JP2014096499A - プラズマエッチング方法及びプラズマエッチング装置 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 77
- 238000001020 plasma etching Methods 0.000 title claims abstract description 65
- 239000007789 gas Substances 0.000 claims abstract description 229
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 115
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 89
- 238000005530 etching Methods 0.000 claims abstract description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 61
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 23
- 239000011593 sulfur Substances 0.000 claims abstract description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims description 121
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 10
- 230000006837 decompression Effects 0.000 claims description 4
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- -1 for example Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】プラズマエッチング方法は、所定のパターンを有するSiON膜をマスクとして酸素含有ガスのプラズマによりアモルファスカーボン膜をエッチングする。プラズマエッチング方法は、エッチングされたアモルファスカーボン膜上に残存するSiON膜を処理ガスのプラズマにより除去しつつアモルファスカーボン膜をマスクとして処理ガスのプラズマによりシリコン酸化膜をエッチングする。プラズマエッチング方法は、アモルファスカーボン膜からSiON膜が除去された後に、シリコンを含む上部電極に負の直流電圧を印加しながら硫黄含有ガス又は水素含有ガスのプラズマによりアモルファスカーボン膜を改質する。プラズマエッチング方法は、改質されたアモルファスカーボン膜をマスクとして処理ガスのプラズマによりシリコン酸化膜をエッチングする。
【選択図】図3
Description
比較例1では、被処理体に対して、アモルファスカーボン膜をエッチングするアモルファスカーボン膜エッチング工程と、シリコン酸化膜をエッチングする第1のシリコン酸化膜エッチング工程と、シリコン酸化膜をエッチングする第2のシリコン酸化膜エッチング工程とを順に行った。アモルファスカーボン膜エッチング工程と、第1のシリコン酸化膜エッチング工程と、第2のシリコン酸化膜エッチング工程とは、それぞれ以下の条件を用いて行った。
(アモルファスカーボン膜エッチング工程)
処理ガス流量比:COS/O2=15:345
圧力:1.3Pa(10mTorr)
第1の高周波電源からの高周波電力:1200W
第2の高周波電源からの高周波電力:0W
上部電極への直流電圧:0V
(第1のシリコン酸化膜エッチング工程)
処理ガス流量比:C4F8/CHF3:Ar:O2=15:30:150:16
圧力:2.6Pa(20mTorr)
第1の高周波電源からの高周波電力:900W
第2の高周波電源からの高周波電力:350W
上部電極への直流電圧:−300V
(第2のシリコン酸化膜エッチング工程)
処理ガス流量比:C4F8/CHF3/Ar/O2=15:30:150:25
圧力:2.6Pa(20mTorr)
第1の高周波電源からの高周波電力:900W
第2の高周波電源からの高周波電力:1400W
上部電極への直流電圧:−300V
実施例1では、被処理体に対して、アモルファスカーボン膜エッチング工程と、第1のシリコン酸化膜エッチング工程とを順に行った後に、アモルファスカーボン膜を改質するアモルファスカーボン改質工程を行い、その後、第2のシリコン酸化膜エッチング工程を行った。アモルファスカーボン膜エッチング工程、第1のシリコン酸化膜エッチング工程及び第2のシリコン酸化膜エッチング工程は、比較例1と同一の条件で行った。アモルファスカーボン膜改質工程は、以下の条件を用いて行った。
(アモルファスカーボン膜改質工程)
処理ガス流量比:COS/CF4/Ar=20:30:800
圧力:6.7Pa(50mTorr)
第1の高周波電源からの高周波電力:300W
第2の高周波電源からの高周波電力:0W
上部電極への直流電圧:−900V
アモルファスカーボン膜改質工程において、以下に示す処理ガス及び処理ガス流量比を用いた。その他の条件は実施例1と同一である。
実施例2:H2/Ar=100:800
10a 第1の高周波電源
10b 第2の高周波電源
15 処理ガス供給源(ガス供給部)
16 シャワーヘッド(上部電極)
16a 本体部
16b 上部天板
52 可変直流電源
60 制御部
61 プロセスコントローラ
62 ユーザインターフェース
63 記憶部
71 排気口
72 排気管
73 排気装置(減圧部)
101 Si基板
102 SiO2膜
103 アモルファスカーボン膜
103a 改質膜
104 SiON膜
105 開口部
Claims (7)
- 被処理体上に形成された所定のパターンを有するSiON膜をマスクとして酸素含有ガスのプラズマによりアモルファスカーボン膜をエッチングするアモルファスカーボン膜エッチング工程と、
エッチングされた前記アモルファスカーボン膜上に残存する前記SiON膜を処理ガスのプラズマにより除去しつつ前記アモルファスカーボン膜をマスクとして前記処理ガスのプラズマによりシリコン酸化膜をエッチングする第1のシリコン酸化膜エッチング工程と、
前記アモルファスカーボン膜から前記SiON膜が除去された後に、シリコンを含む上部電極に負の直流電圧を印加しながら硫黄含有ガス又は水素含有ガスのプラズマにより前記アモルファスカーボン膜を改質するアモルファスカーボン膜改質工程と、
改質された前記アモルファスカーボン膜をマスクとして前記処理ガスのプラズマにより前記シリコン酸化膜をエッチングする第2のシリコン酸化膜エッチング工程と
を含むことを特徴とするプラズマエッチング方法。 - 前記処理ガスは、CF系ガス、又はCF系ガス/CHF系ガスであることを特徴とする請求項1に記載のプラズマエッチング方法。
- 前記酸素含有ガスは、COS/O2ガス、CO/O2ガス及びO2ガスのうちいずれか一つのガスであることを特徴とする請求項1又は2に記載のプラズマエッチング方法。
- 前記CF系ガスは、C4F6/Ar/O2ガス及びC4F8/Ar/O2ガスのうちいずれか一つのガスであることを特徴とする請求項2に記載のプラズマエッチング方法。
- 前記CF系ガス/CHF系ガスは、C4F8/CHF3/Ar/O2ガス、CF4/CHF3/Ar/O2ガス、及びCF4/CH2F2/Ar/O2ガスのうちいずれか一つのガスであることを特徴とする請求項2に記載のプラズマエッチング方法。
- 前記硫黄含有ガスは、COS/CF4/Arガスであり、前記水素含有ガスは、H2/Arガスであることを特徴とする請求項1〜5のいずれか一つに記載のプラズマエッチング方法。
- 被処理体に対してプラズマエッチング処理を行うための処理チャンバと、
前記処理チャンバ内を減圧する減圧部と、
前記処理チャンバ内に処理ガスを供給するガス供給部と、
前記被処理体上に形成された所定のパターンを有するSiON膜をマスクとして酸素含有ガスのプラズマによりアモルファスカーボン膜をエッチングし、エッチングされた前記アモルファスカーボン膜上に残存する前記SiON膜を処理ガスのプラズマにより除去しつつ前記アモルファスカーボン膜をマスクとして前記処理ガスのプラズマによりシリコン酸化膜をエッチングし、前記アモルファスカーボン膜から前記SiON膜が除去された後に、シリコンを含む上部電極に負の直流電圧を印加しながら硫黄含有ガス又は水素含有ガスのプラズマにより前記アモルファスカーボン膜を改質し、改質された前記アモルファスカーボン膜をマスクとして前記処理ガスのプラズマにより前記シリコン酸化膜をエッチングする各工程を実行する制御部と
を備えたことを特徴とするプラズマエッチング装置。
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |