JP2014143398A5 - - Google Patents

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Publication number
JP2014143398A5
JP2014143398A5 JP2013247176A JP2013247176A JP2014143398A5 JP 2014143398 A5 JP2014143398 A5 JP 2014143398A5 JP 2013247176 A JP2013247176 A JP 2013247176A JP 2013247176 A JP2013247176 A JP 2013247176A JP 2014143398 A5 JP2014143398 A5 JP 2014143398A5
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JP
Japan
Prior art keywords
barrier structure
multilayer barrier
layers
layer
binary compound
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JP2013247176A
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English (en)
Japanese (ja)
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JP2014143398A (ja
JP5908882B2 (ja
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Priority claimed from US13/690,532 external-priority patent/US9034491B2/en
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Publication of JP2014143398A publication Critical patent/JP2014143398A/ja
Publication of JP2014143398A5 publication Critical patent/JP2014143398A5/ja
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Publication of JP5908882B2 publication Critical patent/JP5908882B2/ja
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JP2013247176A 2012-11-30 2013-11-29 磁気スタックおよび磁気素子を含む装置 Active JP5908882B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/690,532 US9034491B2 (en) 2012-11-30 2012-11-30 Low resistance area magnetic stack
US13/690,532 2012-11-30

Publications (3)

Publication Number Publication Date
JP2014143398A JP2014143398A (ja) 2014-08-07
JP2014143398A5 true JP2014143398A5 (enExample) 2014-10-09
JP5908882B2 JP5908882B2 (ja) 2016-04-26

Family

ID=49667095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013247176A Active JP5908882B2 (ja) 2012-11-30 2013-11-29 磁気スタックおよび磁気素子を含む装置

Country Status (5)

Country Link
US (1) US9034491B2 (enExample)
EP (1) EP2738770B1 (enExample)
JP (1) JP5908882B2 (enExample)
KR (1) KR101536629B1 (enExample)
CN (1) CN103854673B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9218826B1 (en) * 2013-08-16 2015-12-22 Seagate Technology Llc Tuned horizontally symmetric magnetic stack
TWI569484B (zh) * 2014-01-24 2017-02-01 國立臺灣大學 具超晶格勢壘之磁穿隧接面及包含具超晶格勢壘磁穿隧接面之裝置
DE102016100750A1 (de) * 2016-01-18 2017-07-20 Airbus Operations Gmbh Fahrzeugrumpf und Verfahren zur Montage eines Fahrzeugrumpfs
US9856557B1 (en) 2016-01-22 2018-01-02 Seagate Technology Llc Fabrication of a multi-layered magnetic element

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US6847509B2 (en) * 2001-02-01 2005-01-25 Kabushiki Kaisha Toshiba Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus
US6347049B1 (en) * 2001-07-25 2002-02-12 International Business Machines Corporation Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier
JP3749873B2 (ja) * 2002-03-28 2006-03-01 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
US6849464B2 (en) * 2002-06-10 2005-02-01 Micron Technology, Inc. Method of fabricating a multilayer dielectric tunnel barrier structure
US6743642B2 (en) * 2002-11-06 2004-06-01 International Business Machines Corporation Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology
US7780820B2 (en) * 2005-11-16 2010-08-24 Headway Technologies, Inc. Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
SE531384C2 (sv) * 2006-02-10 2009-03-17 Vnk Innovation Ab Multipla magnetoresistansanordningar baserade på metalldopad magnesiumoxid
JP4496189B2 (ja) * 2006-09-28 2010-07-07 株式会社東芝 磁気抵抗効果型素子および磁気抵抗効果型ランダムアクセスメモリ
JP4343941B2 (ja) * 2006-11-06 2009-10-14 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ハードディスク装置、および、磁気抵抗効果素子の製造方法
JP4492604B2 (ja) * 2006-11-10 2010-06-30 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリおよびハードディスク装置
US7929257B2 (en) * 2007-02-23 2011-04-19 Tdk Corporation Magnetic thin film having spacer layer that contains CuZn
US7888756B2 (en) * 2007-03-22 2011-02-15 Everspin Technologies, Inc. MRAM tunnel barrier structure and methods
JP2008263031A (ja) * 2007-04-11 2008-10-30 Toshiba Corp 磁気抵抗効果素子とその製造方法、磁気抵抗効果素子を備えた磁気記憶装置とその製造方法
JP4996390B2 (ja) * 2007-08-28 2012-08-08 株式会社東芝 スピンｆｅｔ及び磁気抵抗効果素子
JP4703660B2 (ja) * 2008-01-11 2011-06-15 株式会社東芝 スピンｍｏｓ電界効果トランジスタ
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WO2010026667A1 (en) * 2008-09-03 2010-03-11 Canon Anelva Corporation Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline mgo tunnel barrier
JP2010080839A (ja) * 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置
JP2010109319A (ja) * 2008-09-30 2010-05-13 Canon Anelva Corp 磁気抵抗素子の製造法および記憶媒体
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