JP5719019B2 - フォトリソグラフィマスクの性能を判断する方法 - Google Patents

フォトリソグラフィマスクの性能を判断する方法 Download PDF

Info

Publication number
JP5719019B2
JP5719019B2 JP2013512805A JP2013512805A JP5719019B2 JP 5719019 B2 JP5719019 B2 JP 5719019B2 JP 2013512805 A JP2013512805 A JP 2013512805A JP 2013512805 A JP2013512805 A JP 2013512805A JP 5719019 B2 JP5719019 B2 JP 5719019B2
Authority
JP
Japan
Prior art keywords
defect
mask
photolithographic mask
electron beam
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013512805A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013532307A5 (enExample
JP2013532307A (ja
Inventor
マルクス ヴァイブリンガー
マルクス ヴァイブリンガー
ミハエル ブダッハ
ミハエル ブダッハ
トーマス シェリューブル
トーマス シェリューブル
ディルク バイアー
ディルク バイアー
Original Assignee
カール ツァイス エスエムエス ゲーエムベーハー
カール ツァイス エスエムエス ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール ツァイス エスエムエス ゲーエムベーハー, カール ツァイス エスエムエス ゲーエムベーハー filed Critical カール ツァイス エスエムエス ゲーエムベーハー
Publication of JP2013532307A publication Critical patent/JP2013532307A/ja
Publication of JP2013532307A5 publication Critical patent/JP2013532307A5/ja
Application granted granted Critical
Publication of JP5719019B2 publication Critical patent/JP5719019B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
    • G01N23/2208—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement all measurements being of a secondary emission, e.g. combination of SE measurement and characteristic X-ray measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/072—Investigating materials by wave or particle radiation secondary emission combination of measurements, 2 kinds of secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/079—Investigating materials by wave or particle radiation secondary emission incident electron beam and measuring excited X-rays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2013512805A 2010-06-03 2011-04-29 フォトリソグラフィマスクの性能を判断する方法 Active JP5719019B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35105610P 2010-06-03 2010-06-03
US61/351,056 2010-06-03
PCT/EP2011/056869 WO2011151116A1 (en) 2010-06-03 2011-04-29 A method for determining the performance of a photolithographic mask

Publications (3)

Publication Number Publication Date
JP2013532307A JP2013532307A (ja) 2013-08-15
JP2013532307A5 JP2013532307A5 (enExample) 2014-08-21
JP5719019B2 true JP5719019B2 (ja) 2015-05-13

Family

ID=44201946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013512805A Active JP5719019B2 (ja) 2010-06-03 2011-04-29 フォトリソグラフィマスクの性能を判断する方法

Country Status (4)

Country Link
US (1) US9431212B2 (enExample)
JP (1) JP5719019B2 (enExample)
TW (1) TWI529386B (enExample)
WO (1) WO2011151116A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8692193B2 (en) * 2010-08-05 2014-04-08 Hermes Microvision, Inc. Method for inspecting EUV reticle and apparatus thereof
EP2605005A1 (en) * 2011-12-14 2013-06-19 FEI Company Clustering of multi-modal data
DE102011080100B4 (de) 2011-07-29 2018-08-23 Carl Zeiss Smt Gmbh Verfahren zum Bearbeiten von Defekten eines optischen Elements für den EUV Bereich
US10838123B2 (en) 2012-01-19 2020-11-17 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
KR102235616B1 (ko) 2014-08-14 2021-04-02 삼성전자주식회사 포토마스크, 포토마스크 제조방법, 및 포토마스크를 이용한 반도체 소자 제조방법
US9696268B2 (en) 2014-10-27 2017-07-04 Kla-Tencor Corporation Automated decision-based energy-dispersive x-ray methodology and apparatus
KR102527501B1 (ko) * 2014-11-26 2023-05-02 수프리야 자이스왈 리소그라피 및 기타 용도에서 극자외방사선과 함께 사용하기 위한 재료, 구성요소 및 방법
JP6646290B2 (ja) * 2014-12-17 2020-02-14 国立研究開発法人産業技術総合研究所 試料中の元素の測定方法、及び濃度分布の可視化方法
JP6527799B2 (ja) 2015-09-25 2019-06-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置及びパターン測定装置
KR20170066846A (ko) * 2015-12-07 2017-06-15 삼성전자주식회사 주사 전자 현미경을 이용한 구조 해석 방법
US11531262B2 (en) * 2019-12-30 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask blanks and methods for depositing layers on mask blank
US11579539B2 (en) * 2021-03-03 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for improving critical dimension variation
WO2022201138A1 (en) 2021-03-24 2022-09-29 Carl Zeiss Sms Ltd. Method for generating a local surface modification of an optical element used in a lithographic system
DE102022118874B3 (de) * 2022-07-27 2023-11-23 Carl Zeiss Smt Gmbh Verfahren zum Elektronenstrahl-induzierten Bearbeiten eines Defekts einer Photomaske für die Mikrolithographie

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754687B2 (ja) * 1987-04-24 1995-06-07 株式会社日立製作所 パターン検査方法およびその装置
US5717204A (en) * 1992-05-27 1998-02-10 Kla Instruments Corporation Inspecting optical masks with electron beam microscopy
JPH0728226A (ja) 1993-04-30 1995-01-31 Internatl Business Mach Corp <Ibm> 領域的イメージを測定する装置及び方法
DE60043103D1 (de) * 1999-05-25 2009-11-19 Kla Tencor Corp Gerät und verfahren zur sekundärelektronen-mikroskopie mittels doppelten strahles
US6610980B2 (en) * 2000-05-15 2003-08-26 Kla-Tencor Corporation Apparatus for inspection of semiconductor wafers and masks using a low energy electron microscope with two illuminating beams
DE10208043B4 (de) * 2002-02-25 2011-01-13 Carl Zeiss Nts Gmbh Materialbearbeitungssystem und Materialbearbeitungsverfahren
US7212282B2 (en) * 2004-02-20 2007-05-01 The Regents Of The University Of California Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns
WO2006044426A2 (en) * 2004-10-12 2006-04-27 Kla-Tencor Technologies Corp. Computer-implemented methods and systems for classifying defects on a specimen
NL1027836C2 (nl) 2004-12-21 2006-06-22 Stichting Fund Ond Material Meerlagenspiegel voor straling in het zachte-röntgen- en XUV-golflengtegebied.
US7570796B2 (en) * 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
JP4691453B2 (ja) * 2006-02-22 2011-06-01 株式会社日立ハイテクノロジーズ 欠陥表示方法およびその装置
TWI334933B (en) * 2006-04-03 2010-12-21 Cebt Co Ltd Hole inspection apparatus and hole inspection method using the same
DE102006043895B9 (de) * 2006-09-19 2012-02-09 Carl Zeiss Nts Gmbh Elektronenmikroskop zum Inspizieren und Bearbeiten eines Objekts mit miniaturisierten Strukturen
JP2008203109A (ja) * 2007-02-21 2008-09-04 Hitachi High-Technologies Corp パターン寸法計測方法及びその装置
US7564545B2 (en) * 2007-03-15 2009-07-21 Kla-Tencor Technologies Corp. Inspection methods and systems for lithographic masks
DE102007054074A1 (de) * 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System zum Bearbeiten eines Objekts
JP2009270976A (ja) 2008-05-08 2009-11-19 Hitachi High-Technologies Corp 欠陥レビュー方法および欠陥レビュー装置
JP2010002772A (ja) * 2008-06-20 2010-01-07 Toshiba Corp パターン検証・検査方法、光学像強度分布取得方法および光学像強度分布取得プログラム
JP5352144B2 (ja) * 2008-07-22 2013-11-27 株式会社荏原製作所 荷電粒子ビーム検査方法及び装置
JP2010109164A (ja) * 2008-10-30 2010-05-13 Toshiba Corp Ｅｕｖマスクの欠陥修正方法
JP2010206177A (ja) * 2009-02-06 2010-09-16 Toshiba Corp 露光用マスク及びその製造方法並びに半導体装置の製造方法
CN101833235B (zh) * 2009-03-13 2012-11-14 中芯国际集成电路制造(上海)有限公司 掩模版原片的质量检测系统和方法
JP2010219445A (ja) * 2009-03-18 2010-09-30 Nuflare Technology Inc 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置

Also Published As

Publication number Publication date
TWI529386B (zh) 2016-04-11
WO2011151116A1 (en) 2011-12-08
TW201221943A (en) 2012-06-01
US9431212B2 (en) 2016-08-30
JP2013532307A (ja) 2013-08-15
US20130126728A1 (en) 2013-05-23

Similar Documents

Publication Publication Date Title
JP5719019B2 (ja) フォトリソグラフィマスクの性能を判断する方法
TWI833979B (zh) 計量系統及方法
EP3762780B1 (en) Metrology and control of overlay and edge placement errors
Nakamae Electron microscopy in semiconductor inspection
US9846132B2 (en) Small-angle scattering X-ray metrology systems and methods
US10634490B2 (en) Determining edge roughness parameters
KR20200018824A (ko) 다색 연엑스선 회절에 기초한 반도체 계측을 위한 방법 및 시스템
US20030132382A1 (en) System and method for inspecting a mask
JP2021505959A (ja) デバイスに関連付けられたオーバーレイの計測のためのシステムおよび方法
CN114981923B (zh) 带电粒子束描绘方法以及带电粒子束描绘装置
US20210136901A1 (en) Laser Produced Plasma Illuminator With Liquid Sheet Jet Target
CN114641685A (zh) 具有低原子序数低温标靶的激光生成等离子体照明器
KR20200118489A (ko) 검사 툴 및 검사 방법
TW202335022A (zh) 提供拓樸資訊的高解析度低能量電子顯微鏡與光罩檢查方法
TWI867328B (zh) 圖案化器件缺陷偵測系統及方法
JP7241746B2 (ja) 電子ビーム生成および測定
JP7167371B2 (ja) 後方散乱粒子による埋め込みフィーチャの検出
Maas et al. Evaluation of EUV resist performance below 20nm CD using helium ion lithography
TW201945863A (zh) 檢測工具、檢測方法及電腦程式產品
KR20240167021A (ko) 매립된 피처의 오버레이 측정을 위한 전자 빔 최적화
US11487211B2 (en) Device and method for processing a microstructured component
TW202405379A (zh) 篩選邊緣安置均勻性晶圓隨機指標
Jeong et al. Actinic EUVL mask blank defect inspection system
TW202516564A (zh) 利用無模型機器學習之陣列下cmos(cua)結構存在中之計量
JP6237048B2 (ja) パターン計測方法及び装置

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140106

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140402

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140409

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140501

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140512

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140602

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140609

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20140707

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140903

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150105

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20150213

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150309

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150319

R150 Certificate of patent or registration of utility model

Ref document number: 5719019

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250