JP2014045192A5 - - Google Patents

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Publication number
JP2014045192A5
JP2014045192A5 JP2013172804A JP2013172804A JP2014045192A5 JP 2014045192 A5 JP2014045192 A5 JP 2014045192A5 JP 2013172804 A JP2013172804 A JP 2013172804A JP 2013172804 A JP2013172804 A JP 2013172804A JP 2014045192 A5 JP2014045192 A5 JP 2014045192A5
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JP
Japan
Prior art keywords
light emitting
emitting device
semiconductor layer
layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2013172804A
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English (en)
Japanese (ja)
Other versions
JP6294031B2 (ja
JP2014045192A (ja
Filing date
Publication date
Priority claimed from KR1020120093016A external-priority patent/KR101957816B1/ko
Application filed filed Critical
Publication of JP2014045192A publication Critical patent/JP2014045192A/ja
Publication of JP2014045192A5 publication Critical patent/JP2014045192A5/ja
Application granted granted Critical
Publication of JP6294031B2 publication Critical patent/JP6294031B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013172804A 2012-08-24 2013-08-23 発光素子 Expired - Fee Related JP6294031B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120093016A KR101957816B1 (ko) 2012-08-24 2012-08-24 발광 소자
KR10-2012-0093016 2012-08-24

Publications (3)

Publication Number Publication Date
JP2014045192A JP2014045192A (ja) 2014-03-13
JP2014045192A5 true JP2014045192A5 (OSRAM) 2016-10-06
JP6294031B2 JP6294031B2 (ja) 2018-03-14

Family

ID=49028998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013172804A Expired - Fee Related JP6294031B2 (ja) 2012-08-24 2013-08-23 発光素子

Country Status (4)

Country Link
US (1) US9478718B2 (OSRAM)
EP (1) EP2701211B1 (OSRAM)
JP (1) JP6294031B2 (OSRAM)
KR (1) KR101957816B1 (OSRAM)

Families Citing this family (19)

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Publication number Priority date Publication date Assignee Title
US20160005919A1 (en) * 2013-02-05 2016-01-07 Tokuyama Corporation Nitride semiconductor light emitting device
KR102066620B1 (ko) * 2013-07-18 2020-01-16 엘지이노텍 주식회사 발광 소자
US10361343B2 (en) * 2014-07-02 2019-07-23 Trustees Of Boston University Ultraviolet light emitting diodes
TWI625868B (zh) 2014-07-03 2018-06-01 晶元光電股份有限公司 光電元件及其製造方法
TWI883921B (zh) * 2014-07-03 2025-05-11 晶元光電股份有限公司 光電元件
WO2016018109A1 (ko) * 2014-07-31 2016-02-04 서울바이오시스 주식회사 발광 다이오드
KR102322692B1 (ko) * 2015-05-29 2021-11-05 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 자외선 발광소자
US10950747B2 (en) 2015-07-01 2021-03-16 Sensor Electronic Technology, Inc. Heterostructure for an optoelectronic device
KR102066928B1 (ko) 2015-07-01 2020-01-16 센서 일렉트로닉 테크놀로지, 인크 기판 구조체 제거
KR102378952B1 (ko) * 2015-08-27 2022-03-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 발광소자 패키지
EP3350844B1 (en) * 2015-09-17 2021-10-27 Crystal Is, Inc. Ultraviolet light-emitting devices incorporating two-dimensional hole gases
JP6573076B2 (ja) * 2016-02-01 2019-09-11 パナソニック株式会社 紫外線発光素子
JP6805674B2 (ja) 2016-09-21 2020-12-23 豊田合成株式会社 発光素子及びその製造方法
CN106784349B (zh) * 2016-12-21 2020-02-07 Tcl集团股份有限公司 一种能级势垒高度连续变化的量子点固态膜及其制备方法
JP6812790B2 (ja) * 2016-12-28 2021-01-13 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
US11069834B2 (en) * 2017-09-18 2021-07-20 King Abdullah University Of Science And Technology Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
DE102018120490A1 (de) 2018-08-22 2020-02-27 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
KR102848932B1 (ko) * 2019-10-04 2025-08-20 캠브리지 엔터프라이즈 리미티드 등축정계 GaN의 양자 와이어로부터의 편광된 방출광
CN116325192B (zh) * 2020-11-25 2025-06-03 苏州晶湛半导体有限公司 光电器件及其制备方法

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Publication number Priority date Publication date Assignee Title
JP3468082B2 (ja) * 1998-02-26 2003-11-17 日亜化学工業株式会社 窒化物半導体素子
JPH11340505A (ja) * 1998-05-25 1999-12-10 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP4465941B2 (ja) * 2001-11-22 2010-05-26 富士ゼロックス株式会社 紫外線受光素子
US7358539B2 (en) 2003-04-09 2008-04-15 Lumination Llc Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts
JP2006066556A (ja) * 2004-08-25 2006-03-09 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子およびその製造方法
JP5032171B2 (ja) * 2007-03-26 2012-09-26 株式会社東芝 半導体発光素子およびその製造方法ならびに発光装置
WO2009072365A1 (ja) * 2007-12-07 2009-06-11 Idemitsu Kosan Co., Ltd. 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜
US8394711B2 (en) * 2009-02-12 2013-03-12 The Curators Of The University Of Missouri Systems and methods for co-doping wide band gap materials
WO2010116422A1 (ja) * 2009-04-09 2010-10-14 パナソニック株式会社 窒化物系半導体発光素子、照明装置、液晶表示装置ならびに窒化物系半導体発光素子および照明装置の製造方法
US8629473B2 (en) * 2009-08-13 2014-01-14 Toyoda Gosei Co., Ltd. Semiconductor light-emitting element, semiconductor light-emitting device, method for producing semiconductor light-emitting element, method for producing semiconductor light-emitting device, illumination device using semiconductor light-emitting device, and electronic apparatus
KR101028286B1 (ko) 2009-12-28 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20120041439A (ko) * 2010-10-21 2012-05-02 한국광기술원 질화물계 반도체 소자 및 그의 제조 방법
KR20120051205A (ko) 2010-11-12 2012-05-22 엘지이노텍 주식회사 발광 소자
US20130292685A1 (en) * 2012-05-05 2013-11-07 Texas Tech University System Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures

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