする薄膜パターンの形成領域に対応して高精細な複数の開口パターンの形成を容易に行い得るようにするマスクの製造方法、マスク及びマスクの製造装置に係るものである。 The present invention relates to a method of manufacturing a mask for forming a thin film pattern having a fixed shape on a substrate, and in particular, can easily form a plurality of high-definition opening patterns corresponding to a target thin film pattern formation region. The present invention relates to a mask manufacturing method , a mask, and a mask manufacturing apparatus.
従来のマスクの製造方法は、周縁部を除く内側部分に複数の貫通開口を有するレジストパターンを、金属板上に形成する工程と、レジストパターンの貫通開口を介してエッチング処理を行い、金属板に複数の貫通開口（開口パターン）を形成する工程と、レジストパターンを除去する工程と、貫通開口（開口パターン）の存在密度の高い金属板の内側部分を研磨して、貫通開口（開口パターン）の存在密度の高いマスク本体部とマスク本体部の周囲に位置するマスク本体部の厚さより大なる厚さを有する周縁部とを形成する工程と、を行うようになっていた（例えば、特許文献１参照）。 A conventional mask manufacturing method includes a step of forming a resist pattern having a plurality of through openings on an inner portion excluding a peripheral portion on a metal plate, and performing an etching process through the through openings of the resist pattern. A step of forming a plurality of through openings (opening patterns), a step of removing a resist pattern, and polishing an inner portion of a metal plate having a high density of through openings (opening patterns) to form through openings (opening patterns) Forming a mask main body portion having a high density and a peripheral portion having a thickness larger than the thickness of the mask main body portion located around the mask main body portion (for example, Patent Document 1). reference).
しかし、このような従来のマスクの製造方法において、一般に、数十μｍ〜数ｍｍの厚みの金属板に薄膜パターンに対応した貫通開口（開口パターン）を例えばエッチング等により形成してマスクが作られるので、貫通開口を高精度に形成することが困難であった。したがって、このようなメタルマスクを使用して例えば３００ｄｐｉ以上の高精細な薄膜パターンを形成することはできなかった。 However, in such a conventional mask manufacturing method, generally, a mask is made by forming a through-opening (opening pattern) corresponding to a thin film pattern, for example, by etching or the like on a metal plate having a thickness of several tens of μm to several mm. Therefore, it is difficult to form the through opening with high accuracy. Therefore, a high-definition thin film pattern of, for example, 300 dpi or more cannot be formed using such a metal mask.
特に、大型基板に対応したマスクの場合、貫通開口が細長いスリット状となるため、隣接する貫通開口間の部分のたわみやよじれ等により貫通開口の形状及び位置を精度よく維持することが困難であった。したがって、例えば大型のＴＦＴ基板を使用して有機ＥＬ表示装置を製造する際に、ＴＦＴ基板の画素間を正確にマスキングすることができないという問題があった。それ故、従来の方法で製造されるメタルマスクでは、画素ピッチを狭くして高精細化を図ることに限界があった。 In particular, in the case of a mask corresponding to a large substrate, the through-opening has an elongated slit shape, and it is difficult to accurately maintain the shape and position of the through-opening due to bending or kinking of a portion between adjacent through-openings. It was. Therefore, for example, when an organic EL display device is manufactured using a large TFT substrate, there is a problem that pixels between the TFT substrate cannot be accurately masked. Therefore, the metal mask manufactured by the conventional method has a limit in achieving high definition by narrowing the pixel pitch.
そこで、本発明は、このような問題点に対処し、目標とする薄膜パターンの形成領域に対応して高精細な複数の開口パターンの形成を容易に行い得るようにするマスクの製造方法、マスク及びマスクの製造装置を提供することを目的とする。 Accordingly, the present invention addresses such problems and makes it possible to easily form a plurality of high-definition opening patterns corresponding to a target thin film pattern formation region, a mask manufacturing method , and a mask. And an apparatus for manufacturing a mask.
上記目的を達成するために、本発明によるマスクの製造方法は、基板上に一定形状の複数の薄膜パターンを一定の配列ピッチで並べて形成するためのマスクの製造方法であって、平板状の磁性金属材料に、前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部を設けてメタルマスクを形成する第１ステップと、前記メタルマスクの一面に可視光を透過する樹脂製のフィルムを面接合する第２ステップと、透明基板の一面に前記薄膜パターンと同形状の複数の基準パターンを前記薄膜パターンと同じ配列ピッチで並べて形成し、該基準パターンを下側にしてステージ上に載置された基準基板の前記基準パターンが前記メタルマスクの前記開口部内に位置するように前記メタルマスクを前記基準基板に対して位置合わせした後、前記フィルムを前記基準基板の他面に密着させる第３ステップと、前記メタルマスクの前記開口部内の前記基準パターンに対応した前記フィルムの部分にレーザ光を照射して、前記薄膜パターンと同形状の貫通する開口パターンを形成する第４ステップと、を行なうものである。 In order to achieve the above object, a mask manufacturing method according to the present invention is a mask manufacturing method for forming a plurality of thin film patterns having a fixed shape on a substrate by arranging them at a fixed arrangement pitch, and comprising a flat magnetic plate A first step of forming a metal mask by providing a plurality of openings having a shape larger than that of the thin film pattern corresponding to a region where the thin film pattern is formed in the metal material; and visible light on one surface of the metal mask A second step of surface-bonding a transparent resin film, and a plurality of reference patterns having the same shape as the thin film pattern arranged on one surface of the transparent substrate at the same arrangement pitch as the thin film pattern; The metal mask is placed on the reference substrate so that the reference pattern of the reference substrate placed on the stage is positioned in the opening of the metal mask. Then, after the alignment, the third step of closely attaching the film to the other surface of the reference substrate, and irradiating the portion of the film corresponding to the reference pattern in the opening of the metal mask, And a fourth step of forming an opening pattern having the same shape as the thin film pattern.
好ましくは、前記第４ステップは、前記メタルマスクと前記基準基板を一体的に前記基準パターンの並び方向に搬送しながら、前記レーザ光の照射位置に対して前記搬送方向手前側の位置を撮影可能に設けられた撮像手段で前記基準パターンを撮影し、該撮影画像に基づいて前記基準パターンを検出し、該検出時刻を基準にして前記レーザ光の照射タイミングを制御して実行されるのが望ましい。 Preferably, in the fourth step, the metal mask and the reference substrate are integrally conveyed in the alignment direction of the reference pattern, and the position on the near side in the conveyance direction can be photographed with respect to the irradiation position of the laser beam. It is preferable that the reference pattern is captured by an imaging unit provided in the image, the reference pattern is detected based on the captured image, and the laser light irradiation timing is controlled based on the detection time. .
この場合、前記第４ステップは、前記撮像手段の撮影画像に基づいて、前記メタルマスクの前記開口部の中心と前記基準基板の前記基準パターンの中心との間の位置ずれ量が許容値内であることを確認しながら実行されるのが望ましい。
より好ましくは、前記第４ステップの後に、平坦面を有する保持部材の該平坦面を前記メタルマスクの上面に着脱可能に密着固定して、前記メタルマスクと前記フィルムとを一体的に前記基準基板から剥離する第５ステップを実行するのが望ましい。
In this case, in the fourth step, the amount of positional deviation between the center of the opening of the metal mask and the center of the reference pattern of the reference substrate is within an allowable value based on a photographed image of the imaging means. It is desirable to execute while confirming that there is.
More preferably, after the fourth step, the flat surface of the holding member having a flat surface is detachably adhered and fixed to the upper surface of the metal mask, and the metal mask and the film are integrally integrated with the reference substrate. It is desirable to carry out the fifth step of peeling from the substrate.
また、本発明によるマスクは、基板上に一定形状の複数の薄膜パターンを一定の配列ピッチで並べて形成するためのマスクであって、平板状の磁性金属材料に、前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部を設けたメタルマスクと、前記メタルマスクの一面に面接合され、前記メタルマスク側から前記複数の開口部内の部分にレーザ光を照射し、前記薄膜パターンの形成領域に対応して前記薄膜パターンと同形状の複数の開口パターンを設けた可視光を透過する樹脂製のフィルムと、を備え、前記開口部の断面形状が前記フィルムと反対側に向かって広がりをもつものである。
より好ましくは、前記開口パターンの断面形状が前記メタルマスク側に向かって広がりをもつのが望ましい。
The mask according to the present invention is a mask for forming a plurality of thin film patterns having a fixed shape on a substrate by arranging them at a fixed arrangement pitch, and corresponds to a region where the thin film pattern is formed on a flat magnetic metal material. Then, a metal mask provided with a plurality of through-holes having a shape larger than that of the thin film pattern, and surface-bonded to one surface of the metal mask, and irradiating a portion of the plurality of openings from the metal mask side And a resin-made film that transmits visible light provided with a plurality of opening patterns having the same shape as the thin film pattern corresponding to the formation region of the thin film pattern, and the cross-sectional shape of the opening is the film It has a spread toward the opposite side.
More preferably, it is desirable that the cross-sectional shape of the opening pattern expands toward the metal mask side.
また、本発明によるマスクの製造装置は、基板上に一定形状の複数の薄膜パターンを一定の配列ピッチで並べて形成するためのマスクの製造装置であって、平板状の磁性金属材料に、前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部を設けたメタルマスクの一面に可視光を透過する樹脂製のフィルムが面接合されたマスク用部材の前記フィルムを、透明基板の一面に前記薄膜パターンと同形状の複数の基準パターンを前記薄膜パターンと同じ配列ピッチで並べて形成した基準基板の他面に、前記基準基板の前記基準パターンが前記メタルマスクの前記開口部内に位置するように位置合わせした状態で密着させて一体化した前記マスク用部材と前記基準基板とを、前記基準基板を下側にして前記基準パターンの並び方向に一定速度で搬送する搬送手段と、前記メタルマスクの前記開口部内の前記基準パターンに対応した前記フィルムの部分にレーザ光を照射して、前記薄膜パターンと同形状の貫通する開口パターンを形成するレーザ光学系と、前記レーザ光の照射位置に対して前記マスク用部材及び前記基準基板の搬送方向手前側の位置に前記基準パターンを撮影可能に設けられ、前記搬送方向と交差する方向に複数の受光エレメントを一直線に並べて設けた撮像手段と、前記撮像手段の撮影画像に基づいて前記基準パターンが検出されると、該検出時刻を基準にして前記レーザ光の照射タイミングを制御する制御手段と、を備えるものである。 Further, a mask manufacturing apparatus according to the present invention is a mask manufacturing apparatus for forming a plurality of thin film patterns having a fixed shape on a substrate by arranging them at a fixed arrangement pitch, wherein the thin film is formed on a flat magnetic metal material. The film of the mask member in which a resin film that transmits visible light is surface-bonded to one surface of a metal mask provided with a plurality of through-holes having a shape larger than that of the thin film pattern corresponding to the pattern formation region The other side of the reference substrate formed by arranging a plurality of reference patterns having the same shape as the thin film pattern on one surface of the transparent substrate at the same arrangement pitch as the thin film pattern, the reference pattern of the reference substrate is the metal mask The mask member and the reference substrate, which are integrated in close contact with each other so as to be positioned in the opening, are arranged with the reference substrate facing down. A conveying means that conveys the quasi-pattern in a line direction at a constant speed, and a portion of the film corresponding to the reference pattern in the opening of the metal mask is irradiated with laser light to penetrate through the same shape as the thin film pattern. A laser optical system for forming an aperture pattern; and the reference pattern can be photographed at a position on the front side in the transport direction of the mask member and the reference substrate with respect to the irradiation position of the laser light, and intersects the transport direction. When the reference pattern is detected on the basis of the image pickup means in which a plurality of light receiving elements are arranged in a straight line in the direction to be detected, and the image taken by the image pickup means, the irradiation timing of the laser light is controlled based on the detection time And a control means.
このような構成により、平板状の磁性金属材料に、薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部を設けたメタルマスクの一面に可視光を透過する樹脂製のフィルムが面接合されたマスク用部材の上記フィルムを、透明基板の一面に薄膜パターンと同形状の複数の基準パターンを薄膜パターンと同じ配列ピッチで並べて形成した基準基板の他面に、基準基板の基準パターンがメタルマスクの開口部内に位置するように位置合わせした状態で密着させて一体化したマスク用部材と基準基板とを、基準基板を下側にして搬送手段で基準パターンの並び方向に一定速度で搬送しながら、レーザ光の照射位置に対してマスク用部材及び基準基板の搬送方向手前側の位置に設けられ、搬送方向と交差する方向に複数の受光エレメントを一直線に並べて設けた撮像手段で基準パターンを撮影し、制御手段で撮像手段の撮影画像に基づいて上記基準パターンが検出されると、該検出時刻を基準にしてレーザ光の照射タイミングを制御し、レーザ光学系によりメタルマスクの開口部内の基準パターンに対応したフィルムの部分にレーザ光を照射して、薄膜パターンと同形状の貫通する開口パターンを形成する。 With such a configuration, visible light is transmitted through one surface of a metal mask provided with a plurality of apertures penetrating through a flat magnetic metal material corresponding to a region where the thin film pattern is formed, and having a shape larger than that of the thin film pattern. On the other surface of the reference substrate formed by arranging a plurality of reference patterns having the same shape as the thin film pattern on the one surface of the transparent substrate, the film of the mask member on which the resin film is surface-bonded, The mask member and the reference substrate, which are closely adhered and integrated in a state where the reference pattern of the reference substrate is positioned within the opening of the metal mask, are aligned by the conveying means with the reference substrate facing downward. One that is provided at a position on the near side in the transport direction of the mask member and reference substrate with respect to the laser light irradiation position while transporting at a constant speed in the direction, and intersects the transport direction When a reference pattern is photographed by an image pickup means provided with a plurality of light receiving elements arranged in a straight line, and the reference pattern is detected based on a photographed image of the image pickup means by a control means, the laser light The irradiation timing is controlled, and a laser beam is applied to the film portion corresponding to the reference pattern in the opening of the metal mask by the laser optical system to form an opening pattern having the same shape as the thin film pattern.
好ましくは、前記制御手段は、前記マスク用部材及び前記基準基板の搬送中、前記撮像手段の撮影画像に基づいて、前記メタルマスクの前記開口部の中心と前記基準基板の前記基準パターンの中心との間の位置ずれ量が許容値内であるか否かを判定するのが望ましい。 Preferably, the control unit is configured to determine a center of the opening of the metal mask and a center of the reference pattern of the reference substrate based on a photographed image of the imaging unit during transfer of the mask member and the reference substrate. It is desirable to determine whether or not the amount of misalignment is within an allowable value.
本発明によれば、目標とする薄膜パターン形成領域に対応して基準パターンを設けた基準基板上に可視光を透過するフィルムを密着させた状態で、フィルムを透かして観察される上記基準パターンに対応したフィルム部分にレーザ光を照射して開口パターンを形成することができるので、高精細な複数の開口パターンも容易に形成することができる。 According to the present invention, the reference pattern observed through the film is observed in a state in which the film that transmits visible light is in close contact with the reference substrate provided with the reference pattern corresponding to the target thin film pattern formation region. Runode can form an opening pattern by irradiating a laser beam to the corresponding film portion, the high-definition multiple apertures patterns can be easily formed.
また、フィルムを基準基板の基準パターンを形成した面とは反対側の面に密着させて、開口パターンをレーザ加工しているので、レーザ加工時に基準パターンがダメージを受けることがない。したがって、基準基板を繰り返し使用することができ、経済的である。 In addition, since the opening pattern is laser processed with the film in close contact with the surface of the reference substrate opposite to the surface on which the reference pattern is formed, the reference pattern is not damaged during laser processing. Therefore, the reference substrate can be used repeatedly, which is economical.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明によるマスクの製造方法の実施形態を示す工程図である。このマスクの製造方法は、基板上に一定形状の薄膜パターンを形成するためのもので、メタルマスク１を形成する第１ステップと、メタルマスク１に樹脂製フィルム２を面接合する第２ステップと、基準基板３上にフィルム２を密着させる第３ステップと、フィルム２に複数の開口パターン４を形成する第４ステップと、メタルマスク１とフィルム２とを一体的に基準基板３上から剥離する第５ステップと、を行って、図２に示すマスクを製造するものである。以下、各ステップを詳細に説明する。 Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a process diagram showing an embodiment of a mask manufacturing method according to the present invention. This mask manufacturing method is for forming a thin film pattern having a fixed shape on a substrate, and includes a first step for forming a metal mask 1 and a second step for surface bonding a resin film 2 to the metal mask 1. The third step of bringing the film 2 into close contact with the reference substrate 3, the fourth step of forming a plurality of opening patterns 4 on the film 2, and the metal mask 1 and the film 2 are integrally peeled from the reference substrate 3. The fifth step is performed to manufacture the mask shown in FIG. Hereinafter, each step will be described in detail.
上記第１ステップは、図１（ａ）に示すように、平板状の磁性金属材料に、薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部５を設けてメタルマスク１を形成する工程である。 In the first step, as shown in FIG. 1A, a flat magnetic metal material is provided with a plurality of openings 5 penetrating in a shape larger than that of the thin film pattern corresponding to the formation region of the thin film pattern. In this step, the metal mask 1 is formed.
より詳細には、第１ステップにおいて、メタルマスク１は、例えば１μｍ〜数ｍｍ程度、好ましくは３０μｍ〜５０μｍ程度の厚みを有する例えばニッケル又はニッケル合金からなる磁性金属材料の薄板に上記複数の開口部５を、レジストマスクを使用してウェットエッチング又はイオンミーリング等のドライエッチングをし、又はレーザ加工して設けて形成される。この場合、開口部５は、後述の第４ステップにおいてフィルム２に形成される開口パターン４よりも形状が大きければよいので、開口部５の形成精度は開口パターン４程の高精度は要求されない。なお、開口部５の形状は、蒸着源からの成膜材料の拡がり角に合わせて、図５（ｂ）に示すように例えばフィルム２側に向かって徐々に狭くなっている（縦断面形状が逆台形状）。言い換えれば、開口部５の断面形状は、フィルム２と反対側（蒸着源側）に向かって広がりをもつものである。より好ましくは、後述の開口パターン４の断面形状も、同図（ｅ）に示すように上記開口部５の断面形状に合わせてメタルマスク側（蒸着源側）に向かって広がりをもつのが望ましい。これにより、成膜時に開口部５の縁部における成膜材料のけられがなくなり、薄膜パターンの膜厚を均一に形成することができる。また、メタルマスク１には、上記複数の開口部５の形成領域の外側に、後述の基準基板３に設けられた基板側アライメントマーク６（図３参照）と位置合わせするための貫通する例えば四角い窓状のマスク側アライメントマーク７が開口部５の形成と同時に形成される。 More specifically, in the first step, the metal mask 1 has a plurality of openings formed in a thin plate of a magnetic metal material made of, for example, nickel or a nickel alloy having a thickness of about 1 μm to several mm, preferably about 30 μm to 50 μm. 5 is formed by dry etching such as wet etching or ion milling using a resist mask, or by laser processing. In this case, the opening 5 only needs to have a larger shape than the opening pattern 4 formed on the film 2 in the fourth step described later, and therefore, the opening 5 is not required to be as accurate as the opening pattern 4. In addition, the shape of the opening 5 is gradually narrowed toward the film 2 side, for example , as shown in FIG. 5 (b) in accordance with the spread angle of the film forming material from the vapor deposition source (the longitudinal cross-sectional shape is Inverted trapezoidal shape). In other words, the cross-sectional shape of the opening 5 is widened toward the opposite side (deposition source side) from the film 2. More preferably, the cross-sectional shape of an opening pattern 4 to be described later also has a spread toward the metal mask side (deposition source side) in accordance with the cross-sectional shape of the opening 5 as shown in FIG. . Thereby, the film-forming material at the edge portion of the opening 5 is not lost during film formation, and the film thickness of the thin film pattern can be formed uniformly. In addition, the metal mask 1 has, for example, a square penetrating therethrough for alignment with a substrate-side alignment mark 6 (see FIG. 3) provided on a reference substrate 3 to be described later outside a region where the plurality of openings 5 are formed. A window-shaped mask side alignment mark 7 is formed simultaneously with the formation of the opening 5.
上記第２ステップは、図１（ｂ）に示すように、メタルマスク１の一面１ａに、線膨張係数が一定の許容範囲内でメタルマスク１に等しく且つ可視光を透過する樹脂製のフィルム２を面接合してマスク用部材１０を形成する工程である。 In the second step, as shown in FIG. 1B, a resin film 2 is formed on one surface 1a of the metal mask 1 and has a linear expansion coefficient equal to that of the metal mask 1 within a certain allowable range and transmits visible light. Is a step of forming a mask member 10 by surface bonding.
上記面接合には、メタルマスク１にフィルム状の樹脂を圧着させる方法、メタルマスク１にフィルム状の樹脂を接着させる方法、半乾燥状態の樹脂溶液にメタルマスク１を圧着する方法、又はメタルマスク１に溶液状の樹脂をコーティングする方法等が含まれる。 For the surface bonding, a method of pressure bonding a film-like resin to the metal mask 1, a method of bonding a film-like resin to the metal mask 1, a method of pressure-bonding the metal mask 1 to a semi-dried resin solution, or a metal mask 1 includes a method of coating a solution-like resin.
詳細には、上記フィルム状の樹脂を圧着させる方法には、熱可塑性のフィルム２や表面に融着性処理が施されたフィルム２にメタルマスク１を熱圧着する方法や、フィルム２の表面を改質処理してメタルマスク１を熱圧着する方法がある。この場合、フィルム２の表面にカルボキシル基（−ＣＯＯＨ）やカルボニル基（−ＣＯ−）等を形成して表面の改質を行えば、メタルマスク１との界面における化学結合により接着が可能となる。又は、フィルム２の表面を大気圧プラズマ又は減圧プラズマ中でプラズマ処理したり、アルカリ溶液でフィルム２の表面をウェットエッチングしたりしてフィルム２の表面を改質してもよい。 In detail, the method of press-bonding the film-like resin includes a method of thermo-compressing the metal mask 1 to the thermoplastic film 2 or the film 2 whose surface has been subjected to a fusion process, There is a method in which the metal mask 1 is thermocompression-bonded by a modification treatment. In this case, if a carboxyl group (—COOH), a carbonyl group ( —CO— ), or the like is formed on the surface of the film 2 to modify the surface, adhesion can be achieved by chemical bonding at the interface with the metal mask 1. . Alternatively, the surface of the film 2 may be modified by subjecting the surface of the film 2 to plasma treatment in atmospheric pressure plasma or reduced pressure plasma, or wet etching the surface of the film 2 with an alkaline solution.
また、メタルマスク１にフィルム状の樹脂を接着させる方法には、溶剤を含まない、又は溶剤を極めて少ない量だけ含む硬化性樹脂により接着する方法があり、例えば周縁領域に金属膜をコーティングしたフィルム２を使用して、該金属膜上に塗布されたノンフラックス半田によりフィルム２をメタルマスク１にノンフラックス半田付けする方法もこれに含まれる。 Further, as a method of adhering a film-like resin to the metal mask 1, there is a method of adhering with a curable resin that does not contain a solvent or contains an extremely small amount of a solvent. For example, a film in which a peripheral region is coated with a metal film This includes a method of non-flux soldering the film 2 to the metal mask 1 using the non-flux solder applied on the metal film.
ここで使用するフィルム材料は、紫外線のレーザ光Ｌの照射によりアブレーションする樹脂製フィルムがよく、好ましくは、例えばポリイミドやポリエチレンテレフタレート（ＰＥＴ）等がよい。特に、ポリイミドは、線膨張係数が約１０×１０−６／℃〜約４０×１０−６／℃であり、ニッケル等の金属の線膨張係数（約６×１０−６／℃〜約２０×１０−６／℃）と許容範囲内で等しいため、金属材料からなるメタルマスク１と組合せて使用する場合、成膜時に両部材の熱膨張係数の違いによりマスクに反りが発生するのを抑制することができるのでより望ましい。 The film material used here may be a resin film that is ablated by irradiation with ultraviolet laser light L, and preferably, for example, polyimide, polyethylene terephthalate (PET), or the like. In particular, polyimide has a linear expansion coefficient of about 10 × 10 −6 / ° C. to about 40 × 10 −6 / ° C., and a linear expansion coefficient of metal such as nickel (about 6 × 10 −6 / ° C. to about 20 × 10 −6 / ° C.) within the allowable range, and when used in combination with the metal mask 1 made of a metal material, the mask is prevented from warping due to the difference in thermal expansion coefficient between the two members during film formation. It is more desirable because it can.
上記第３ステップにおいては、図１（ｃ）に示すように、透明基板８の一面８ａに薄膜パターンと同形状の、後述の第４ステップにおけるレーザ光Ｌの照射目標となる複数の基準パターン９を薄膜パターンの配列ピッチと同じ配列ピッチで並べて形成し、該基準パターン９を下側にしてステージ上に載置された基準基板３（図３参照）の上記基準パターン９がメタルマスク１の開口部５内に位置するようにメタルマスク１を基準基板３に対して位置合わせした後、フィルム２を基準基板３の他面８ｂに密着させる。なお、基準基板３には、上記複数の基準パターン９の形成領域外にて上記マスク側アライメントマーク７に対応した位置に、例えば十字状の基板側アライメントマーク６が上記基準パターン９と同時にクロム（Ｃｒ）等の薄膜により形成されている。 In the third step, as shown in FIG. 1C, a plurality of reference patterns 9 that are the same shape as the thin film pattern on one surface 8 a of the transparent substrate 8 and become the irradiation target of the laser light L in the fourth step described later. Are arranged at the same arrangement pitch as the arrangement pitch of the thin film pattern, and the reference pattern 9 of the reference substrate 3 (see FIG. 3) placed on the stage with the reference pattern 9 on the lower side is the opening of the metal mask 1. After the metal mask 1 is aligned with the reference substrate 3 so as to be located in the portion 5, the film 2 is brought into close contact with the other surface 8 b of the reference substrate 3. For example, a cross-shaped substrate-side alignment mark 6 is formed on the reference substrate 3 at the same time as the reference pattern 9 at a position corresponding to the mask-side alignment mark 7 outside the region where the plurality of reference patterns 9 are formed. Cr) or the like.
上記メタルマスク１と基準基板３との位置合わせは、メタルマスク１に予め形成されたマスク側アライメントマーク７と、基準基板３に予め形成された基板側アライメントマーク６とを顕微鏡により観察しながら、基板側アライメントマーク６の中心がマスク側アライメントマーク７の中心に合致するように調整して行われる。 The alignment between the metal mask 1 and the reference substrate 3 is performed by observing the mask-side alignment mark 7 formed in advance on the metal mask 1 and the substrate-side alignment mark 6 formed in advance on the reference substrate 3 with a microscope. The adjustment is performed so that the center of the substrate-side alignment mark 6 matches the center of the mask-side alignment mark 7.
また、フィルム２と基準基板３との密着は、ステージの裏面に備えたマグネットチャックの磁力によりメタルマスク１を吸着して行われ、同時にメタルマスク１、フィルム２及び基準基板３が一体的にステージに固定される。 Further, the film 2 and the reference substrate 3 are brought into close contact with each other by attracting the metal mask 1 by the magnetic force of the magnet chuck provided on the back surface of the stage, and at the same time, the metal mask 1, the film 2 and the reference substrate 3 are integrally integrated with the stage. Fixed to.
上記第４ステップにおいては、図１（ｄ）に示すように、メタルマスク１の開口部５内の基準パターン９に対応したフィルム２の部分に、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザ１７を使用して、エネルギー密度が０．１Ｊ／ｃｍ２〜２０Ｊ／ｃｍ２のレーザ光Ｌを照射し、薄膜パターンと同形状の貫通する開口パターン４を形成する。 In the fourth step, as shown in FIG. 1D, an excimer laser 17 having a wavelength of 400 nm or less, for example, KrF248 nm, is applied to the portion of the film 2 corresponding to the reference pattern 9 in the opening 5 of the metal mask 1. Is used to irradiate a laser beam L having an energy density of 0.1 J / cm 2 to 20 J / cm 2 to form an opening pattern 4 having the same shape as the thin film pattern.
この第４ステップは、マスク用部材１０と基準基板３とを基準基板３の基準パターン９の並び方向（図１（ｄ）の矢印方向）に搬送しながら、レーザ光Ｌの照射位置に対してマスク用部材１０及び基準基板３の搬送方向手前側の位置を撮影可能に設けられた撮像手段１１で透過照明により基準パターン９を撮影し、該撮影画像に基づいて基準パターン９を検出し、該検出時刻を基準にしてレーザ光Ｌの照射タイミングを制御して実行される。これにより、図２に示すようなマスクが完成する。 In the fourth step, the mask member 10 and the reference substrate 3 are transported in the direction in which the reference patterns 9 of the reference substrate 3 are arranged (in the direction indicated by the arrow in FIG. 1D), while the laser beam L is irradiated. The reference pattern 9 is imaged by transmission illumination with the imaging means 11 provided so as to be able to image the position of the mask member 10 and the reference substrate 3 in the transport direction, and the reference pattern 9 is detected based on the captured image. This is executed by controlling the irradiation timing of the laser beam L with reference to the detection time. Thereby, a mask as shown in FIG. 2 is completed.
上記撮像手段１１は、マスク用部材１０及び基準基板３の搬送方向と交差する方向に複数の受光エレメントを一直線に並べて設けたラインカメラであり、上記基準パターン９は、撮像手段１１の撮影画像に基づいて上記搬送方向における輝度変化（例えば、透過照明の場合は明から暗への輝度変化）から検出することができる。 The image pickup means 11 is a line camera in which a plurality of light receiving elements are arranged in a straight line in a direction intersecting the transport direction of the mask member 10 and the reference substrate 3, and the reference pattern 9 is an image taken by the image pickup means 11. Based on this, it is possible to detect from a change in luminance in the transport direction (for example, a change in luminance from light to dark in the case of transmitted illumination).
さらに、上記第４ステップは、撮像手段１１の撮影画像に基づいて、メタルマスク１の開口部５の中心と基準基板３の基準パターン９の中心との間の位置ずれ量が許容値内であることを確認しながら実行される。より詳細には、撮像手段１１の撮影画像に基づいてマスク用部材１０及び基準基板３の移動方向における図４に示すような閾値を超えて変化する輝度変化を検出し、互いに隣接する暗から明への輝度変化の位置から両者間の距離Ｄ１を算出し、さらに互いに隣接する明から暗への輝度変化の位置から両者間の距離Ｄ２を算出し、｜Ｄ１−Ｄ２｜を演算して該演算結果が予め定められた許容値内にあるか否かが判定される。この場合、上記演算結果が許容値外のときには、メタルマスク１と基準基板３とのアライメントミス、又はメタルマスク１の開口部５の形成精度不良と判断して、第４ステップは、直ちに終了される。 Further, in the fourth step, the amount of positional deviation between the center of the opening 5 of the metal mask 1 and the center of the reference pattern 9 of the reference substrate 3 is within an allowable value based on the photographed image of the imaging means 11. It is executed while confirming. More specifically, a change in luminance that changes beyond the threshold value as shown in FIG. 4 in the movement direction of the mask member 10 and the reference substrate 3 is detected based on the captured image of the imaging unit 11, and the brightness changes from dark to adjacent. The distance D1 between the two is calculated from the position of the brightness change to the distance, the distance D2 between the two is calculated from the position of the brightness change from light to dark adjacent to each other, and | D1-D2 | It is determined whether the result is within a predetermined tolerance. In this case, when the calculation result is outside the allowable value, it is determined that the alignment error between the metal mask 1 and the reference substrate 3 or the formation accuracy of the opening 5 of the metal mask 1 is poor, and the fourth step is immediately ended. The
上記第５ステップにおいては、図１（ｅ）に示すように、吸着面が平坦に形成された図示省略の磁気チャック（保持部材）をメタルマスク１の上面に設置し、磁気チャックの電磁石をオンして磁気チャックの磁力によりメタルマスク１を吸着してマスクを基準基板３上から剥離し、磁気チャック側に受け取る。これにより、本発明のマスクの製造工程が全て終了する。以後、この磁気チャックにメタルマスク１を吸着した状態でマスクのハンドリングを行えば、マスクの開口パターン４の形状及び位置が維持され、その後の高精細な薄膜パターンの形成を容易に行うことができる。 In the fifth step, as shown in FIG. 1E, a magnetic chuck (holding member) (not shown) having a flat attracting surface is placed on the upper surface of the metal mask 1, and the electromagnet of the magnetic chuck is turned on. Then, the metal mask 1 is attracted by the magnetic force of the magnetic chuck, and the mask is peeled off from the reference substrate 3 and received by the magnetic chuck side. This completes the mask manufacturing process of the present invention. Thereafter, if the mask is handled while the metal mask 1 is attracted to the magnetic chuck, the shape and position of the opening pattern 4 of the mask can be maintained, and the subsequent high-definition thin film pattern can be easily formed. .
又は、上記第５ステップは、一面に剥離容易な粘着剤を塗布したシート状の保持部材の上記一面側をメタルマスク１の上面に密着し、保持部材にメタルマスク１を貼り付けてマスクを基準基板３上から剥離してもよい。これにより、マスクのハンドリング性がより向上する。 Alternatively, in the fifth step, the one surface side of the sheet-like holding member coated with an easily peelable adhesive on one surface is brought into close contact with the upper surface of the metal mask 1, and the metal mask 1 is attached to the holding member and the mask is used as a reference. The substrate 3 may be peeled off. Thereby, the handling property of a mask improves more.
なお、上記実施形態においては、マスク用部材１０及び基準基板３を搬送しながらレーザ光Ｌを照射してフィルム２に開口パターン４を形成する場合について説明したが、本発明はこれに限られず、レーザ光Ｌ側を基準基板３の基準パターン９の配列方向にステップ移動しながら開口パターン４を形成してもよい。 In the above-described embodiment, the case where the opening pattern 4 is formed on the film 2 by irradiating the laser beam L while conveying the mask member 10 and the reference substrate 3 has been described, but the present invention is not limited thereto, The opening pattern 4 may be formed while stepping the laser beam L side in the arrangement direction of the reference pattern 9 on the reference substrate 3.
次に、本発明によるマスクの製造装置について添付図を参照して説明する。
図５は本発明によるマスクの製造装置の実施形態を示す正面図である。このマスクの製造装置は、基板上に一定形状の複数の薄膜パターンを一定の配列ピッチで並べて形成するための本発明のマスクを製造するものであり、搬送手段１２と、レーザ光学系１３と、撮像手段１１と、照明手段１４と、制御手段１５と、を備えて構成されている。
Next, a mask manufacturing apparatus according to the present invention will be described with reference to the accompanying drawings.
FIG. 5 is a front view showing an embodiment of a mask manufacturing apparatus according to the present invention. This mask manufacturing apparatus manufactures a mask of the present invention for forming a plurality of thin film patterns having a fixed shape on a substrate by arranging them at a fixed arrangement pitch, and includes a conveying means 12, a laser optical system 13, The imaging unit 11, the illumination unit 14, and the control unit 15 are provided.
上記搬送手段１２は、ステージ上にマスク用部材１０及び基準基板３を載置して矢印Ａで示す方向に一定速度で搬送するものであり、例えば、矢印Ａ方向に一定の間隔で並べて設けた複数のリニアモータテージ１６と、リニアモータステージ１６の矢印Ａに平行な少なくとも一端部側にマスク用部材１０及び基準基板３の縁部を保持して矢印Ａ方向に搬送する図示省略の搬送機構とを備えて構成されている。また、搬送機構はパルスモータで駆動され、パルスモータの１パルス駆動で搬送機構は一定距離移動するようになっている。したがって、パルスモータの駆動パルス数をカウントすることにより、搬送機構の移動距離を知ることができる。 The transfer means 12 is configured to place the mask member 10 and the reference substrate 3 on the stage and transfer the mask member 10 and the reference substrate 3 at a constant speed in the direction indicated by the arrow A. A plurality of linear motor ages 16, and a transport mechanism (not shown) that holds the edge of the mask member 10 and the reference substrate 3 on at least one end side parallel to the arrow A of the linear motor stage 16 and transports it in the arrow A direction. It is configured with. Further, the transport mechanism is driven by a pulse motor, and the transport mechanism moves a certain distance by one pulse drive of the pulse motor. Therefore, the moving distance of the transport mechanism can be known by counting the number of driving pulses of the pulse motor.
上記搬送手段１２の上方には、レーザ光学系１３が設けられている。このレーザ光学系１３は、メタルマスク１の開口部５内の上記基準パターン９に対応したフィルム２の部分にレーザ光Ｌを照射して、薄膜パターンと同形状の貫通する開口パターン４を形成するものであり、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザ１７と、レーザ光Ｌのビーム径を拡大すると共に強度分布を均一化して射出する照明光学系１８と、上記基準パターン９と相似形のストライプ状の開口が形成されレーザ光Ｌの断面形状を整形するためのマスク１９と、該マスク１９の開口を基準基板３上に一定の倍率で縮小投影するシリンドリカルレンズ２０とを備えて構成されている。 A laser optical system 13 is provided above the conveying means 12. The laser optical system 13 irradiates a portion of the film 2 corresponding to the reference pattern 9 in the opening 5 of the metal mask 1 with the laser beam L, thereby forming an opening pattern 4 having the same shape as the thin film pattern. An excimer laser 17 having a wavelength of 400 nm or less, for example, KrF248 nm, an illumination optical system 18 that expands the beam diameter of the laser light L and uniformizes the intensity distribution, and is similar to the reference pattern 9 A mask 19 for forming a stripe-shaped opening and shaping the cross-sectional shape of the laser beam L, and a cylindrical lens 20 for reducing and projecting the opening of the mask 19 on the reference substrate 3 at a constant magnification are configured. Yes.
上記レーザ光学系１３によるレーザ光Ｌの照射位置に対して矢印Ａで示すマスク用部材１０及び基準基板３の搬送方向手前側に一定距離はなれた位置を撮影可能に撮像手段１１が設けられている。この撮像手段１１は、基準基板３の基準パターン９を撮影するもので、上記搬送方向と交差する方向に複数の受光エレメントを一直線に並べて設けたラインカメラであり、隣接するリニアモータステージ１６の間に設けられている。なお、撮像手段１１は、搬送手段１２の上方に設けてもよい。この場合、後述の照明手段１４は、隣接するリニアモータステージ１６の間に設けて下から基準基板３を照明するようにするとよい。 An imaging means 11 is provided so as to be able to photograph a position that is a predetermined distance away from the irradiation position of the laser beam L by the laser optical system 13 on the front side in the transport direction of the mask member 10 and the reference substrate 3 indicated by an arrow A. . This imaging means 11 is for photographing the reference pattern 9 on the reference substrate 3, and is a line camera in which a plurality of light receiving elements are arranged in a straight line in a direction crossing the transport direction, and between adjacent linear motor stages 16. Is provided. Note that the imaging unit 11 may be provided above the transport unit 12. In this case, an illuminating means 14 described later is preferably provided between the adjacent linear motor stages 16 so as to illuminate the reference substrate 3 from below.
上記搬送手段１２の上方には、撮像手段１１に対向して照明手段１４が設けられている。この照明手段１４は、撮像手段１１が透過光により基準パターン９を撮影できるようにするためのものであり、可視光を放射する光源２１と、光ファイバー２２とを備えて構成されている。 An illumination unit 14 is provided above the conveying unit 12 so as to face the imaging unit 11. The illuminating unit 14 is for enabling the imaging unit 11 to capture the reference pattern 9 with transmitted light, and includes a light source 21 that emits visible light and an optical fiber 22.
上記搬送手段１２と、エキシマレーザ１７と、撮像手段１１とに結線して制御手段１５が設けられている。この制御手段１５は、撮像手段１１の撮影画像に基づいて基準パターン９が検出されると、該検出時刻を基準にしてレーザ光Ｌの照射タイミングを制御するもので、図６に示すように搬送手段駆動コントローラ２３と、レーザ駆動コントローラ２４と、画像処理部２５と、演算部２６と、メモリ２７と、制御部２８と、を含んでいる。 A control means 15 is provided in connection with the transport means 12, excimer laser 17, and imaging means 11. When the reference pattern 9 is detected based on the photographed image of the image pickup means 11, the control means 15 controls the irradiation timing of the laser light L with reference to the detection time. As shown in FIG. A means drive controller 23, a laser drive controller 24, an image processing unit 25, a calculation unit 26, a memory 27, and a control unit 28 are included.
上記搬送手段駆動コントローラ２３は、搬送手段１２の搬送機構を矢印Ａ方向に一定速度で移動させるもので、パルスモータのパルス数をカウントして搬送機構の移動距離も検出できるようになっている。また、上記レーザ駆動コントローラ２４は、エキシマレーザ１７のパルス発振のタイミングを制御するものであり、撮像手段１１により基準パターン９が検出されてから一定時間経過後にエキシマレーザ１７に発振指令を出力するようになっている。さらに、画像処理部２５は、撮像手段１１によって撮影された画像を処理し、搬送方向における輝度変化から基準基板３の基準パターン９及びメタルマスク１の開口部５の縁部を検出するものである。また、演算部２６は、パルスモータのパルス数をカウントし、該カウント数が目標値に達するとレーザ駆動コントローラ２４にエキシマレーザ１７の制御命令を出力するようになっている。さらに、演算部２６は、パルスモータのパルス数をカウントして、画像処理部２５で検出された互いに隣接する暗から明への輝度変化部の間隔Ｄ１、及び互いに隣接する明から暗への輝度変化部の間隔Ｄ２を算出し、｜Ｄ１−Ｄ２｜を演算してメタルマスク１の開口部５の中心と基準パターン９の中心との間の位置ずれ量を算出し、該位置ずれ量が一定の許容値内にあるか否かを判定するようになっている。また、上記メモリ２７は、上記パルスカウント数の目標値、搬送機構の移動速度（パルスモータのパルス周波数）、エキシマレーザ１７のパワー設定値、及び上記位置ずれ量の許容値、基準パターン９の配列ピッチ等を予め記憶しておくものである。そして、制御部２８は、上記各要素が適切に駆動するように装置全体を統合して制御するものである。 The transfer means drive controller 23 moves the transfer mechanism of the transfer means 12 at a constant speed in the direction of arrow A, and can detect the moving distance of the transfer mechanism by counting the number of pulses of the pulse motor. The laser drive controller 24 controls the timing of pulse oscillation of the excimer laser 17 and outputs an oscillation command to the excimer laser 17 after a lapse of a certain time after the reference pattern 9 is detected by the imaging means 11. It has become. Further, the image processing unit 25 processes the image captured by the imaging unit 11 and detects the reference pattern 9 of the reference substrate 3 and the edge of the opening 5 of the metal mask 1 from the luminance change in the transport direction. . The arithmetic unit 26 counts the number of pulses of the pulse motor, and outputs a control command for the excimer laser 17 to the laser drive controller 24 when the count reaches a target value. Further, the calculation unit 26 counts the number of pulses of the pulse motor to detect the interval D1 between the adjacent dark-to-light luminance change portions detected by the image processing unit 25 and the adjacent bright-to-dark luminance. The distance D2 between the changed portions is calculated, and | D1-D2 | is calculated to calculate the amount of displacement between the center of the opening 5 of the metal mask 1 and the center of the reference pattern 9, and the amount of displacement is constant. It is determined whether the value is within the allowable value. Further, the memory 27 stores the target value of the pulse count number, the moving speed of the transport mechanism (pulse frequency of the pulse motor), the power setting value of the excimer laser 17, the allowable value of the positional deviation amount, and the arrangement of the reference pattern 9 A pitch or the like is stored in advance. And the control part 28 integrates and controls the whole apparatus so that said each element may drive appropriately.
以下、このように構成されたマスクの製造装置の動作について、図７のフローチャートを参照して説明する。
先ず、ステップＳ１においては、互いに位置合わせして一体化されたマスク用部材１０及び基準基板３を、基準基板３側を下にしてステージ上に位置決めして載置し、図示省略の搬送機構によりマスク用部材１０及び基準基板３の縁部を保持して図５に示す矢印Ａ方向に一定速度で搬送を開始する。
The operation of the mask manufacturing apparatus configured as described above will be described below with reference to the flowchart of FIG.
First, in step S1, the mask member 10 and the reference substrate 3, which are aligned and integrated with each other, are positioned and placed on the stage with the reference substrate 3 side down, and a transfer mechanism (not shown) is used. The mask member 10 and the edge of the reference substrate 3 are held, and conveyance is started at a constant speed in the direction of arrow A shown in FIG.
ステップＳ２においては、撮像手段１１によりマスク用部材１０及び基準基板３を下側から撮影し、その撮影画像を画像処理部２５で処理して矢印Ａ方向の暗から明への輝度変化及び明から暗への輝度変化（図４参照）を検出する。 In step S2, the masking member 10 and the reference substrate 3 are photographed from the lower side by the imaging means 11, and the photographed image is processed by the image processing unit 25 to change the brightness from dark to bright in the direction of arrow A and from the bright. A change in luminance to dark (see FIG. 4) is detected.
ステップＳ３においては、暗から明への輝度変化が検出されてから次の暗から明への輝度変化が検出されるまでのパルスモータの駆動パルス数、及び明から暗への輝度変化が検出されてから次の明から暗への輝度変化が検出されるまでのパルスモータの駆動パルス数を演算部２６でカウントし、各カウント数から互いに隣接する暗から明への輝度変化部の間隔Ｄ１、及び互いに隣接する明から暗への輝度変化部の間隔Ｄ２を算出する。そして、｜Ｄ１−Ｄ２｜を演算してメタルマスク１の開口部５の中心と基準パターン９の中心との間の位置ずれ量を算出する。 In step S3, the number of driving pulses of the pulse motor from the detection of the luminance change from dark to light until the detection of the next luminance change from dark to light, and the luminance change from light to dark are detected. The number of driving pulses of the pulse motor until the next brightness change from light to dark is detected is counted by the calculation unit 26, and the interval D1 between the dark to light brightness change parts adjacent to each other from each count number, And the interval D2 between the brightness change portions adjacent to each other from light to dark is calculated. Then, | D1-D2 | is calculated to calculate the amount of misalignment between the center of the opening 5 of the metal mask 1 and the center of the reference pattern 9.
ステップＳ４においては、演算部２６で上記位置ずれ量とメモリ２７から読み出した許容値とを比較し、上記位置ずれ量が許容範囲内にあるか否かを判定する。ここで、“ＹＥＳ”判定となるとステップＳ５に進む。一方、“ＮＯ”判定となった場合には、メタルマスク１と基準基板３とのアライメントミス、又はメタルマスク１の開口部５の形成精度不良と判断してレーザ加工を終了する。そして、搬送機構を高速で移動させてマスク用部材１０及び基準基板３を搬出する。 In step S4, the calculation unit 26 compares the positional deviation amount with the allowable value read from the memory 27, and determines whether or not the positional deviation amount is within an allowable range. Here, if it becomes "YES" determination, it will progress to step S5. On the other hand, if “NO” is determined, it is determined that the alignment error between the metal mask 1 and the reference substrate 3 or the formation accuracy of the opening 5 of the metal mask 1 is poor, and the laser processing is terminated. Then, the transport mechanism is moved at a high speed to carry out the mask member 10 and the reference substrate 3.
ステップＳ５においては、画像処理部２５において明から暗への輝度変化にて奇数番目の輝度変化の検出に基づいて基準パターン９の搬送方向先頭側の縁部が検出される。 In step S <b> 5, the edge on the leading side in the transport direction of the reference pattern 9 is detected in the image processing unit 25 based on detection of an odd-numbered luminance change due to a luminance change from light to dark.
ステップＳ６においては、ステップＳ５で基準パターン９が検出されると、該検出時刻を基準にして演算部２６で搬送機構のパルスモータの駆動パルス数をカウントする。そして、メモリ２７から読み出したパルスカウント数の目標値と比較し、パルスカウント数が目標値と合致したか否か、即ちマスク用部材１０と一体的に基準基板３が予め定められた所定距離移動したか否かが判定される。ここで、“ＹＥＳ”判定となるとステップＳ７に進む。なお、パルスカウント数が目標値に合致したときは、基準基板３の基準パターン９がレーザ光学系１３のレーザ光Ｌの照射位置に丁度達したときである。 In step S6, when the reference pattern 9 is detected in step S5, the calculation unit 26 counts the number of drive pulses of the pulse motor of the transport mechanism based on the detection time. Then, it is compared with the target value of the pulse count number read from the memory 27, whether or not the pulse count number matches the target value, that is, the reference substrate 3 is moved by a predetermined distance integrally with the mask member 10. It is determined whether or not. Here, if it becomes "YES" determination, it will progress to step S7. The pulse count number matches the target value when the reference pattern 9 on the reference substrate 3 has just reached the irradiation position of the laser light L of the laser optical system 13.
ステップＳ７においては、演算部２６からレーザ駆動コントローラ２４にエキシマレーザ１７の発振命令を出力する。これにより、レーザ駆動コントローラ２４からエキシマレーザ１７に発振指令が出力され、エキシマレーザ１７はパルス発振する。これにより、レーザ光Ｌが基準基板３の基準パターン９上のフィルム２部分に照射し、当該部分のフィルム２をアブレーションして基準パターン９（薄膜パターン）と同形状の貫通する開口パターン４が形成される。なお、開口パターン４の形成は、エキシマレーザ１７から一定時間内に複数ショットのレーザ光Ｌを放射して行ってもよい。 In step S <b> 7, an oscillation command for the excimer laser 17 is output from the calculation unit 26 to the laser drive controller 24. As a result, an oscillation command is output from the laser drive controller 24 to the excimer laser 17, and the excimer laser 17 oscillates in pulses. Thereby, the laser beam L is applied to the film 2 portion on the reference pattern 9 of the reference substrate 3, and the film 2 in the portion is ablated to form an opening pattern 4 having the same shape as the reference pattern 9 (thin film pattern). Is done. The opening pattern 4 may be formed by emitting a plurality of shots of laser light L from the excimer laser 17 within a predetermined time.
続いて、ステップＳ８に進んで基準パターン９に対応した全ての開口パターン４が形成されたか否かが判定される。ここで、“ＮＯ”判定となると、ステップＳ２に戻って、全ての開口パターン４が形成されてステップＳ８が“ＹＥＳ”判定となるまで、ステップＳ２〜Ｓ８が繰り返し実行される。 Then, it progresses to step S8 and it is determined whether all the opening patterns 4 corresponding to the reference pattern 9 were formed. If "NO" is determined here, the process returns to step S2, and steps S2 to S8 are repeatedly executed until all the opening patterns 4 are formed and step S8 is determined to be "YES".
なお、ステップＳ７は、基準基板３の搬送方向の先頭から２番目以降の基準パターン９に対応する開口パターン４の形成を次のようにして行ってもよい。即ち、演算部２６において上記パルスモータの駆動パルス数をカウントし、該カウント数に基づいて算出した搬送機構の移動距離とメモリ２７から読み出した基準パターン９の配列ピッチとを比較し、両者が合致する度にエキシマレーザ１７を発振させて行ってもよい。 In step S7, the opening pattern 4 corresponding to the second and subsequent reference patterns 9 from the top in the transport direction of the reference substrate 3 may be formed as follows. That is, the number of driving pulses of the pulse motor is counted in the arithmetic unit 26, and the moving distance of the transport mechanism calculated based on the counted number is compared with the arrangement pitch of the reference pattern 9 read from the memory 27. The excimer laser 17 may be oscillated each time.
また、上記実施形態においては、ステップＳ３〜Ｓ６がシリースに実行されるように説明したが、実際は、ステップＳ３〜Ｓ４とステップＳ５〜Ｓ６とはパラレルに実行される。 Moreover, in the said embodiment, although demonstrated so that step S3-S6 might be performed in series, step S3-S4 and step S5-S6 are actually performed in parallel.
１…メタルマスク
２…フィルム
３…基準基板
４…開口パターン
５…開口部
８…透明基板
９…基準パターン
１０…マスク用部材
１１…撮像手段
１２…搬送手段
１３…レーザ光学系
１５…制御手段
Ｌ…レーザ光
DESCRIPTION OF SYMBOLS 1 ... Metal mask 2 ... Film 3 ... Reference board 4 ... Opening pattern 5 ... Opening part 8 ... Transparent substrate 9 ... Reference pattern 10 ... Member for mask 11 ... Imaging means 12 ... Conveyance means 13 ... Laser optical system 15 ... Control means L ... Laser light
Claims (8)
平板状の磁性金属材料に、前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部を設けてメタルマスクを形成する第１ステップと、
前記メタルマスクの一面に可視光を透過する樹脂製のフィルムを面接合する第２ステップと、
透明基板の一面に前記薄膜パターンと同形状の複数の基準パターンを前記薄膜パターンと同じ配列ピッチで並べて形成し、該基準パターンを下側にしてステージ上に載置された基準基板の前記基準パターンが前記メタルマスクの前記開口部内に位置するように前記メタルマスクを前記基準基板に対して位置合わせした後、前記フィルムを前記基準基板の他面に密着させる第３ステップと、
前記メタルマスクの前記開口部内の前記基準パターンに対応した前記フィルムの部分にレーザ光を照射して、前記薄膜パターンと同形状の貫通する開口パターンを形成する第４ステップと、
を行なうことを特徴とするマスクの製造方法。 A method for manufacturing a mask for forming a plurality of thin film patterns having a fixed shape on a substrate by arranging them at a fixed arrangement pitch,
A first step of forming a metal mask by providing a plurality of openings having a shape larger than that of the thin film pattern corresponding to the formation region of the thin film pattern in the flat magnetic metal material;
A second step of surface-bonding a resin film that transmits visible light on one surface of the metal mask;
A plurality of reference patterns having the same shape as the thin film pattern are arranged on one surface of the transparent substrate at the same arrangement pitch as the thin film pattern, and the reference pattern of the reference substrate placed on the stage with the reference pattern on the lower side A third step of aligning the metal mask with respect to the reference substrate so that the film is positioned in the opening of the metal mask, and then bringing the film into close contact with the other surface of the reference substrate;
A fourth step of irradiating a portion of the film corresponding to the reference pattern in the opening of the metal mask with a laser beam to form an opening pattern having the same shape as the thin film pattern;
A method for manufacturing a mask, characterized in that:
平板状の磁性金属材料に、前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部を設けたメタルマスクと、
前記メタルマスクの一面に面接合され、前記メタルマスク側から前記複数の開口部内の部分にレーザ光を照射し、前記薄膜パターンの形成領域に対応して前記薄膜パターンと同形状の複数の開口パターンを設けた可視光を透過する樹脂製のフィルムと、
を備え、
前記開口部の断面形状が前記フィルムと反対側に向かって広がりをもつことを特徴とするマスク。 A mask for forming a plurality of thin film patterns having a fixed shape on a substrate by arranging them at a fixed arrangement pitch,
A metal mask provided with a plurality of openings penetrating in a flat magnetic metal material having a shape larger than that of the thin film pattern corresponding to the formation region of the thin film pattern;
A plurality of opening patterns that are surface-bonded to one surface of the metal mask, irradiate laser light to the portions in the plurality of openings from the metal mask side, and have the same shape as the thin film pattern corresponding to the formation region of the thin film pattern A resin film that transmits visible light,
With
A mask characterized in that the cross-sectional shape of the opening has a spread toward the opposite side of the film.
平板状の磁性金属材料に、前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部を設けたメタルマスクの一面に可視光を透過する樹脂製のフィルムが面接合されたマスク用部材の前記フィルムを、透明基板の一面に前記薄膜パターンと同形状の複数の基準パターンを前記薄膜パターンと同じ配列ピッチで並べて形成した基準基板の他面に、前記基準基板の前記基準パターンが前記メタルマスクの前記開口部内に位置するように位置合わせした状態で密着させて一体化した前記マスク用部材と前記基準基板とを、前記基準基板を下側にして前記基準パターンの並び方向に一定速度で搬送する搬送手段と、
前記メタルマスクの前記開口部内の前記基準パターンに対応した前記フィルムの部分にレーザ光を照射して、前記薄膜パターンと同形状の貫通する開口パターンを形成するレーザ光学系と、
前記レーザ光の照射位置に対して前記マスク用部材及び前記基準基板の搬送方向手前側の位置に前記基準パターンを撮影可能に設けられ、前記搬送方向と交差する方向に複数の受光エレメントを一直線に並べて設けた撮像手段と、
前記撮像手段の撮影画像に基づいて前記基準パターンが検出されると、該検出時刻を基準にして前記レーザ光の照射タイミングを制御する制御手段と、
を備えたことを特徴とするマスクの製造装置。 A mask manufacturing apparatus for forming a plurality of thin film patterns having a fixed shape on a substrate by arranging them at a fixed arrangement pitch,
A resin film that transmits visible light to one surface of a metal mask provided with a plurality of openings that penetrate the flat magnetic metal material in a shape larger than that of the thin film pattern corresponding to the formation region of the thin film pattern. The reference substrate is formed on the other surface of the reference substrate in which the film of the mask-bonded mask member is formed by arranging a plurality of reference patterns having the same shape as the thin film pattern on one surface of the transparent substrate at the same arrangement pitch as the thin film pattern. The reference pattern is placed with the reference substrate facing down, and the mask member and the reference substrate that are integrated in close contact with each other so that the reference pattern is positioned in the opening of the metal mask. Conveying means for conveying at a constant speed in the arrangement direction of
A laser optical system for irradiating a portion of the film corresponding to the reference pattern in the opening of the metal mask with a laser beam to form an opening pattern having the same shape as the thin film pattern;
The reference pattern can be photographed at a position on the near side in the transport direction of the mask member and the reference substrate with respect to the irradiation position of the laser light, and a plurality of light receiving elements are aligned in a direction intersecting the transport direction. Imaging means arranged side by side;
Control means for controlling the irradiation timing of the laser light based on the detection time when the reference pattern is detected based on a captured image of the imaging means;
An apparatus for manufacturing a mask, comprising:
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| JP2011255298A JP5517308B2 (en) | 2011-11-22 | 2011-11-22 | Mask manufacturing method, mask and mask manufacturing apparatus |
| KR1020147009752A KR102078888B1 (en) | 2011-09-16 | 2012-09-14 | Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method |
| PCT/JP2012/073617 WO2013039196A1 (en) | 2011-09-16 | 2012-09-14 | Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method |
| CN201280044893.9A CN103797149B (en) | 2011-09-16 | 2012-09-14 | Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method |
| TW101133791A TWI555862B (en) | 2011-09-16 | 2012-09-14 | Evaporation mask, method for manufacturing the same and thinfilm pattern forming method |
| US14/214,428 US9334556B2 (en) | 2011-09-16 | 2014-03-14 | Deposition mask, producing method therefor and forming method for thin film pattern |
| US14/746,727 US9586225B2 (en) | 2011-09-16 | 2015-06-22 | Deposition mask, producing method therefor and forming method for thin film pattern |
| US15/071,125 US9555434B2 (en) | 2011-09-16 | 2016-03-15 | Deposition mask, producing method therefor and forming method for thin film pattern |
| US15/071,116 US9555433B2 (en) | 2011-09-16 | 2016-03-15 | Deposition mask, producing method therefor and forming method for thin film pattern |
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| JP5895539B2 (en) * | 2012-01-12 | 2016-03-30 | 大日本印刷株式会社 | Evaporation mask |
| JP6142386B2 (en) | 2012-12-21 | 2017-06-07 | 株式会社ブイ・テクノロジー | Manufacturing method of vapor deposition mask |
| JP6210355B2 (en) * | 2013-01-11 | 2017-10-11 | 大日本印刷株式会社 | Laminated mask and method for producing laminated mask |
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