JP2013524549A5 - - Google Patents

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Publication number
JP2013524549A5
JP2013524549A5 JP2013504927A JP2013504927A JP2013524549A5 JP 2013524549 A5 JP2013524549 A5 JP 2013524549A5 JP 2013504927 A JP2013504927 A JP 2013504927A JP 2013504927 A JP2013504927 A JP 2013504927A JP 2013524549 A5 JP2013524549 A5 JP 2013524549A5
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JP
Japan
Prior art keywords
sublayer
solar cell
passivation
interface
bulk
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Pending
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JP2013504927A
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English (en)
Japanese (ja)
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JP2013524549A (ja
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Priority claimed from PCT/US2011/030782 external-priority patent/WO2011130017A2/en
Publication of JP2013524549A publication Critical patent/JP2013524549A/ja
Publication of JP2013524549A5 publication Critical patent/JP2013524549A5/ja
Pending legal-status Critical Current

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JP2013504927A 2010-04-13 2011-03-31 結晶性太陽電池上の機能的および光学的グレーデッドＡＲＣ層のための多層ＳｉＮ Pending JP2013524549A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32375510P 2010-04-13 2010-04-13
US61/323,755 2010-04-13
PCT/US2011/030782 WO2011130017A2 (en) 2010-04-13 2011-03-31 Multi-layer sin for functional and optical graded arc layers on crystalline solar cells

Publications (2)

Publication Number Publication Date
JP2013524549A JP2013524549A (ja) 2013-06-17
JP2013524549A5 true JP2013524549A5 (enExample) 2014-05-15

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ID=44799245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013504927A Pending JP2013524549A (ja) 2010-04-13 2011-03-31 結晶性太陽電池上の機能的および光学的グレーデッドＡＲＣ層のための多層ＳｉＮ

Country Status (5)

Country Link
US (1) US20110272024A1 (enExample)
JP (1) JP2013524549A (enExample)
CN (1) CN102870236A (enExample)
DE (1) DE112011101329T5 (enExample)
WO (1) WO2011130017A2 (enExample)

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US20140174532A1 (en) * 2012-12-21 2014-06-26 Michael P. Stewart Optimized anti-reflection coating layer for crystalline silicon solar cells
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CN103746005B (zh) * 2014-01-17 2016-08-17 宁波富星太阳能有限公司 双层氮化硅减反射膜
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CN104091839B (zh) * 2014-07-21 2016-09-07 内蒙古日月太阳能科技有限责任公司 一种用于太阳能电池片的减反射膜的制造方法
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
CN107958862B (zh) * 2016-10-18 2021-11-09 台湾积体电路制造股份有限公司 半导体用治具、半导体的保护层针孔测试用的治具及方法
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KR102578078B1 (ko) * 2017-04-27 2023-09-12 어플라이드 머티어리얼스, 인코포레이티드 3d 낸드 적용을 위한 낮은 유전율의 산화물 및 낮은 저항의 op 스택
CN107275190B (zh) * 2017-06-30 2021-01-01 韩华新能源（启东）有限公司 一种在半导体衬底上制备双层氮化硅薄膜的方法
JP7076971B2 (ja) * 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器
CN111492492A (zh) * 2017-11-30 2020-08-04 京瓷株式会社 太阳能电池元件
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KR20220000421A (ko) * 2019-05-24 2022-01-03 램 리써치 코포레이션 광학 프로브들 (optical probes) 을 포함하는 전기화학적 증착 시스템
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US11075308B1 (en) 2020-06-19 2021-07-27 Pharos Materials, Inc. Vanadium-containing electrodes and interconnects to transparent conductors
CN112760614B (zh) * 2020-12-09 2023-02-28 晋能清洁能源科技股份公司 一种多晶pecvd镀膜均匀性优化的方法
CN115838915B (zh) * 2022-11-24 2025-07-08 普乐新能源科技(泰兴)有限公司 一种单晶硅电池pecvd镀膜工艺
CN118039745B (zh) * 2024-04-11 2025-04-08 福建金石能源有限公司 一种背接触电池的制作方法

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