JP2014107566A5 - - Google Patents
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- Publication number
- JP2014107566A5 JP2014107566A5 JP2013241751A JP2013241751A JP2014107566A5 JP 2014107566 A5 JP2014107566 A5 JP 2014107566A5 JP 2013241751 A JP2013241751 A JP 2013241751A JP 2013241751 A JP2013241751 A JP 2013241751A JP 2014107566 A5 JP2014107566 A5 JP 2014107566A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric layer
- terminal
- barrier layer
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 9
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims 1
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 claims 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 235000011164 potassium chloride Nutrition 0.000 claims 1
- 239000001103 potassium chloride Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/685,560 US9029914B2 (en) | 2012-11-26 | 2012-11-26 | Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound |
| US13/685,560 | 2012-11-26 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014107566A JP2014107566A (ja) | 2014-06-09 |
| JP2014107566A5 true JP2014107566A5 (https=) | 2016-12-01 |
| JP6279294B2 JP6279294B2 (ja) | 2018-02-14 |
Family
ID=50679119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013241751A Expired - Fee Related JP6279294B2 (ja) | 2012-11-26 | 2013-11-22 | フッ化物系または塩化物系化合物を含むゲート誘電体を備えたｉｉｉ族窒化物系トランジスタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9029914B2 (https=) |
| JP (1) | JP6279294B2 (https=) |
| DE (1) | DE102013019401A1 (https=) |
| TW (1) | TWI605588B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150214127A1 (en) * | 2014-01-24 | 2015-07-30 | Qualcomm Incorporated | Integrated device comprising a substrate with aligning trench and/or cooling cavity |
| US9910133B2 (en) * | 2015-02-25 | 2018-03-06 | Infineon Technologies Ag | Systems and methods for cascading radar chips having a low leakage buffer |
| TWI569439B (zh) * | 2015-03-31 | 2017-02-01 | 晶元光電股份有限公司 | 半導體單元 |
| WO2017171873A1 (en) * | 2016-04-01 | 2017-10-05 | Intel Corporation | Dopant diffusion barrier for source/drain to curb dopant atom diffusion |
| JPWO2018037530A1 (ja) * | 2016-08-25 | 2018-08-23 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| CN107919395A (zh) * | 2017-10-26 | 2018-04-17 | 西安电子科技大学 | 基于CaF2栅介质的零栅源间距金刚石场效应晶体管及制作方法 |
| US20190334021A1 (en) * | 2018-02-09 | 2019-10-31 | Semiconductor Components Industries, Llc | Electronic Device Including a Conductive Layer Including a Ta Si Compound and a Process of Forming the Same |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5310696A (en) * | 1989-06-16 | 1994-05-10 | Massachusetts Institute Of Technology | Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth |
| JP2003502847A (ja) * | 1999-06-14 | 2003-01-21 | アウグスト，カルロス・ジヨタ・エルリ・ペー | 積み重ね型波長選択オプトエレクトロニクス装置 |
| EP1294016A1 (en) * | 2001-09-18 | 2003-03-19 | Paul Scherrer Institut | Formation of self-organized stacked islands for self-aligned contacts of low dimensional structures |
| KR100544145B1 (ko) * | 2004-05-24 | 2006-01-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 구비한 평판표시장치 |
| US8482035B2 (en) * | 2005-07-29 | 2013-07-09 | International Rectifier Corporation | Enhancement mode III-nitride transistors with single gate Dielectric structure |
| US7534710B2 (en) * | 2005-12-22 | 2009-05-19 | International Business Machines Corporation | Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same |
| JP2007305609A (ja) * | 2006-04-10 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| US20080023703A1 (en) * | 2006-07-31 | 2008-01-31 | Randy Hoffman | System and method for manufacturing a thin-film device |
| US7838904B2 (en) * | 2007-01-31 | 2010-11-23 | Panasonic Corporation | Nitride based semiconductor device with concave gate region |
| JP2008211172A (ja) * | 2007-01-31 | 2008-09-11 | Matsushita Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| US8519438B2 (en) * | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
| US7985986B2 (en) * | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
| KR101143706B1 (ko) * | 2008-09-24 | 2012-05-09 | 인터내셔널 비지네스 머신즈 코포레이션 | 나노전자 소자 |
| JP4968747B2 (ja) * | 2009-02-03 | 2012-07-04 | シャープ株式会社 | Ｉｉｉ−ｖ族化合物半導体素子 |
| JP5755460B2 (ja) * | 2010-02-12 | 2015-07-29 | インターナショナル レクティフィアー コーポレイション | 単一ゲートの誘電体構造を有するエンハンスメントモードのｉｉｉ族窒化物トランジスタ |
| JP2012169406A (ja) * | 2011-02-14 | 2012-09-06 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ |
| US20130099284A1 (en) | 2011-10-20 | 2013-04-25 | Triquint Semiconductor, Inc. | Group iii-nitride metal-insulator-semiconductor heterostructure field-effect transistors |
-
2012
- 2012-11-26 US US13/685,560 patent/US9029914B2/en active Active
-
2013
- 2013-10-16 TW TW102137229A patent/TWI605588B/zh not_active IP Right Cessation
- 2013-11-18 DE DE102013019401.6A patent/DE102013019401A1/de not_active Withdrawn
- 2013-11-22 JP JP2013241751A patent/JP6279294B2/ja not_active Expired - Fee Related
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