NL2008957A - Methods and systems for pattern design with tailored response to wavefront aberration. - Google Patents

Methods and systems for pattern design with tailored response to wavefront aberration. Download PDF

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Publication number
NL2008957A
NL2008957A NL2008957A NL2008957A NL2008957A NL 2008957 A NL2008957 A NL 2008957A NL 2008957 A NL2008957 A NL 2008957A NL 2008957 A NL2008957 A NL 2008957A NL 2008957 A NL2008957 A NL 2008957A
Authority
NL
Netherlands
Prior art keywords
patterns
pattern
response
linear
design
Prior art date
Application number
NL2008957A
Other languages
English (en)
Dutch (nl)
Inventor
Hanying Feng
Yu Cao
Jun Ye
Youping Zhang
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of NL2008957A publication Critical patent/NL2008957A/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Mathematical Analysis (AREA)
  • Pure & Applied Mathematics (AREA)
  • Databases & Information Systems (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Algebra (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL2008957A 2011-07-08 2012-06-07 Methods and systems for pattern design with tailored response to wavefront aberration. NL2008957A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161505904P 2011-07-08 2011-07-08
US201161505904 2011-07-08

Publications (1)

Publication Number Publication Date
NL2008957A true NL2008957A (en) 2013-01-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
NL2008957A NL2008957A (en) 2011-07-08 2012-06-07 Methods and systems for pattern design with tailored response to wavefront aberration.

Country Status (4)

Country Link
US (2) US8918742B2 (enExample)
JP (2) JP5451821B2 (enExample)
CN (1) CN102866590B (enExample)
NL (1) NL2008957A (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2003719A (en) * 2008-11-10 2010-05-11 Brion Tech Inc Delta tcc for fast sensitivity model computation.
NL2008702A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Computational process control.
US9182289B2 (en) * 2011-10-14 2015-11-10 Canon Kabushiki Kaisha Apparatus and method for estimating wavefront parameters
US9395633B2 (en) 2012-07-10 2016-07-19 Asml Netherlands B.V. Lithographic cluster system, method for calibrating a positioning device of a lithographic apparatus
JP5784657B2 (ja) * 2013-02-26 2015-09-24 株式会社東芝 フォーカス位置調整装置、レチクル、フォーカス位置調整プログラムおよび半導体装置の製造方法
US9970818B2 (en) 2013-11-01 2018-05-15 Tokyo Electron Limited Spatially resolved optical emission spectroscopy (OES) in plasma processing
US10473525B2 (en) 2013-11-01 2019-11-12 Tokyo Electron Limited Spatially resolved optical emission spectroscopy (OES) in plasma processing
KR101898087B1 (ko) 2013-12-30 2018-09-12 에이에스엠엘 네델란즈 비.브이. 메트롤로지 타겟의 디자인을 위한 장치 및 방법
JP6567523B2 (ja) 2013-12-30 2019-08-28 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジーターゲットの設計のための方法及び装置
JP6291581B2 (ja) 2013-12-30 2018-03-14 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジーターゲットの設計のための方法及び装置
KR101860038B1 (ko) 2013-12-30 2018-05-21 에이에스엠엘 네델란즈 비.브이. 메트롤로지 타겟의 디자인을 위한 방법 및 장치
CN106463434B (zh) 2014-06-10 2020-12-22 Asml荷兰有限公司 计算晶片检验
WO2016045901A1 (en) 2014-09-22 2016-03-31 Asml Netherlands B.V. Process window identifier
CN104267581B (zh) * 2014-09-26 2016-08-24 中国科学院光电技术研究所 一种光学系统气压分段补偿像差的划分方法
KR102404639B1 (ko) 2015-02-02 2022-06-03 삼성전자주식회사 전자 빔 노광 방법 및 그를 포함하는 기판 제조 방법
CN112485971B (zh) * 2015-04-21 2024-12-03 科磊股份有限公司 用于倾斜装置设计的计量目标设计
US11126092B2 (en) * 2015-11-13 2021-09-21 Asml Netherlands B.V. Methods for determining an approximate value of a processing parameter at which a characteristic of the patterning process has a target value
US10394984B2 (en) * 2015-11-25 2019-08-27 International Business Machines Corporation Tool to provide integrated circuit masks with accurate dimensional compensation of patterns
US10663870B2 (en) 2015-12-18 2020-05-26 Asml Netherlands B.V. Gauge pattern selection
US10546790B2 (en) 2016-03-01 2020-01-28 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter
IT201600083804A1 (it) * 2016-08-09 2018-02-09 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo a semiconduttore includente una struttura microelettromeccanica ed un associato circuito elettronico integrato e relativo dispositivo a semiconduttore
US11029594B2 (en) 2016-09-13 2021-06-08 Asml Netherlands B.V. Optimization of a lithography apparatus or patterning process based on selected aberration
US10215704B2 (en) 2017-03-02 2019-02-26 Tokyo Electron Limited Computed tomography using intersecting views of plasma using optical emission spectroscopy during plasma processing
US10705420B2 (en) * 2018-05-15 2020-07-07 Asml Us, Llc Mask bias approximation
CN110530530B (zh) * 2018-05-23 2021-01-15 中国科学院长春光学精密机械与物理研究所 一种波前提取算法及采用该算法的剪切干涉仪
TWI794544B (zh) * 2018-10-09 2023-03-01 荷蘭商Ａｓｍｌ荷蘭公司 用於高數值孔徑穿縫源光罩最佳化之方法
CN111352303B (zh) * 2018-12-21 2021-06-18 上海微电子装备（集团）股份有限公司 投影物镜波像差检测装置及方法、光刻机
US12222656B2 (en) 2019-09-03 2025-02-11 Asml Netherlands B.V. Method for determining aberration sensitivity of patterns
CN113126443B (zh) * 2019-12-31 2021-12-10 上海微电子装备（集团）股份有限公司 解决光刻机像面畸变的工艺方法及装置、掩膜版设计方法
EP3964809A1 (en) * 2020-09-02 2022-03-09 Stichting VU Wavefront metrology sensor and mask therefor, method for optimizing a mask and associated apparatuses

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11184070A (ja) * 1997-12-24 1999-07-09 Toshiba Corp 収差測定方法および収差測定用フォトマスク
US6567226B2 (en) * 1998-03-03 2003-05-20 Sumitomo Electric Industries, Ltd. Method for designing a refractive or reflective optical system and method for designing a diffraction optical element
US6272392B1 (en) * 1998-12-04 2001-08-07 Advanced Micro Devices, Inc. Methodology for extracting effective lens aberrations using a neural network
KR20000006622A (ko) * 1999-07-06 2000-02-07 이환성 의료용매트
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
US6396569B2 (en) * 1999-09-02 2002-05-28 Texas Instruments Incorporated Image displacement test reticle for measuring aberration characteristics of projection optics
JP3442007B2 (ja) * 1999-09-03 2003-09-02 沖電気工業株式会社 ステッパレンズの収差測定パターンおよびステッパレンズの収差特性評価方法
JP2001168000A (ja) * 1999-12-03 2001-06-22 Nikon Corp 露光装置の製造方法、および該製造方法によって製造された露光装置を用いたマイクロデバイスの製造方法
US6621556B2 (en) * 2000-02-28 2003-09-16 Nikon Corporation Projection exposure apparatus and manufacturing and adjusting methods thereof
JP4005763B2 (ja) * 2000-06-30 2007-11-14 株式会社東芝 投影光学系の収差補正方法及び半導体装置の製造方法
US20050136340A1 (en) * 2000-07-21 2005-06-23 Asml Netherlands B.V. Lithographic apparatus and methods, patterning structure and method for making a patterning structure, device manufacturing method, and device manufactured thereby
TWI285295B (en) * 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6956659B2 (en) * 2001-05-22 2005-10-18 Nikon Precision Inc. Measurement of critical dimensions of etched features
TWI254837B (en) * 2001-08-23 2006-05-11 Asml Netherlands Bv Method of measuring aberration of a projection system of a lithographic apparatus, device manufacturing method, and device manufactured thereby
KR100654784B1 (ko) * 2001-08-31 2006-12-08 캐논 가부시끼가이샤 레티클과 광학특성의 측정방법
US6842237B2 (en) * 2001-12-28 2005-01-11 International Business Machines Corporation Phase shifted test pattern for monitoring focus and aberrations in optical projection systems
KR100673487B1 (ko) * 2002-04-17 2007-01-24 캐논 가부시끼가이샤 레티클 및 광학특성 계측방법
US6664121B2 (en) * 2002-05-20 2003-12-16 Nikon Precision, Inc. Method and apparatus for position measurement of a pattern formed by a lithographic exposure tool
DE10224363A1 (de) * 2002-05-24 2003-12-04 Zeiss Carl Smt Ag Verfahren zur Bestimmung von Wellenfrontaberrationen
JP3875158B2 (ja) * 2002-08-09 2007-01-31 株式会社東芝 露光装置判定システム、露光装置判定方法、露光装置判定プログラム及び半導体装置の製造方法
JP2004253673A (ja) * 2003-02-21 2004-09-09 Nikon Corp 予測方法、評価方法、調整方法、露光方法、デバイス製造方法、並びにプログラム
JP4015079B2 (ja) * 2003-07-18 2007-11-28 株式会社東芝 レチクル、露光装置検査システム、露光装置検査方法及びレチクルの製造方法
US7245354B2 (en) * 2004-02-03 2007-07-17 Yuri Granik Source optimization for image fidelity and throughput
US9188974B1 (en) * 2004-02-13 2015-11-17 Kla-Tencor Technologies Corp. Methods for improved monitor and control of lithography processes
US7242475B2 (en) * 2004-03-25 2007-07-10 Asml Netherlands B.V. Method of determining aberration of a projection system of a lithographic apparatus
JP4455129B2 (ja) * 2004-04-06 2010-04-21 キヤノン株式会社 収差計測方法及びそれを用いた投影露光装置
US7266800B2 (en) * 2004-06-04 2007-09-04 Invarium, Inc. Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes
US7310796B2 (en) 2004-08-27 2007-12-18 Applied Materials, Israel, Ltd. System and method for simulating an aerial image
US7331033B2 (en) 2004-08-27 2008-02-12 Applied Materials, Israel, Ltd. Simulation of aerial images
US7508527B2 (en) * 2005-04-11 2009-03-24 Zetetic Institute Apparatus and method of in situ and ex situ measurement of spatial impulse response of an optical system using phase-shifting point-diffraction interferometry
US7519940B2 (en) * 2005-05-02 2009-04-14 Cadence Design Systems, Inc. Apparatus and method for compensating a lithography projection tool
WO2007019269A2 (en) * 2005-08-08 2007-02-15 Brion Technologies, Inc. System and method for creating a focus-exposure model of a lithography process
JP2007066926A (ja) * 2005-08-29 2007-03-15 Canon Inc 計測方法及び装置、露光装置、並びに、デバイス製造方法
US7695876B2 (en) * 2005-08-31 2010-04-13 Brion Technologies, Inc. Method for identifying and using process window signature patterns for lithography process control
JP4954211B2 (ja) 2005-09-09 2012-06-13 エーエスエムエル ネザーランズ ビー．ブイ． 個別マスクエラーモデルを使用するマスク検証を行うシステムおよび方法
EP1795967B1 (en) * 2005-12-09 2010-05-05 Imec Methods and devices for lithography
US7643976B2 (en) * 2006-02-28 2010-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for identifying lens aberration sensitive patterns in an integrated circuit chip
US7580113B2 (en) * 2006-06-23 2009-08-25 Asml Netherlands B.V. Method of reducing a wave front aberration, and computer program product
US8098926B2 (en) * 2007-01-10 2012-01-17 Applied Materials Israel, Ltd. Method and system for evaluating an evaluated pattern of a mask
US7832864B2 (en) * 2007-06-15 2010-11-16 The Arizona Board Of Regents On Behalf Of The University Of Arizona Inverse optical design
US8570485B2 (en) * 2008-06-03 2013-10-29 Asml Netherlands B.V. Lens heating compensation systems and methods
US8542340B2 (en) * 2008-07-07 2013-09-24 Asml Netherlands B.V. Illumination optimization
JP5153492B2 (ja) * 2008-07-11 2013-02-27 キヤノン株式会社 露光条件決定方法およびコンピュータプログラム
JP2010109294A (ja) * 2008-10-31 2010-05-13 Canon Inc 測定装置、露光装置およびデバイス製造方法
NL2003702A (en) * 2008-11-10 2010-05-11 Brion Tech Inc Pattern selection for lithographic model calibration.
NL2003719A (en) * 2008-11-10 2010-05-11 Brion Tech Inc Delta tcc for fast sensitivity model computation.
NL2006700A (en) * 2010-06-04 2011-12-06 Asml Netherlands Bv Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus.
NL2007306A (en) * 2010-09-23 2012-03-26 Asml Netherlands Bv Source polarization optimization.
NL2007577A (en) * 2010-11-10 2012-05-14 Asml Netherlands Bv Optimization of source, mask and projection optics.
NL2007642A (en) * 2010-11-10 2012-05-14 Asml Netherlands Bv Optimization flows of source, mask and projection optics.
NL2007579A (en) * 2010-11-10 2012-05-14 Asml Netherlands Bv Pattern-dependent proximity matching/tuning including light manipulation by projection optics.
NL2007578A (en) * 2010-11-17 2012-05-22 Asml Netherlands Bv Pattern-independent and hybrid matching/tuning including light manipulation by projection optics.
NL2008311A (en) * 2011-04-04 2012-10-08 Asml Netherlands Bv Integration of lithography apparatus and mask optimization process with multiple patterning process.
US8887105B1 (en) * 2011-10-28 2014-11-11 Asml Netherlands B.V. Calibration pattern selection based on noise sensitivity
NL2009982A (en) * 2012-01-10 2013-07-15 Asml Netherlands Bv Source mask optimization to reduce stochastic effects.
NL2010792A (en) * 2012-05-31 2013-12-04 Asml Netherlands Bv Gradient-based pattern and evaluation point selection.
KR101668984B1 (ko) * 2013-09-14 2016-10-24 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 장치의 동작 방법

Also Published As

Publication number Publication date
CN102866590A (zh) 2013-01-09
CN102866590B (zh) 2014-08-13
US8918742B2 (en) 2014-12-23
US20150153651A1 (en) 2015-06-04
JP2014112236A (ja) 2014-06-19
US20130014065A1 (en) 2013-01-10
JP5940049B2 (ja) 2016-06-29
US10423075B2 (en) 2019-09-24
JP5451821B2 (ja) 2014-03-26
JP2013021321A (ja) 2013-01-31

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