JP2014074908A - 半導体装置及び半導体装置の駆動方法 - Google Patents

半導体装置及び半導体装置の駆動方法 Download PDF

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Publication number
JP2014074908A
JP2014074908A JP2013189247A JP2013189247A JP2014074908A JP 2014074908 A JP2014074908 A JP 2014074908A JP 2013189247 A JP2013189247 A JP 2013189247A JP 2013189247 A JP2013189247 A JP 2013189247A JP 2014074908 A JP2014074908 A JP 2014074908A
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film
transistor
oxide semiconductor
electrode
semiconductor film
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JP2013189247A
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Japanese (ja)
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JP2014074908A5 (https=
Inventor
Shunpei Yamazaki
舜平 山崎
Hiroyuki Miyake
博之 三宅
Hideaki Shishido
英明 宍戸
Jun Koyama
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013189247A priority Critical patent/JP2014074908A/ja
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Publication of JP2014074908A5 publication Critical patent/JP2014074908A5/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
JP2013189247A 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法 Withdrawn JP2014074908A (ja)

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JP2013189247A JP2014074908A (ja) 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法

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JP2012202135 2012-09-13
JP2012202135 2012-09-13
JP2013189247A JP2014074908A (ja) 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法

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JP2018241952A Division JP2019053329A (ja) 2012-09-13 2018-12-26 半導体装置

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JP2014074908A true JP2014074908A (ja) 2014-04-24
JP2014074908A5 JP2014074908A5 (https=) 2016-10-27

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JP2013189247A Withdrawn JP2014074908A (ja) 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法
JP2018241952A Withdrawn JP2019053329A (ja) 2012-09-13 2018-12-26 半導体装置
JP2020141755A Withdrawn JP2021028719A (ja) 2012-09-13 2020-08-25 半導体装置の駆動方法
JP2022000945A Active JP7490686B2 (ja) 2012-09-13 2022-01-06 表示装置
JP2024079612A Active JP7664457B2 (ja) 2012-09-13 2024-05-15 表示装置
JP2025063295A Active JP7833587B2 (ja) 2012-09-13 2025-04-07 液晶表示装置

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JP2018241952A Withdrawn JP2019053329A (ja) 2012-09-13 2018-12-26 半導体装置
JP2020141755A Withdrawn JP2021028719A (ja) 2012-09-13 2020-08-25 半導体装置の駆動方法
JP2022000945A Active JP7490686B2 (ja) 2012-09-13 2022-01-06 表示装置
JP2024079612A Active JP7664457B2 (ja) 2012-09-13 2024-05-15 表示装置
JP2025063295A Active JP7833587B2 (ja) 2012-09-13 2025-04-07 液晶表示装置

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019195101A (ja) * 2014-05-15 2019-11-07 株式会社半導体エネルギー研究所 半導体装置
CN114694524A (zh) * 2018-12-29 2022-07-01 武汉华星光电半导体显示技术有限公司 一种oled显示面板及智能终端
JP2025019138A (ja) * 2019-06-07 2025-02-06 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7325080B2 (ja) * 2019-02-18 2023-08-14 Ｎｅｘｔ Ｉｎｎｏｖａｔｉｏｎ合同会社 接合手段及び部材の接合方法

Citations (10)

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JPH09197444A (ja) * 1997-02-27 1997-07-31 Seiko Epson Corp 液晶装置
US20020154253A1 (en) * 2001-02-27 2002-10-24 Cairns Graham Andrew Active matrix device and display
JP2003344866A (ja) * 2002-05-24 2003-12-03 Sony Corp 表示装置及びその製造方法
US20060232577A1 (en) * 2003-08-08 2006-10-19 Edwards Martin J Circuit for signal amplification and use of the same in active matrix devices
JP2009302520A (ja) * 2008-05-16 2009-12-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2011100980A (ja) * 2009-10-05 2011-05-19 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2011119706A (ja) * 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2012083738A (ja) * 2010-09-15 2012-04-26 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP2012160708A (ja) * 2011-01-14 2012-08-23 Semiconductor Energy Lab Co Ltd 記憶素子、記憶装置、信号処理回路、記憶素子の駆動方法
JP2012169606A (ja) * 2011-01-26 2012-09-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

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JP3683463B2 (ja) * 1999-03-11 2005-08-17 シャープ株式会社 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ
JP4604440B2 (ja) * 2002-02-22 2011-01-05 日本電気株式会社 チャネルエッチ型薄膜トランジスタ
JP4483235B2 (ja) * 2003-09-01 2010-06-16 カシオ計算機株式会社 トランジスタアレイ基板の製造方法及びトランジスタアレイ基板
JP2007121530A (ja) * 2005-10-26 2007-05-17 Epson Imaging Devices Corp 液晶装置
JP5148912B2 (ja) 2006-04-06 2013-02-20 株式会社半導体エネルギー研究所 液晶表示装置及び半導体装置、並びに電子機器
KR101375831B1 (ko) * 2007-12-03 2014-04-02 삼성전자주식회사 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011033911A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011085800A (ja) * 2009-10-16 2011-04-28 Hitachi Displays Ltd 液晶表示装置
TWI432865B (zh) 2010-12-01 2014-04-01 友達光電股份有限公司 畫素結構及其製作方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09197444A (ja) * 1997-02-27 1997-07-31 Seiko Epson Corp 液晶装置
US20020154253A1 (en) * 2001-02-27 2002-10-24 Cairns Graham Andrew Active matrix device and display
JP2003344866A (ja) * 2002-05-24 2003-12-03 Sony Corp 表示装置及びその製造方法
US20060232577A1 (en) * 2003-08-08 2006-10-19 Edwards Martin J Circuit for signal amplification and use of the same in active matrix devices
JP2009302520A (ja) * 2008-05-16 2009-12-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2011100980A (ja) * 2009-10-05 2011-05-19 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2011119706A (ja) * 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2012083738A (ja) * 2010-09-15 2012-04-26 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP2012160708A (ja) * 2011-01-14 2012-08-23 Semiconductor Energy Lab Co Ltd 記憶素子、記憶装置、信号処理回路、記憶素子の駆動方法
JP2012169606A (ja) * 2011-01-26 2012-09-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019195101A (ja) * 2014-05-15 2019-11-07 株式会社半導体エネルギー研究所 半導体装置
US10998448B2 (en) 2014-05-15 2021-05-04 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device including back gate comprising oxide semiconductor material
US11594642B2 (en) 2014-05-15 2023-02-28 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device including back gate comprising oxide semiconductor material
CN114694524A (zh) * 2018-12-29 2022-07-01 武汉华星光电半导体显示技术有限公司 一种oled显示面板及智能终端
CN114694524B (zh) * 2018-12-29 2023-08-25 武汉华星光电半导体显示技术有限公司 一种oled显示面板及智能终端
JP2025019138A (ja) * 2019-06-07 2025-02-06 株式会社半導体エネルギー研究所 半導体装置

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JP2021028719A (ja) 2021-02-25
JP2024100842A (ja) 2024-07-26
JP2025100632A (ja) 2025-07-03
JP7490686B2 (ja) 2024-05-27
JP7833587B2 (ja) 2026-03-19
JP2019053329A (ja) 2019-04-04
JP2022058513A (ja) 2022-04-12

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