JP2013532307A5 - - Google Patents

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Publication number
JP2013532307A5
JP2013532307A5 JP2013512805A JP2013512805A JP2013532307A5 JP 2013532307 A5 JP2013532307 A5 JP 2013532307A5 JP 2013512805 A JP2013512805 A JP 2013512805A JP 2013512805 A JP2013512805 A JP 2013512805A JP 2013532307 A5 JP2013532307 A5 JP 2013532307A5
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JP
Japan
Prior art keywords
measuring
photolithographic mask
performance
electron beam
defect
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JP2013512805A
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English (en)
Japanese (ja)
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JP5719019B2 (ja
JP2013532307A (ja
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Priority claimed from PCT/EP2011/056869 external-priority patent/WO2011151116A1/en
Publication of JP2013532307A publication Critical patent/JP2013532307A/ja
Publication of JP2013532307A5 publication Critical patent/JP2013532307A5/ja
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Publication of JP5719019B2 publication Critical patent/JP5719019B2/ja
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JP2013512805A 2010-06-03 2011-04-29 フォトリソグラフィマスクの性能を判断する方法 Active JP5719019B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35105610P 2010-06-03 2010-06-03
US61/351,056 2010-06-03
PCT/EP2011/056869 WO2011151116A1 (en) 2010-06-03 2011-04-29 A method for determining the performance of a photolithographic mask

Publications (3)

Publication Number Publication Date
JP2013532307A JP2013532307A (ja) 2013-08-15
JP2013532307A5 true JP2013532307A5 (enExample) 2014-08-21
JP5719019B2 JP5719019B2 (ja) 2015-05-13

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JP2013512805A Active JP5719019B2 (ja) 2010-06-03 2011-04-29 フォトリソグラフィマスクの性能を判断する方法

Country Status (4)

Country Link
US (1) US9431212B2 (enExample)
JP (1) JP5719019B2 (enExample)
TW (1) TWI529386B (enExample)
WO (1) WO2011151116A1 (enExample)

Families Citing this family (14)

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US8692193B2 (en) * 2010-08-05 2014-04-08 Hermes Microvision, Inc. Method for inspecting EUV reticle and apparatus thereof
EP2605005A1 (en) * 2011-12-14 2013-06-19 FEI Company Clustering of multi-modal data
DE102011080100B4 (de) 2011-07-29 2018-08-23 Carl Zeiss Smt Gmbh Verfahren zum Bearbeiten von Defekten eines optischen Elements für den EUV Bereich
US10838123B2 (en) 2012-01-19 2020-11-17 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
KR102235616B1 (ko) 2014-08-14 2021-04-02 삼성전자주식회사 포토마스크, 포토마스크 제조방법, 및 포토마스크를 이용한 반도체 소자 제조방법
US9696268B2 (en) 2014-10-27 2017-07-04 Kla-Tencor Corporation Automated decision-based energy-dispersive x-ray methodology and apparatus
SG11201704226PA (en) * 2014-11-26 2017-06-29 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
JP6646290B2 (ja) * 2014-12-17 2020-02-14 国立研究開発法人産業技術総合研究所 試料中の元素の測定方法、及び濃度分布の可視化方法
JP6527799B2 (ja) 2015-09-25 2019-06-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置及びパターン測定装置
KR20170066846A (ko) * 2015-12-07 2017-06-15 삼성전자주식회사 주사 전자 현미경을 이용한 구조 해석 방법
US11531262B2 (en) * 2019-12-30 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask blanks and methods for depositing layers on mask blank
US11579539B2 (en) * 2021-03-03 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for improving critical dimension variation
WO2022201138A1 (en) 2021-03-24 2022-09-29 Carl Zeiss Sms Ltd. Method for generating a local surface modification of an optical element used in a lithographic system
DE102022118874B3 (de) * 2022-07-27 2023-11-23 Carl Zeiss Smt Gmbh Verfahren zum Elektronenstrahl-induzierten Bearbeiten eines Defekts einer Photomaske für die Mikrolithographie

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JPH0754687B2 (ja) * 1987-04-24 1995-06-07 株式会社日立製作所 パターン検査方法およびその装置
US5665968A (en) * 1992-05-27 1997-09-09 Kla Instruments Corporation Inspecting optical masks with electron beam microscopy
JPH0728226A (ja) 1993-04-30 1995-01-31 Internatl Business Mach Corp <Ibm> 領域的イメージを測定する装置及び方法
JP4759146B2 (ja) * 1999-05-25 2011-08-31 ケーエルエー−テンカー コーポレイション 二重ビームを備えた二次電子放射顕微鏡のための装置および方法
US6610980B2 (en) * 2000-05-15 2003-08-26 Kla-Tencor Corporation Apparatus for inspection of semiconductor wafers and masks using a low energy electron microscope with two illuminating beams
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US7212282B2 (en) * 2004-02-20 2007-05-01 The Regents Of The University Of California Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns
CN101120329A (zh) * 2004-10-12 2008-02-06 恪纳腾技术公司 用于分类样品上的缺陷的计算机实现的方法和系统
NL1027836C2 (nl) 2004-12-21 2006-06-22 Stichting Fund Ond Material Meerlagenspiegel voor straling in het zachte-röntgen- en XUV-golflengtegebied.
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JP4691453B2 (ja) * 2006-02-22 2011-06-01 株式会社日立ハイテクノロジーズ 欠陥表示方法およびその装置
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JP5352144B2 (ja) 2008-07-22 2013-11-27 株式会社荏原製作所 荷電粒子ビーム検査方法及び装置
JP2010109164A (ja) 2008-10-30 2010-05-13 Toshiba Corp Ｅｕｖマスクの欠陥修正方法
JP2010206177A (ja) * 2009-02-06 2010-09-16 Toshiba Corp 露光用マスク及びその製造方法並びに半導体装置の製造方法
CN101833235B (zh) * 2009-03-13 2012-11-14 中芯国际集成电路制造(上海)有限公司 掩模版原片的质量检测系统和方法
JP2010219445A (ja) * 2009-03-18 2010-09-30 Nuflare Technology Inc 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置

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