JP2014062023A - 窒化物結晶の製造方法 - Google Patents
窒化物結晶の製造方法 Download PDFInfo
- Publication number
- JP2014062023A JP2014062023A JP2012236354A JP2012236354A JP2014062023A JP 2014062023 A JP2014062023 A JP 2014062023A JP 2012236354 A JP2012236354 A JP 2012236354A JP 2012236354 A JP2012236354 A JP 2012236354A JP 2014062023 A JP2014062023 A JP 2014062023A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- nitride crystal
- crystal
- nitride
- reaction vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 837
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 470
- 238000004519 manufacturing process Methods 0.000 title claims description 123
- 239000002994 raw material Substances 0.000 claims abstract description 537
- 238000006243 chemical reaction Methods 0.000 claims abstract description 213
- 238000011049 filling Methods 0.000 claims abstract description 146
- 239000002904 solvent Substances 0.000 claims abstract description 107
- 239000002245 particle Substances 0.000 claims description 121
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 113
- 229910052760 oxygen Inorganic materials 0.000 claims description 113
- 239000001301 oxygen Substances 0.000 claims description 113
- 238000004090 dissolution Methods 0.000 claims description 27
- 239000011163 secondary particle Substances 0.000 claims description 17
- 238000002425 crystallisation Methods 0.000 claims 2
- 230000008025 crystallization Effects 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 118
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 169
- 229910002601 GaN Inorganic materials 0.000 description 167
- 239000000463 material Substances 0.000 description 72
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 63
- 125000004429 atom Chemical group 0.000 description 62
- 239000002775 capsule Substances 0.000 description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 57
- 239000002019 doping agent Substances 0.000 description 53
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 50
- -1 InN Chemical compound 0.000 description 41
- 229910045601 alloy Inorganic materials 0.000 description 40
- 239000000956 alloy Substances 0.000 description 40
- 229910021529 ammonia Inorganic materials 0.000 description 39
- 229910052757 nitrogen Inorganic materials 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 230000007797 corrosion Effects 0.000 description 21
- 238000005260 corrosion Methods 0.000 description 21
- 238000009434 installation Methods 0.000 description 20
- 230000004913 activation Effects 0.000 description 19
- 238000005259 measurement Methods 0.000 description 18
- 239000012298 atmosphere Substances 0.000 description 17
- 229910052736 halogen Inorganic materials 0.000 description 17
- 150000002367 halogens Chemical class 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 229910052697 platinum Inorganic materials 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 14
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 14
- 238000000137 annealing Methods 0.000 description 13
- 229910052731 fluorine Inorganic materials 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 230000002829 reductive effect Effects 0.000 description 12
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 11
- 239000011737 fluorine Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 229910052801 chlorine Inorganic materials 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 229910000510 noble metal Inorganic materials 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 229910002835 Pt–Ir Inorganic materials 0.000 description 8
- 239000000470 constituent Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910021482 group 13 metal Inorganic materials 0.000 description 8
- 229910052740 iodine Inorganic materials 0.000 description 8
- 229940062097 nitrogen 90 % Drugs 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
- 239000000654 additive Substances 0.000 description 7
- 229910052794 bromium Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 229910052741 iridium Inorganic materials 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 6
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000011630 iodine Substances 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 6
- 230000035484 reaction time Effects 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000002591 computed tomography Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011164 primary particle Substances 0.000 description 5
- 238000010298 pulverizing process Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910001347 Stellite Inorganic materials 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- AHICWQREWHDHHF-UHFFFAOYSA-N chromium;cobalt;iron;manganese;methane;molybdenum;nickel;silicon;tungsten Chemical compound C.[Si].[Cr].[Mn].[Fe].[Co].[Ni].[Mo].[W] AHICWQREWHDHHF-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910001026 inconel Inorganic materials 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910001235 nimonic Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 229910001088 rené 41 Inorganic materials 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 229910001119 inconels 625 Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910001507 metal halide Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 2
- 230000033558 biomineral tissue development Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- OSQPUMRCKZAIOZ-UHFFFAOYSA-N carbon dioxide;ethanol Chemical compound CCO.O=C=O OSQPUMRCKZAIOZ-UHFFFAOYSA-N 0.000 description 2
- OEERIBPGRSLGEK-UHFFFAOYSA-N carbon dioxide;methanol Chemical compound OC.O=C=O OEERIBPGRSLGEK-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 229910000856 hastalloy Inorganic materials 0.000 description 2
- 229910000039 hydrogen halide Inorganic materials 0.000 description 2
- 239000012433 hydrogen halide Substances 0.000 description 2
- 229910000816 inconels 718 Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 238000009849 vacuum degassing Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910001247 waspaloy Inorganic materials 0.000 description 2
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 1
- ZFFBIQMNKOJDJE-UHFFFAOYSA-N 2-bromo-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(Br)C(=O)C1=CC=CC=C1 ZFFBIQMNKOJDJE-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910005269 GaF 3 Inorganic materials 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- RNIPBGMVTAUWNH-UHFFFAOYSA-N [F].[I] Chemical compound [F].[I] RNIPBGMVTAUWNH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229940107816 ammonium iodide Drugs 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 208000001814 laryngeal adductor paralysis Diseases 0.000 description 1
- AFRJJFRNGGLMDW-UHFFFAOYSA-N lithium amide Chemical compound [Li+].[NH2-] AFRJJFRNGGLMDW-UHFFFAOYSA-N 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000001089 mineralizing effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- ODZPKZBBUMBTMG-UHFFFAOYSA-N sodium amide Chemical compound [NH2-].[Na+] ODZPKZBBUMBTMG-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012236354A JP2014062023A (ja) | 2011-10-28 | 2012-10-26 | 窒化物結晶の製造方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161552801P | 2011-10-28 | 2011-10-28 | |
| US61/552801 | 2011-10-28 | ||
| JP2012188099 | 2012-08-28 | ||
| JP2012188099 | 2012-08-28 | ||
| JP2012236354A JP2014062023A (ja) | 2011-10-28 | 2012-10-26 | 窒化物結晶の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016146212A Division JP6494571B2 (ja) | 2011-10-28 | 2016-07-26 | ＧａＮ結晶及びＧａＮ結晶からなる基板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2014062023A true JP2014062023A (ja) | 2014-04-10 |
Family
ID=50617629
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012236354A Pending JP2014062023A (ja) | 2011-10-28 | 2012-10-26 | 窒化物結晶の製造方法 |
| JP2013060287A Active JP5929801B2 (ja) | 2012-08-28 | 2013-03-22 | 窒化物結晶の製造方法 |
| JP2016146212A Active JP6494571B2 (ja) | 2011-10-28 | 2016-07-26 | ＧａＮ結晶及びＧａＮ結晶からなる基板 |
| JP2018051986A Active JP6493588B2 (ja) | 2011-10-28 | 2018-03-20 | 窒化物結晶の製造方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013060287A Active JP5929801B2 (ja) | 2012-08-28 | 2013-03-22 | 窒化物結晶の製造方法 |
| JP2016146212A Active JP6494571B2 (ja) | 2011-10-28 | 2016-07-26 | ＧａＮ結晶及びＧａＮ結晶からなる基板 |
| JP2018051986A Active JP6493588B2 (ja) | 2011-10-28 | 2018-03-20 | 窒化物結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (4) | JP2014062023A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015214441A (ja) * | 2014-05-09 | 2015-12-03 | 古河機械金属株式会社 | 自立基板の製造方法および自立基板 |
| JP2017160071A (ja) * | 2016-03-08 | 2017-09-14 | ソラア インコーポレーテッドＳｏｒａａ Ｉｎｃ． | 超高純度鉱化剤および窒化結晶成長の方法 |
| CN115894392A (zh) * | 2022-12-02 | 2023-04-04 | 中国科学院福建物质结构研究所 | (c3h8n6i6)·3h2o化合物、双折射晶体及其制法和用途 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102826740B1 (ko) | 2019-05-30 | 2025-06-27 | 미쯔비시 케미컬 주식회사 | GaN 기판 웨이퍼 및 그 제조 방법 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007238348A (ja) * | 2006-03-06 | 2007-09-20 | Mitsubishi Chemicals Corp | 超臨界溶媒を用いた結晶製造方法および結晶製造装置 |
| JP2008174439A (ja) * | 2006-12-21 | 2008-07-31 | Mitsubishi Chemicals Corp | 窒素元素とガリウム元素を含む粉末の製造方法、およびそれを利用した窒化ガリウム単結晶の製造方法 |
| WO2009044651A1 (ja) * | 2007-10-05 | 2009-04-09 | Mitsubishi Chemical Corporation | 液化アンモニアの充填方法、窒化物結晶の製造方法、および、窒化物結晶成長用反応容器 |
| JP2010509172A (ja) * | 2006-11-09 | 2010-03-25 | モメンティブ パフォーマンス マテリアルズ インコーポレイテッド | 結晶性組成物及びウェハに関連する方法 |
| JP2011153055A (ja) * | 2010-01-28 | 2011-08-11 | Asahi Kasei Corp | 窒化物単結晶の製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6773504B2 (en) * | 2001-04-12 | 2004-08-10 | Sumitomo Electric Industries, Ltd. | Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| AU2003299899A1 (en) * | 2002-12-27 | 2004-07-29 | General Electric Company | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
| JP5356933B2 (ja) * | 2004-03-10 | 2013-12-04 | 三菱化学株式会社 | 窒化物結晶の製造装置 |
| US8754449B2 (en) * | 2004-06-11 | 2014-06-17 | Ammono Sp. Z O.O. | High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof |
| JP2008297191A (ja) * | 2007-05-02 | 2008-12-11 | Sumitomo Electric Ind Ltd | 窒化ガリウム基板及び窒化ガリウム層の形成方法 |
| JP4719788B2 (ja) * | 2008-12-26 | 2011-07-06 | 旭化成株式会社 | １３族元素窒素化合物結晶の製造方法 |
| KR20110112278A (ko) * | 2009-01-08 | 2011-10-12 | 미쓰비시 가가꾸 가부시키가이샤 | 질화물 결정의 제조 방법, 질화물 결정 및 그 제조 장치 |
| JP5709122B2 (ja) * | 2009-02-20 | 2015-04-30 | 三菱化学株式会社 | アモノサーマル法および窒化物結晶 |
| JP5446622B2 (ja) * | 2009-06-29 | 2014-03-19 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶およびその製造方法 |
| JP2012136422A (ja) * | 2010-12-27 | 2012-07-19 | Mitsubishi Chemicals Corp | 結晶製造方法 |
| JP5870887B2 (ja) * | 2011-09-30 | 2016-03-01 | 三菱化学株式会社 | 窒化物単結晶のアニール処理方法 |
| WO2013063070A1 (en) * | 2011-10-24 | 2013-05-02 | The Regents Of The University Of California | Use of alkaline-earth metals to reduce impurity incorporation into a group-iii nitride crystal |
-
2012
- 2012-10-26 JP JP2012236354A patent/JP2014062023A/ja active Pending
-
2013
- 2013-03-22 JP JP2013060287A patent/JP5929801B2/ja active Active
-
2016
- 2016-07-26 JP JP2016146212A patent/JP6494571B2/ja active Active
-
2018
- 2018-03-20 JP JP2018051986A patent/JP6493588B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007238348A (ja) * | 2006-03-06 | 2007-09-20 | Mitsubishi Chemicals Corp | 超臨界溶媒を用いた結晶製造方法および結晶製造装置 |
| JP2010509172A (ja) * | 2006-11-09 | 2010-03-25 | モメンティブ パフォーマンス マテリアルズ インコーポレイテッド | 結晶性組成物及びウェハに関連する方法 |
| JP2008174439A (ja) * | 2006-12-21 | 2008-07-31 | Mitsubishi Chemicals Corp | 窒素元素とガリウム元素を含む粉末の製造方法、およびそれを利用した窒化ガリウム単結晶の製造方法 |
| WO2009044651A1 (ja) * | 2007-10-05 | 2009-04-09 | Mitsubishi Chemical Corporation | 液化アンモニアの充填方法、窒化物結晶の製造方法、および、窒化物結晶成長用反応容器 |
| JP2011153055A (ja) * | 2010-01-28 | 2011-08-11 | Asahi Kasei Corp | 窒化物単結晶の製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015214441A (ja) * | 2014-05-09 | 2015-12-03 | 古河機械金属株式会社 | 自立基板の製造方法および自立基板 |
| JP2017160071A (ja) * | 2016-03-08 | 2017-09-14 | ソラア インコーポレーテッドＳｏｒａａ Ｉｎｃ． | 超高純度鉱化剤および窒化結晶成長の方法 |
| CN115894392A (zh) * | 2022-12-02 | 2023-04-04 | 中国科学院福建物质结构研究所 | (c3h8n6i6)·3h2o化合物、双折射晶体及其制法和用途 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6494571B2 (ja) | 2019-04-03 |
| JP2016222540A (ja) | 2016-12-28 |
| JP5929801B2 (ja) | 2016-06-08 |
| JP6493588B2 (ja) | 2019-04-03 |
| JP2018115110A (ja) | 2018-07-26 |
| JP2014062029A (ja) | 2014-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11162190B2 (en) | Method for producing nitride crystal and nitride crystal | |
| JP6388070B2 (ja) | ＧａＮ単結晶およびウエハ | |
| KR20090064379A (ko) | 질화물 반도체의 제조 방법, 결정 성장 속도 증가제, 질화물 단결정, 웨이퍼 및 디바이스 | |
| JP6493588B2 (ja) | 窒化物結晶の製造方法 | |
| JP6020440B2 (ja) | 窒化物結晶の製造方法 | |
| JP2013107819A (ja) | 窒化物結晶の製造方法 | |
| JPWO2012090918A1 (ja) | 半導体結晶の製造方法、結晶製造装置および第１３族窒化物半導体結晶 | |
| JP6074959B2 (ja) | Ｉｉｉ族窒化物結晶及びその製造方法 | |
| JP5929807B2 (ja) | ＧａＮ多結晶およびそれを用いたＧａＮ単結晶の製造方法 | |
| JP2013075819A (ja) | 窒化物結晶の製造方法 | |
| JP6123421B2 (ja) | Ｉｉｉ族窒化物結晶塊 | |
| JP2013056821A (ja) | Ｉｉｉ族窒化物結晶の製造方法 | |
| JP6051768B2 (ja) | 窒化物単結晶の製造方法 | |
| JP6003690B2 (ja) | 窒化物結晶の製造方法 | |
| KR102101597B1 (ko) | 질화물 결정의 제조 방법 및 질화물 결정 | |
| JP6192956B2 (ja) | 窒化物単結晶の製造方法 | |
| JP2015040169A (ja) | 周期表第１３族金属窒化物結晶 | |
| JP2013184886A (ja) | 窒化物半導体結晶の製造方法および窒化物半導体結晶 | |
| JP2013091596A (ja) | 窒化物結晶の製造方法 | |
| JP2014047134A (ja) | Ｉｉｉ族窒化物結晶塊 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140929 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150430 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150602 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150727 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151006 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160607 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170131 |