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JPH1070151A - Method and apparatus for arraying conductive particle - Google Patents

Method and apparatus for arraying conductive particle

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Publication number
JPH1070151A
JPH1070151A JP24265396A JP24265396A JPH1070151A JP H1070151 A JPH1070151 A JP H1070151A JP 24265396 A JP24265396 A JP 24265396A JP 24265396 A JP24265396 A JP 24265396A JP H1070151 A JPH1070151 A JP H1070151A
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conductive
particles
arraying
method
electrodes
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JP24265396A
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Japanese (ja)
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Yasushi Yamada
▲泰▼史 山田
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Ricoh Co Ltd
株式会社リコー
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742Apparatus for manufacturing bump connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/11001Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11003Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus for arraying particles capable of arraying conductive particles on an electrode at high speed and easily, without damaging the particles and without using a method which requires precision work or control of a magnetic film, a metal mask, and so on. SOLUTION: Relating to a conductive particle arraying method for arraying conductive particles on electrodes, and performing the connection between the electrodes through the above-mentioned conductive particles, conductive particles 6 sticking on a transparent film 4 by a pressure sensitive adhesive 5 are selectively exfoliated by emitting a laser beam 7 on the adhesive surface of the transparent film 4, and the exfoliated conductive particles 6 are transferred and arrayed on the electrodes 3. And, it does not matter if the conductive particles 6 are exfoliated by laser abrasion forming particle patterns on the film, and these particle patterns are transferred and arrayed on the electrodes 3. And a particle arraying apparatus (not shown by a figure) for transferring and arraying conductive particles onto the electrodes provided on boards to be transferred continuously, by the use of the above-mentioned arraying method is constituted.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、レーザによる粒子転写を用いた粒子配列実装方法で、半導体装置,液晶ディスプレイ,ICカード等の実装方法に関わり、より詳細には、導電性粒子を用いた電子部品の実装方法に関するもので、例えば、電極バンプ形成,メッキ等の分野に応用できるものである。 BACKGROUND OF THE INVENTION The present invention is a particle transfer particle array mounting method using by a laser, a semiconductor device, relates to a liquid crystal display, mounting method such as an IC card, and more particularly, using the conductive particles relates mounting method of electronic components, for example, electrode bumps formed are those that can be applied in fields such as plating.

【0002】 [0002]

【従来の技術】導電粒子を用いた実装方法は、従来より種々提案されている。 Mounting method using the Related Art conductive particles have been proposed conventionally. 例えば、メタルマスク等を用いて配列化した導電粒子をSiゴム等で粘着し、金属電極上に転写する方法や、磁性体を用い選択的に導電粒子を形成する方法等が知られている。 For example, the conductive particles are arranged by using a metal mask or the like sticking at Si rubber, a method of transferring on the metal electrode, and a method of forming a selectively conductive particles using the magnetic material is known.

【0003】 [0003]

【発明が解決しようとする課題】従来の導電粒子を用いた電極間の接続方法では、導電粒子のパタン形成をメタルマスク等を用いて導電粒子の配列を行っていた。 The connection method between using INVENTION Problems to be Solved conventional conductive particles electrode, the pattern formation of the conductive particles were subjected to sequence the conductive particles using a metal mask or the like. 即ち、マスク上の導電粒子をスキージ等で送り、マスクの穴部のみに導電粒子を配置し、導電粒子パタンを形成させるようにしていた。 That sends the conductive particles on the mask with a squeegee or the like, the conductive particles disposed only in the hole of the mask, have so as to form a conductive particle pattern. しかしながら、この導電粒子配列方法では、電極パタン上に直接導電粒子を形成するのは困難で、導電粒子パタンと電極の位置合わせが非常に難しいという問題があった。 However, in this conductive particle array method, it is difficult to directly form the conductive particles on the electrode pattern, the alignment of the conductive particles pattern and the electrode has a problem that it is very difficult. また、このような方法では、 In addition, in such a method,
導電粒子がマスク上をスキージで送られるため、導電粒子表面の金属剥離や割れ等の発生が問題となっていた。 Since the conductive particles are sent over a mask with a squeegee, the occurrence of metal peeling or cracks of the conductive particle surfaces is a problem.
さらに、微細な金属マスクの作成が必要とされるため、 Moreover, since the creation of the fine metal mask is needed,
これが今後の微細化にとって障害となっていた。 This has been an obstacle for the future of miniaturization. また、 Also,
磁性膜等で吸着転写する方法では、磁力の制御が困難であり、パタン化した磁性膜を作成する場合、加工上高度な技術や装置が要求されるという問題があった。 In the method of adsorbing transcribed in the magnetic film or the like, it is difficult to control the magnetic force, to create a patterned and magnetic films, working on advanced technology and equipment is a problem that is required.

【0004】本発明は、上述のような実情に鑑みてなされたもので、金属マスク法では形成と制御が困難な微細パタンを、粒子を破損することなく容易に電極上に形成することができ、さらに、磁性膜等の高度な加工を要する治具を使わず、高速に電極上への導電粒子配列の形成を行うことができる粒子配列方法及びその装置を提供することをその解決すべき課題とする。 [0004] The present invention has been made in view of the circumstances as described above, the hard fine pattern and control formation of a metal mask method, it can be easily formed on the electrode without damaging the particles , issues further without using jigs which require sophisticated processing such as a magnetic film, to be the solution to provide a particle array method and device it is possible to form the conductive particles sequences into high speed electrode on to.

【0005】 [0005]

【課題を解決するための手段】請求項1の発明は、電極上に導電性粒子を配列し、前記導電性粒子を介して電極間の接続を行なうための前記導電性粒子の配列方法において、透明フィルム上に粘着剤を介して粘着させた前記導電性粒子を前記透明フィルムの粘着面にレーザ光を照射することによって選択的に剥離し、剥離した前記導電性粒子を電極上に転写し、配列させるようにしたものである。 The invention of claim 1 [SUMMARY OF] arranges conductive particles on the electrode, the method of arranging the conductive particles for connection between the electrodes via the conductive particles, selectively peeled by irradiating a laser beam on the adhesive surface of the conductive particles the transparent film is adhered through an adhesive onto a transparent film, and transferring the peeled the conductive particles on the electrode, it is obtained so as to be arranged.

【0006】請求項2の発明は、電極上に導電性粒子を配列し、前記導電性粒子を介して電極間の接続を行なうための前記導電性粒子の配列方法において、フィルム上に粘着剤を介して粘着させた前記導電性粒子を前記フィルムの粘着面にレーザ光を照射することにより生じるレーザアブレーション作用により選択的に剥離し、前記フィルム上に残留した前記導電性粒子を電極上に転写し、 [0006] The second aspect of the present invention is to arrange the conductive particles on the electrode, the method of arranging the conductive particles for connection between the electrodes through the conductive particles, an adhesive on the film through selectively removed by laser ablation effects caused by irradiating a laser beam to the conductive particles is adhered to the adhesive surface of the film, and transferring the conductive particles remaining on the film on the electrode ,
配列させるようにしたものである。 It is obtained so as to be arranged.

【0007】請求項3の発明は、請求項2記載の粒子配列方法において、減圧雰囲気下でレーザ光の照射を行うようにしたものである。 [0007] A third aspect of the present invention, in the particle array method according to claim 2, in which to perform the irradiation of the laser beam in a reduced pressure atmosphere.

【0008】請求項4の発明は、請求項2記載の粒子配列方法において、He雰囲気下あるいはHe吹き付け下でレーザ光の照射を行うようにしたものである。 [0008] The invention of claim 4, in which the particle array method according to claim 2, and to perform the irradiation of the laser beam under blowing or under He He atmosphere.

【0009】請求項5の発明は、請求項1記載の粒子配列方法において、前記レーザ光が紫外光であり、前記導電性粒子の剥離が前記レーザ光を照射することにより生じるレーザアブレーション作用によりなされるようにしたものである。 [0009] A fifth aspect of the present invention, the particle array method of claim 1, wherein the laser beam is ultraviolet light, made by laser ablation effects caused by the peeling of the conductive particles is irradiated with the laser beam in which was to so that.

【0010】請求項6の発明は、レーザ光に対して透明であり、少なくとも一部に粘着性が付与されている透明フィルムと、該透明フィルムを連続的に供給するフィルム供給装置と、前記透明フィルム上に導電粒子を連続的に供給する導電粒子供給装置と、電極に同期させてレーザ光を請求項1または5記載の粒子配列方法に従って前記透明粘着フィルムの粘着面に照射するレーザ装置とを備えるようにしたものである。 [0010] The invention of claim 6 is transparent to laser light, a transparent film adhesive to at least a part of which is applied, and continuously feeding the film supply device transparent film, the transparent film and continuously supplying conductive particle feeder conductive particles on and a laser device for irradiating the adhesive surface of the transparent adhesive film in synchronism with the electrodes in accordance with the particle arrangement method according to claim 1 or 5, wherein the laser beam it is obtained by way provided.

【0011】請求項7の発明は、少なくとも一部に粘着性が付与されているフィルムと、該フィルムを連続的に供給するフィルム供給装置と、前記フィルム上に導電粒子を連続的に供給する導電粒子供給装置と、電極に同期させてレーザ光を請求項2ないし4いずれか1記載の粒子配列方法に従って前記粘着フィルムの粘着面に照射するレーザ装置とを備えるようにしたものである。 [0011] The invention of claim 7, a film adhesive to at least a part of which is applied, and continuously feeding film feeding device the film is continuously fed conductive conductive particles onto said film a particle feeder, is obtained by so and a laser device for irradiating the adhesive surface of the adhesive film according to grain arrangement method of claims 2 laser beam in synchronization with the electrode 4 or 1, wherein.

【0012】請求項8の発明は、請求項6または7記載の粒子配列装置において、前記レーザ装置に使用されるレーザ光がエキシマレーザであるようにしたものである。 [0012] The invention of claim 8 is the particle array according to claim 6 or 7, wherein the laser beam used in the laser device is obtained as is an excimer laser.

【0013】 [0013]

【発明の実施の形態】本発明による方式では、レーザ光を吸収した粘着部の急激な体積増加によって導電粒子がフィルムから剥離する作用を利用しているため、導電粒子の非常に高速な転写が可能となる。 In method according to the embodiment of the present invention, since the conductive particles by rapid volume increase of the adhesive portion that has absorbed the laser beam is utilizing an action of peeling from the film, a very fast transfer of the conductive particles It can become. 特に、光化学的な反応であるレーザアブレーション作用を利用した場合、 In particular, when using a laser ablation working is a photochemical reaction,
粘着部と導電粒子との接合部はレーザ光を照射した瞬間に解離させることも可能であり、熱プロセスと比較して高速な処理が可能となる。 Joint between the adhesive portion and the conductive particles it is also possible to dissociate the moment the laser irradiation, high-speed processing is possible as compared with the thermal process.

【0014】レーザ光は、レンズ等の光学系で容易に集光,整形可能であるため、高速に精度よく導電粒子パタンを形成でき、また、金属マスクやパタン化された磁性膜等を用いる必要がないため、高精度な任意パタンを形成することが可能である。 [0014] The laser light is readily condensing optical system such as a lens, since it is possible shaping, high speed can be formed accurately conductive particles pattern, also necessary to use a metal mask or patterned by magnetic film, because there is no, it is possible to form a high-precision arbitrary pattern.

【0015】レーザアブレーション作用は、レーザ光を吸収した物質の急激な体積増加によるもので、物質のレーザ吸収効率がアブレーション作用に大きく影響する。 [0015] Laser ablation effect is due to the rapid increase in volume of the substance has absorbed the laser beam, the laser absorption efficiency of the material greatly affects the ablation effect.
一般に、高分子物質では紫外部の光の吸収効率が高く、 In general, high absorption efficiency of light ultraviolet is a polymer material,
効率的にアブレーションを起こすことが知られている。 It has been known to cause the efficient ablation.
このようなアブレーション作用においては、低圧雰囲気下では、アブレーションにより解離された粒子は大きな運動エネルギーを持つため、レーザ被照射部から遠く飛散し、またHe雰囲気下では、アブレーション時の衝撃波の形成がより広い領域で起きるため、レーザ被照射部周辺への粒子の再付着が少ないことが知られている。 In such ablation effects, the low-pressure atmosphere, since particles dissociated by ablation with high kinetic energy, scattered far from the laser irradiated portion, also under He atmosphere, more the formation of shock waves at the time of ablation because that occurs in a wide area, it is known that reattachment of the particles to the laser irradiated portion around less.

【0016】以下に本発明が適用される粒子配列方法の実施形態を添付された図面を参照して具体的に説明する。 [0016] The present invention is specifically described with reference to embodiments and accompanying drawings of the applied particle array method below. まず、レーザ光を照射することにより剥離した導電粒子の転写及び配列方法の実施形態を図1を参照して説明する。 First, an embodiment of a transcription and arrangement method of exfoliated conductive particles will be described with reference to FIG by irradiating a laser beam. 図1は、本発明による粒子配列方法の一実施形態を説明するための模式図で、図中、1は基板、2は接着剤層、3は電極、4は透明フィルム、5は粘着剤層、 Figure 1 is a schematic diagram for explaining one embodiment of a particle array method according to the invention, in FIG, 1 is a substrate, 2 is an adhesive layer, 3 is an electrode, the transparent film 4, the 5 adhesive layer ,
6は導電粒子、7はレーザ光である。 The conductive particles 6, 7 are laser beam. 接着剤層2を表面の一部に設けた電極3を基板1上に用意し、その上方の透明フィルム4表面には粘着剤層5を介して粘着された導電粒子6を配置する。 The electrode 3 provided with the adhesive layer 2 on the part of the surface is prepared on the substrate 1, the transparent film 4 the surface of the upper placing conductive particles 6 which are adhesive through an adhesive layer 5. その後、電極3上で導電粒子6 Thereafter, the conductive particles 6 on the electrode 3
を転写・配列しようとする場所にフィルムの粘着面の背面側からレーザ光7の照射を行うことにより、照射された領域の導電粒子6を粘着剤層5から剥離させ、この剥離した導電粒子を電極3上にパタンとして形成させることができる。 By performing the irradiation of the laser light beam 7 from the rear side of the adhesive surface place on the film to be transferred, sequences, the conductive particles 6 of the illuminated area is peeled from the adhesive layer 5, the exfoliated conductive particles it can be formed as a pattern on the electrode 3.

【0017】次いで、レーザアブレーション作用を利用してフィルム上でパタン化した導電粒子の転写及び配列方法の実施形態を図2を参照して説明する。 [0017] Next, an embodiment of transcription and arrangement method of laser ablation action was patterned on the film by using a conductive particle with reference to FIG. 図2は、本発明による粒子配列方法の他の実施形態を説明するための模式図で、図中、8は粘着フィルムで、その他、図1 Figure 2 is a schematic diagram for explaining another embodiment of a particle array method according to the invention, in the figure 8 is a pressure-sensitive film, other, FIG. 1
と同じ作用をする部分には図1と同じ符号が付してある。 The portion of the same effects as are denoted by the same reference numerals as FIG. まず、粘着フィルム8上に導電粒子6を粘着させるが、このときの粘着剤は、レーザ光によりアブレーションが可能である材料を使用する。 First, to adhere the conductive particles 6 on the adhesive film 8, an adhesive in this case, using the ablation are possible material by a laser beam. その後、レーザ光7を粘着面に照射することで、照射された領域に生じるレーザアブレーション作用により、粘着剤とともに導電粒子6をフィルム上から剥離する。 Then, by irradiating the laser beam 7 on the adhesive surface, by laser ablation action occurring irradiated areas, peeling the conductive particles 6 with adhesive from the film. 粘着フィルム8上では残留した導電粒子6によりパタンが形成され、この導電粒子パタンを電極3上に転写することにより、この電極3 Is on the adhesive film 8 pattern is formed by conductive particles 6 remaining, by transferring the conductive particles pattern on the electrode 3, the electrode 3
の表面に導電粒子の配列パタンを形成することができる。 It can be on the surface of forming the array pattern of the conductive particles.

【0018】次いで、レーザ光を照射することにより連続的に導電粒子を電極上に転写及び配列させる粒子配列装置の実施形態を図3を参照して説明する。 [0018] Next, an embodiment of a particle array apparatus for transferring and arranging the continuous conductive particles on the electrode will be described with reference to FIG by irradiating a laser beam. 図3は、本発明による粒子配列装置の一実施形態を説明するための模式図で、図中、9は回転ドラム、10は導電粒子供給装置、11は導電粒子回収装置、12は基板供給装置で、その他、図1と同じ作用をする部分には、図1と同じ符号が付してある。 Figure 3 is a schematic diagram for explaining one embodiment of a particle array device according to the present invention, in the figure, the rotary drum 9, 10 conductive particle feeder, 11 is conductive particle recovery device, 12 a substrate feed device in other, portions of the same acts as FIG. 1 are denoted by the same reference numerals as in FIG. この場合、導電粒子6は、回転ドラム9より繰り出される透明フィルム4の粘着側表面に導電粒子6を連続的に供給していく導電粒子供給装置1 In this case, the conductive particles 6, the conductive particles 6 on the adhesive surface was continuously fed gradually conductive particle feeder of the transparent film 4 fed out of the rotary drum 9 1
0と、後方で残った導電粒子6を取り除く導電粒子回収装置11により制御される。 0, is controlled by the conductive particles recovery device 11 to remove the conductive particles 6 remaining behind. このように連続的に供給される導電粒子6は、所望の電極3の上方でレーザ光7を照射され、照射領域の導電粒子6が透明フィルム4から剥離し、電極3の表面に転写・配列される。 Conductive particles 6 is thus continuously supplied, it is irradiated with a laser beam 7 above the desired electrode 3, separated from the conductive particles 6 transparent film 4 in the irradiated region, transcription-arranged on the surface of the electrode 3 It is. この電極3 The electrode 3
を備える基板1を連続的に供給する基板供給装置12を用いることにより、導電粒子6の連続的な電極3への転写・配列を可能とする装置を構成する。 The use of continuously feeding a substrate supply unit 12 to the substrate 1 having the form a device capable of transcription and sequences to continuous electrodes 3 of the conductive particles 6.

【0019】次いで、レーザアブレーション作用を用いて連続的に導電粒子を電極上に転写及び配列させる粒子配列装置の実施形態を図4を参照して説明する。 [0019] Then, continuously embodiments of transcription and particle array device for arranging conductive particles on the electrode with reference to FIG. 4 will be described with reference to laser ablation action. 図4 Figure 4
は、本発明による粒子配列装置の他の実施形態を説明するための模式図で、図中、13はミラー、14は転写用押しつけ装置で、その他、図3と同じ作用をする部分には、図3と同じ符号が付してある。 Is a schematic diagram for explaining another embodiment of a particle array device according to the present invention, in the figure, 13 is a mirror, 14 is a transfer pressing apparatus, other, portions of the same functions as in FIG. 3, the same reference numerals as in FIG. 3 are denoted. 上述の図3に示した実施形態と同様に、導電粒子6は、連続的にフィルム8 Similar to the embodiment shown in FIG. 3 described above, the conductive particles 6 is continuously film 8
の粘着側表面に供給される。 Is the supply to the adhesive surface. この導電粒子6にミラー1 Mirror 1 This conductive particles 6
3等で整形されたレーザ光を照射し、照射された領域の導電粒子6を剥離してフィルム8に残留した導電粒子6 Irradiating a laser beam shaped by three or the like, the conductive particles 6 remaining on the peeled conductive particles 6 of the illuminated area film 8
によりパタンを形成させる。 To form a pattern by. その後、例えばピストンのような押しつけ装置14でフィルム8を電極3へ向かって押し付け、前記残留した導電粒子6を電極3の表面の接着剤層2に接着させることにより、導電粒子6を転写・配列させる。 Then, for example, pressed in pressing device 14, such as a piston towards the film 8 to the electrode 3, by adhering the conductive particles 6 was the remaining adhesive layer 2 on the surface of the electrode 3, transferring and arranging the conductive particles 6 make. また、さらに、電極3を有する基板1を連続的に供給する基板供給装置12を用いることにより、導電粒子6の連続的な電極3への転写を可能とする装置を構成する。 Still further, by using a continuously fed board supply device 12 to the substrate 1 having electrodes 3, it constitutes a device which enables the transfer to the continuous electrode 3 of the conductive particles 6.

【0020】 [0020]

【発明の効果】 【Effect of the invention】

請求項1の発明の効果:透明フィルムの少なくとも一部に粘着性を付与し、導電粒子を表面に粘着させ、レーザ光をフィルムの粘着面の背面側から照射することにより、レーザ照射領域の導電粒子のみが選択的にフィルムから剥離する。 Effect of the invention of claim 1: the tackiness imparted to at least a portion of the transparent film, the electrically conductive particles is adhered on the surface, by irradiating the laser beam from the rear side of the adhesive surface of the film, the conductive laser irradiation region only particles separated from selectively film. このような方法により、高速で高精度な粒子転写が可能となる。 Such method enables highly accurate particle transfer at high speed. 特に、粒子配列及び電極への接続プロセスを一括して行うため、作業の簡略化,高速化が可能となる。 In particular, in order to perform collectively the process of connecting to the particle array and electrodes, thereby simplifying, speeding the work. また、3次元的凹凸を持つ金属パタン上にも容易に粒子を配列することが可能となる。 Further, it is possible to arrange easily the particles in the metal pattern having a three-dimensional irregularities. さらに、 further,
粒子のパタン形成をマスクなしに行うことができ、プロセスの簡略化が可能となる。 It can perform pattern formation of particles without a mask, thereby simplifying the process.

【0021】請求項2の発明の効果:工程の初期にレーザアブレーション作用を用いることにより必要としない導電粒子を除去して、導電粒子のパタンをフィルム上に形成し、このパタン化した導電粒子を転写・配列させるため、フィルムの透明性や耐熱性の必要がなく、粒子の転写・配列作業を行う前にパタンを準備しておくことができ、より高速な処理を行うことが可能となる。 [0021] The invention of claim 2 Effect: step initially by removing the conductive particles does not require the use of laser ablation action of the pattern of the conductive particles is formed on the film, the patterned with conductive particles for transferring and arrangements, without the need for transparency and heat resistance of the film, can prepare a pattern before performing transcription-sequence operations of the particles, it is possible to perform faster processing. また、 Also,
パタン形成をマスクなしに行うことができ、プロセスの簡略化が可能となる。 It can be performed pattern formed without a mask, thereby simplifying the process.

【0022】請求項3の発明の効果:請求項2の発明の効果に加えて、レーザアブレーション時の雰囲気を減圧することにより飛散物が吸引され、アブレーションの際に問題となる飛散粒子の被照射部周囲への再付着を軽減することができる。 [0022] 3. Effect of the Invention: In addition to the effect of the invention of claim 2, the debris is sucked by vacuum atmosphere during laser ablation, the irradiation of the scattered particles from causing problems during ablation it is possible to reduce the redeposition of the parts around.

【0023】請求項4の発明の効果:請求項2の発明の効果に加えて、レーザアブレーション時の雰囲気をHe The invention of claim 4 Effect: In addition to the effect of the invention of claim 2, the atmosphere during laser ablation He
雰囲気とすることで、アブレーションの際の飛散粒子がより遠方にまで飛散し、問題となる飛散粒子のレーザ被照射部周囲への再付着を軽減することができる。 With the atmosphere, it is possible to scatter particles during ablation is more scattered to a distant, to reduce the redeposition of the laser irradiated portion around the scattering particles in question.

【0024】請求項5の発明の効果:請求項1の発明の効果に加えて、特にレーザアブレーション作用を用いることにより、通常のレーザ熱作用による処理に比較して、より高速な処理が可能となる。 The invention of claim 5 Effect: In addition to the effect of the invention of claim 1, in particular by using a laser ablation action, compared to treatment with typical laser thermal effects, enabling faster processing Become.

【0025】請求項6の発明の効果:請求項1または5 The effect of the invention of claim 6: claim 1 or 5
の発明の効果に加えて、フィルム送り機構と導電粒子供給機構を備え、請求項1または5記載の粒子配列方法に従って導電粒子の配列を行うようにすることにより、パタン化した導電粒子を連続的に供給することが可能となり、高速な処理能力を有する粒子配列装置が得られる。 In addition to the effect of the invention, includes a film feeding mechanism and the conductive particle supply mechanism, by to perform an array of conductive particles according to particle arrangement method according to claim 1 or 5, wherein, continuously patterned with conductive particles it is possible to supply to a particle array device is obtained having a high-speed processing capability.

【0026】請求項7の発明の効果:請求項2ないし4 The invention of claim 7 Effect: to claims 2 4
のいずれか1の発明の効果に加えて、フィルム送り機構と導電粒子供給機構を備え、請求項2ないし4のいずれか1記載の粒子配列方法に従って導電粒子の配列を行うようにすることにより、パタン化した導電粒子を連続的に供給することが可能となり、高速な処理能力を有する粒子配列装置が得られる。 In addition to the effect of any one of the invention, it includes a film feeding mechanism and the conductive particle supply mechanism, by to perform an array of conductive particles according to particle arrangement method as claimed in any one of claims 2 to 4, the patterned with conductive particles it is possible to continuously supply a particle array device is obtained having a high-speed processing capability.

【0027】請求項8の発明の効果:請求項6または7 The effect of the invention of claim 8: Claim 6 or 7
の発明の効果に加えて、レーザ装置に使用されるレーザ光をエキシマレーザとすることで、アブレーション作用を利用する場合には、アブレーション可能な被照射材料の選択肢を多くでき、またパルス当りのエネルギーが大きいため、一度に大面積のパタン化が可能となる。 In addition to the effect of the invention, the laser beam used in the laser apparatus is set to excimer laser, when using the ablation effect can many choices ablatable the irradiated material, also per pulse energy is large, a pattern of large area is possible at a time.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 本発明による粒子配列方法の一実施形態を説明するための模式図である。 1 is a schematic diagram for explaining an embodiment of a particle array method according to the invention.

【図2】 本発明による粒子配列方法の他の実施形態を説明するための模式図である。 2 is a schematic diagram for explaining another embodiment of a particle array method according to the invention.

【図3】 本発明による粒子配列装置の一実施形態を説明するための模式図である。 3 is a schematic diagram for explaining an embodiment of a particle array device according to the present invention.

【図4】 本発明による粒子配列装置の他の実施形態を説明するための模式図である。 Is a schematic diagram for explaining another embodiment of a particle array device according to the invention; FIG.

【符号の説明】 DESCRIPTION OF SYMBOLS

1…基板、2…接着剤層、3…電極、4…透明フィルム、5…粘着剤層、6…導電粒子、7…レーザ光、8… 1 ... substrate, 2 ... adhesive layer, 3 ... electrode 4 ... transparent film, 5 ... adhesive layer, 6 ... conductive particles 7 ... laser light, 8 ...
粘着性フィルム、9…回転ドラム、10…導電粒子供給装置、11…導電粒子回収装置、12…基板供給装置、 Adhesive film, 9 ... rotary drum, 10 ... conductive particle feeder, 11 ... conductive particle recovery device, 12 ... substrate supply device,
13…ミラー、14…転写用押しつけ装置。 13 ... mirror, 14 ... transfer pressing device.

Claims (8)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 電極上に導電性粒子を配列し、前記導電性粒子を介して電極間の接続を行なうための前記導電性粒子の配列方法において、透明フィルム上に粘着剤を介して粘着させた前記導電性粒子を前記透明フィルムの粘着面にレーザ光を照射することによって選択的に剥離し、剥離した前記導電性粒子を電極上に転写し、配列させるようにすることを特徴とする粒子配列方法。 [Claim 1] arranged conductive particles on the electrode, the method of arranging the conductive particles for connection between the electrodes through the conductive particles, is adhered through an adhesive onto a transparent film particles selectively peeled by irradiating a laser beam to the conductive particles to the adhesive surface of the transparent film, the peeled the conductive particles were transferred on the electrode, characterized in that so as to sequence arrangement method.
  2. 【請求項2】 電極上に導電性粒子を配列し、前記導電性粒子を介して電極間の接続を行なうための前記導電性粒子の配列方法において、フィルム上に粘着剤を介して粘着させた前記導電性粒子を前記フィルムの粘着面にレーザ光を照射することにより生じるレーザアブレーション作用により選択的に剥離し、前記フィルム上に残留した前記導電性粒子を電極上に転写し、配列させるようにすることを特徴とする粒子配列方法。 2. A sequence conductive particles on the electrode, the method of arranging the conductive particles for connection between the electrodes through the conductive particles were adhered with an adhesive on the film the conductive particles selectively removed by laser ablation effects caused by irradiating a laser beam onto the adhesive surface of the film, and transferring the conductive particles remaining on the film on the electrode, so as to be arranged particle array method characterized by.
  3. 【請求項3】 請求項2記載の粒子配列方法において、 3. A grain arrangement method according to claim 2,
    減圧雰囲気下でレーザ光の照射を行うようにすることを特徴とする粒子配列方法。 Particle array method characterized by to perform the irradiation of the laser beam in a reduced pressure atmosphere.
  4. 【請求項4】 請求項2記載の粒子配列方法において、 4. A particle arrangement method according to claim 2,
    He雰囲気下あるいはHe吹き付け下でレーザ光の照射を行うようにすることを特徴とする粒子配列方法。 Particle array method characterized by to perform the irradiation of the laser beam under blowing or under He He atmosphere.
  5. 【請求項5】 請求項1記載の粒子配列方法において、 5. A particle arrangement method according to claim 1, wherein,
    前記レーザ光が紫外光であり、前記導電性粒子の剥離が前記レーザ光を照射することにより生じるレーザアブレーション作用によりなされることを特徴とする粒子配列方法。 The laser light is ultraviolet light, a particle array wherein the peeling of the conductive particles are made by laser ablation effects caused by irradiating the laser beam.
  6. 【請求項6】 レーザ光に対して透明であり、少なくとも一部に粘着性が付与されている透明フィルムと、該透明フィルムを連続的に供給するフィルム供給装置と、前記透明フィルム上に導電粒子を連続的に供給する導電粒子供給装置と、電極に同期させてレーザ光を請求項1または5記載の粒子配列方法に従って前記透明粘着フィルムの粘着面に照射するレーザ装置とを備えるようにしたことを特徴とする電極上への粒子配列装置。 6. is transparent to laser light, at least a transparent film adhesive is applied to a part, and continuously feeding film feeding device The clear film, conductive particles on the transparent film it has to include a laser device for irradiating the adhesive surface of the transparent adhesive film according to the continuously fed conductive particle feeder, a particle array method of claim 1 or 5, wherein the by-locked laser beam on the electrode particle array device onto the electrode, characterized in.
  7. 【請求項7】 少なくとも一部に粘着性が付与されているフィルムと、該フィルムを連続的に供給するフィルム供給装置と、前記フィルム上に導電粒子を連続的に供給する導電粒子供給装置と、電極に同期させてレーザ光を請求項2ないし4いずれか1記載の粒子配列方法に従って前記粘着フィルムの粘着面に照射するレーザ装置とを備えるようにしたことを特徴とする電極上への粒子配列装置。 7. A film adhesive to at least a part of which is applied, and continuously feeding film feeding device the film, and continuously fed conductive particle feeder conductive particles onto the film, particle array of in synchronism with the electrode on the electrode, characterized in that as and a laser device for irradiating the adhesive surface of the adhesive film according to grain arrangement method to any of the preceding claimed claims 2 laser light apparatus.
  8. 【請求項8】 請求項6または7記載の粒子配列装置において、前記レーザ装置に使用されるレーザ光がエキシマレーザであることを特徴とする粒子配列装置。 8. The particle array according to claim 6 or 7, wherein the particle array and wherein the laser beam used in the laser device is an excimer laser.
JP24265396A 1996-08-26 1996-08-26 Method and apparatus for arraying conductive particle Pending JPH1070151A (en)

Priority Applications (1)

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