JPH07300664A - Production of metal mask and method for regenerating the mask - Google Patents
Production of metal mask and method for regenerating the maskInfo
- Publication number
- JPH07300664A JPH07300664A JP9187594A JP9187594A JPH07300664A JP H07300664 A JPH07300664 A JP H07300664A JP 9187594 A JP9187594 A JP 9187594A JP 9187594 A JP9187594 A JP 9187594A JP H07300664 A JPH07300664 A JP H07300664A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- film
- metal
- metal mask
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は繰り返し再生が可能なメ
タルマスクの製造方法と再生方法に関する。大量の情報
を迅速に処理する必要から、情報処理装置の主体を構成
する半導体集積回路は単位素子の小型化による集積化が
進んでＬＳＩやＶＬＳＩが実用化されており、更にＵＬ
ＳＩが実用化されつゝある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a reproducible metal mask and a method of regenerating it. Since it is necessary to process a large amount of information quickly, semiconductor integrated circuits that form the main body of information processing devices have been integrated by miniaturization of unit elements, and LSI and VLSI have been put into practical use.
SI has been put to practical use.
【０００２】こゝで、半導体集積回路の形成には薄膜形
成技術，写真蝕刻技術（ホトリソグラフィ），不純物元
素注入技術などが使用されるが、光源として紫外線やエ
キシマレーザを使用する写真蝕刻技術にはメタルマスク
が使用されている。Here, thin film forming technology, photolithography technology (photolithography), impurity element implantation technology, etc. are used for forming semiconductor integrated circuits, but the photolithography technology using ultraviolet rays or excimer laser as a light source is used. Uses a metal mask.
【０００３】[0003]
【従来の技術】メタルマスクは厚さが100 μm 程度でス
テンレス鋼，42アロイ（42％Ni・Fe合金），コバール
（29Ni・17Co・Fe合金）などの薄板を選択エッチングし
てパターン形成したもので、真空蒸着やスパッタに当た
り、被処理基板上に選択的に薄膜をパターン形成する手
段として用いられている。2. Description of the Related Art A metal mask having a thickness of about 100 μm is formed by selectively etching a thin plate of stainless steel, 42 alloy (42% Ni / Fe alloy), Kovar (29Ni / 17Co / Fe alloy), etc. In vacuum deposition or sputtering, it is used as a means for selectively patterning a thin film on a substrate to be processed.
【０００４】さて、半導体集積回路はパッケージング技
術の改良により電極端子にはんだボールを使用するフリ
ップチップタイプが多く使用されるようになったが、実
装方法も改良され、多層セラミック回路基板上に複数の
フリップチップタイプの半導体集積回路を搭載し、これ
を取り替え単位として装置を構成するマルチ・チップ・
モジール（Multi-Chip-Module 略称ＭＣＭ）が実用化さ
れつゝある。As for the semiconductor integrated circuit, the flip-chip type using solder balls for the electrode terminals has come to be widely used due to the improvement of the packaging technology, but the mounting method has also been improved so that a plurality of chips can be formed on the multilayer ceramic circuit board. The multi-chip type that incorporates the flip-chip type semiconductor integrated circuit of
A module (Multi-Chip-Module, abbreviated as MCM) has been put into practical use.
【０００５】こゝで、多層回路基板に設けてあるビア
（Via)を通してアルミナなどの基板上にパターン形成さ
れているパッド(Pad) あるいはバンプ(Bump)の数は異常
に多い。例えば、チップの大きさが13 mm 角のＬＳＩを
20個搭載するＭＣＭの場合は、直径が100 μm のパッド
を250 μm ピッチで57625 個配列する必要がある。Here, the number of pads or bumps patterned on the substrate such as alumina through the vias provided in the multilayer circuit board is abnormally large. For example, an LSI with a chip size of 13 mm square
In the case of 20 MCMs, it is necessary to arrange 57625 pads with a diameter of 100 μm at a pitch of 250 μm.
【０００６】そこで、従来はステンレス鋼，42アロイ,
コバールの何れかの金属薄板を用い、写真蝕刻技術を用
いて多数の孔開けを行なってメタルマスクを作り、これ
を使用して薄膜の形成を行なっているが、殆どの場合、
マスクは一回限りで使い捨てられている。すなわち、再
度使用すると薄膜形成材料により孔塞ぎが生じている恐
れがあり、また、マスク上に付着している薄膜形成材料
のみを選択的にエッチングして溶解させることが難し
く、パターン精度を低下させるからである。Therefore, conventionally, stainless steel, 42 alloy,
Using one of Kovar's thin metal plates, a large number of holes are formed by photo-etching technology to create a metal mask, and this is used to form a thin film, but in most cases,
The mask is disposable once. That is, when used again, there is a possibility that the thin film forming material may clog the holes, and it is difficult to selectively etch and dissolve only the thin film forming material adhering to the mask, which lowers the pattern accuracy. Because.
【０００７】[0007]
【発明が解決しようとする課題】真空蒸着やスパッタな
どの薄膜形成技術を使用して被処理基板上に微細パター
ンを形成する際にメタルマスクは一般に使用されている
が、微細パターンの品質を保持する必要から殆どの場
合、使い捨てられている。Although a metal mask is generally used when forming a fine pattern on a substrate to be processed by using a thin film forming technique such as vacuum deposition or sputtering, the quality of the fine pattern is maintained. In most cases it is disposable because of the need to
【０００８】然し、量産工程においてはメタルマスクの
使い捨てはコスト低減の点から好ましくなく、また、製
造効率の向上の見地からも好ましくない。そこで、メタ
ルマスクの再生が課題である。However, in the mass production process, the disposable metal mask is not preferable from the viewpoint of cost reduction and also from the viewpoint of improving the manufacturing efficiency. Therefore, the reproduction of the metal mask is an issue.
【０００９】[0009]
【課題を解決するための手段】上記の課題は金属薄板を
写真蝕刻して所定位置に所定のピッチで孔開けを行って
マスクを形成した後、この金属薄板に耐熱性樹脂よりな
るフィルムを貼着して金属薄板側よりレーザを照射して
アブレーション加工を行い、孔開け位置にあるフィルム
を除去してマスクを作り、このマスクの金属側に被処理
基板を密着させて膜形成を行った後、このマスクより、
フィルムを剥離し、上記の方法によりメタルマスクを再
生させることにより解決することができる。[Means for Solving the Problems] The above problem is that a thin metal plate is photo-etched, holes are formed at predetermined positions at a predetermined pitch to form a mask, and then a film made of a heat-resistant resin is attached to the thin metal plate. After abrading and irradiating a laser from the thin metal plate side to remove the film at the perforated position to create a mask, the substrate to be processed is adhered to the metal side of this mask to form a film From this mask,
This can be solved by peeling off the film and regenerating the metal mask by the above method.
【００１０】[0010]
【作用】本発明はメタルマスクを繰り返して使用するた
めと、アスペクト比を向上する方法としてポリイミドの
ような耐熱性フィルムをメタルマスクの補助手段に使用
するものである。The present invention uses a heat-resistant film such as polyimide as an auxiliary means for a metal mask because the metal mask is repeatedly used and as a method for improving the aspect ratio.
【００１１】こゝで、合成樹脂をマスクとして使用する
場合の必要条件は、 真空蒸着やスパッタのような金属粒子の衝突により
発生する熱により溶解したり変形したりしない材料から
なっていること、 メタルマスクの同様な精度でマスクが形成されてい
ること、 樹脂フィルムがメタルマスクに密着していること、
などである。Here, the necessary condition when using the synthetic resin as a mask is that the material is not melted or deformed by heat generated by collision of metal particles such as vacuum deposition or sputtering, The mask is formed with the same precision as the metal mask, the resin film is in close contact with the metal mask,
And so on.
【００１２】発明者はポリイミドのような耐熱性樹脂は
このような目的に適し、また、片面に粘着剤が塗布して
ある粘着シートが市販されていることに着目した。そし
て、このポリイミドフイルムにアブレーション（溶発，
Ablation) 加工を施すことにより精度の良いパターンを
作るものである。The inventor has noticed that a heat-resistant resin such as polyimide is suitable for such a purpose, and that an adhesive sheet having an adhesive coated on one side is commercially available. Then, this polyimide film is ablated (blown,
Ablation) A pattern with high precision is created by processing.
【００１３】すなわち、通常の有機物は紫外域に強い吸
収があるために、エキシマレーザ光のような強い（〜10
0 ＭＷ／cm2)紫外線パルスを照射すると一瞬のうちに化
学結合が破壊されて表面層が蒸発すると云う性質があ
る。That is, since ordinary organic substances have strong absorption in the ultraviolet region, they are as strong as excimer laser light (~ 10
When irradiated with an ultraviolet pulse of 0 MW / cm 2 ), it has a property that chemical bonds are broken in a moment and the surface layer evaporates.
【００１４】この現象をアブレーションと言い、レーザ
アブレーション加工はこの現象を利用したものである。
一方、レーザ加工法としては、イットニウム・アルミニ
ウム・ガーネット・レーザ（略称ＹＡＧレーザ，波長1.
06μm ) や炭酸ガスレーザ(CO2レーザ, 波長10.6μm )
など赤外線の熱エネルギーを利用するものがあるが、周
囲への熱的損傷が大きく、本発明の目的には適さない。This phenomenon is called ablation, and laser ablation processing makes use of this phenomenon.
On the other hand, as a laser processing method, ytnium aluminum garnet laser (abbreviated as YAG laser, wavelength 1.
06 μm) and carbon dioxide laser (CO 2 laser, wavelength 10.6 μm)
For example, infrared heat energy is used, but thermal damage to the surroundings is large, and it is not suitable for the purpose of the present invention.
【００１５】すなわち、本発明はメタルマスクにポリイ
ミドのような耐熱性樹脂よりなるフィルムを貼り付け、
メタルマスクを通してエキシマレーザを照射してアブレ
ーション加工を行ってマスクを作るもので、アブレーシ
ョン加工による断面はシャープであってパターン精度を
低下させることはない。That is, the present invention attaches a film made of a heat resistant resin such as polyimide to a metal mask,
Excimer laser irradiation is performed through a metal mask to perform ablation processing to form a mask. The cross section obtained by ablation processing is sharp and does not deteriorate pattern accuracy.
【００１６】そして、このマスクのフィルム面を蒸発源
に対向させて真空蒸着またはスパッタを行い、被処理基
板上への薄膜パターン形成処理が終わった後は、メタル
マスクから蒸着物が付着しているフィルムを剥離し、メ
タルマスクを再生させるものである。After the film surface of this mask is opposed to the evaporation source, vacuum deposition or sputtering is performed, and after the thin film pattern forming process on the substrate to be processed is completed, the deposit is attached from the metal mask. The film is peeled off and the metal mask is regenerated.
【００１７】このような方法を使用すると繰り返してメ
タルマスクを使用することができ、また、メタルマスク
単独の場合よりも、フィルムの厚さだけ厚いマスクが形
成できることから、アスペクト比の大きなマスクを形成
することができる。When such a method is used, the metal mask can be repeatedly used, and since a mask thicker than the metal mask alone can be formed by the film thickness, a mask having a large aspect ratio can be formed. can do.
【００１８】[0018]
【実施例】図１は本発明の実施法を示す実施例の断面図
であり、まず、直径４インチで厚さが100 μm のコバー
ルよりなる金属薄板１に写真蝕刻技術を使用して直径10
0μm の孔２が250 μm ピッチで57624 個マトリックス
状に孔開されているメタルマスク３を形成した。こゝ
で、孔２は大きさが13 mm 角のＬＳＩチップを20個搭載
するためのパッド形成用である。（以上同図Ａ） 次に、厚さが50μm でポリイミドよりなる粘着性をもつ
フィルム（市販名カプトンテープ）４をメタルマスク３
に貼着した。（以上同図Ｂ） 次に、図示を省略したが、フィルム４の裏面にフェライ
ト磁石を配置し、メタルマスク３をフィルム４に密着さ
せた状態でメタルマスク３の側から弗化クリプトン（Kr
F)エキシマレーザ６を照射し、レーザアレーション加工
を行なった。加工条件は発振波長：248nm,出力：250mJ/
パルス（パルス幅16ns),露光強度：１パルス当たり1.4
J/cm2 である。( 以上同図Ｃ） 次に、このようにして形成したマスク８のメタルマスク
３の側に被処理基板（セラミック多層回路基板）９のビ
アを孔２に対向させて正確に位置決めすると共に、背後
にフェライト磁石を配置し、マスク８を密着させた状態
で、クローム（Cr) ，ニッケル（Ni),金(Au)をそれぞれ
約1000Åずつ連続的に蒸着させてパッドを形成した。(
以上同図Ｄ） 次に、被処理基板９よりマスク８を外した後、フィルム
４を取り除いてメタルマスク３を得たが、損傷しておら
ず、再使用が可能であった。（以上同図Ｅ）FIG. 1 is a cross-sectional view of an embodiment showing the method of practicing the present invention. First, a metal thin plate 1 made of Kovar having a diameter of 4 inches and a thickness of 100 μm is used to make a diameter 10
A metal mask 3 was formed in which 57,024 0 μm holes 2 were opened in a matrix form at a pitch of 250 μm. Here, the holes 2 are for forming pads for mounting 20 LSI chips each having a size of 13 mm square. (Above figure A) Next, the adhesive film (commercial name Kapton tape) 4 made of polyimide having a thickness of 50 μm is attached to the metal mask 3
I stuck it on. Although not shown, a ferrite magnet is arranged on the back surface of the film 4 and the metal mask 3 is brought into close contact with the film 4 from the side of the metal mask 3 to the krypton fluoride (Kr).
F) Excimer laser 6 was irradiated to perform laser alation processing. Processing conditions are oscillation wavelength: 248nm, output: 250mJ /
Pulse (pulse width 16 ns), exposure intensity: 1.4 per pulse
It is J / cm 2 . (As shown in FIG. 6C) Next, the via of the substrate (ceramic multilayer circuit board) 9 to be processed is accurately positioned by facing the hole 2 on the side of the metal mask 3 of the mask 8 thus formed, and A ferrite magnet was placed on the substrate, and with the mask 8 in close contact with it, chrome (Cr), nickel (Ni), and gold (Au) were each continuously vapor-deposited in an amount of about 1000 Å to form a pad. (
As described above, the same figure D) Next, after removing the mask 8 from the substrate 9 to be processed, the film 4 was removed to obtain the metal mask 3, but it was not damaged and could be reused. (The above figure E)
【００１９】[0019]
【発明の効果】本発明の使用により、従来、使い捨てら
れていたメタルマスクの再使用が可能となり、これによ
りＭＣＭ製造工程におけるコスト低減が可能となる。As described above, the use of the present invention makes it possible to reuse a metal mask that has been conventionally thrown away, and thereby reduce the cost in the MCM manufacturing process.
【図１】 本発明の実施法を示す断面図である。FIG. 1 is a cross-sectional view showing a method for carrying out the present invention.
２ 孔 ３ メタルマスク ４ フィルム ６ レーザ ９ 被処理基板 2 holes 3 metal mask 4 film 6 laser 9 substrate to be processed
Claims (2)
に所定のピッチで孔（２）を開けてメタルマスク（３）
を形成した後、該金属薄板（１）に耐熱性樹脂よりなる
フィルム（４）を貼着し、該金属薄板（１）側よりレー
ザ（６）を照射してアブレーション加工を行い、孔
（２）の位置にあるフィルム（４）を分解蒸発させるこ
とを特徴とするメタルマスクの製造方法。1. A metal mask (3) in which a thin metal plate (1) is photo-etched to form holes (2) at predetermined positions at predetermined pitches.
After forming the metal thin plate (1), a film (4) made of a heat-resistant resin is attached to the thin metal plate (1), and a laser (6) is irradiated from the side of the thin metal plate (1) to perform ablation processing to form holes (2 A method for producing a metal mask, characterized in that the film (4) at the position (4) is decomposed and evaporated.
（９）を密着させて該被処理基板（９）上に選択的に膜
形成を行った後、該マスク（８）より、フィルム（４）
を剥離し、請求項１記載の方法によりメタルマスク
（３）を再生させることを特徴とするメタルマスクの再
生方法。2. A substrate (9) to be processed is brought into close contact with the metal side of the mask (8) to selectively form a film on the substrate (9) to be processed, and then the mask (8) Film (4)
A method for reclaiming a metal mask, characterized in that the metal mask is peeled off and the metal mask (3) is regenerated by the method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9187594A JPH07300664A (en) | 1994-04-28 | 1994-04-28 | Production of metal mask and method for regenerating the mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9187594A JPH07300664A (en) | 1994-04-28 | 1994-04-28 | Production of metal mask and method for regenerating the mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07300664A true JPH07300664A (en) | 1995-11-14 |
Family
ID=14038740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9187594A Withdrawn JPH07300664A (en) | 1994-04-28 | 1994-04-28 | Production of metal mask and method for regenerating the mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07300664A (en) |
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-
1994
- 1994-04-28 JP JP9187594A patent/JPH07300664A/en not_active Withdrawn
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