JP2014089790A5 - - Google Patents

Download PDF

Info

Publication number
JP2014089790A5
JP2014089790A5 JP2012240610A JP2012240610A JP2014089790A5 JP 2014089790 A5 JP2014089790 A5 JP 2014089790A5 JP 2012240610 A JP2012240610 A JP 2012240610A JP 2012240610 A JP2012240610 A JP 2012240610A JP 2014089790 A5 JP2014089790 A5 JP 2014089790A5
Authority
JP
Japan
Prior art keywords
voltage
replica
semiconductor device
assist voltage
response
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012240610A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014089790A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012240610A priority Critical patent/JP2014089790A/ja
Priority claimed from JP2012240610A external-priority patent/JP2014089790A/ja
Publication of JP2014089790A publication Critical patent/JP2014089790A/ja
Publication of JP2014089790A5 publication Critical patent/JP2014089790A5/ja
Pending legal-status Critical Current

Links

JP2012240610A 2012-10-31 2012-10-31 半導体装置 Pending JP2014089790A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012240610A JP2014089790A (ja) 2012-10-31 2012-10-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012240610A JP2014089790A (ja) 2012-10-31 2012-10-31 半導体装置

Publications (2)

Publication Number Publication Date
JP2014089790A JP2014089790A (ja) 2014-05-15
JP2014089790A5 true JP2014089790A5 (cg-RX-API-DMAC7.html) 2015-10-01

Family

ID=50791560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012240610A Pending JP2014089790A (ja) 2012-10-31 2012-10-31 半導体装置

Country Status (1)

Country Link
JP (1) JP2014089790A (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109498060B (zh) * 2018-12-25 2021-04-13 西北大学 基于ctlm与超声波技术的乳腺成像设备及方法
US10811088B2 (en) * 2019-03-12 2020-10-20 Qualcomm Incorporated Access assist with wordline adjustment with tracking cell
JP7196040B2 (ja) * 2019-03-14 2022-12-26 株式会社東芝 半導体記憶装置
CN114566202B (zh) * 2022-04-26 2022-08-02 长鑫存储技术有限公司 一种感测放大器的测试方法、装置、存储装置及存储系统
CN118887982B (zh) * 2023-04-25 2025-10-03 长鑫存储技术有限公司 字线驱动电路以及存储器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002109887A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路
JP2003059273A (ja) * 2001-08-09 2003-02-28 Hitachi Ltd 半導体記憶装置
JP4439167B2 (ja) * 2002-08-30 2010-03-24 株式会社ルネサステクノロジ 半導体記憶装置
JP4373154B2 (ja) * 2003-07-18 2009-11-25 株式会社半導体エネルギー研究所 メモリ回路およびそのメモリ回路を有する表示装置、電子機器
JP5328386B2 (ja) * 2009-01-15 2013-10-30 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびその動作方法
JP2012123877A (ja) * 2010-12-09 2012-06-28 Toshiba Corp 半導体記憶装置

Similar Documents

Publication Publication Date Title
JP2008521157A5 (cg-RX-API-DMAC7.html)
JP2014089790A5 (cg-RX-API-DMAC7.html)
KR101716714B1 (ko) 클럭 신호에 동기하는 반도체 메모리 장치
JP2014142989A5 (cg-RX-API-DMAC7.html)
JP2004005777A5 (cg-RX-API-DMAC7.html)
JP2010009674A5 (cg-RX-API-DMAC7.html)
TW200620310A (en) Memory array with fast bit line precharge
JP2009033329A5 (cg-RX-API-DMAC7.html)
WO2014066462A4 (en) Apparatus and method for reforming resistive memory cells
JP2009230805A5 (cg-RX-API-DMAC7.html)
KR100920843B1 (ko) 반도체 메모리 장치의 오토리프레쉬 동작 제어회로
JP4992494B2 (ja) 半導体記憶装置
JP2009110616A5 (cg-RX-API-DMAC7.html)
JP2016157504A5 (cg-RX-API-DMAC7.html)
JP2015531958A5 (cg-RX-API-DMAC7.html)
GB2565257A (en) A memory unit
TW201824262A (zh) 具有減小峰值的喚醒電流的記憶體胞
US9368173B1 (en) Semiconductor memory device
JP2008097804A5 (cg-RX-API-DMAC7.html)
US20140211578A1 (en) Boosted read write word line
TW200723306A (en) Semiconductor memory device and method of controlling sub word line driver thereof
KR101020297B1 (ko) 워드라인 구동회로
JP2021047265A5 (cg-RX-API-DMAC7.html)
TW200501170A (en) Apparatus for generating driving voltage for sense amplifier in a memory device
KR100940844B1 (ko) 반도체 메모리 장치의 센스앰프 구동회로