JP2014187269A5 - - Google Patents

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Publication number
JP2014187269A5
JP2014187269A5 JP2013062009A JP2013062009A JP2014187269A5 JP 2014187269 A5 JP2014187269 A5 JP 2014187269A5 JP 2013062009 A JP2013062009 A JP 2013062009A JP 2013062009 A JP2013062009 A JP 2013062009A JP 2014187269 A5 JP2014187269 A5 JP 2014187269A5
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Japan
Prior art keywords
substrate
film
dielectric constant
stacked
oxide film
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JP2013062009A
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English (en)
Japanese (ja)
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JP6092676B2 (ja
JP2014187269A (ja
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Priority claimed from JP2013062009A external-priority patent/JP6092676B2/ja
Publication of JP2014187269A publication Critical patent/JP2014187269A/ja
Publication of JP2014187269A5 publication Critical patent/JP2014187269A5/ja
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JP2013062009A 2013-03-25 2013-03-25 半導体装置の製造方法、基板処理装置及びプログラム Active JP6092676B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013062009A JP6092676B2 (ja) 2013-03-25 2013-03-25 半導体装置の製造方法、基板処理装置及びプログラム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013062009A JP6092676B2 (ja) 2013-03-25 2013-03-25 半導体装置の製造方法、基板処理装置及びプログラム

Publications (3)

Publication Number Publication Date
JP2014187269A JP2014187269A (ja) 2014-10-02
JP2014187269A5 true JP2014187269A5 (OSRAM) 2016-05-19
JP6092676B2 JP6092676B2 (ja) 2017-03-08

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JP2013062009A Active JP6092676B2 (ja) 2013-03-25 2013-03-25 半導体装置の製造方法、基板処理装置及びプログラム

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JP (1) JP6092676B2 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101753658B1 (ko) * 2015-10-22 2017-07-05 (주)티티에스 정전척
JP2020035869A (ja) 2018-08-29 2020-03-05 キオクシア株式会社 マスク材、および半導体装置の製造方法
KR102199999B1 (ko) * 2020-10-08 2021-01-08 주식회사 유진테크 머티리얼즈 표면 보호 물질을 이용한 박막 형성 방법
KR102887672B1 (ko) * 2022-06-24 2025-11-18 주식회사 에이치피에스피 반도체 장치의 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280380A (ja) * 2001-03-19 2002-09-27 Japan Science & Technology Corp 半導体装置の成膜方法
JP3748218B2 (ja) * 2001-09-10 2006-02-22 日本電信電話株式会社 Ｍｉｓ型半導体装置の製造方法
JP2007258286A (ja) * 2006-03-22 2007-10-04 Tokyo Electron Ltd 熱処理装置、熱処理方法及び記憶媒体
JP2010278190A (ja) * 2009-05-28 2010-12-09 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法、金属酸化物半導体薄膜及び薄膜トランジスタ
JP2011035158A (ja) * 2009-07-31 2011-02-17 Renesas Electronics Corp 半導体装置の製造方法
JP2012104703A (ja) * 2010-11-11 2012-05-31 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
CN102446741B (zh) * 2010-10-07 2016-01-20 株式会社日立国际电气 半导体器件制造方法、衬底处理装置和半导体器件
JP5214774B2 (ja) * 2010-11-19 2013-06-19 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP2012174764A (ja) * 2011-02-18 2012-09-10 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP5615207B2 (ja) * 2011-03-03 2014-10-29 株式会社東芝 半導体装置の製造方法

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