KR101560452B1 - 전자 디바이스의 제조 방법, 표시 장치의 제조 방법, 포토마스크의 제조 방법 및 포토마스크 - Google Patents

전자 디바이스의 제조 방법, 표시 장치의 제조 방법, 포토마스크의 제조 방법 및 포토마스크 Download PDF

Info

Publication number
KR101560452B1
KR101560452B1 KR1020130118827A KR20130118827A KR101560452B1 KR 101560452 B1 KR101560452 B1 KR 101560452B1 KR 1020130118827 A KR1020130118827 A KR 1020130118827A KR 20130118827 A KR20130118827 A KR 20130118827A KR 101560452 B1 KR101560452 B1 KR 101560452B1
Authority
KR
South Korea
Prior art keywords
pattern
thin film
photomask
film
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020130118827A
Other languages
English (en)
Korean (ko)
Other versions
KR20140047534A (ko
Inventor
노보루 야마구찌
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20140047534A publication Critical patent/KR20140047534A/ko
Application granted granted Critical
Publication of KR101560452B1 publication Critical patent/KR101560452B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020130118827A 2012-10-12 2013-10-04 전자 디바이스의 제조 방법, 표시 장치의 제조 방법, 포토마스크의 제조 방법 및 포토마스크 Active KR101560452B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012227309A JP6157832B2 (ja) 2012-10-12 2012-10-12 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
JPJP-P-2012-227309 2012-10-12

Publications (2)

Publication Number Publication Date
KR20140047534A KR20140047534A (ko) 2014-04-22
KR101560452B1 true KR101560452B1 (ko) 2015-10-14

Family

ID=50452966

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130118827A Active KR101560452B1 (ko) 2012-10-12 2013-10-04 전자 디바이스의 제조 방법, 표시 장치의 제조 방법, 포토마스크의 제조 방법 및 포토마스크

Country Status (4)

Country Link
JP (1) JP6157832B2 (enrdf_load_stackoverflow)
KR (1) KR101560452B1 (enrdf_load_stackoverflow)
CN (3) CN105892226B (enrdf_load_stackoverflow)
TW (1) TWI512391B (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
JP6718225B2 (ja) * 2015-12-02 2020-07-08 株式会社エスケーエレクトロニクス フォトマスクおよびその製造方法
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
TW201823855A (zh) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
KR101918380B1 (ko) 2017-01-06 2018-11-13 가부시키가이샤 에스케이 일렉트로닉스 얼라이먼트 패턴을 갖는 포토 마스크 블랭크 및 이를 이용한 포토 마스크 및 그 제조 방법
JP6744955B2 (ja) * 2019-06-19 2020-08-19 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP7261709B2 (ja) * 2019-09-13 2023-04-20 Hoya株式会社 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法
CN112526818B (zh) * 2020-12-02 2024-12-20 北海惠科光电技术有限公司 半色调掩膜版和薄膜晶体管阵列基板制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006084507A (ja) 2004-09-14 2006-03-30 Matsushita Electric Ind Co Ltd 位相シフトマスク及び位相シフトマスクの製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001083688A (ja) * 1999-07-13 2001-03-30 Matsushita Electronics Industry Corp フォトマスク、レジストパターンの形成方法、アライメント精度計測方法及び半導体装置の製造方法
JP3586647B2 (ja) * 2000-12-26 2004-11-10 Ｈｏｙａ株式会社 グレートーンマスク及びその製造方法
WO2003046659A1 (en) * 2001-11-27 2003-06-05 Hoya Corporation Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof
US7160649B2 (en) * 2002-07-11 2007-01-09 Hitachi Via Mechanics, Ltd. Gray level imaging masks, optical imaging apparatus for gray level imaging masks and methods for encoding mask and use of the masks
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP4443873B2 (ja) * 2003-08-15 2010-03-31 Ｈｏｙａ株式会社 位相シフトマスクの製造方法
US7862960B2 (en) * 2004-06-22 2011-01-04 Hoya Corporation Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks
JP2007123356A (ja) * 2005-10-25 2007-05-17 Sharp Corp 半導体装置の製造方法
KR101255616B1 (ko) * 2006-07-28 2013-04-16 삼성디스플레이 주식회사 다중톤 광마스크, 이의 제조방법 및 이를 이용한박막트랜지스터 기판의 제조방법
JP4864776B2 (ja) * 2007-03-14 2012-02-01 株式会社東芝 フォトマスク
JP2009229893A (ja) * 2008-03-24 2009-10-08 Hoya Corp 多階調フォトマスクの製造方法及びパターン転写方法
JP2009258693A (ja) * 2008-03-27 2009-11-05 Hoya Corp 多階調フォトマスク及びそれを用いたパターン転写方法
JP5215019B2 (ja) * 2008-03-28 2013-06-19 Ｈｏｙａ株式会社 多階調フォトマスク及びその製造方法、並びにパターン転写方法
JP4878379B2 (ja) * 2009-02-09 2012-02-15 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
JP2010276724A (ja) * 2009-05-26 2010-12-09 Hoya Corp 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法
JP2011027878A (ja) * 2009-07-23 2011-02-10 Hoya Corp 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法
JP2011081326A (ja) * 2009-10-10 2011-04-21 Hoya Corp 多階調フォトマスクの製造方法及び多階調フォトマスク用ブランク、並びに電子デバイスの製造方法
TWI502623B (zh) * 2010-01-07 2015-10-01 Hoya Corp 光罩之製造方法、光罩、及顯示裝置之製造方法
JP2012008545A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP2012008546A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006084507A (ja) 2004-09-14 2006-03-30 Matsushita Electric Ind Co Ltd 位相シフトマスク及び位相シフトマスクの製造方法

Also Published As

Publication number Publication date
CN103728832B (zh) 2017-07-14
TW201415160A (zh) 2014-04-16
CN105892226B (zh) 2019-08-02
CN110147029B (zh) 2022-06-07
CN105892226A (zh) 2016-08-24
JP2014081409A (ja) 2014-05-08
TWI512391B (zh) 2015-12-11
KR20140047534A (ko) 2014-04-22
JP6157832B2 (ja) 2017-07-05
CN103728832A (zh) 2014-04-16
CN110147029A (zh) 2019-08-20

Similar Documents

Publication Publication Date Title
KR101560452B1 (ko) 전자 디바이스의 제조 방법, 표시 장치의 제조 방법, 포토마스크의 제조 방법 및 포토마스크
KR101443531B1 (ko) 포토 마스크의 제조 방법, 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법
US7674563B2 (en) Pattern forming method and phase shift mask manufacturing method
KR101544324B1 (ko) 표시 장치 제조용 포토마스크 및 패턴 전사 방법
JP4896671B2 (ja) ハーフトーンマスク及びこれを用いたパターン基板の製造方法
JP2014081409A5 (enrdf_load_stackoverflow)
JP2014002255A5 (enrdf_load_stackoverflow)
KR101837247B1 (ko) 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법
KR20100029270A (ko) 위상 시프트 마스크의 제조방법
KR20170117988A (ko) 포토마스크 및 표시 장치의 제조 방법
JP6514143B2 (ja) フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
CN105911812B (zh) 光掩模组及其制造方法、光掩模及显示装置的制造方法
KR20170010032A (ko) 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 표시 장치의 제조 방법
KR101771341B1 (ko) 포토마스크의 제조 방법, 포토마스크, 및 표시 장치의 제조 방법
KR101751605B1 (ko) 포토마스크의 제조 방법, 포토마스크 및 표시 장치의 제조 방법
TWI777402B (zh) 顯示裝置製造用光罩、及顯示裝置之製造方法
KR101703395B1 (ko) 포토마스크의 제조 방법, 패턴 전사 방법 및 표시 장치의 제조 방법
JP6302502B2 (ja) 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
CN116577961A (zh) Fpd用光掩模、fpd用光掩模的位置测量用标记的形成方法以及fpd用光掩模的制造方法
JP2017072842A (ja) フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6744955B2 (ja) フォトマスクの製造方法、フォトマスク及び表示装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20131004

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20141215

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20150918

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20151007

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20151007

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20180920

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20180920

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20200928

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20210917

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20220919

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20230919

Start annual number: 9

End annual number: 9