TWI605588B - 具有包括基於氟或氯化合物的閘電介質之基於第三族氮化物的電晶體 - Google Patents

具有包括基於氟或氯化合物的閘電介質之基於第三族氮化物的電晶體 Download PDF

Info

Publication number
TWI605588B
TWI605588B TW102137229A TW102137229A TWI605588B TW I605588 B TWI605588 B TW I605588B TW 102137229 A TW102137229 A TW 102137229A TW 102137229 A TW102137229 A TW 102137229A TW I605588 B TWI605588 B TW I605588B
Authority
TW
Taiwan
Prior art keywords
layer
terminal
gate
barrier layer
dielectric layer
Prior art date
Application number
TW102137229A
Other languages
English (en)
Chinese (zh)
Other versions
TW201431068A (zh
Inventor
愛德華Ａ 畢姆三世
保羅 紹尼爾
Original Assignee
三胞半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三胞半導體公司 filed Critical 三胞半導體公司
Publication of TW201431068A publication Critical patent/TW201431068A/zh
Application granted granted Critical
Publication of TWI605588B publication Critical patent/TWI605588B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW102137229A 2012-11-26 2013-10-16 具有包括基於氟或氯化合物的閘電介質之基於第三族氮化物的電晶體 TWI605588B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/685,560 US9029914B2 (en) 2012-11-26 2012-11-26 Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound

Publications (2)

Publication Number Publication Date
TW201431068A TW201431068A (zh) 2014-08-01
TWI605588B true TWI605588B (zh) 2017-11-11

Family

ID=50679119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102137229A TWI605588B (zh) 2012-11-26 2013-10-16 具有包括基於氟或氯化合物的閘電介質之基於第三族氮化物的電晶體

Country Status (4)

Country Link
US (1) US9029914B2 (https=)
JP (1) JP6279294B2 (https=)
DE (1) DE102013019401A1 (https=)
TW (1) TWI605588B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150214127A1 (en) * 2014-01-24 2015-07-30 Qualcomm Incorporated Integrated device comprising a substrate with aligning trench and/or cooling cavity
US9910133B2 (en) * 2015-02-25 2018-03-06 Infineon Technologies Ag Systems and methods for cascading radar chips having a low leakage buffer
TWI569439B (zh) * 2015-03-31 2017-02-01 晶元光電股份有限公司 半導體單元
WO2017171873A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Dopant diffusion barrier for source/drain to curb dopant atom diffusion
JPWO2018037530A1 (ja) * 2016-08-25 2018-08-23 三菱電機株式会社 半導体装置およびその製造方法
CN107919395A (zh) * 2017-10-26 2018-04-17 西安电子科技大学 基于CaF2栅介质的零栅源间距金刚石场效应晶体管及制作方法
US20190334021A1 (en) * 2018-02-09 2019-10-31 Semiconductor Components Industries, Llc Electronic Device Including a Conductive Layer Including a Ta Si Compound and a Process of Forming the Same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310696A (en) * 1989-06-16 1994-05-10 Massachusetts Institute Of Technology Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth
JP2003502847A (ja) * 1999-06-14 2003-01-21 アウグスト，カルロス・ジヨタ・エルリ・ペー 積み重ね型波長選択オプトエレクトロニクス装置
EP1294016A1 (en) * 2001-09-18 2003-03-19 Paul Scherrer Institut Formation of self-organized stacked islands for self-aligned contacts of low dimensional structures
KR100544145B1 (ko) * 2004-05-24 2006-01-23 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 구비한 평판표시장치
US8482035B2 (en) * 2005-07-29 2013-07-09 International Rectifier Corporation Enhancement mode III-nitride transistors with single gate Dielectric structure
US7534710B2 (en) * 2005-12-22 2009-05-19 International Business Machines Corporation Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same
JP2007305609A (ja) * 2006-04-10 2007-11-22 Matsushita Electric Ind Co Ltd 半導体装置
US20080023703A1 (en) * 2006-07-31 2008-01-31 Randy Hoffman System and method for manufacturing a thin-film device
US7838904B2 (en) * 2007-01-31 2010-11-23 Panasonic Corporation Nitride based semiconductor device with concave gate region
JP2008211172A (ja) * 2007-01-31 2008-09-11 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
US8519438B2 (en) * 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US7985986B2 (en) * 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
KR101143706B1 (ko) * 2008-09-24 2012-05-09 인터내셔널 비지네스 머신즈 코포레이션 나노전자 소자
JP4968747B2 (ja) * 2009-02-03 2012-07-04 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体素子
JP5755460B2 (ja) * 2010-02-12 2015-07-29 インターナショナル レクティフィアー コーポレイション 単一ゲートの誘電体構造を有するエンハンスメントモードのｉｉｉ族窒化物トランジスタ
JP2012169406A (ja) * 2011-02-14 2012-09-06 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
US20130099284A1 (en) 2011-10-20 2013-04-25 Triquint Semiconductor, Inc. Group iii-nitride metal-insulator-semiconductor heterostructure field-effect transistors

Also Published As

Publication number Publication date
US20140145243A1 (en) 2014-05-29
JP6279294B2 (ja) 2018-02-14
TW201431068A (zh) 2014-08-01
DE102013019401A1 (de) 2014-05-28
US9029914B2 (en) 2015-05-12
JP2014107566A (ja) 2014-06-09

Similar Documents

Publication Publication Date Title
JP6554530B2 (ja) 再成長構造を用いたｉｉｉ族窒化物トランジスタ
US9054167B2 (en) High electron mobility transistor structure and method
US20130320349A1 (en) In-situ barrier oxidation techniques and configurations
US20130313561A1 (en) Group iii-nitride transistor with charge-inducing layer
US20130099284A1 (en) Group iii-nitride metal-insulator-semiconductor heterostructure field-effect transistors
TWI605588B (zh) 具有包括基於氟或氯化合物的閘電介質之基於第三族氮化物的電晶體
US9112010B2 (en) Nitride-based semiconductor device
US8344420B1 (en) Enhancement-mode gallium nitride high electron mobility transistor
JP6510815B2 (ja) ドープされた窒化ガリウム高電子移動度トランジスタ
US10128363B2 (en) Field effect transistor
US20210043744A1 (en) Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus
US20240030332A1 (en) Semiconductor device, semiconductor module, and wireless communication apparatus
CN108352408B (zh) 半导体装置、电子部件、电子设备以及半导体装置的制造方法
US12349385B2 (en) Semiconductor device, electric circuit, and wireless communication apparatus
JP2008053436A (ja) 半導体素子

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees