JP2011514615A5 - - Google Patents

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Publication number
JP2011514615A5
JP2011514615A5 JP2010550709A JP2010550709A JP2011514615A5 JP 2011514615 A5 JP2011514615 A5 JP 2011514615A5 JP 2010550709 A JP2010550709 A JP 2010550709A JP 2010550709 A JP2010550709 A JP 2010550709A JP 2011514615 A5 JP2011514615 A5 JP 2011514615A5
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JP
Japan
Prior art keywords
cells
cell
current
bit
reference cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010550709A
Other languages
English (en)
Japanese (ja)
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JP2011514615A (ja
JP5480168B2 (ja
Filing date
Publication date
Priority claimed from US12/048,683 external-priority patent/US7742340B2/en
Application filed filed Critical
Publication of JP2011514615A publication Critical patent/JP2011514615A/ja
Publication of JP2011514615A5 publication Critical patent/JP2011514615A5/ja
Application granted granted Critical
Publication of JP5480168B2 publication Critical patent/JP5480168B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010550709A 2008-03-14 2009-01-26 電流劣化を保護する読取り基準手法 Expired - Fee Related JP5480168B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/048,683 2008-03-14
US12/048,683 US7742340B2 (en) 2008-03-14 2008-03-14 Read reference technique with current degradation protection
PCT/US2009/031945 WO2009114213A1 (en) 2008-03-14 2009-01-26 Read reference technique with current degradation protection

Publications (3)

Publication Number Publication Date
JP2011514615A JP2011514615A (ja) 2011-05-06
JP2011514615A5 true JP2011514615A5 (cg-RX-API-DMAC7.html) 2012-03-15
JP5480168B2 JP5480168B2 (ja) 2014-04-23

Family

ID=41062885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010550709A Expired - Fee Related JP5480168B2 (ja) 2008-03-14 2009-01-26 電流劣化を保護する読取り基準手法

Country Status (4)

Country Link
US (1) US7742340B2 (cg-RX-API-DMAC7.html)
EP (1) EP2266117A4 (cg-RX-API-DMAC7.html)
JP (1) JP5480168B2 (cg-RX-API-DMAC7.html)
WO (1) WO2009114213A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104685572B (zh) * 2012-10-30 2017-05-10 松下知识产权经营株式会社 非易失性半导体存储装置
US9595340B2 (en) * 2015-01-20 2017-03-14 Taiwan Semiconductor Manufacturing Company Limited Nonvolatile memory device and method of setting a reference current in a nonvolatile memory device
US11082383B2 (en) 2018-03-13 2021-08-03 ROVl GUIDES, INC. Systems and methods for displaying a notification at an area on a display screen that is within a line of sight of a subset of audience members to whom the notification pertains
US11114176B1 (en) * 2020-03-06 2021-09-07 Qualcomm Incorporated Systems and methods to provide write termination for one time programmable memory cells

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0632464B1 (en) * 1993-06-28 1999-09-08 STMicroelectronics S.r.l. Method of measuring the current of microcontroller memory cells and relative system
US6097632A (en) * 1997-04-18 2000-08-01 Micron Technology, Inc. Source regulation circuit for an erase operation of flash memory
JP2000268584A (ja) 1999-03-15 2000-09-29 Nec Corp 不揮発性半導体記憶装置およびその製造方法
US6396741B1 (en) 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
JP4212760B2 (ja) * 2000-06-02 2009-01-21 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
FR2820539B1 (fr) 2001-02-02 2003-05-30 St Microelectronics Sa Procede et dispositif de rafraichissement de cellules de reference
EP1251523B1 (en) * 2001-04-19 2007-08-15 STMicroelectronics S.r.l. Method and circuit for timing dynamic reading of a memory cell with control of the integration time
US6813189B2 (en) * 2002-07-16 2004-11-02 Fujitsu Limited System for using a dynamic reference in a double-bit cell memory
JP2004062922A (ja) * 2002-07-25 2004-02-26 Renesas Technology Corp 不揮発性半導体記憶装置
US7180782B2 (en) 2005-06-10 2007-02-20 Macronix International Co., Ltd. Read source line compensation in a non-volatile memory

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