JP6150646B2 - 透明伝導性酸化物薄膜基板、その製造方法及びこれを含む有機電界発光素子および光電池 - Google Patents
透明伝導性酸化物薄膜基板、その製造方法及びこれを含む有機電界発光素子および光電池 Download PDFInfo
- Publication number
- JP6150646B2 JP6150646B2 JP2013151604A JP2013151604A JP6150646B2 JP 6150646 B2 JP6150646 B2 JP 6150646B2 JP 2013151604 A JP2013151604 A JP 2013151604A JP 2013151604 A JP2013151604 A JP 2013151604A JP 6150646 B2 JP6150646 B2 JP 6150646B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- transparent conductive
- conductive oxide
- oxide thin
- dopant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 205
- 239000000758 substrate Substances 0.000 title claims description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000002019 doping agent Substances 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 26
- 230000003746 surface roughness Effects 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 238000000605 extraction Methods 0.000 claims description 9
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000011787 zinc oxide Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000006059 cover glass Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Description
110:基板
120:第1透明伝導性酸化物薄膜
130:第2透明伝導性酸化物薄膜
Claims (14)
- 基板と、
前記基板に形成され、第1ドーパントがドーピングされている第1透明伝導性酸化物薄膜と、
前記第1透明伝導性酸化物薄膜に形成され、第2ドーパントが前記第1ドーパントのドーピング濃度よりも相対的に高くドーピングされて、前記第1透明伝導性酸化物薄膜よりも表面が相対的に平坦な第2透明伝導性酸化物薄膜と
を含み、
前記第1ドーパントの含量比は、4.5〜7.0wt%であり、前記第2ドーパントの含量比は、7.5〜9.5wt%であることを特徴とする透明伝導性酸化物薄膜基板。 - 前記第1および第2透明伝導性酸化物薄膜の平均表面粗度(RMS)は、5nm以下であることを特徴とする、請求項1に記載の透明伝導性酸化物薄膜基板。
- 面抵抗が15Ω/□以下であることを特徴とする、請求項1に記載の透明伝導性酸化物薄膜基板。
- 前記第1ドーパントおよび前記第2ドーパントは、Al、Ga、B、InおよびFのいずれか一つまたは二つ以上の組合せであることを特徴とする、請求項1に記載の透明伝導性酸化物薄膜基板。
- 前記第1ドーパントおよび前記第2ドーパントは、同一または異なる物質からなるものであることを特徴とする、請求項1に記載の透明伝導性酸化物薄膜基板。
- 前記第1透明伝導性酸化物薄膜および前記第2透明伝導性酸化物薄膜は、In2O3、ZnOおよびSnO2のいずれか一つを含むことを特徴とする、請求項1に記載の透明伝導性酸化物薄膜基板。
- 前記第1透明伝導性酸化物薄膜および前記第2透明伝導性酸化物薄膜は、同一または異なる物質からなるものであることを特徴とする、請求項1に記載の透明伝導性酸化物薄膜基板。
- 前記第1透明伝導性酸化物薄膜および前記第2透明伝導性酸化物薄膜の厚みの合計は、150〜250nmであることを特徴とする、請求項1に記載の透明伝導性酸化物薄膜基板。
- 前記基板と前記第1透明伝導性酸化物薄膜の間に形成される内部光抽出層をさらに含むことを特徴とする、請求項1に記載の透明伝導性酸化物薄膜基板。
- 前記第1透明伝導性酸化物薄膜が形成されている前記基板の一面と対応する他面に形成される外部光抽出層をさらに含むことを特徴とする、請求項1に記載の透明伝導性酸化物薄膜基板。
- 基板に第1透明伝導性酸化物薄膜を蒸着させ、前記第1透明伝導性酸化物薄膜に第1ドーパントをドーピングさせる第1ステップと、
前記第1透明伝導性酸化物薄膜に第2透明伝導性酸化物薄膜を蒸着させ、前記第1ドーパントのドーピング濃度よりも高いドーピング濃度で第2ドーパントを前記第2透明伝導性酸化物薄膜にドーピングさせる第2ステップと
を含み、
前記第1ドーパントの含量比は、4.5〜7.0wt%であり、前記第2ドーパントの含量比は、7.5〜9.5wt%であることを特徴とする透明伝導性酸化物薄膜基板の製造方法。 - 前記第1ステップおよび前記第2ステップにおいては、化学気相蒸着を通じて、前記第1透明伝導性酸化物薄膜に、前記第2透明伝導性酸化物薄膜をイン‐サイチュ(in‐situ)工程により蒸着させることを特徴とする、請求項11に記載の透明伝導性酸化物薄膜基板の製造方法。
- 請求項1に記載の透明伝導性酸化物薄膜基板をアノード基板として具備することを特徴とする有機電界発光素子。
- 請求項1に記載の透明伝導性酸化物薄膜基板を透明電極基板として具備することを特徴とする光電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120082293A KR101293647B1 (ko) | 2012-07-27 | 2012-07-27 | 투명 전도성 산화물 박막 기판, 그 제조방법, 이를 포함하는 유기전계발광소자 및 광전지 |
KR10-2012-0082293 | 2012-07-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014026975A JP2014026975A (ja) | 2014-02-06 |
JP6150646B2 true JP6150646B2 (ja) | 2017-06-21 |
Family
ID=48803463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013151604A Expired - Fee Related JP6150646B2 (ja) | 2012-07-27 | 2013-07-22 | 透明伝導性酸化物薄膜基板、その製造方法及びこれを含む有機電界発光素子および光電池 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140026952A1 (ja) |
EP (1) | EP2690683B1 (ja) |
JP (1) | JP6150646B2 (ja) |
KR (1) | KR101293647B1 (ja) |
CN (1) | CN103579524B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8933445B2 (en) * | 2011-12-26 | 2015-01-13 | Research & Business Foundation Sungkyunkwan University | Functional thin film for touch screen and method for forming the same |
KR102085924B1 (ko) * | 2013-09-17 | 2020-03-06 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
WO2015118724A1 (ja) * | 2014-02-07 | 2015-08-13 | リンテック株式会社 | 透明導電性積層体、透明導電性積層体の製造方法、および透明導電性積層体を用いてなる電子デバイス |
JP6295693B2 (ja) * | 2014-02-07 | 2018-03-20 | ソニー株式会社 | 撮像装置 |
US20150228815A1 (en) * | 2014-02-12 | 2015-08-13 | Tsmc Solar Ltd. | High efficiency solar cells with micro lenses and method for forming the same |
US9923165B2 (en) * | 2014-08-21 | 2018-03-20 | Konica Minolta, Inc. | Transparent electrode, method for producing transparent electrode and electronic device |
KR101650541B1 (ko) * | 2014-09-23 | 2016-08-23 | 코닝정밀소재 주식회사 | 플렉서블 기판 및 그 제조방법 |
US9985802B2 (en) * | 2014-10-31 | 2018-05-29 | Qualcomm Incorporated | Channel estimation enhancements |
KR101823358B1 (ko) * | 2015-10-28 | 2018-01-31 | 덕산하이메탈(주) | 투광성 기판의 제조방법 및 이를 통해 제조된 투광성 기판 |
KR101862760B1 (ko) * | 2015-10-28 | 2018-05-31 | 덕산하이메탈(주) | 투광성 기판의 제조방법 및 이를 통해 제조된 투광성 기판 |
CN105789450B (zh) * | 2016-01-29 | 2017-12-12 | 杭州众能光电科技有限公司 | 一种大面积均质有机‑无机钙钛矿薄膜的制备方法及其制品和应用 |
CN107482130B (zh) * | 2017-08-02 | 2020-05-26 | 京东方科技集团股份有限公司 | 有机发光面板及其制作方法、有机发光装置 |
US20200381643A1 (en) * | 2018-03-23 | 2020-12-03 | Sumitomo Chemical Company, Limited | Photoelectric conversion element |
US11362073B2 (en) * | 2019-02-08 | 2022-06-14 | Seoul Viosys Co., Ltd. | Light emitting device including multiple transparent electrodes for display and display apparatus having the same |
US11211528B2 (en) * | 2019-03-13 | 2021-12-28 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
KR102364813B1 (ko) * | 2020-03-09 | 2022-02-17 | 성균관대학교산학협력단 | 투명 유연성 박막 및 이의 제조 방법 |
KR102584916B1 (ko) * | 2020-06-30 | 2023-10-05 | 파나소닉 아이피 매니지먼트 가부시키가이샤 | 적층막 구조 및 적층막 구조의 제조 방법 |
CN113224182A (zh) * | 2021-05-28 | 2021-08-06 | 中威新能源(成都)有限公司 | 一种异质结太阳电池及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2538300B2 (ja) | 1988-02-10 | 1996-09-25 | 三洋電機株式会社 | 光電変換装置 |
FR2832706B1 (fr) * | 2001-11-28 | 2004-07-23 | Saint Gobain | Substrat transparent muni d'une electrode |
KR100844004B1 (ko) * | 2002-03-15 | 2008-07-04 | 엘지디스플레이 주식회사 | 유기전계발광 소자용 투명 도전막의 제조 방법 |
FR2844136B1 (fr) * | 2002-09-03 | 2006-07-28 | Corning Inc | Materiau utilisable dans la fabrication de dispositifs d'affichage lumineux en particulier de diodes electroluminescentes organiques |
WO2007058118A1 (ja) * | 2005-11-17 | 2007-05-24 | Asahi Glass Company, Limited | 太陽電池用透明導電性基板およびその製造方法 |
JP2008192604A (ja) * | 2007-01-12 | 2008-08-21 | Sumitomo Chemical Co Ltd | 透明導電膜用材料 |
KR101057571B1 (ko) | 2007-02-26 | 2011-08-17 | 가부시키가이샤 무라타 세이사쿠쇼 | 도전막 및 도전막의 제조방법 |
JP4928337B2 (ja) * | 2007-04-26 | 2012-05-09 | 株式会社カネカ | 光電変換装置の製造方法 |
JP5099893B2 (ja) * | 2007-10-22 | 2012-12-19 | 日東電工株式会社 | 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル |
FR2925981B1 (fr) * | 2007-12-27 | 2010-02-19 | Saint Gobain | Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant. |
US20100132783A1 (en) * | 2008-12-02 | 2010-06-03 | Applied Materials, Inc. | Transparent conductive film with high surface roughness formed by a reactive sputter deposition |
CN101567396A (zh) * | 2009-05-27 | 2009-10-28 | 中国南玻集团股份有限公司 | 用于太阳能电池的透明导电基板 |
KR101059458B1 (ko) * | 2010-02-19 | 2011-08-25 | 삼성코닝정밀소재 주식회사 | 태양전지 기판 및 그를 포함하는 태양전지 |
WO2011127318A2 (en) * | 2010-04-07 | 2011-10-13 | Applied Materials, Inc. | Use of al barrier layer to produce high haze zno films on glass substrates |
US20130087200A1 (en) * | 2010-06-17 | 2013-04-11 | University Of Florida Research Foundation, Inc. | Enhanced thin film solar cell performance using textured rear reflectors |
JP2013542317A (ja) * | 2010-09-03 | 2013-11-21 | テーエーエル・ソーラー・アーゲー | 太陽電池を製造するための基板をコーティングする方法 |
US8808882B2 (en) * | 2010-09-17 | 2014-08-19 | Guardian Industries Corp. | Coated article having boron doped zinc oxide based seed layer with enhanced durability under functional layer and method of making the same |
-
2012
- 2012-07-27 KR KR1020120082293A patent/KR101293647B1/ko active IP Right Grant
-
2013
- 2013-07-22 EP EP13177479.6A patent/EP2690683B1/en active Active
- 2013-07-22 JP JP2013151604A patent/JP6150646B2/ja not_active Expired - Fee Related
- 2013-07-27 US US13/952,580 patent/US20140026952A1/en not_active Abandoned
- 2013-07-29 CN CN201310322392.9A patent/CN103579524B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20140026952A1 (en) | 2014-01-30 |
JP2014026975A (ja) | 2014-02-06 |
CN103579524A (zh) | 2014-02-12 |
CN103579524B (zh) | 2016-08-10 |
EP2690683A2 (en) | 2014-01-29 |
EP2690683A3 (en) | 2014-03-12 |
KR101293647B1 (ko) | 2013-08-13 |
EP2690683B1 (en) | 2019-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6150646B2 (ja) | 透明伝導性酸化物薄膜基板、その製造方法及びこれを含む有機電界発光素子および光電池 | |
TWI514925B (zh) | 有機發光裝置 | |
WO2010021106A1 (ja) | 半導体装置、半導体装置の製造方法、トランジスタ基板、発光装置、および、表示装置 | |
US9082903B2 (en) | Photovoltaic device with a zinc magnesium oxide window layer | |
US9960373B2 (en) | Substrate for photoelectric device and photoelectric device comprising same | |
TWI503050B (zh) | 用於透光裝置的導電結構 | |
JP2006516793A (ja) | 発光表示デバイスの作成に使用するための部材 | |
US20060202614A1 (en) | Organic electroluminescent devices and display device employing the same | |
JP6384003B2 (ja) | 金属酸化物薄膜基板、その製造方法、これを含む光電池及び有機発光素子 | |
CN106068247B (zh) | 涂覆的窗玻璃 | |
US20120037225A1 (en) | Solar cell and method of fabricating the same | |
US10991841B2 (en) | Perovskite solar cell and tandem solar cell | |
KR101973207B1 (ko) | 금속 산화물이 함유된 양극 및 상기 양극을 포함하는 유기발광소자 | |
KR102372238B1 (ko) | 일체형 탠덤 태양전지 및 그 제조방법 | |
US20120103407A1 (en) | Solar cell and method for manufacturing the solar cell | |
KR20110107447A (ko) | 플렉서블 유기 발광 다이오드 및 그 제조 방법 | |
Qian et al. | A stacked Al/Ag anode for short circuit protection in ITO free top-emitting organic light-emitting diodes | |
CN104471738A (zh) | 用于oled的透明的所支撑电极 | |
KR20210099964A (ko) | 양면 수광형 태양전지의 제조방법 및 이를 통해 제조한 양면 수광형 태양전지 | |
KR20140140187A (ko) | 산화아연계 스퍼터링 타겟 및 이를 통해 증착된 보호층을 갖는 광전지 | |
KR20110047827A (ko) | 실리콘 이종접합 태양전지 및 그 제조 방법 | |
JP5285331B2 (ja) | 薄膜光電変換装置 | |
CN117238979A (zh) | 异质结太阳能电池及其制作方法、光伏组件及光伏系统 | |
KR20150066037A (ko) | 산화아연계 스퍼터링 타겟, 이를 통해 증착된 투명전극을 갖는 유기발광소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150721 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20150721 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160614 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160621 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160908 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170330 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170509 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170523 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6150646 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |