WO2003046659A1 - Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof - Google Patents

Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof Download PDF

Info

Publication number
WO2003046659A1
WO2003046659A1 PCT/JP2002/005479 JP0205479W WO03046659A1 WO 2003046659 A1 WO2003046659 A1 WO 2003046659A1 JP 0205479 W JP0205479 W JP 0205479W WO 03046659 A1 WO03046659 A1 WO 03046659A1
Authority
WO
WIPO (PCT)
Prior art keywords
shift mask
phase shift
halftone phase
phase shifter
light
Prior art date
Application number
PCT/JP2002/005479
Other languages
French (fr)
Japanese (ja)
Inventor
Yuuki Shiota
Osamu Nozawa
Ryo Ohkubo
Hideaki Mitsui
Original Assignee
Hoya Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001361025A external-priority patent/JP2002258458A/en
Priority claimed from JP2001394311A external-priority patent/JP4027660B2/en
Priority claimed from JP2002047051A external-priority patent/JP3818171B2/en
Priority claimed from JP2002082021A external-priority patent/JP3993005B2/en
Application filed by Hoya Corporation filed Critical Hoya Corporation
Priority to KR1020047007952A priority Critical patent/KR100815679B1/en
Publication of WO2003046659A1 publication Critical patent/WO2003046659A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A halftone phase shift mask blank comprising a light transmission portion for allowing exposure light to transmit, a phase shifter portion for shifting the phase of the light transmitted by predetermined quantity simultaneously when a part of the exposure light is transmitted, and a phase shifter film for forming the phase shifter portion, and used for manufacturing a halftone phase shift mask having such optical characteristics that the light transmitted through the light transmission portion and the light transmitted through the phase shifter portion are canceled by each other in the vicinity of a boundary thereof, and capable of maintaining and improving excellent contrast of an exposure light pattern boundary transferred on to a surface of a body to be exposed. The phase shifter film comprises a film mainly consisting of silicon, oxygen and nitrogen, and an etching stopper film formed between the film and a transparent substrate.
PCT/JP2002/005479 2001-11-27 2002-06-04 Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof WO2003046659A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020047007952A KR100815679B1 (en) 2001-11-27 2002-06-04 Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2001-361025 2001-11-27
JP2001361025A JP2002258458A (en) 2000-12-26 2001-11-27 Halftone phase shift mask and mask blank
JP2001394311A JP4027660B2 (en) 2000-12-26 2001-12-26 Halftone phase shift mask blank and mask
JP2001-394311 2001-12-26
JP2002047051A JP3818171B2 (en) 2002-02-22 2002-02-22 Phase shift mask blank and manufacturing method thereof
JP2002-47051 2002-02-22
JP2002-82021 2002-03-22
JP2002082021A JP3993005B2 (en) 2002-03-22 2002-03-22 Halftone phase shift mask blank, halftone phase shift mask, method of manufacturing the same, and pattern transfer method

Publications (1)

Publication Number Publication Date
WO2003046659A1 true WO2003046659A1 (en) 2003-06-05

Family

ID=27482698

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/005479 WO2003046659A1 (en) 2001-11-27 2002-06-04 Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof

Country Status (3)

Country Link
KR (1) KR100815679B1 (en)
CN (1) CN100440038C (en)
WO (1) WO2003046659A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007241060A (en) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd Photomask blank and method for manufacturing photomask
US7618753B2 (en) 2004-09-10 2009-11-17 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and method for producing those
JP2010237692A (en) * 2010-05-28 2010-10-21 Shin-Etsu Chemical Co Ltd Photomask blank and method of manufacturing photomask
JP2012003287A (en) * 2011-09-21 2012-01-05 Shin Etsu Chem Co Ltd Method for manufacturing photo mask, and photo mask
JP2012032823A (en) * 2011-09-21 2012-02-16 Shin Etsu Chem Co Ltd Method of manufacturing photomask blank and binary mask
KR101165235B1 (en) * 2004-03-31 2012-09-13 도판 인사츠 가부시키가이샤 Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
CN109188854A (en) * 2018-10-18 2019-01-11 合肥鑫晟光电科技有限公司 Mask plate, display base plate and preparation method thereof, display device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100720334B1 (en) * 2005-05-13 2007-05-21 주식회사 에스앤에스텍 Half-tone type phase shift blank mask and manufacturing method of the same
JP4509050B2 (en) * 2006-03-10 2010-07-21 信越化学工業株式会社 Photomask blank and photomask
CN101046626B (en) * 2006-03-30 2012-03-14 应用材料公司 Method for etching molybdenum when manufacturing photomask
US7635546B2 (en) 2006-09-15 2009-12-22 Applied Materials, Inc. Phase shifting photomask and a method of fabricating thereof
TWI437358B (en) * 2007-09-27 2014-05-11 Hoya Corp Mask blank, method of manufacturing mask blank and method of manufacturing an imprint mold
US7820540B2 (en) * 2007-12-21 2010-10-26 Palo Alto Research Center Incorporated Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells
DE102010061296A1 (en) * 2010-12-16 2012-06-21 Schott Solar Ag Method for producing electrically conductive contacts on solar cells and solar cell
KR101926614B1 (en) * 2012-07-27 2018-12-11 엘지이노텍 주식회사 Phase shift mask
JP6157832B2 (en) * 2012-10-12 2017-07-05 Hoya株式会社 Electronic device manufacturing method, display device manufacturing method, photomask manufacturing method, and photomask
CN104903792B (en) * 2013-01-15 2019-11-01 Hoya株式会社 Exposure mask plate blank material, phase-shift mask plate and its manufacturing method
US10146123B2 (en) * 2014-12-26 2018-12-04 Hoya Corporation Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
JP6418035B2 (en) * 2015-03-31 2018-11-07 信越化学工業株式会社 Phase shift mask blanks and phase shift masks
WO2016185941A1 (en) * 2015-05-15 2016-11-24 Hoya株式会社 Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
CN110308615A (en) * 2019-05-27 2019-10-08 武汉华星光电半导体显示技术有限公司 Photomask structure

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0239153A (en) * 1988-07-29 1990-02-08 Toppan Printing Co Ltd Photomask blank and photomask
JPH0683034A (en) * 1992-07-17 1994-03-25 Toshiba Corp Exposure, mask, exposure mask substrate and its production
JPH07104457A (en) * 1993-08-13 1995-04-21 Toshiba Corp Exposure mask and manufacturing method and device therefor
JPH07209849A (en) * 1994-01-19 1995-08-11 Dainippon Printing Co Ltd Halftone phase shift photomask and blank for halftone phase shift photomask
JPH0876353A (en) * 1994-09-08 1996-03-22 Nec Corp Production of phase shift mask
JPH08325560A (en) * 1995-06-01 1996-12-10 Hoya Corp Antistatic film, and lithographic mask blank and lithographic mask using the film
JPH10198017A (en) * 1997-01-10 1998-07-31 Toppan Printing Co Ltd Phase shift photomask and blank for phase shift photomask
JP2001056545A (en) * 1999-06-11 2001-02-27 Hoya Corp Phase shift mask and phase shift mask blank
JP2001066756A (en) * 1999-06-23 2001-03-16 Toppan Printing Co Ltd Blank for halftone type phase shift mask, halftone type phase shift mask and production method therefor
JP2001174973A (en) * 1999-12-15 2001-06-29 Dainippon Printing Co Ltd Halftone phase shift photomask and blanks for same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0451307B1 (en) * 1990-04-09 1996-10-23 Siemens Aktiengesellschaft Phase mask for photolithographic projection and process for its preparation
KR0130448Y1 (en) * 1994-12-13 1998-12-15 전성원 Device for opening and closing tail door for an automobile
US5935735A (en) * 1996-10-24 1999-08-10 Toppan Printing Co., Ltd. Halftone phase shift mask, blank for the same, and methods of manufacturing these

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0239153A (en) * 1988-07-29 1990-02-08 Toppan Printing Co Ltd Photomask blank and photomask
JPH0683034A (en) * 1992-07-17 1994-03-25 Toshiba Corp Exposure, mask, exposure mask substrate and its production
JPH07104457A (en) * 1993-08-13 1995-04-21 Toshiba Corp Exposure mask and manufacturing method and device therefor
JPH07209849A (en) * 1994-01-19 1995-08-11 Dainippon Printing Co Ltd Halftone phase shift photomask and blank for halftone phase shift photomask
JPH0876353A (en) * 1994-09-08 1996-03-22 Nec Corp Production of phase shift mask
JPH08325560A (en) * 1995-06-01 1996-12-10 Hoya Corp Antistatic film, and lithographic mask blank and lithographic mask using the film
JPH10198017A (en) * 1997-01-10 1998-07-31 Toppan Printing Co Ltd Phase shift photomask and blank for phase shift photomask
JP2001056545A (en) * 1999-06-11 2001-02-27 Hoya Corp Phase shift mask and phase shift mask blank
JP2001066756A (en) * 1999-06-23 2001-03-16 Toppan Printing Co Ltd Blank for halftone type phase shift mask, halftone type phase shift mask and production method therefor
JP2001174973A (en) * 1999-12-15 2001-06-29 Dainippon Printing Co Ltd Halftone phase shift photomask and blanks for same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101165235B1 (en) * 2004-03-31 2012-09-13 도판 인사츠 가부시키가이샤 Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
KR101165239B1 (en) 2004-03-31 2012-09-13 도판 인사츠 가부시키가이샤 Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
US7618753B2 (en) 2004-09-10 2009-11-17 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and method for producing those
JP2007241060A (en) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd Photomask blank and method for manufacturing photomask
JP2010237692A (en) * 2010-05-28 2010-10-21 Shin-Etsu Chemical Co Ltd Photomask blank and method of manufacturing photomask
JP4697495B2 (en) * 2010-05-28 2011-06-08 信越化学工業株式会社 Photomask blank and photomask manufacturing method
JP2012003287A (en) * 2011-09-21 2012-01-05 Shin Etsu Chem Co Ltd Method for manufacturing photo mask, and photo mask
JP2012032823A (en) * 2011-09-21 2012-02-16 Shin Etsu Chem Co Ltd Method of manufacturing photomask blank and binary mask
CN109188854A (en) * 2018-10-18 2019-01-11 合肥鑫晟光电科技有限公司 Mask plate, display base plate and preparation method thereof, display device
CN109188854B (en) * 2018-10-18 2020-06-09 合肥鑫晟光电科技有限公司 Mask plate, display substrate, manufacturing method of display substrate and display device

Also Published As

Publication number Publication date
KR100815679B1 (en) 2008-03-20
KR20040054805A (en) 2004-06-25
CN1596385A (en) 2005-03-16
CN100440038C (en) 2008-12-03

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