TWI529386B - 決定微影光罩之性能的方法 - Google Patents
決定微影光罩之性能的方法 Download PDFInfo
- Publication number
- TWI529386B TWI529386B TW100119555A TW100119555A TWI529386B TW I529386 B TWI529386 B TW I529386B TW 100119555 A TW100119555 A TW 100119555A TW 100119555 A TW100119555 A TW 100119555A TW I529386 B TWI529386 B TW I529386B
- Authority
- TW
- Taiwan
- Prior art keywords
- defect
- mask
- electron beam
- performance
- measuring
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 42
- 238000010894 electron beam technology Methods 0.000 claims description 90
- 230000007547 defect Effects 0.000 claims description 76
- 230000003993 interaction Effects 0.000 claims description 49
- 238000001459 lithography Methods 0.000 claims description 37
- 239000006096 absorbing agent Substances 0.000 claims description 33
- 239000002243 precursor Substances 0.000 claims description 26
- 230000008439 repair process Effects 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 31
- 239000000203 mixture Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 14
- 238000004088 simulation Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 11
- 230000005855 radiation Effects 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 230000005672 electromagnetic field Effects 0.000 description 8
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000001493 electron microscopy Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005293 physical law Methods 0.000 description 3
- 238000004626 scanning electron microscopy Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
- G01N23/2208—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement all measurements being of a secondary emission, e.g. combination of SE measurement and characteristic X-ray measurement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
- G03F1/86—Inspecting by charged particle beam [CPB]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/072—Investigating materials by wave or particle radiation secondary emission combination of measurements, 2 kinds of secondary emission
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/079—Investigating materials by wave or particle radiation secondary emission incident electron beam and measuring excited X-rays
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35105610P | 2010-06-03 | 2010-06-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201221943A TW201221943A (en) | 2012-06-01 |
| TWI529386B true TWI529386B (zh) | 2016-04-11 |
Family
ID=44201946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100119555A TWI529386B (zh) | 2010-06-03 | 2011-06-03 | 決定微影光罩之性能的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9431212B2 (enExample) |
| JP (1) | JP5719019B2 (enExample) |
| TW (1) | TWI529386B (enExample) |
| WO (1) | WO2011151116A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8692193B2 (en) * | 2010-08-05 | 2014-04-08 | Hermes Microvision, Inc. | Method for inspecting EUV reticle and apparatus thereof |
| EP2605005A1 (en) * | 2011-12-14 | 2013-06-19 | FEI Company | Clustering of multi-modal data |
| DE102011080100B4 (de) | 2011-07-29 | 2018-08-23 | Carl Zeiss Smt Gmbh | Verfahren zum Bearbeiten von Defekten eines optischen Elements für den EUV Bereich |
| US10838123B2 (en) | 2012-01-19 | 2020-11-17 | Supriya Jaiswal | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
| KR102235616B1 (ko) | 2014-08-14 | 2021-04-02 | 삼성전자주식회사 | 포토마스크, 포토마스크 제조방법, 및 포토마스크를 이용한 반도체 소자 제조방법 |
| US9696268B2 (en) | 2014-10-27 | 2017-07-04 | Kla-Tencor Corporation | Automated decision-based energy-dispersive x-ray methodology and apparatus |
| KR102527501B1 (ko) * | 2014-11-26 | 2023-05-02 | 수프리야 자이스왈 | 리소그라피 및 기타 용도에서 극자외방사선과 함께 사용하기 위한 재료, 구성요소 및 방법 |
| JP6646290B2 (ja) * | 2014-12-17 | 2020-02-14 | 国立研究開発法人産業技術総合研究所 | 試料中の元素の測定方法、及び濃度分布の可視化方法 |
| JP6527799B2 (ja) | 2015-09-25 | 2019-06-05 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及びパターン測定装置 |
| KR20170066846A (ko) * | 2015-12-07 | 2017-06-15 | 삼성전자주식회사 | 주사 전자 현미경을 이용한 구조 해석 방법 |
| US11531262B2 (en) * | 2019-12-30 | 2022-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask blanks and methods for depositing layers on mask blank |
| US11579539B2 (en) * | 2021-03-03 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for improving critical dimension variation |
| WO2022201138A1 (en) | 2021-03-24 | 2022-09-29 | Carl Zeiss Sms Ltd. | Method for generating a local surface modification of an optical element used in a lithographic system |
| DE102022118874B3 (de) * | 2022-07-27 | 2023-11-23 | Carl Zeiss Smt Gmbh | Verfahren zum Elektronenstrahl-induzierten Bearbeiten eines Defekts einer Photomaske für die Mikrolithographie |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0754687B2 (ja) * | 1987-04-24 | 1995-06-07 | 株式会社日立製作所 | パターン検査方法およびその装置 |
| US5717204A (en) * | 1992-05-27 | 1998-02-10 | Kla Instruments Corporation | Inspecting optical masks with electron beam microscopy |
| JPH0728226A (ja) | 1993-04-30 | 1995-01-31 | Internatl Business Mach Corp <Ibm> | 領域的イメージを測定する装置及び方法 |
| DE60043103D1 (de) * | 1999-05-25 | 2009-11-19 | Kla Tencor Corp | Gerät und verfahren zur sekundärelektronen-mikroskopie mittels doppelten strahles |
| US6610980B2 (en) * | 2000-05-15 | 2003-08-26 | Kla-Tencor Corporation | Apparatus for inspection of semiconductor wafers and masks using a low energy electron microscope with two illuminating beams |
| DE10208043B4 (de) * | 2002-02-25 | 2011-01-13 | Carl Zeiss Nts Gmbh | Materialbearbeitungssystem und Materialbearbeitungsverfahren |
| US7212282B2 (en) * | 2004-02-20 | 2007-05-01 | The Regents Of The University Of California | Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns |
| WO2006044426A2 (en) * | 2004-10-12 | 2006-04-27 | Kla-Tencor Technologies Corp. | Computer-implemented methods and systems for classifying defects on a specimen |
| NL1027836C2 (nl) | 2004-12-21 | 2006-06-22 | Stichting Fund Ond Material | Meerlagenspiegel voor straling in het zachte-röntgen- en XUV-golflengtegebied. |
| US7570796B2 (en) * | 2005-11-18 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
| JP4691453B2 (ja) * | 2006-02-22 | 2011-06-01 | 株式会社日立ハイテクノロジーズ | 欠陥表示方法およびその装置 |
| TWI334933B (en) * | 2006-04-03 | 2010-12-21 | Cebt Co Ltd | Hole inspection apparatus and hole inspection method using the same |
| DE102006043895B9 (de) * | 2006-09-19 | 2012-02-09 | Carl Zeiss Nts Gmbh | Elektronenmikroskop zum Inspizieren und Bearbeiten eines Objekts mit miniaturisierten Strukturen |
| JP2008203109A (ja) * | 2007-02-21 | 2008-09-04 | Hitachi High-Technologies Corp | パターン寸法計測方法及びその装置 |
| US7564545B2 (en) * | 2007-03-15 | 2009-07-21 | Kla-Tencor Technologies Corp. | Inspection methods and systems for lithographic masks |
| DE102007054074A1 (de) * | 2007-11-13 | 2009-05-14 | Carl Zeiss Nts Gmbh | System zum Bearbeiten eines Objekts |
| JP2009270976A (ja) | 2008-05-08 | 2009-11-19 | Hitachi High-Technologies Corp | 欠陥レビュー方法および欠陥レビュー装置 |
| JP2010002772A (ja) * | 2008-06-20 | 2010-01-07 | Toshiba Corp | パターン検証・検査方法、光学像強度分布取得方法および光学像強度分布取得プログラム |
| JP5352144B2 (ja) * | 2008-07-22 | 2013-11-27 | 株式会社荏原製作所 | 荷電粒子ビーム検査方法及び装置 |
| JP2010109164A (ja) * | 2008-10-30 | 2010-05-13 | Toshiba Corp | Ｅｕｖマスクの欠陥修正方法 |
| JP2010206177A (ja) * | 2009-02-06 | 2010-09-16 | Toshiba Corp | 露光用マスク及びその製造方法並びに半導体装置の製造方法 |
| CN101833235B (zh) * | 2009-03-13 | 2012-11-14 | 中芯国际集成电路制造(上海)有限公司 | 掩模版原片的质量检测系统和方法 |
| JP2010219445A (ja) * | 2009-03-18 | 2010-09-30 | Nuflare Technology Inc | 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置 |
-
2011
- 2011-04-29 WO PCT/EP2011/056869 patent/WO2011151116A1/en not_active Ceased
- 2011-04-29 JP JP2013512805A patent/JP5719019B2/ja active Active
- 2011-04-29 US US13/701,286 patent/US9431212B2/en active Active
- 2011-06-03 TW TW100119555A patent/TWI529386B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011151116A1 (en) | 2011-12-08 |
| TW201221943A (en) | 2012-06-01 |
| US9431212B2 (en) | 2016-08-30 |
| JP2013532307A (ja) | 2013-08-15 |
| JP5719019B2 (ja) | 2015-05-13 |
| US20130126728A1 (en) | 2013-05-23 |
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