RU2017143211A - Транзистор с высокой подвижностью электронов на основе соединений нитрида алюминия-галлия/нитрида галлия - Google Patents

Транзистор с высокой подвижностью электронов на основе соединений нитрида алюминия-галлия/нитрида галлия Download PDF

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RU2017143211A
RU2017143211A RU2017143211A RU2017143211A RU2017143211A RU 2017143211 A RU2017143211 A RU 2017143211A RU 2017143211 A RU2017143211 A RU 2017143211A RU 2017143211 A RU2017143211 A RU 2017143211A RU 2017143211 A RU2017143211 A RU 2017143211A
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gallium nitride
transistor
aluminum
layer
high electron
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RU2017143211A
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RU2017143211A3 (ru
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Чуньцзян ЖЭНЬ
Таншэн ЧЭНЬ
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Чайна Электроникс Текнолоджи Груп Корпорейшн N 55 Рисерч Инститьют
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds

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Claims (6)

1. Транзистор с высокой подвижностью электронов на основе нитрида алюминия-галлия/нитрида галлия, содержащий в последовательном порядке снизу верх подложку (21); буферный слой (22) GaN; промежуточный слой (23) AlyGa1-yN, где 0,35 ≤ y ≤ 0,5; барьерный слой (24) AlxGa1-xN, где 0,2 ≤ x ≤ 0,28; верхний слой (25) GaN; электрод (26) истока и электрод (27) стока, размещенные на обоих концах верхнего слоя GaN, при этом верхний слой GaN и некоторая толщина барьерного слоя AlxGa1-xN, где расположены электрод (26) истока и электрод (27) стока, удалены с образованием углублений, а электрод (26) истока и электрод (27) стока размещены в углублениях; и электрод (28) затвора, который расположен между электродом (26) истока и электродом (27) стока.
2. Транзистор с высокой подвижностью электронов на основе нитрида алюминия-галлия/нитрида галлия по п. 1, дополнительно содержащий промежуточный слой (35) AlzGa1-zN, расположенный на барьерном слое (24) AlxGa1-xN, где 0,30 ≤ z ≤ 0,4, и толщина промежуточного слоя (35) AlzGa1-zN предпочтительно составляет 1-3 нм.
3. Транзистор с высокой подвижностью электронов на основе нитрида алюминия-галлия/нитрида галлия по п. 1, где буферный слой (22) GaN подвержен легированию с помощью Fe, при этом концентрация легирующей примеси составляет не более 4 x 1018 см-3, и толщина легированного слоя составляет 500-1000 нм вверх от подложки.
4. Транзистор с высокой подвижностью электронов на основе нитрида алюминия-галлия/нитрида галлия по п. 1, где подложка (21) представляет собой подложку на основе карбида кремния, кремния или сапфира.
5. Транзистор с высокой подвижностью электронов на основе нитрида алюминия-галлия/нитрида галлия по п. 1, где толщина буферного слоя (22) GaN составляет 1500-2000 нм.
6. Транзистор с высокой подвижностью электронов на основе нитрида алюминия-галлия/нитрида галлия по п. 1, где электрод (26) истока и электрод (27) стока частично расположены на верхнем слое (25) GaN с образованием «Г»-формы.
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