JP2013524012A5 - - Google Patents

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Publication number
JP2013524012A5
JP2013524012A5 JP2013502704A JP2013502704A JP2013524012A5 JP 2013524012 A5 JP2013524012 A5 JP 2013524012A5 JP 2013502704 A JP2013502704 A JP 2013502704A JP 2013502704 A JP2013502704 A JP 2013502704A JP 2013524012 A5 JP2013524012 A5 JP 2013524012A5
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JP
Japan
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slot
coupled
energy
feed
ground
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JP2013502704A
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English (en)
Japanese (ja)
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JP2013524012A (ja
JP5722428B2 (ja
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Priority claimed from US13/048,440 external-priority patent/US8795488B2/en
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JP2013502704A 2010-03-31 2011-03-28 Ｒｆエネルギが中心に給送される物理蒸着のための装置 Active JP5722428B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US31937710P 2010-03-31 2010-03-31
US61/319,377 2010-03-31
US32872510P 2010-04-28 2010-04-28
US61/328,725 2010-04-28
US37177410P 2010-08-09 2010-08-09
US61/371,774 2010-08-09
US39330910P 2010-10-14 2010-10-14
US61/393,309 2010-10-14
US13/048,440 US8795488B2 (en) 2010-03-31 2011-03-15 Apparatus for physical vapor deposition having centrally fed RF energy
US13/048,440 2011-03-15
PCT/US2011/030226 WO2011123399A2 (en) 2010-03-31 2011-03-28 Apparatus for physical vapor deposition having centrally fed rf energy

Publications (3)

Publication Number Publication Date
JP2013524012A JP2013524012A (ja) 2013-06-17
JP2013524012A5 true JP2013524012A5 (cg-RX-API-DMAC7.html) 2014-05-15
JP5722428B2 JP5722428B2 (ja) 2015-05-20

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ID=44708340

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JP2013502704A Active JP5722428B2 (ja) 2010-03-31 2011-03-28 Ｒｆエネルギが中心に給送される物理蒸着のための装置

Country Status (6)

Country Link
US (1) US8795488B2 (cg-RX-API-DMAC7.html)
JP (1) JP5722428B2 (cg-RX-API-DMAC7.html)
KR (1) KR101801760B1 (cg-RX-API-DMAC7.html)
CN (1) CN102859029B (cg-RX-API-DMAC7.html)
TW (1) TWI521081B (cg-RX-API-DMAC7.html)
WO (1) WO2011123399A2 (cg-RX-API-DMAC7.html)

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US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
KR102585074B1 (ko) 2017-11-11 2023-10-04 마이크로머티어리얼즈 엘엘씨 고압 프로세싱 챔버를 위한 가스 전달 시스템
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
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WO2019099870A1 (en) * 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Synchronized pulsing of plasma processing source and substrate bias
KR20250153883A (ko) 2017-11-17 2025-10-27 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
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US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
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