JP2014112236A5 - - Google Patents
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- JP2014112236A5 JP2014112236A5 JP2013269412A JP2013269412A JP2014112236A5 JP 2014112236 A5 JP2014112236 A5 JP 2014112236A5 JP 2013269412 A JP2013269412 A JP 2013269412A JP 2013269412 A JP2013269412 A JP 2013269412A JP 2014112236 A5 JP2014112236 A5 JP 2014112236A5
- Authority
- JP
- Japan
- Prior art keywords
- patterns
- pattern
- parameter
- response
- linear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 claims 17
- 239000002131 composite material Substances 0.000 claims 2
- 201000009310 astigmatism Diseases 0.000 claims 1
- 238000004590 computer program Methods 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 210000001747 pupil Anatomy 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161505904P | 2011-07-08 | 2011-07-08 | |
| US61/505,904 | 2011-07-08 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012148374A Division JP5451821B2 (ja) | 2011-07-08 | 2012-07-02 | 波面収差に対する応答を調整したパターン設計の方法及びシステム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014112236A JP2014112236A (ja) | 2014-06-19 |
| JP2014112236A5 true JP2014112236A5 (enExample) | 2015-02-19 |
| JP5940049B2 JP5940049B2 (ja) | 2016-06-29 |
Family
ID=47439430
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012148374A Expired - Fee Related JP5451821B2 (ja) | 2011-07-08 | 2012-07-02 | 波面収差に対する応答を調整したパターン設計の方法及びシステム |
| JP2013269412A Expired - Fee Related JP5940049B2 (ja) | 2011-07-08 | 2013-12-26 | 波面収差に対する応答を調整したパターン設計の方法及びシステム |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012148374A Expired - Fee Related JP5451821B2 (ja) | 2011-07-08 | 2012-07-02 | 波面収差に対する応答を調整したパターン設計の方法及びシステム |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8918742B2 (enExample) |
| JP (2) | JP5451821B2 (enExample) |
| CN (1) | CN102866590B (enExample) |
| NL (1) | NL2008957A (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2003719A (en) * | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Delta tcc for fast sensitivity model computation. |
| NL2008702A (en) * | 2011-05-25 | 2012-11-27 | Asml Netherlands Bv | Computational process control. |
| US9182289B2 (en) * | 2011-10-14 | 2015-11-10 | Canon Kabushiki Kaisha | Apparatus and method for estimating wavefront parameters |
| US9395633B2 (en) | 2012-07-10 | 2016-07-19 | Asml Netherlands B.V. | Lithographic cluster system, method for calibrating a positioning device of a lithographic apparatus |
| JP5784657B2 (ja) * | 2013-02-26 | 2015-09-24 | 株式会社東芝 | フォーカス位置調整装置、レチクル、フォーカス位置調整プログラムおよび半導体装置の製造方法 |
| US9970818B2 (en) | 2013-11-01 | 2018-05-15 | Tokyo Electron Limited | Spatially resolved optical emission spectroscopy (OES) in plasma processing |
| US10473525B2 (en) | 2013-11-01 | 2019-11-12 | Tokyo Electron Limited | Spatially resolved optical emission spectroscopy (OES) in plasma processing |
| KR101898087B1 (ko) | 2013-12-30 | 2018-09-12 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 타겟의 디자인을 위한 장치 및 방법 |
| JP6567523B2 (ja) | 2013-12-30 | 2019-08-28 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジーターゲットの設計のための方法及び装置 |
| JP6291581B2 (ja) | 2013-12-30 | 2018-03-14 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジーターゲットの設計のための方法及び装置 |
| KR101860038B1 (ko) | 2013-12-30 | 2018-05-21 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 타겟의 디자인을 위한 방법 및 장치 |
| CN106463434B (zh) | 2014-06-10 | 2020-12-22 | Asml荷兰有限公司 | 计算晶片检验 |
| WO2016045901A1 (en) | 2014-09-22 | 2016-03-31 | Asml Netherlands B.V. | Process window identifier |
| CN104267581B (zh) * | 2014-09-26 | 2016-08-24 | 中国科学院光电技术研究所 | 一种光学系统气压分段补偿像差的划分方法 |
| KR102404639B1 (ko) | 2015-02-02 | 2022-06-03 | 삼성전자주식회사 | 전자 빔 노광 방법 및 그를 포함하는 기판 제조 방법 |
| CN112485971B (zh) * | 2015-04-21 | 2024-12-03 | 科磊股份有限公司 | 用于倾斜装置设计的计量目标设计 |
| US11126092B2 (en) * | 2015-11-13 | 2021-09-21 | Asml Netherlands B.V. | Methods for determining an approximate value of a processing parameter at which a characteristic of the patterning process has a target value |
| US10394984B2 (en) * | 2015-11-25 | 2019-08-27 | International Business Machines Corporation | Tool to provide integrated circuit masks with accurate dimensional compensation of patterns |
| US10663870B2 (en) | 2015-12-18 | 2020-05-26 | Asml Netherlands B.V. | Gauge pattern selection |
| US10546790B2 (en) | 2016-03-01 | 2020-01-28 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter |
| IT201600083804A1 (it) * | 2016-08-09 | 2018-02-09 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo a semiconduttore includente una struttura microelettromeccanica ed un associato circuito elettronico integrato e relativo dispositivo a semiconduttore |
| US11029594B2 (en) | 2016-09-13 | 2021-06-08 | Asml Netherlands B.V. | Optimization of a lithography apparatus or patterning process based on selected aberration |
| US10215704B2 (en) | 2017-03-02 | 2019-02-26 | Tokyo Electron Limited | Computed tomography using intersecting views of plasma using optical emission spectroscopy during plasma processing |
| US10705420B2 (en) * | 2018-05-15 | 2020-07-07 | Asml Us, Llc | Mask bias approximation |
| CN110530530B (zh) * | 2018-05-23 | 2021-01-15 | 中国科学院长春光学精密机械与物理研究所 | 一种波前提取算法及采用该算法的剪切干涉仪 |
| TWI794544B (zh) * | 2018-10-09 | 2023-03-01 | 荷蘭商Asml荷蘭公司 | 用於高數值孔徑穿縫源光罩最佳化之方法 |
| CN111352303B (zh) * | 2018-12-21 | 2021-06-18 | 上海微电子装备(集团)股份有限公司 | 投影物镜波像差检测装置及方法、光刻机 |
| US12222656B2 (en) | 2019-09-03 | 2025-02-11 | Asml Netherlands B.V. | Method for determining aberration sensitivity of patterns |
| CN113126443B (zh) * | 2019-12-31 | 2021-12-10 | 上海微电子装备(集团)股份有限公司 | 解决光刻机像面畸变的工艺方法及装置、掩膜版设计方法 |
| EP3964809A1 (en) * | 2020-09-02 | 2022-03-09 | Stichting VU | Wavefront metrology sensor and mask therefor, method for optimizing a mask and associated apparatuses |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11184070A (ja) * | 1997-12-24 | 1999-07-09 | Toshiba Corp | 収差測定方法および収差測定用フォトマスク |
| US6567226B2 (en) * | 1998-03-03 | 2003-05-20 | Sumitomo Electric Industries, Ltd. | Method for designing a refractive or reflective optical system and method for designing a diffraction optical element |
| US6272392B1 (en) * | 1998-12-04 | 2001-08-07 | Advanced Micro Devices, Inc. | Methodology for extracting effective lens aberrations using a neural network |
| KR20000006622A (ko) * | 1999-07-06 | 2000-02-07 | 이환성 | 의료용매트 |
| JP2001068398A (ja) * | 1999-08-27 | 2001-03-16 | Hitachi Ltd | 半導体集積回路装置の製造方法およびマスクの製造方法 |
| US6396569B2 (en) * | 1999-09-02 | 2002-05-28 | Texas Instruments Incorporated | Image displacement test reticle for measuring aberration characteristics of projection optics |
| JP3442007B2 (ja) * | 1999-09-03 | 2003-09-02 | 沖電気工業株式会社 | ステッパレンズの収差測定パターンおよびステッパレンズの収差特性評価方法 |
| JP2001168000A (ja) * | 1999-12-03 | 2001-06-22 | Nikon Corp | 露光装置の製造方法、および該製造方法によって製造された露光装置を用いたマイクロデバイスの製造方法 |
| US6621556B2 (en) * | 2000-02-28 | 2003-09-16 | Nikon Corporation | Projection exposure apparatus and manufacturing and adjusting methods thereof |
| JP4005763B2 (ja) * | 2000-06-30 | 2007-11-14 | 株式会社東芝 | 投影光学系の収差補正方法及び半導体装置の製造方法 |
| US20050136340A1 (en) * | 2000-07-21 | 2005-06-23 | Asml Netherlands B.V. | Lithographic apparatus and methods, patterning structure and method for making a patterning structure, device manufacturing method, and device manufactured thereby |
| TWI285295B (en) * | 2001-02-23 | 2007-08-11 | Asml Netherlands Bv | Illumination optimization in lithography |
| US6956659B2 (en) * | 2001-05-22 | 2005-10-18 | Nikon Precision Inc. | Measurement of critical dimensions of etched features |
| TWI254837B (en) * | 2001-08-23 | 2006-05-11 | Asml Netherlands Bv | Method of measuring aberration of a projection system of a lithographic apparatus, device manufacturing method, and device manufactured thereby |
| KR100654784B1 (ko) * | 2001-08-31 | 2006-12-08 | 캐논 가부시끼가이샤 | 레티클과 광학특성의 측정방법 |
| US6842237B2 (en) * | 2001-12-28 | 2005-01-11 | International Business Machines Corporation | Phase shifted test pattern for monitoring focus and aberrations in optical projection systems |
| KR100673487B1 (ko) * | 2002-04-17 | 2007-01-24 | 캐논 가부시끼가이샤 | 레티클 및 광학특성 계측방법 |
| US6664121B2 (en) * | 2002-05-20 | 2003-12-16 | Nikon Precision, Inc. | Method and apparatus for position measurement of a pattern formed by a lithographic exposure tool |
| DE10224363A1 (de) * | 2002-05-24 | 2003-12-04 | Zeiss Carl Smt Ag | Verfahren zur Bestimmung von Wellenfrontaberrationen |
| JP3875158B2 (ja) * | 2002-08-09 | 2007-01-31 | 株式会社東芝 | 露光装置判定システム、露光装置判定方法、露光装置判定プログラム及び半導体装置の製造方法 |
| JP2004253673A (ja) * | 2003-02-21 | 2004-09-09 | Nikon Corp | 予測方法、評価方法、調整方法、露光方法、デバイス製造方法、並びにプログラム |
| JP4015079B2 (ja) * | 2003-07-18 | 2007-11-28 | 株式会社東芝 | レチクル、露光装置検査システム、露光装置検査方法及びレチクルの製造方法 |
| US7245354B2 (en) * | 2004-02-03 | 2007-07-17 | Yuri Granik | Source optimization for image fidelity and throughput |
| US9188974B1 (en) * | 2004-02-13 | 2015-11-17 | Kla-Tencor Technologies Corp. | Methods for improved monitor and control of lithography processes |
| US7242475B2 (en) * | 2004-03-25 | 2007-07-10 | Asml Netherlands B.V. | Method of determining aberration of a projection system of a lithographic apparatus |
| JP4455129B2 (ja) * | 2004-04-06 | 2010-04-21 | キヤノン株式会社 | 収差計測方法及びそれを用いた投影露光装置 |
| US7266800B2 (en) * | 2004-06-04 | 2007-09-04 | Invarium, Inc. | Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes |
| US7310796B2 (en) | 2004-08-27 | 2007-12-18 | Applied Materials, Israel, Ltd. | System and method for simulating an aerial image |
| US7331033B2 (en) | 2004-08-27 | 2008-02-12 | Applied Materials, Israel, Ltd. | Simulation of aerial images |
| US7508527B2 (en) * | 2005-04-11 | 2009-03-24 | Zetetic Institute | Apparatus and method of in situ and ex situ measurement of spatial impulse response of an optical system using phase-shifting point-diffraction interferometry |
| US7519940B2 (en) * | 2005-05-02 | 2009-04-14 | Cadence Design Systems, Inc. | Apparatus and method for compensating a lithography projection tool |
| WO2007019269A2 (en) * | 2005-08-08 | 2007-02-15 | Brion Technologies, Inc. | System and method for creating a focus-exposure model of a lithography process |
| JP2007066926A (ja) * | 2005-08-29 | 2007-03-15 | Canon Inc | 計測方法及び装置、露光装置、並びに、デバイス製造方法 |
| US7695876B2 (en) * | 2005-08-31 | 2010-04-13 | Brion Technologies, Inc. | Method for identifying and using process window signature patterns for lithography process control |
| JP4954211B2 (ja) | 2005-09-09 | 2012-06-13 | エーエスエムエル ネザーランズ ビー.ブイ. | 個別マスクエラーモデルを使用するマスク検証を行うシステムおよび方法 |
| EP1795967B1 (en) * | 2005-12-09 | 2010-05-05 | Imec | Methods and devices for lithography |
| US7643976B2 (en) * | 2006-02-28 | 2010-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for identifying lens aberration sensitive patterns in an integrated circuit chip |
| US7580113B2 (en) * | 2006-06-23 | 2009-08-25 | Asml Netherlands B.V. | Method of reducing a wave front aberration, and computer program product |
| US8098926B2 (en) * | 2007-01-10 | 2012-01-17 | Applied Materials Israel, Ltd. | Method and system for evaluating an evaluated pattern of a mask |
| US7832864B2 (en) * | 2007-06-15 | 2010-11-16 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Inverse optical design |
| US8570485B2 (en) * | 2008-06-03 | 2013-10-29 | Asml Netherlands B.V. | Lens heating compensation systems and methods |
| US8542340B2 (en) * | 2008-07-07 | 2013-09-24 | Asml Netherlands B.V. | Illumination optimization |
| JP5153492B2 (ja) * | 2008-07-11 | 2013-02-27 | キヤノン株式会社 | 露光条件決定方法およびコンピュータプログラム |
| JP2010109294A (ja) * | 2008-10-31 | 2010-05-13 | Canon Inc | 測定装置、露光装置およびデバイス製造方法 |
| NL2003702A (en) * | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Pattern selection for lithographic model calibration. |
| NL2003719A (en) * | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Delta tcc for fast sensitivity model computation. |
| NL2006700A (en) * | 2010-06-04 | 2011-12-06 | Asml Netherlands Bv | Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus. |
| NL2007306A (en) * | 2010-09-23 | 2012-03-26 | Asml Netherlands Bv | Source polarization optimization. |
| NL2007577A (en) * | 2010-11-10 | 2012-05-14 | Asml Netherlands Bv | Optimization of source, mask and projection optics. |
| NL2007642A (en) * | 2010-11-10 | 2012-05-14 | Asml Netherlands Bv | Optimization flows of source, mask and projection optics. |
| NL2007579A (en) * | 2010-11-10 | 2012-05-14 | Asml Netherlands Bv | Pattern-dependent proximity matching/tuning including light manipulation by projection optics. |
| NL2007578A (en) * | 2010-11-17 | 2012-05-22 | Asml Netherlands Bv | Pattern-independent and hybrid matching/tuning including light manipulation by projection optics. |
| NL2008311A (en) * | 2011-04-04 | 2012-10-08 | Asml Netherlands Bv | Integration of lithography apparatus and mask optimization process with multiple patterning process. |
| US8887105B1 (en) * | 2011-10-28 | 2014-11-11 | Asml Netherlands B.V. | Calibration pattern selection based on noise sensitivity |
| NL2009982A (en) * | 2012-01-10 | 2013-07-15 | Asml Netherlands Bv | Source mask optimization to reduce stochastic effects. |
| NL2010792A (en) * | 2012-05-31 | 2013-12-04 | Asml Netherlands Bv | Gradient-based pattern and evaluation point selection. |
| KR101668984B1 (ko) * | 2013-09-14 | 2016-10-24 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 투영 장치의 동작 방법 |
-
2012
- 2012-06-07 NL NL2008957A patent/NL2008957A/en not_active Application Discontinuation
- 2012-07-02 JP JP2012148374A patent/JP5451821B2/ja not_active Expired - Fee Related
- 2012-07-05 US US13/542,625 patent/US8918742B2/en active Active
- 2012-07-05 CN CN201210232586.5A patent/CN102866590B/zh active Active
-
2013
- 2013-12-26 JP JP2013269412A patent/JP5940049B2/ja not_active Expired - Fee Related
-
2014
- 2014-12-18 US US14/575,609 patent/US10423075B2/en active Active
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