JP6279294B2 - フッ化物系または塩化物系化合物を含むゲート誘電体を備えたｉｉｉ族窒化物系トランジスタ - Google Patents

フッ化物系または塩化物系化合物を含むゲート誘電体を備えたｉｉｉ族窒化物系トランジスタ Download PDF

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JP6279294B2
JP6279294B2 JP2013241751A JP2013241751A JP6279294B2 JP 6279294 B2 JP6279294 B2 JP 6279294B2 JP 2013241751 A JP2013241751 A JP 2013241751A JP 2013241751 A JP2013241751 A JP 2013241751A JP 6279294 B2 JP6279294 B2 JP 6279294B2
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layer
dielectric layer
gate
terminal
barrier layer
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Japanese (ja)
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JP2014107566A5 (https=
JP2014107566A (ja
Inventor
３世、エドワード エー． ビーム
３世、エドワード エー． ビーム
ソーニヤー、ポール
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Qorvo US Inc
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Triquint Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2013241751A 2012-11-26 2013-11-22 フッ化物系または塩化物系化合物を含むゲート誘電体を備えたｉｉｉ族窒化物系トランジスタ Expired - Fee Related JP6279294B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/685,560 US9029914B2 (en) 2012-11-26 2012-11-26 Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound
US13/685,560 2012-11-26

Publications (3)

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JP2014107566A JP2014107566A (ja) 2014-06-09
JP2014107566A5 JP2014107566A5 (https=) 2016-12-01
JP6279294B2 true JP6279294B2 (ja) 2018-02-14

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JP2013241751A Expired - Fee Related JP6279294B2 (ja) 2012-11-26 2013-11-22 フッ化物系または塩化物系化合物を含むゲート誘電体を備えたｉｉｉ族窒化物系トランジスタ

Country Status (4)

Country Link
US (1) US9029914B2 (https=)
JP (1) JP6279294B2 (https=)
DE (1) DE102013019401A1 (https=)
TW (1) TWI605588B (https=)

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* Cited by examiner, † Cited by third party
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US20150214127A1 (en) * 2014-01-24 2015-07-30 Qualcomm Incorporated Integrated device comprising a substrate with aligning trench and/or cooling cavity
US9910133B2 (en) * 2015-02-25 2018-03-06 Infineon Technologies Ag Systems and methods for cascading radar chips having a low leakage buffer
TWI569439B (zh) * 2015-03-31 2017-02-01 晶元光電股份有限公司 半導體單元
WO2017171873A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Dopant diffusion barrier for source/drain to curb dopant atom diffusion
JPWO2018037530A1 (ja) * 2016-08-25 2018-08-23 三菱電機株式会社 半導体装置およびその製造方法
CN107919395A (zh) * 2017-10-26 2018-04-17 西安电子科技大学 基于CaF2栅介质的零栅源间距金刚石场效应晶体管及制作方法
US20190334021A1 (en) * 2018-02-09 2019-10-31 Semiconductor Components Industries, Llc Electronic Device Including a Conductive Layer Including a Ta Si Compound and a Process of Forming the Same

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US5310696A (en) * 1989-06-16 1994-05-10 Massachusetts Institute Of Technology Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth
JP2003502847A (ja) * 1999-06-14 2003-01-21 アウグスト，カルロス・ジヨタ・エルリ・ペー 積み重ね型波長選択オプトエレクトロニクス装置
EP1294016A1 (en) * 2001-09-18 2003-03-19 Paul Scherrer Institut Formation of self-organized stacked islands for self-aligned contacts of low dimensional structures
KR100544145B1 (ko) * 2004-05-24 2006-01-23 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 구비한 평판표시장치
US8482035B2 (en) * 2005-07-29 2013-07-09 International Rectifier Corporation Enhancement mode III-nitride transistors with single gate Dielectric structure
US7534710B2 (en) * 2005-12-22 2009-05-19 International Business Machines Corporation Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same
JP2007305609A (ja) * 2006-04-10 2007-11-22 Matsushita Electric Ind Co Ltd 半導体装置
US20080023703A1 (en) * 2006-07-31 2008-01-31 Randy Hoffman System and method for manufacturing a thin-film device
US7838904B2 (en) * 2007-01-31 2010-11-23 Panasonic Corporation Nitride based semiconductor device with concave gate region
JP2008211172A (ja) * 2007-01-31 2008-09-11 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
US8519438B2 (en) * 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US7985986B2 (en) * 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
KR101143706B1 (ko) * 2008-09-24 2012-05-09 인터내셔널 비지네스 머신즈 코포레이션 나노전자 소자
JP4968747B2 (ja) * 2009-02-03 2012-07-04 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体素子
JP5755460B2 (ja) * 2010-02-12 2015-07-29 インターナショナル レクティフィアー コーポレイション 単一ゲートの誘電体構造を有するエンハンスメントモードのｉｉｉ族窒化物トランジスタ
JP2012169406A (ja) * 2011-02-14 2012-09-06 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
US20130099284A1 (en) 2011-10-20 2013-04-25 Triquint Semiconductor, Inc. Group iii-nitride metal-insulator-semiconductor heterostructure field-effect transistors

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Publication number Publication date
US20140145243A1 (en) 2014-05-29
TW201431068A (zh) 2014-08-01
TWI605588B (zh) 2017-11-11
DE102013019401A1 (de) 2014-05-28
US9029914B2 (en) 2015-05-12
JP2014107566A (ja) 2014-06-09

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