JP2014074908A5 - - Google Patents

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Publication number
JP2014074908A5
JP2014074908A5 JP2013189247A JP2013189247A JP2014074908A5 JP 2014074908 A5 JP2014074908 A5 JP 2014074908A5 JP 2013189247 A JP2013189247 A JP 2013189247A JP 2013189247 A JP2013189247 A JP 2013189247A JP 2014074908 A5 JP2014074908 A5 JP 2014074908A5
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JP
Japan
Prior art keywords
transistor
electrode
storage capacitor
light
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013189247A
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English (en)
Japanese (ja)
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JP2014074908A (ja
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Publication date
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Priority to JP2013189247A priority Critical patent/JP2014074908A/ja
Priority claimed from JP2013189247A external-priority patent/JP2014074908A/ja
Publication of JP2014074908A publication Critical patent/JP2014074908A/ja
Publication of JP2014074908A5 publication Critical patent/JP2014074908A5/ja
Withdrawn legal-status Critical Current

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JP2013189247A 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法 Withdrawn JP2014074908A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013189247A JP2014074908A (ja) 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012202135 2012-09-13
JP2012202135 2012-09-13
JP2013189247A JP2014074908A (ja) 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018241952A Division JP2019053329A (ja) 2012-09-13 2018-12-26 半導体装置

Publications (2)

Publication Number Publication Date
JP2014074908A JP2014074908A (ja) 2014-04-24
JP2014074908A5 true JP2014074908A5 (https=) 2016-10-27

Family

ID=50749055

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2013189247A Withdrawn JP2014074908A (ja) 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法
JP2018241952A Withdrawn JP2019053329A (ja) 2012-09-13 2018-12-26 半導体装置
JP2020141755A Withdrawn JP2021028719A (ja) 2012-09-13 2020-08-25 半導体装置の駆動方法
JP2022000945A Active JP7490686B2 (ja) 2012-09-13 2022-01-06 表示装置
JP2024079612A Active JP7664457B2 (ja) 2012-09-13 2024-05-15 表示装置
JP2025063295A Active JP7833587B2 (ja) 2012-09-13 2025-04-07 液晶表示装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2018241952A Withdrawn JP2019053329A (ja) 2012-09-13 2018-12-26 半導体装置
JP2020141755A Withdrawn JP2021028719A (ja) 2012-09-13 2020-08-25 半導体装置の駆動方法
JP2022000945A Active JP7490686B2 (ja) 2012-09-13 2022-01-06 表示装置
JP2024079612A Active JP7664457B2 (ja) 2012-09-13 2024-05-15 表示装置
JP2025063295A Active JP7833587B2 (ja) 2012-09-13 2025-04-07 液晶表示装置

Country Status (1)

Country Link
JP (6) JP2014074908A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102333604B1 (ko) * 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
CN111383543B (zh) * 2018-12-29 2022-04-12 武汉华星光电半导体显示技术有限公司 一种oled显示面板及智能终端
JP7325080B2 (ja) * 2019-02-18 2023-08-14 Ｎｅｘｔ Ｉｎｎｏｖａｔｉｏｎ合同会社 接合手段及び部材の接合方法
WO2020245692A1 (ja) * 2019-06-07 2020-12-10 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2737757B2 (ja) * 1997-02-27 1998-04-08 セイコーエプソン株式会社 液晶装置
JP3683463B2 (ja) * 1999-03-11 2005-08-17 シャープ株式会社 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ
GB2372620A (en) * 2001-02-27 2002-08-28 Sharp Kk Active Matrix Device
JP4604440B2 (ja) * 2002-02-22 2011-01-05 日本電気株式会社 チャネルエッチ型薄膜トランジスタ
JP4179800B2 (ja) * 2002-05-24 2008-11-12 ソニー株式会社 表示装置及びその製造方法
GB0318611D0 (en) * 2003-08-08 2003-09-10 Koninkl Philips Electronics Nv Circuit for signal amplification and use of the same in active matrix devices
JP4483235B2 (ja) * 2003-09-01 2010-06-16 カシオ計算機株式会社 トランジスタアレイ基板の製造方法及びトランジスタアレイ基板
JP2007121530A (ja) * 2005-10-26 2007-05-17 Epson Imaging Devices Corp 液晶装置
JP5148912B2 (ja) 2006-04-06 2013-02-20 株式会社半導体エネルギー研究所 液晶表示装置及び半導体装置、並びに電子機器
KR101375831B1 (ko) * 2007-12-03 2014-04-02 삼성전자주식회사 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치
US9041202B2 (en) * 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011033911A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011043163A1 (en) * 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011085800A (ja) * 2009-10-16 2011-04-28 Hitachi Displays Ltd 液晶表示装置
KR102142450B1 (ko) * 2009-10-30 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
US9230994B2 (en) * 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI432865B (zh) 2010-12-01 2014-04-01 友達光電股份有限公司 畫素結構及其製作方法
JP5859839B2 (ja) * 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
TWI570920B (zh) * 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法

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