WO2009044651A1 - 液化アンモニアの充填方法、窒化物結晶の製造方法、および、窒化物結晶成長用反応容器 - Google Patents
液化アンモニアの充填方法、窒化物結晶の製造方法、および、窒化物結晶成長用反応容器 Download PDFInfo
- Publication number
- WO2009044651A1 WO2009044651A1 PCT/JP2008/067172 JP2008067172W WO2009044651A1 WO 2009044651 A1 WO2009044651 A1 WO 2009044651A1 JP 2008067172 W JP2008067172 W JP 2008067172W WO 2009044651 A1 WO2009044651 A1 WO 2009044651A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ammonia
- nitride crystals
- liquefied
- condenser
- feeding
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1096—Apparatus for crystallization from liquid or supercritical state including pressurized crystallization means [e.g., hydrothermal]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200880109843.8A CN101820990B (zh) | 2007-10-05 | 2008-09-24 | 液氨的填充方法、氮化物结晶的制造方法以及氮化物结晶生长用反应容器 |
US12/681,517 US8721788B2 (en) | 2007-10-05 | 2008-09-24 | Method for charging with liquefied ammonia, method for producing nitride crystal, and reactor for growth of nitride crystal |
EP08835301.6A EP2210660B1 (en) | 2007-10-05 | 2008-09-24 | PROCESS FOR CHARGING LIQUEFIED AMMONIA and PROCESS FOR PRODUCTION OF NITRIDE CRYSTALS |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-262751 | 2007-10-05 | ||
JP2007-262752 | 2007-10-05 | ||
JP2007262751 | 2007-10-05 | ||
JP2007262752 | 2007-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009044651A1 true WO2009044651A1 (ja) | 2009-04-09 |
Family
ID=40526079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/067172 WO2009044651A1 (ja) | 2007-10-05 | 2008-09-24 | 液化アンモニアの充填方法、窒化物結晶の製造方法、および、窒化物結晶成長用反応容器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8721788B2 (ja) |
EP (1) | EP2210660B1 (ja) |
KR (1) | KR20100082769A (ja) |
CN (1) | CN101820990B (ja) |
WO (1) | WO2009044651A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014062023A (ja) * | 2011-10-28 | 2014-04-10 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法 |
US9518337B2 (en) | 2011-10-28 | 2016-12-13 | Mitsubishi Chemical Corporation | Method for producing nitride crystal and nitride crystal |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110112278A (ko) * | 2009-01-08 | 2011-10-12 | 미쓰비시 가가꾸 가부시키가이샤 | 질화물 결정의 제조 방법, 질화물 결정 및 그 제조 장치 |
JP2012012259A (ja) * | 2010-07-01 | 2012-01-19 | Ricoh Co Ltd | 窒化物結晶およびその製造方法 |
WO2015031794A2 (en) * | 2013-08-30 | 2015-03-05 | The Regents Of The University Of California | Reactor vessels for ammonothermal and flux-based growth of group-iii nitride crystals |
CN103526282A (zh) * | 2013-10-22 | 2014-01-22 | 北京大学东莞光电研究院 | 一种生长氮化物单晶体材料的装置及方法 |
CN105371541B (zh) * | 2014-08-28 | 2018-06-26 | 上海海立电器有限公司 | 冷媒注入装置和冷媒注入方法 |
JP6615663B2 (ja) * | 2016-03-22 | 2019-12-04 | 住友重機械工業株式会社 | クライオポンプ、クライオポンプ吸蔵ガス量推測装置及びクライオポンプ吸蔵ガス量推測方法 |
CN106319629A (zh) * | 2016-09-19 | 2017-01-11 | 中原特钢股份有限公司 | 一种用于生产氮化镓晶体的超高压容器 |
CN106838607A (zh) * | 2016-12-15 | 2017-06-13 | 吉林省众鑫汽车装备有限公司 | 固体储氨罐的充氨方法 |
CN108636115B (zh) * | 2018-04-11 | 2020-06-12 | 上海交通大学 | 基于lng冷能的氨源充注系统 |
CN108870077B (zh) * | 2018-08-13 | 2024-04-09 | 浙江英德赛半导体材料股份有限公司 | 高纯氨钢瓶/槽车残液批量处理系统及方法 |
CN114263848B (zh) * | 2020-09-16 | 2023-09-26 | 重庆川维物流有限公司 | 一种液氨槽车装车的低压氨气吹扫装置及其使用方法 |
Citations (6)
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JPH07243712A (ja) * | 1994-03-08 | 1995-09-19 | Toyo Sanso Kk | クライオスタットへの液体ヘリウム補給装置 |
JPH09273837A (ja) | 1996-04-02 | 1997-10-21 | Nippon Steel Corp | 容器への液体アンモニアの充填方法 |
JP2001271998A (ja) * | 2000-03-24 | 2001-10-05 | Mitsubishi Heavy Ind Ltd | 超低温液化ガスの出荷計量装置及び方法 |
JP2003044146A (ja) * | 2001-07-31 | 2003-02-14 | Sanyo Electric Industries Co Ltd | 特定ガスの充填濃度調節器 |
JP2005008444A (ja) * | 2003-06-17 | 2005-01-13 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法 |
JP2005289797A (ja) | 2004-03-10 | 2005-10-20 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法および製造装置 |
Family Cites Families (10)
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CN1116544C (zh) * | 1999-08-30 | 2003-07-30 | 中国石油化工股份有限公司巴陵分公司 | 一种液氨槽车接卸的方法 |
CN1113988C (zh) * | 1999-09-29 | 2003-07-09 | 中国科学院物理研究所 | 一种氮化镓单晶的热液生长方法 |
CN1215972C (zh) * | 2003-01-16 | 2005-08-24 | 山东大学 | 一种在水热条件下多步原位反应合成氮化物微晶和体块晶体的方法 |
CN100450573C (zh) | 2003-11-19 | 2009-01-14 | Scf科技公司 | 在稠密流体处理中控制温度、压力和密度剖面的方法和工艺 |
WO2005116525A2 (en) * | 2004-05-18 | 2005-12-08 | Matheson Tri-Gas, Inc. | On-site generation, purification, and distribution of ultra-pure anhydrous ammonia |
JP5000187B2 (ja) | 2005-05-12 | 2012-08-15 | 株式会社リコー | Iii族窒化物結晶の製造方法 |
JP5023312B2 (ja) * | 2005-07-01 | 2012-09-12 | 三菱化学株式会社 | 超臨界溶媒を用いた結晶製造方法、結晶成長装置、結晶およびデバイス |
US20080289569A1 (en) * | 2005-08-24 | 2008-11-27 | Mitsubishi Chemical Corporation | Method for Producing Group 13 Metal Nitride Crystal, Method for Manufacturing Semiconductor Device, and Solution and Melt Used in Those Methods |
CN101008536A (zh) * | 2006-01-28 | 2007-08-01 | 北京国兆科技有限公司 | 无压缩机的空调系统及其制备方法 |
JP4867884B2 (ja) | 2007-10-05 | 2012-02-01 | 三菱化学株式会社 | 液化アンモニアの充填方法、および、窒化物結晶の製造方法 |
-
2008
- 2008-09-24 US US12/681,517 patent/US8721788B2/en active Active
- 2008-09-24 KR KR1020107007064A patent/KR20100082769A/ko not_active Application Discontinuation
- 2008-09-24 EP EP08835301.6A patent/EP2210660B1/en active Active
- 2008-09-24 WO PCT/JP2008/067172 patent/WO2009044651A1/ja active Application Filing
- 2008-09-24 CN CN200880109843.8A patent/CN101820990B/zh active Active
Patent Citations (6)
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JPH07243712A (ja) * | 1994-03-08 | 1995-09-19 | Toyo Sanso Kk | クライオスタットへの液体ヘリウム補給装置 |
JPH09273837A (ja) | 1996-04-02 | 1997-10-21 | Nippon Steel Corp | 容器への液体アンモニアの充填方法 |
JP2001271998A (ja) * | 2000-03-24 | 2001-10-05 | Mitsubishi Heavy Ind Ltd | 超低温液化ガスの出荷計量装置及び方法 |
JP2003044146A (ja) * | 2001-07-31 | 2003-02-14 | Sanyo Electric Industries Co Ltd | 特定ガスの充填濃度調節器 |
JP2005008444A (ja) * | 2003-06-17 | 2005-01-13 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法 |
JP2005289797A (ja) | 2004-03-10 | 2005-10-20 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法および製造装置 |
Non-Patent Citations (3)
Title |
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CHEN ET AL., J. CRYSTAL GROWTH, vol. 209, 2000, pages 208 |
KOLIS ET AL., J. CRYSTAL GROWTH, vol. 222, 2001, pages 431 |
R. DWILINSKI ET AL., ACTA PHYSICA POLONICA A, vol. 88, 1995, pages 833 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014062023A (ja) * | 2011-10-28 | 2014-04-10 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法 |
US9518337B2 (en) | 2011-10-28 | 2016-12-13 | Mitsubishi Chemical Corporation | Method for producing nitride crystal and nitride crystal |
US10526726B2 (en) | 2011-10-28 | 2020-01-07 | Mitsubishi Chemical Corporation | Method for producing nitride crystal and nitride crystal |
US11162190B2 (en) | 2011-10-28 | 2021-11-02 | Mitsubishi Chemical Corporation | Method for producing nitride crystal and nitride crystal |
Also Published As
Publication number | Publication date |
---|---|
CN101820990A (zh) | 2010-09-01 |
US8721788B2 (en) | 2014-05-13 |
KR20100082769A (ko) | 2010-07-19 |
EP2210660B1 (en) | 2018-07-04 |
US20100294195A1 (en) | 2010-11-25 |
CN101820990B (zh) | 2013-06-12 |
EP2210660A4 (en) | 2014-06-11 |
EP2210660A1 (en) | 2010-07-28 |
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