WO2016098452A8 - マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法 - Google Patents

マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法 Download PDF

Info

Publication number
WO2016098452A8
WO2016098452A8 PCT/JP2015/080088 JP2015080088W WO2016098452A8 WO 2016098452 A8 WO2016098452 A8 WO 2016098452A8 JP 2015080088 W JP2015080088 W JP 2015080088W WO 2016098452 A8 WO2016098452 A8 WO 2016098452A8
Authority
WO
WIPO (PCT)
Prior art keywords
mask blank
manufacturing
substrate
mask
plane profile
Prior art date
Application number
PCT/JP2015/080088
Other languages
English (en)
French (fr)
Other versions
WO2016098452A1 (ja
Inventor
洋平 池邊
勝 田辺
Original Assignee
Hoya株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya株式会社 filed Critical Hoya株式会社
Priority to JP2016507314A priority Critical patent/JP6033987B1/ja
Priority to KR1020177014558A priority patent/KR102519334B1/ko
Priority to US15/533,496 priority patent/US20170363952A1/en
Publication of WO2016098452A1 publication Critical patent/WO2016098452A1/ja
Publication of WO2016098452A8 publication Critical patent/WO2016098452A8/ja
Priority to US15/676,032 priority patent/US10578961B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3636—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing silicon, hydrogenated silicon or a silicide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/251—Al, Cu, Mg or noble metals
    • C03C2217/254—Noble metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/257—Refractory metals
    • C03C2217/26—Cr, Mo, W
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/70—Properties of coatings
    • C03C2217/73—Anti-reflective coatings with specific characteristics
    • C03C2217/734—Anti-reflective coatings with specific characteristics comprising an alternation of high and low refractive indexes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering
    • C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

露光装置の波面補正機能によって、波面の補正がしやすいマスクブランク用基板、マスクブランク、転写用マスクを提供することである。また、これらの製造方法を提供することを目的とし、　半径に係る変数の次数が２次以下の項のみで構成され、かつ半径に係る変数の次数が２次の項を１以上含むゼルニケ多項式によって定義される光学的に実効的な平坦基準面形状となる仮想表面形状を設定し、２つの主表面の各表面形状を合成することにより得られる合成表面形状と仮想表面形状との差分形状の最大値と最小値の差のデータ（ＰＶ値）が２５ｎｍ以下となるマスクブランク用基板を選別する。
PCT/JP2015/080088 2014-12-19 2015-10-26 マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法 WO2016098452A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016507314A JP6033987B1 (ja) 2014-12-19 2015-10-26 マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法
KR1020177014558A KR102519334B1 (ko) 2014-12-19 2015-10-26 마스크 블랭크용 기판, 마스크 블랭크 및 이들의 제조 방법, 전사용 마스크의 제조 방법 그리고 반도체 디바이스의 제조 방법
US15/533,496 US20170363952A1 (en) 2014-12-19 2015-10-26 Mask blank substrate, mask blank, and methods for manufacturing them, method for manufacturing transfer mask, and method for manufacturing semiconductor device
US15/676,032 US10578961B2 (en) 2014-12-19 2017-08-14 Mask blank substrate, multi-layer reflective film coated substrate, and mask blank

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014257187 2014-12-19
JP2014-257187 2014-12-19

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US15/533,496 A-371-Of-International US20170363952A1 (en) 2014-12-19 2015-10-26 Mask blank substrate, mask blank, and methods for manufacturing them, method for manufacturing transfer mask, and method for manufacturing semiconductor device
US15/676,032 Continuation US10578961B2 (en) 2014-12-19 2017-08-14 Mask blank substrate, multi-layer reflective film coated substrate, and mask blank

Publications (2)

Publication Number Publication Date
WO2016098452A1 WO2016098452A1 (ja) 2016-06-23
WO2016098452A8 true WO2016098452A8 (ja) 2017-04-20

Family

ID=56126354

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/080088 WO2016098452A1 (ja) 2014-12-19 2015-10-26 マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法

Country Status (5)

Country Link
US (2) US20170363952A1 (ja)
JP (1) JP6033987B1 (ja)
KR (1) KR102519334B1 (ja)
TW (1) TWI659260B (ja)
WO (1) WO2016098452A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102519334B1 (ko) 2014-12-19 2023-04-07 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크 및 이들의 제조 방법, 전사용 마스크의 제조 방법 그리고 반도체 디바이스의 제조 방법
TWI694304B (zh) * 2015-06-08 2020-05-21 日商Ａｇｃ股份有限公司 Ｅｕｖ微影術用反射型光罩基底
JP6704813B2 (ja) * 2016-08-05 2020-06-03 キヤノン株式会社 計測装置、露光装置、および物品の製造方法
JP6862859B2 (ja) * 2017-01-30 2021-04-21 Ａｇｃ株式会社 マスクブランク用のガラス基板、マスクブランクおよびフォトマスク
JP6229807B1 (ja) * 2017-02-22 2017-11-15 旭硝子株式会社 マスクブランク
US11561463B2 (en) * 2017-12-27 2023-01-24 Hoya Corporation Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method
WO2020196555A1 (ja) * 2019-03-28 2020-10-01 Hoya株式会社 マスクブランク用基板、導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
WO2021061477A1 (en) 2019-09-27 2021-04-01 Corning Incorporated Devices, systems, and methods of generating and providing a target topographic map for finishing a photomask blank subject to functional requirements on flatness
JPWO2022149417A1 (ja) * 2021-01-05 2022-07-14
JP2023016701A (ja) 2021-07-21 2023-02-02 信越化学工業株式会社 マスクブランクス用基板及びその製造方法
JP2024002066A (ja) 2022-06-23 2024-01-11 信越化学工業株式会社 マスクブランクス用基板及びその製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6440267A (en) 1987-08-07 1989-02-10 Shinetsu Chemical Co Manufacture of precisely polished glass
JP3627805B2 (ja) 2001-04-20 2005-03-09 信越化学工業株式会社 フォトマスク用ガラス基板及びその製造方法
JP4561950B2 (ja) * 2001-08-08 2010-10-13 信越化学工業株式会社 角形基板
US6897940B2 (en) 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
US7042550B2 (en) 2002-11-28 2006-05-09 Asml Netherlands B.V. Device manufacturing method and computer program
JP2004296939A (ja) 2003-03-27 2004-10-21 Toshiba Corp 位置歪み補正装置、露光システム、露光方法及び位置歪み補正プログラム
JPWO2004099874A1 (ja) 2003-04-16 2006-07-13 株式会社ニコン パターン決定方法及びシステム、マスクの製造方法、結像性能調整方法、露光方法及び装置、並びにプログラム及び情報記録媒体
JP4647967B2 (ja) 2004-11-09 2011-03-09 Ｈｏｙａ株式会社 マスクブランクス用ガラス基板の製造方法，マスクブランクスの製造方法，露光用マスクの製造方法，及び，半導体装置の製造方法
JP5035516B2 (ja) * 2005-12-08 2012-09-26 信越化学工業株式会社 フォトマスク用チタニアドープ石英ガラスの製造方法
JP5076464B2 (ja) * 2005-12-12 2012-11-21 Ｔｄｋ株式会社 リチウムイオン二次電池
US7372633B2 (en) 2006-07-18 2008-05-13 Asml Netherlands B.V. Lithographic apparatus, aberration correction device and device manufacturing method
JP5411464B2 (ja) * 2008-07-10 2014-02-12 株式会社アドバンテスト 電子線描画装置
JP2010135732A (ja) * 2008-08-01 2010-06-17 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
KR101271644B1 (ko) * 2008-11-26 2013-07-30 호야 가부시키가이샤 마스크블랭크용 기판
CN102822743B (zh) 2010-03-30 2014-09-03 Hoya株式会社 掩模坯料用基板的制造方法、掩模坯料的制造方法、转印用掩模的制造方法以及半导体器件的制造方法
JP5637062B2 (ja) * 2010-05-24 2014-12-10 信越化学工業株式会社 合成石英ガラス基板及びその製造方法
WO2012044586A1 (en) * 2010-09-30 2012-04-05 Rigel Pharmaceuticals, Inc. In vivo reporter system
JP5880449B2 (ja) * 2011-01-26 2016-03-09 旭硝子株式会社 フォトマスクの製造方法
JP5768452B2 (ja) * 2011-04-11 2015-08-26 信越化学工業株式会社 チアニアドープ石英ガラスの製造方法
JP5835968B2 (ja) 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
US8975711B2 (en) * 2011-12-08 2015-03-10 Infineon Technologies Ag Device including two power semiconductor chips and manufacturing thereof
JP5538638B2 (ja) * 2012-03-28 2014-07-02 Ｈｏｙａ株式会社 マスクブランク用基板、多層反射膜付き基板、透過型マスクブランク、反射型マスクブランク、透過型マスク、反射型マスク及び半導体装置の製造方法
US9348217B2 (en) * 2012-03-30 2016-05-24 Hoya Corporation Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method
JP2014135435A (ja) * 2013-01-11 2014-07-24 Toshiba Corp 半導体装置の製造方法
JP6147514B2 (ja) * 2013-01-31 2017-06-14 Hoya株式会社 マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法
JP6206831B2 (ja) * 2013-03-29 2017-10-04 Hoya株式会社 Ｅｕｖリソグラフィー用マスクブランク用基板の製造方法、ｅｕｖリソグラフィー用多層反射膜付き基板の製造方法、ｅｕｖリソグラフィー用マスクブランクの製造方法、及びｅｕｖリソグラフィー用転写マスクの製造方法
US9690189B2 (en) * 2013-06-21 2017-06-27 Hoya Corporation Mask blank substrate, mask blank, transfer mask, and method of manufacturing semiconductor device
US20160168020A1 (en) * 2014-12-12 2016-06-16 Asahi Glass Company, Limited Method of finishing pre-polished glass substrate surface
KR102519334B1 (ko) 2014-12-19 2023-04-07 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크 및 이들의 제조 방법, 전사용 마스크의 제조 방법 그리고 반도체 디바이스의 제조 방법

Also Published As

Publication number Publication date
WO2016098452A1 (ja) 2016-06-23
KR102519334B1 (ko) 2023-04-07
JP6033987B1 (ja) 2016-11-30
US20170363952A1 (en) 2017-12-21
US20180157166A1 (en) 2018-06-07
KR20170095837A (ko) 2017-08-23
JPWO2016098452A1 (ja) 2017-04-27
US10578961B2 (en) 2020-03-03
TWI659260B (zh) 2019-05-11
TW201631379A (zh) 2016-09-01

Similar Documents

Publication Publication Date Title
WO2016098452A8 (ja) マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法
EP3133442A4 (en) Pellicle film, pellicle, exposure master, exposure device, and method for manufacturing semiconductor device
EP3290964A4 (en) Method for producing optical film, and optical film
PH12016501442B1 (en) Protective film-forming film, sheet for forming protective film, complex sheet for forming protective film, and method of producing manufactured product
WO2013043831A3 (en) Process aware metrology
WO2015060915A3 (en) Quantum processor problem compilation
EP3106920A4 (en) Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, mask blank provided with active light sensitive or radiation sensitive film, photomask, pattern forming method, method for manufacturing electronic device, and electronic device
FI12009U1 (fi) Kuitupohjainen tuote
EP3410215A4 (en) FILM MASK, METHOD FOR THE PRODUCTION THEREOF AND METHOD FOR FORMING A PATTERN WITH THE FILM MASK AND PATTERN MADE THEREFOR
EP3434477A4 (en) METHOD FOR THE PRODUCTION OF AN ELASTIC FILM WITH A DEVICABLE STRUCTURE AND ABSORBENT ARTICLE
JP2015222215A5 (ja)
EP3584636A4 (en) PELLICLE, ORIGINAL EXPOSURE PLATE, EXPOSURE DEVICE, AND SEMICONDUCTORIAL COMPONENT MANUFACTURING METHOD
PH12016000001A1 (en) Method for producing a polarized eyewear
EP3410214A4 (en) FILM MASK, METHOD OF MANUFACTURING THE SAME, AND METHOD FOR FORMING PATTERNS USING THE FILM MASK, AND PATTERN THUS FORMED
EP3267253A4 (en) Photomask blank, method for manufacturing photomask, and mask pattern formation method
WO2018101743A3 (ko) 적층체
WO2019064206A3 (en) Driveline designer
EP3764161A4 (en) PELLICLE, EXPOSURE MASTER, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT
EP3522243A4 (en) COMPOSITION FOR FORMING AN ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM AND METHOD FOR THE PRODUCTION THEREOF AND ORGANIC SEMICONDUCTOR ELEMENT
EP3296774A4 (en) LIGHT CONDENSATION DEVICE, PHOTOVOLTAIC DEVICE, LIGHT CONDENSATION FILM, PHOTOVOLTAIC FILM AND METHOD FOR PRODUCING A LIGHT CONDENSATION DEVICE OR PHOTOVOLTAIC DEVICE
SG10202103395QA (en) Mask blank, method for producing transfer mask and method for producing semiconductor device
WO2018093223A3 (ko) 엘더칼시톨의 제조방법 및 그를 위한 중간체
EP3404474A4 (en) FILM WITH VARIABLE PERMEABILITY, METHOD FOR THE PRODUCTION THEREOF AND USE THEREOF
EP3732392A4 (en) SYSTEMS AND PROCESSES FOR STEAM REHEATING IN POWER PLANTS
EP3421514A4 (en) METHOD FOR PRODUCING A HARDENED PRODUCT, HARDENED PRODUCT AND EYE GLASS SUBSTRATE

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2016507314

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15869660

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20177014558

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 15533496

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15869660

Country of ref document: EP

Kind code of ref document: A1