JP2014081409A5 - - Google Patents
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- Publication number
- JP2014081409A5 JP2014081409A5 JP2012227309A JP2012227309A JP2014081409A5 JP 2014081409 A5 JP2014081409 A5 JP 2014081409A5 JP 2012227309 A JP2012227309 A JP 2012227309A JP 2012227309 A JP2012227309 A JP 2012227309A JP 2014081409 A5 JP2014081409 A5 JP 2014081409A5
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- thin film
- photomask
- film
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010409 thin film Substances 0.000 claims description 286
- 239000010408 film Substances 0.000 claims description 279
- 238000012546 transfer Methods 0.000 claims description 183
- 238000000034 method Methods 0.000 claims description 157
- 238000004519 manufacturing process Methods 0.000 claims description 145
- 238000005530 etching Methods 0.000 claims description 104
- 239000000758 substrate Substances 0.000 claims description 78
- 239000000463 material Substances 0.000 claims description 61
- 238000012545 processing Methods 0.000 claims description 54
- 238000000059 patterning Methods 0.000 claims description 45
- 238000000206 photolithography Methods 0.000 claims description 30
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 14
- 230000036211 photosensitivity Effects 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 20
- 239000011651 chromium Substances 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
- 230000007261 regionalization Effects 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 229910016006 MoSi Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004513 sizing Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- -1 silicide compound Chemical class 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000013518 transcription Methods 0.000 description 2
- 230000035897 transcription Effects 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012227309A JP6157832B2 (ja) | 2012-10-12 | 2012-10-12 | 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク |
| TW102131117A TWI512391B (zh) | 2012-10-12 | 2013-08-29 | A manufacturing method of an electronic device, a manufacturing method of a display device, a method of manufacturing a mask, and a mask |
| KR1020130118827A KR101560452B1 (ko) | 2012-10-12 | 2013-10-04 | 전자 디바이스의 제조 방법, 표시 장치의 제조 방법, 포토마스크의 제조 방법 및 포토마스크 |
| CN201310475805.7A CN103728832B (zh) | 2012-10-12 | 2013-10-12 | 电子器件、光掩模以及显示装置的制造方法 |
| CN201910348874.9A CN110147029B (zh) | 2012-10-12 | 2013-10-12 | 光掩模和光掩模的制造方法 |
| CN201610307797.9A CN105892226B (zh) | 2012-10-12 | 2013-10-12 | 电子器件、光掩模和显示装置的制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012227309A JP6157832B2 (ja) | 2012-10-12 | 2012-10-12 | 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016081827A Division JP6302502B2 (ja) | 2016-04-15 | 2016-04-15 | 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014081409A JP2014081409A (ja) | 2014-05-08 |
| JP2014081409A5 true JP2014081409A5 (enrdf_load_stackoverflow) | 2015-07-09 |
| JP6157832B2 JP6157832B2 (ja) | 2017-07-05 |
Family
ID=50452966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012227309A Active JP6157832B2 (ja) | 2012-10-12 | 2012-10-12 | 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6157832B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101560452B1 (enrdf_load_stackoverflow) |
| CN (3) | CN105892226B (enrdf_load_stackoverflow) |
| TW (1) | TWI512391B (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6726553B2 (ja) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | フォトマスクの製造方法、及び表示装置の製造方法 |
| JP6718225B2 (ja) * | 2015-12-02 | 2020-07-08 | 株式会社エスケーエレクトロニクス | フォトマスクおよびその製造方法 |
| JP6514143B2 (ja) * | 2016-05-18 | 2019-05-15 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
| TW201823855A (zh) * | 2016-09-21 | 2018-07-01 | 日商Ｈｏｙａ股份有限公司 | 光罩之製造方法、光罩、及顯示裝置之製造方法 |
| KR101918380B1 (ko) | 2017-01-06 | 2018-11-13 | 가부시키가이샤 에스케이 일렉트로닉스 | 얼라이먼트 패턴을 갖는 포토 마스크 블랭크 및 이를 이용한 포토 마스크 및 그 제조 방법 |
| JP6744955B2 (ja) * | 2019-06-19 | 2020-08-19 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及び表示装置の製造方法 |
| JP7261709B2 (ja) * | 2019-09-13 | 2023-04-20 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法及び表示装置の製造方法 |
| CN112526818B (zh) * | 2020-12-02 | 2024-12-20 | 北海惠科光电技术有限公司 | 半色调掩膜版和薄膜晶体管阵列基板制造方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001083688A (ja) * | 1999-07-13 | 2001-03-30 | Matsushita Electronics Industry Corp | フォトマスク、レジストパターンの形成方法、アライメント精度計測方法及び半導体装置の製造方法 |
| JP3586647B2 (ja) * | 2000-12-26 | 2004-11-10 | Ｈｏｙａ株式会社 | グレートーンマスク及びその製造方法 |
| WO2003046659A1 (en) * | 2001-11-27 | 2003-06-05 | Hoya Corporation | Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof |
| US7160649B2 (en) * | 2002-07-11 | 2007-01-09 | Hitachi Via Mechanics, Ltd. | Gray level imaging masks, optical imaging apparatus for gray level imaging masks and methods for encoding mask and use of the masks |
| TWI286663B (en) * | 2003-06-30 | 2007-09-11 | Hoya Corp | Method for manufacturing gray tone mask, and gray tone mask |
| JP4443873B2 (ja) * | 2003-08-15 | 2010-03-31 | Ｈｏｙａ株式会社 | 位相シフトマスクの製造方法 |
| US7862960B2 (en) * | 2004-06-22 | 2011-01-04 | Hoya Corporation | Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks |
| JP2006084507A (ja) | 2004-09-14 | 2006-03-30 | Matsushita Electric Ind Co Ltd | 位相シフトマスク及び位相シフトマスクの製造方法 |
| JP2007123356A (ja) * | 2005-10-25 | 2007-05-17 | Sharp Corp | 半導体装置の製造方法 |
| KR101255616B1 (ko) * | 2006-07-28 | 2013-04-16 | 삼성디스플레이 주식회사 | 다중톤 광마스크, 이의 제조방법 및 이를 이용한박막트랜지스터 기판의 제조방법 |
| JP4864776B2 (ja) * | 2007-03-14 | 2012-02-01 | 株式会社東芝 | フォトマスク |
| JP2009229893A (ja) * | 2008-03-24 | 2009-10-08 | Hoya Corp | 多階調フォトマスクの製造方法及びパターン転写方法 |
| JP2009258693A (ja) * | 2008-03-27 | 2009-11-05 | Hoya Corp | 多階調フォトマスク及びそれを用いたパターン転写方法 |
| JP5215019B2 (ja) * | 2008-03-28 | 2013-06-19 | Ｈｏｙａ株式会社 | 多階調フォトマスク及びその製造方法、並びにパターン転写方法 |
| JP4878379B2 (ja) * | 2009-02-09 | 2012-02-15 | Ｈｏｙａ株式会社 | グレートーンマスクの製造方法 |
| JP2010276724A (ja) * | 2009-05-26 | 2010-12-09 | Hoya Corp | 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法 |
| JP2011027878A (ja) * | 2009-07-23 | 2011-02-10 | Hoya Corp | 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法 |
| JP2011081326A (ja) * | 2009-10-10 | 2011-04-21 | Hoya Corp | 多階調フォトマスクの製造方法及び多階調フォトマスク用ブランク、並びに電子デバイスの製造方法 |
| TWI502623B (zh) * | 2010-01-07 | 2015-10-01 | Hoya Corp | 光罩之製造方法、光罩、及顯示裝置之製造方法 |
| JP2012008545A (ja) * | 2010-05-24 | 2012-01-12 | Hoya Corp | 多階調フォトマスクの製造方法、及びパターン転写方法 |
| JP2012008546A (ja) * | 2010-05-24 | 2012-01-12 | Hoya Corp | 多階調フォトマスクの製造方法、及びパターン転写方法 |
-
2012
- 2012-10-12 JP JP2012227309A patent/JP6157832B2/ja active Active
-
2013
- 2013-08-29 TW TW102131117A patent/TWI512391B/zh active
- 2013-10-04 KR KR1020130118827A patent/KR101560452B1/ko active Active
- 2013-10-12 CN CN201610307797.9A patent/CN105892226B/zh active Active
- 2013-10-12 CN CN201910348874.9A patent/CN110147029B/zh active Active
- 2013-10-12 CN CN201310475805.7A patent/CN103728832B/zh active Active
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