CN110308615A - Photomask structure - Google Patents
Photomask structure Download PDFInfo
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- CN110308615A CN110308615A CN201910448140.8A CN201910448140A CN110308615A CN 110308615 A CN110308615 A CN 110308615A CN 201910448140 A CN201910448140 A CN 201910448140A CN 110308615 A CN110308615 A CN 110308615A
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- Prior art keywords
- phase
- frame
- shadow mask
- shift mask
- block
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The present invention provides a kind of photomask structures, comprising: a transparent substrate, including transmission region and at least one lightproof area surrounded by the transmission region；One shadow mask layer is set to the transparent substrate and is covered with the lightproof area；One phase-shift mask layer, it is set on the transparent substrate and connect with the shadow mask layer, the phase-shift mask layer is connected on the edge of the shadow mask layer and is located at the transmission region, and the phase-shift mask layer is used to that scattered light to be made to obtain cancellation at interface with the light scattered by the shadow mask layer.
Description
Technical field
The present invention relates to array substrate production fields, and in particular to a kind of photomask structure.
Background technique
In the process flow of oled panel manufacture, need to make tens of layer film layers on substrate, these film layers it
Between exactitude position being successful with conclusive effect for array substrate.In order to monitor in real time each tunic layer with
The aligning accuracy of its contraposition layer, it will usually which designing interlayer alignment confirmation operation is after exposure, etches to come to carry out reality to it
When monitor.If it find that contraposition deviation has exceeded allowed band, then need to weed out photoresist, then re-starts contraposition photoetching
Journey, until aligning accuracy is within allowed band.Such as after POLY layers complete, GE1, GE2, CNT and SD thereafter
Etc. film layers require and POLY layers of progress aligning accuracy confirmation.Since the angle taper of photoresist is too small, cause with light sensitive device CCD
There are larger random errors when crawl film layer boundary, not can accurately reflect the aligning accuracy between film layer, this has seriously affected batch
For the real time monitoring effect of film layer aligning accuracy when production, make a big impact to production yield raising.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The present invention provides a kind of photomask structure, and product yield can be improved.
The present invention provides a kind of photomask structures, comprising:
One transparent substrate, including transmission region and at least one lightproof area surrounded by the transmission region；
One shadow mask layer is set to the transparent substrate and is covered with the lightproof area；
One phase-shift mask layer is set on the transparent substrate and connect with the shadow mask layer, and the phase shift is covered
Film layer is connected on the edge of the shadow mask layer and is located at the transmission region, and the phase-shift mask layer is for making to be dissipated by it
The light penetrated obtains cancellation with the light scattered by the shadow mask layer at interface.
In photomask structure of the present invention, the quantity of at least one lightproof area is one, the shading region
Domain is rectangular；The phase-shift mask layer rectangular frame-shaped and its be arranged around the outer edge of the lightproof area, the phase shift covers
The inward flange of film layer is overlapped with the outer edge of the shadow mask layer.
In photomask structure of the present invention, the lightproof area is in rectangular ring, and the phase-shift mask layer is in rectangle
Frame-shaped and its be arranged around the outer edge of the lightproof area, the inward flange of the phase-shift mask layer and the shadow mask layer it is outer
Coincident.
In photomask structure of the present invention, the lightproof area is in rectangular ring, and the phase-shift mask layer includes the
One phase-shift mask frame and the second phase-shift mask frame, the first phase-shift mask frame and the second phase-shift mask frame are in rectangle frame
Shape；
The shadow mask layer includes the first shadow mask block, the second shadow mask block and third shadow mask block, institute
State the first shadow mask block, the second shadow mask block and the equal rectangular frame-shaped of third shadow mask block；First phase
It moves mask frame to be arranged along the inward flange of the first shadow mask block, the second shadow mask block is along first phase shift
The inward flange of mask frame is arranged, and the second phase-shift mask frame is arranged along the inward flange of the second shadow mask block, described
Third shadow mask block is arranged along the inward flange of the second phase-shift mask frame；The inward flange of the first shadow mask block with
The outer edge of the first phase-shift mask frame connects, the inward flange of the first phase-shift mask frame and the second shadow mask block
Outer edge connection, the inward flange of the second shadow mask block is connect with the outer edge of the second phase-shift mask frame, described
The inward flange of second phase-shift mask frame is connect with the outer edge of the third shadow mask block.
In photomask structure of the present invention, the lightproof area is in rectangular ring, and the phase-shift mask layer includes the
One phase-shift mask frame and the second phase-shift mask frame, the first phase-shift mask frame and the second phase-shift mask frame are in rectangle frame
Shape；
The shadow mask layer includes the first shadow mask block, the second shadow mask block, the first shadow mask block, the
The two equal rectangular frame-shapeds of shadow mask block；The first phase-shift mask frame is located at the inside of the first shadow mask block, described
Second shadow mask block is located at the inside of the first phase-shift mask frame, and the second phase-shift mask frame is located at second shading
The inside of exposure mask block；
The outer edge of the first phase-shift mask frame is overlapped with the inward flange of the first shadow mask block, and described second hides
The outer edge of the outer edge of photomask block and the first phase-shift mask frame is spaced the first pre-determined distance value, second phase shift
The inward flange of the outer edge of mask frame and the second shadow mask block is spaced the second pre-determined distance value.
In photomask structure of the present invention, the border width of the four edges of the first phase-shift mask frame is 1um,
The outer edge of the second shadow mask block is 1um, second shading at a distance from the first phase-shift mask frame inward flange
The width of the frame of exposure mask block is 0.5um, the outer edge of the second phase-shift mask frame and the second shadow mask block
0.5um is divided between inward flange is equal.
In photomask structure of the present invention, the quantity of at least one lightproof area is at least four, it is described extremely
Few four lightproof areas are arranged respectively along the four edges of default rectangle, and the lightproof area rectangular-blocklike, the phase shift is covered
Film layer is arranged respectively along the shadow mask layer in four lightproof areas towards the edge of the central side.
In photomask structure of the present invention, the quantity of at least one lightproof area is four, four shading regions
Domain is respectively arranged at the medium position of the four edges of rectangle.
In photomask structure of the present invention, the width of the phase-shift mask layer is 0.1 μm -2 μm.
In photomask structure of the present invention, the phase shift knots modification of the phase-shift mask layer is between -180 ° to 180 °
In any value.
The present invention is connected on the edge of the shadow mask layer by the phase-shift mask layer and is located at the transparent area
Domain, the phase-shift mask layer is for making scattered light obtain phase at interface with the light scattered by the shadow mask layer
Disappear, so as to improve product yield.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the layer structure figure of one of some embodiments of the invention photomask structure.
Fig. 2 is the first plane structure chart of one of some embodiments of the invention photomask structure.
Fig. 3 is second of plane structure chart of one of some embodiments of the invention photomask structure.
Fig. 4 is the third plane structure chart of one of some embodiments of the invention photomask structure.
Fig. 5 is the 4th kind of plane structure chart of one of some embodiments of the invention photomask structure.
Fig. 6 is the 5th kind of plane structure chart of one of some embodiments of the invention photomask structure.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, relative importance is not understood to indicate or imply or implicitly indicates the quantity of indicated technical characteristic.
" first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more feature.?
In description of the invention, the meaning of " plurality " is two or more, unless otherwise specifically defined.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected or can mutually communicate；It can be directly connected, it can also be by between intermediary
It connects connected, can be the connection inside two elements or the interaction relationship of two elements.For the ordinary skill of this field
For personnel, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature includes the first spy above the second feature " above ", " above " and " above "
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include that fisrt feature is directly below and diagonally below the second feature, or is merely representative of
First feature horizontal height is less than second feature.
Following disclosure provides many different embodiments or example is used to realize different structure of the invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
It is the structure chart of one of some embodiments of the invention photomask structure please refer to Fig. 1, Fig. 1.The light shield knot
Structure includes: transparent substrate 10, shadow mask layer 20 and phase-shift mask layer 30.Wherein, which includes transmission region
And at least one lightproof area surrounded by the transmission region.One shadow mask layer 20 is set to the transparent substrate 10 simultaneously
It is covered with the lightproof area.Phase-shift mask layer 30 is set on the transparent substrate 10 and connect with the shadow mask layer 20,
The phase-shift mask layer 30 is connected on the edge of the shadow mask layer 20 and is located at the transmission region, and the phase shift is covered
Film layer 30 is used to make scattered light and obtains cancellation at interface by the light that the shadow mask layer 20 scatters.Phase shift
The width of mask layer is 0.1 μm -2 μm.The phase shift knots modification of phase-shift mask layer be -180 ° to 180 ° between in any value.Phase
The phase shift knots modification for moving mask layer is 180 °, 120 °, 90 °, -120 ° or -90 °.
Specifically, in some embodiments, referring to Fig. 2, the quantity of at least one lightproof area 11 is one,
The lightproof area 11 is rectangular；30 rectangular frame-shaped of phase-shift mask layer and its around the lightproof area 11 outer edge
Setting, the inward flange of the phase-shift mask layer 30 are overlapped with the outer edge of the shadow mask layer 20.The phase-shift mask layer 30
Border width is 1 μm.The phase shift knots modification of phase-shift mask layer 30 is 180 °, can make phase-shift mask layer 30 and shadow mask layer
Light intensity at 20 interfaces reaches cancellation.This kind of photomask structure is the Poly layer being used to form in array substrate.
Light intensity is reduced to 0 distance for having approximately passed through 1.5 μm from 1.That reflects the designs for having passed through phase-shift mask layer 30
The length for significantly shortening penumbra region, it is highly beneficial to photosensitive element crawl boundary.
Specifically, in some embodiments, referring to Fig. 3, lightproof area 11 is in rectangular ring, the phase-shift mask
Layer 30 rectangular frame-shaped and its around the lightproof area 11 inward flange be arranged, the outer edge of the phase-shift mask layer 30 with it is described
The outer edge of shadow mask layer 20 is overlapped.Photomask structure in the embodiment is used to form GE2 (second grid metal layer).The phase
The border width for moving mask layer 30 is 1 μm.The phase shift knots modification of phase-shift mask layer 30 be 180 °, can make phase-shift mask layer 30 with
Light intensity at 20 interface of shadow mask layer reaches cancellation.Penumbra region is significantly shortened by the design of phase-shift mask layer 30
Length, to CCD crawl boundary it is highly beneficial.
Specifically, in some embodiments, referring to Fig. 4, phase-shift mask layer 30 includes the first phase-shift mask frame 31
And the second phase-shift mask frame 32, the first phase-shift mask frame 31 and the equal rectangular frame-shaped of the second phase-shift mask frame 32；Institute
It states shadow mask layer 20 and includes the first shadow mask block 21, the second shadow mask block 22 and third shadow mask block 23, it is described
First shadow mask block 21, the second shadow mask block 22 and the equal rectangular frame-shaped of the third shadow mask block 23；Described
One phase-shift mask frame 31 along the first shadow mask block 21 inward flange be arranged, the second shadow mask block 22 along
The inward flange of the first phase-shift mask frame 31 is arranged, and the second phase-shift mask frame 32 is along the second shadow mask block 22
Inward flange setting, the third shadow mask block 23 along the second phase-shift mask frame 32 inward flange be arranged；Described
The inward flange of one shadow mask block is connect with the outer edge of the first phase-shift mask frame, the inner edge of the first phase-shift mask frame
Edge is connect with the outer edge of the second shadow mask block, and the inward flange of the second shadow mask block is covered with second phase shift
The outer edge of film frame connects, and the inward flange of the second phase-shift mask frame is connect with the outer edge of the third shadow mask block.
Photomask structure in the figure is mainly used in the Source and drain metal level of production array substrate, the first phase-shift mask frame 31 and the second phase shift
The border width of mask frame 32 is 1 μm.The border width of second shadow mask block 22 and third shadow mask block 23 difference
It is 0.5 μm.
Specifically, in some embodiments, referring to Fig. 5, lightproof area 11 is in rectangular ring, the phase-shift mask
Layer 30 includes the first phase-shift mask frame 31 and the second phase-shift mask frame 32, the first phase-shift mask frame 31 and the second phase shift
The equal rectangular frame-shaped of mask frame 32；The shadow mask layer 20 includes the first shadow mask block 21, the second shadow mask block 22,
The first shadow mask block 21, the equal rectangular frame-shaped of the second shadow mask block 22；The first phase-shift mask frame 31 is located at institute
The inside of the first shadow mask block 21 is stated, the second phase-shift mask frame 32 is located at the inside of the first phase-shift mask frame 31,
The second shadow mask block 22 is located at the inside of the second phase-shift mask frame 32.The outer edge of the first phase-shift mask frame
It is overlapped with the inward flange of the first shadow mask block, the outer edge of the second phase-shift mask frame 32 and the first phase-shift mask frame
Interval between 31 inward flange is the first pre-determined distance value, and the inward flange of the second phase-shift mask frame and described second hide
The outer edge of photomask block is spaced the second pre-determined distance value.First pre-determined distance value and the second pre-determined distance value are respectively 1um
And 0.5um.Structure in the figure is used to form the M2 metal layer of array substrate.In some embodiments, the first phase-shift mask frame
The border widths of four edges be 1um, the outer edge of the second shadow mask block and the first phase-shift mask frame inner edge
The distance of edge is 1um, and the width of the frame of the second shadow mask block is 0.5um, outside the second phase-shift mask frame
0.5um is divided between the inward flange of edge and the second shadow mask block is equal.
Referring to Fig. 6, the quantity of at least one lightproof area 11 is at least four, at least four lightproof area
11 are arranged respectively along the four edges of default rectangle, the lightproof area rectangular-blocklike, the phase-shift mask layer 30 edge respectively
Four lightproof areas shadow mask layer 20 towards the central side edge be arranged.The quantity of at least one lightproof area 11
It is four, four lightproof areas 11 are respectively arranged at the medium position of the four edges of rectangle.Phase-shift mask layer 30 and shadow mask
The coincident towards inside of layer 20.Photomask structure in the embodiment is photomask structure used in GE1 layers.
The present invention is connected on the edge of the shadow mask layer by the phase-shift mask layer and is located at the transparent area
Domain, the phase-shift mask layer is for making scattered light obtain phase at interface with the light scattered by the shadow mask layer
Disappear, so as to improve product yield.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of photomask structure characterized by comprising
One transparent substrate, including transmission region and at least one lightproof area surrounded by the transmission region；
One shadow mask layer is set to the transparent substrate and is covered with the lightproof area；
One phase-shift mask layer is set on the transparent substrate and connect with the shadow mask layer, the phase-shift mask layer
It is connected on the edge of the shadow mask layer and is located at the transmission region, the phase-shift mask layer is scattered for making
Light obtains cancellation with the light scattered by the shadow mask layer at interface.
2. photomask structure according to claim 1, which is characterized in that the quantity of at least one lightproof area is one
A, the lightproof area is rectangular；The phase-shift mask layer rectangular frame-shaped and its set around the outer edge of the lightproof area
It sets, the inward flange of the phase-shift mask layer is overlapped with the outer edge of the shadow mask layer.
3. photomask structure according to claim 1, which is characterized in that the lightproof area is in rectangular ring, the phase shift
Mask layer rectangular frame-shaped and its outer edge setting around the lightproof area, inward flange and the screening of the phase-shift mask layer
The outer edge of photomask layer is overlapped.
4. photomask structure according to claim 1, which is characterized in that the lightproof area is in rectangular ring, the phase shift
Mask layer includes the first phase-shift mask frame and the second phase-shift mask frame, the first phase-shift mask frame and the second phase-shift mask
The equal rectangular frame-shaped of frame；
The shadow mask layer includes the first shadow mask block, the second shadow mask block and third shadow mask block, and described the
One shadow mask block, the second shadow mask block and the equal rectangular frame-shaped of third shadow mask block；First phase shift is covered
Film frame is arranged along the inward flange of the first shadow mask block, and the second shadow mask block is along first phase-shift mask
The inward flange of frame is arranged, and the second phase-shift mask frame is arranged along the inward flange of the second shadow mask block, the third
Shadow mask block is arranged along the inward flange of the second phase-shift mask frame；The inward flange of the first shadow mask block with it is described
The outer edge of first phase-shift mask frame connects, and the inward flange of the first phase-shift mask frame is outer with the second shadow mask block
Edge connection, the inward flange of the second shadow mask block are connect with the outer edge of the second phase-shift mask frame, and described second
The inward flange of phase-shift mask frame is connect with the outer edge of the third shadow mask block.
5. photomask structure according to claim 1, which is characterized in that the lightproof area is in rectangular ring, the phase shift
Mask layer includes the first phase-shift mask frame and the second phase-shift mask frame, the first phase-shift mask frame and the second phase-shift mask
The equal rectangular frame-shaped of frame；
The shadow mask layer includes the first shadow mask block, the second shadow mask block, and the first shadow mask block, second hide
The equal rectangular frame-shaped of photomask block；The first phase-shift mask frame is located at the inside of the first shadow mask block, and described second
Shadow mask block is located at the inside of the first phase-shift mask frame, and the second phase-shift mask frame is located at second shadow mask
The inside of block；
The outer edge of the first phase-shift mask frame is overlapped with the inward flange of the first shadow mask block, and second shading is covered
The outer edge of the outer edge of film block and the first phase-shift mask frame is spaced the first pre-determined distance value, second phase-shift mask
The inward flange of the outer edge of frame and the second shadow mask block is spaced the second pre-determined distance value.
6. photomask structure according to claim 5, which is characterized in that the frame of the four edges of the first phase-shift mask frame
Width is 1um, and the outer edge of the second shadow mask block is 1um at a distance from the first phase-shift mask frame inward flange,
The width of the frame of the second shadow mask block is 0.5um, the outer edge of the second phase-shift mask frame and described second
0.5um is divided between the inward flange of shadow mask block is equal.
7. photomask structure according to claim 1, which is characterized in that the quantity of at least one lightproof area is at least
Four, at least four lightproof area is arranged respectively along the four edges of default rectangle, the lightproof area rectangular-blocklike,
The phase-shift mask layer is arranged respectively along the shadow mask layer in four lightproof areas towards the edge of the central side.
8. photomask structure according to claim 7, which is characterized in that the quantity of at least one lightproof area is four
A, four lightproof areas are respectively arranged at the medium position of the four edges of rectangle.
9. photomask structure according to claim 1, which is characterized in that the width of the phase-shift mask layer is 0.1 μm -2 μm.
10. photomask structure according to claim 1, which is characterized in that the phase shift knots modification of the phase-shift mask layer be-
Any value between 180 ° to 180 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910448140.8A CN110308615A (en) | 2019-05-27 | 2019-05-27 | Photomask structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910448140.8A CN110308615A (en) | 2019-05-27 | 2019-05-27 | Photomask structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110308615A true CN110308615A (en) | 2019-10-08 |
Family
ID=68074993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910448140.8A Pending CN110308615A (en) | 2019-05-27 | 2019-05-27 | Photomask structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110308615A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115542655A (en) * | 2022-09-21 | 2022-12-30 | 京东方科技集团股份有限公司 | Phase shift mask, preparation method and film layer opening method |
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|---|---|---|---|---|
| CN1373861A (en) * | 1999-11-08 | 2002-10-09 | 松下电器产业株式会社 | Photomask, method of producing photomask, and method of making pattern using photomask |
| CN1596385A (en) * | 2001-11-27 | 2005-03-16 | Hoya株式会社 | Half-tone type phase shift mask blank, half-tone type phase shift mask and process for producing same |
| KR20080098789A (en) * | 2007-05-07 | 2008-11-12 | 동부일렉트로닉스 주식회사 | Half tone phase shifting mask and method for manufacturing the same |
| CN108363270A (en) * | 2018-02-11 | 2018-08-03 | 京东方科技集团股份有限公司 | A kind of phase shifting mask plate, array substrate, preparation method and display device |
| CN108445707A (en) * | 2018-05-15 | 2018-08-24 | 睿力集成电路有限公司 | The production method of phase shifting mask plate, phase shifted mask lithography equipment and phase shifting mask plate |
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2019
- 2019-05-27 CN CN201910448140.8A patent/CN110308615A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373861A (en) * | 1999-11-08 | 2002-10-09 | 松下电器产业株式会社 | Photomask, method of producing photomask, and method of making pattern using photomask |
| CN1596385A (en) * | 2001-11-27 | 2005-03-16 | Hoya株式会社 | Half-tone type phase shift mask blank, half-tone type phase shift mask and process for producing same |
| KR20080098789A (en) * | 2007-05-07 | 2008-11-12 | 동부일렉트로닉스 주식회사 | Half tone phase shifting mask and method for manufacturing the same |
| CN108363270A (en) * | 2018-02-11 | 2018-08-03 | 京东方科技集团股份有限公司 | A kind of phase shifting mask plate, array substrate, preparation method and display device |
| CN108445707A (en) * | 2018-05-15 | 2018-08-24 | 睿力集成电路有限公司 | The production method of phase shifting mask plate, phase shifted mask lithography equipment and phase shifting mask plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115542655A (en) * | 2022-09-21 | 2022-12-30 | 京东方科技集团股份有限公司 | Phase shift mask, preparation method and film layer opening method |
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Application publication date: 20191008 |