JP2011061017A5 - - Google Patents

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Publication number
JP2011061017A5
JP2011061017A5 JP2009209293A JP2009209293A JP2011061017A5 JP 2011061017 A5 JP2011061017 A5 JP 2011061017A5 JP 2009209293 A JP2009209293 A JP 2009209293A JP 2009209293 A JP2009209293 A JP 2009209293A JP 2011061017 A5 JP2011061017 A5 JP 2011061017A5
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JP
Japan
Prior art keywords
partial pressure
transparent electrode
electrode layer
gas partial
side transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009209293A
Other languages
English (en)
Japanese (ja)
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JP2011061017A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009209293A priority Critical patent/JP2011061017A/ja
Priority claimed from JP2009209293A external-priority patent/JP2011061017A/ja
Priority to CN2010800185065A priority patent/CN102414842A/zh
Priority to EP10815196A priority patent/EP2477233A1/en
Priority to PCT/JP2010/060599 priority patent/WO2011030598A1/ja
Priority to US13/264,277 priority patent/US20120040494A1/en
Publication of JP2011061017A publication Critical patent/JP2011061017A/ja
Publication of JP2011061017A5 publication Critical patent/JP2011061017A5/ja
Pending legal-status Critical Current

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JP2009209293A 2009-09-10 2009-09-10 光電変換装置の製造方法 Pending JP2011061017A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009209293A JP2011061017A (ja) 2009-09-10 2009-09-10 光電変換装置の製造方法
CN2010800185065A CN102414842A (zh) 2009-09-10 2010-06-23 光电转换装置的制造方法
EP10815196A EP2477233A1 (en) 2009-09-10 2010-06-23 Production method for photovoltaic device
PCT/JP2010/060599 WO2011030598A1 (ja) 2009-09-10 2010-06-23 光電変換装置の製造方法
US13/264,277 US20120040494A1 (en) 2009-09-10 2010-06-23 Process for producing photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009209293A JP2011061017A (ja) 2009-09-10 2009-09-10 光電変換装置の製造方法

Publications (2)

Publication Number Publication Date
JP2011061017A JP2011061017A (ja) 2011-03-24
JP2011061017A5 true JP2011061017A5 (enExample) 2011-11-24

Family

ID=43732275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009209293A Pending JP2011061017A (ja) 2009-09-10 2009-09-10 光電変換装置の製造方法

Country Status (5)

Country Link
US (1) US20120040494A1 (enExample)
EP (1) EP2477233A1 (enExample)
JP (1) JP2011061017A (enExample)
CN (1) CN102414842A (enExample)
WO (1) WO2011030598A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140203322A1 (en) * 2013-01-23 2014-07-24 Epistar Corporation Transparent Conductive Structure, Device comprising the same, and the Manufacturing Method thereof
JP6611701B2 (ja) * 2013-03-15 2019-11-27 アーケマ・インコーポレイテッド 窒素含有透明導電性酸化物キャップ層組成物
US9818903B2 (en) * 2014-04-30 2017-11-14 Sunpower Corporation Bonds for solar cell metallization
US9577045B2 (en) 2014-08-04 2017-02-21 Fairchild Semiconductor Corporation Silicon carbide power bipolar devices with deep acceptor doping

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2908617B2 (ja) 1991-09-24 1999-06-21 キヤノン株式会社 太陽電池
US20050056863A1 (en) * 2003-09-17 2005-03-17 Matsushita Electric Industrial Co., Ltd. Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell
US20100155738A1 (en) * 2005-02-22 2010-06-24 Hiroyuki Nabeta Light Emitting Diode and Method for Manufacturing Same
JP2007258537A (ja) * 2006-03-24 2007-10-04 Mitsubishi Heavy Ind Ltd 光電変換装置及びその製造方法
JP4537434B2 (ja) * 2007-08-31 2010-09-01 株式会社日立製作所 酸化亜鉛薄膜、及びそれを用いた透明導電膜、及び表示素子
JP5030745B2 (ja) * 2007-11-29 2012-09-19 三菱重工業株式会社 光電変換装置の製造方法

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