JP2014047362A - パワー半導体モジュールおよびパワー半導体モジュールの製造方法 - Google Patents
パワー半導体モジュールおよびパワー半導体モジュールの製造方法 Download PDFInfo
- Publication number
- JP2014047362A JP2014047362A JP2012188542A JP2012188542A JP2014047362A JP 2014047362 A JP2014047362 A JP 2014047362A JP 2012188542 A JP2012188542 A JP 2012188542A JP 2012188542 A JP2012188542 A JP 2012188542A JP 2014047362 A JP2014047362 A JP 2014047362A
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- JP
- Japan
- Prior art keywords
- aluminum oxide
- sprayed film
- particles
- power semiconductor
- semiconductor module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
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Images
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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Abstract
【解決手段】パワー半導体モジュールは、半導体チップ(IGBT328およびダイオード156)と、表裏面の一方の面に半導体チップが電気的に接続され、他方の面に放熱面が形成された導体板315,318と、放熱面が露出するように導体板および半導体チップを封止する封止樹脂348と、絶縁層333を介して導体板の放熱面に熱的に接触している放熱部307A,307Bと、を備え、絶縁層333は、放熱面と対向する放熱部307A,307Bの表面または放熱面に、窒化アルミニウム粒子およびα−酸化アルミニウム粒子の混合物を溶射して形成されたセラミックス溶射膜333Aを有し、セラミックス溶射膜333Aは、窒化アルミニウムの体積割合とα−酸化アルミニウムの体積割合の合計が30%以上であって、かつ、断面気孔率が10%以下とされる。
【選択図】図12
Description
本発明に係るパワー半導体モジュールの製造方法は、半導体チップと、表裏面の一方の面に半導体チップが電気的に接続され、他方の面に放熱面が形成された導体板と、放熱面が露出するように導体板および半導体チップを封止する封止樹脂と、セラミックス溶射膜を有する絶縁層を介して放熱面に熱的に接触している金属ベースと、を備えるパワー半導体モジュールの製造方法であって、窒化アルミニウムの体積割合とα−酸化アルミニウムの体積割合の合計が30%以上であって、かつ、断面気孔率が10%以下であるセラミックス溶射膜が形成されるように溶射条件を調整して、放熱面と対向する金属ベースの表面または放熱面に、窒化アルミニウム粒子およびα−酸化アルミニウム粒子の混合物を溶射する第1の工程と、セラミックス溶射膜内に形成された気孔に樹脂を含浸する第2の工程と、を有することを特徴とする。
−第1の実施の形態−
図1はパワーモジュールの外観斜視図である。パワーモジュール300は、スイッチング素子を含む電子部品がトランスファーモールドされたパワー半導体ユニットを、モジュールケース304内に収納したものである。パワーモジュール300は、例えば、電気自動車やハイブリッド自動車等の電気車両に搭載される電力変換装置に用いられる。
図9は、絶縁層333の構造を説明する図である。図9(a)は一次封止体302の断面図であり、図9(b)は図9(a)の符号Bで示した部分の断面構造を模式的に示したものである。絶縁層333は2つの層から成り、セラミックスの粉体をプラズマ溶射して形成されたセラミックス溶射膜333Aの層と、絶縁性の樹脂から成る樹脂層333Bとを備えている。
ところで、前述したように、窒化アルミニウムは昇華する物質であるため、温度上昇に伴って液体状態を経ずに気化してしまい、窒化アルミニウムを溶射することができない。しかしながら、窒化アルミニウム(AlN)の粉末に酸化アルミニウム(Al2O3)の粉末を混合し、かつ、所定の溶射条件てプラズマ溶射することにより、酸化アルミニウムの膜中に窒化アルミニウム粒子が埋設されたような状態の、すなわち、図9(b)のように酸化アルミニウムの溶射膜中に窒化アルミニウム粒子3332が分散した状態のセラミックス溶射膜333Aが形成される。
図14,15は、セラミックス溶射膜333Aの特性を説明する図である。図14は、窒化アルミニウム(AlN)に添加する酸化アルミニウム(Al2O3)の添加量と断面気孔率との関係、および、前記添加量とセラミックス溶射膜中の(AlN+α−Al2O3)の割合を示したものである。
図14の断面気孔率のデータ(白色の菱形)を見ると、酸化アルミニウム(α−酸化アルミニウム)の添加量を0%から増加したとき、添加量がある範囲を越えると断面気孔率は急激に低下する。さらに、酸化アルミニウムの添加量をラインL1で示す添加量よりも大きくすると、断面気孔率は10%を下回った。
上述したように、温度が上昇すると、α−酸化アルミニウムはγ−酸化アルミニウムへと変態する。さらに、図14の体積割合に関するデータ(黒色の矩形)から分かるように、酸化アルミニウム粉末の添加量を増やすと、酸化アルミニウムはα相からγ相へと変態しやすくなる。このことは、溶射膜に対するX線回折による相の同定で把握できる。そのため、図14に示すように、酸化アルミニウム(α−酸化アルミニウム)粉末の添加量が小さい領域では、体積割合は30%を大きく上回っているが、酸化アルミニウム粉末の添加量を増加すると体積割合は徐々に減少し、ラインL2で示す添加量付近から急激に減少する。ラインL2は、体積割合が30%となるところの添加量を示している。
上述した第1の実施の形態では、絶縁層333の構成は、セラミックス溶射膜333Aの上に樹脂層333Bを積層する構造とした。この場合、セラミックス溶射膜333Aの表面付近の気孔3330内には樹脂が入り込むが、全体的には、セラミックス溶射膜333A単体の伝熱性能と樹脂層333Bの伝熱性能とによって絶縁層333の伝熱性能が決まる。
Claims (10)
- 半導体チップと、
表裏面の一方の面に前記半導体チップが電気的に接続され、他方の面に放熱面が形成された導体板と、
前記放熱面が露出するように前記導体板および前記半導体チップを封止する封止樹脂と、
絶縁層を介して前記導体板の放熱面に熱的に接触している金属ベースと、を備え、
前記絶縁層は、前記放熱面と対向する前記金属ベースの表面または前記放熱面に、窒化アルミニウム粒子およびα−酸化アルミニウム粒子の混合物を溶射して形成されたセラミックス溶射膜を有し、
前記セラミックス溶射膜は、窒化アルミニウムの体積割合とα−酸化アルミニウムの体積割合の合計が30%以上であって、かつ、断面気孔率が10%以下であるパワー半導体モジュール。 - 請求項1に記載のパワー半導体モジュールにおいて、
前記セラミックス溶射膜の気孔に樹脂が含浸されていることを特徴とするパワー半導体モジュール。 - 請求項2に記載のパワー半導体モジュールにおいて、
前記セラミックス溶射膜の厚さが80μm以上200μm以下であることを特徴とするパワー半導体モジュール。 - 請求項1乃至3のいずれか一項に記載のパワー半導体モジュールにおいて、
前記セラミックス溶射膜は、窒化アルミニウム粒子と、α−酸化アルミニウム粒子と、γ−酸化アルミニウムよりも熱伝導率の高いセラミックス粒子との混合物を溶射して形成されることを特徴とするパワー半導体モジュール。 - 請求項4に記載のパワー半導体モジュールにおいて、
前記セラミックス粒子は、酸化イットリウム(Y2O3)粒子、酸化ジルコニア(Zr2O3)粒子、炭化ケイ素(SiC)粒子、窒化珪素(Si3N4)粒子の少なくとも1種類を含むことを特徴とするパワー半導体モジュール。 - 請求項1または2に記載のパワー半導体モジュールにおいて、
前記セラミックス溶射膜のX線回折ピーク強度は、
窒化アルミニウムの(100)面のピーク強度、α−酸化アルミニウムの(113)面のピーク強度およびγ−酸化アルミニウムの(400)面のピーク強度の合計値に対する、窒化アルミニウムの(100)面のピーク強度およびα−酸化アルミニウムの(113)面のピーク強度の合計値の比率が30%以上であることを特徴とするパワー半導体モジュール。 - 半導体チップと、表裏面の一方の面に前記半導体チップが電気的に接続され、他方の面に放熱面が形成された導体板と、前記放熱面が露出するように前記導体板および前記半導体チップを封止する封止樹脂と、セラミックス溶射膜を有する絶縁層を介して前記放熱面に熱的に接触している金属ベースと、を備えるパワー半導体モジュールの製造方法であって、
窒化アルミニウムの体積割合とα−酸化アルミニウムの体積割合の合計が30%以上であって、かつ、断面気孔率が10%以下であるセラミックス溶射膜が形成されるように溶射条件を調整して、前記放熱面と対向する前記金属ベースの表面または前記放熱面に、窒化アルミニウム粒子およびα−酸化アルミニウム粒子の混合物を溶射する第1の工程と、
前記セラミックス溶射膜内に形成された気孔に樹脂を含浸する第2の工程と、を有するパワー半導体モジュールの製造方法。 - 請求項7に記載のパワー半導体モジュールの製造方法において、
前記溶射条件には、窒化アルミニウム粒子およびα−酸化アルミニウム粒子の混合物におけるα−酸化アルミニウム粒子の混合比率と、溶射時における前記混合物の加熱温度とが含まれることを特徴とするパワー半導体モジュールの製造方法。 - 請求項8に記載のパワー半導体モジュールの製造方法において、
前記混合比率を40〜62mass%に設定するとともに、前記加熱温度を2000〜2200℃に設定し、溶射される前記混合物の温度が前記加熱温度となるように加熱源の溶射施工条件を調整することを特徴とするパワー半導体モジュールの製造方法。 - 請求項7乃至9のいずれか一項に記載のパワー半導体モジュールの製造方法において、
前記第1の工程と前記第2の工程との間に、前記セラミックス溶射膜の表面を研磨または研削により平坦化する工程をさらに設け、
前記第2の工程では、前記平坦化された表面から前記樹脂を含浸することを特徴とするパワー半導体モジュールの製造方法。
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