JP2013518370A - プラズマチャンバのためのプロセス条件検知デバイス - Google Patents

プラズマチャンバのためのプロセス条件検知デバイス Download PDF

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Publication number
JP2013518370A
JP2013518370A JP2012550028A JP2012550028A JP2013518370A JP 2013518370 A JP2013518370 A JP 2013518370A JP 2012550028 A JP2012550028 A JP 2012550028A JP 2012550028 A JP2012550028 A JP 2012550028A JP 2013518370 A JP2013518370 A JP 2013518370A
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substrate
plasma
electronics
layer
sensing device
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JP2012550028A
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Japanese (ja)
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JP2013518370A5 (https=
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アール ジェンセン
メイ サン
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KLA Corp
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KLA Corp
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Publication of JP2013518370A5 publication Critical patent/JP2013518370A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954—Electron temperature measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
JP2012550028A 2010-01-21 2011-01-11 プラズマチャンバのためのプロセス条件検知デバイス Pending JP2013518370A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/691,695 US8889021B2 (en) 2010-01-21 2010-01-21 Process condition sensing device and method for plasma chamber
US12/691,695 2010-01-21
PCT/US2011/020872 WO2011090850A2 (en) 2010-01-21 2011-01-11 Process condition sensing device for plasma chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016201451A Division JP6316898B2 (ja) 2010-01-21 2016-10-13 プラズマチャンバのためのプロセス条件検知デバイス及び方法

Publications (2)

Publication Number Publication Date
JP2013518370A true JP2013518370A (ja) 2013-05-20
JP2013518370A5 JP2013518370A5 (https=) 2014-02-27

Family

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Family Applications (2)

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JP2012550028A Pending JP2013518370A (ja) 2010-01-21 2011-01-11 プラズマチャンバのためのプロセス条件検知デバイス
JP2016201451A Active JP6316898B2 (ja) 2010-01-21 2016-10-13 プラズマチャンバのためのプロセス条件検知デバイス及び方法

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JP2016201451A Active JP6316898B2 (ja) 2010-01-21 2016-10-13 プラズマチャンバのためのプロセス条件検知デバイス及び方法

Country Status (7)

Country Link
US (3) US8889021B2 (https=)
EP (1) EP2526743B1 (https=)
JP (2) JP2013518370A (https=)
KR (1) KR101764940B1 (https=)
CN (1) CN102771194B (https=)
TW (1) TWI612852B (https=)
WO (1) WO2011090850A2 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017111073A (ja) * 2015-12-18 2017-06-22 株式会社ディスコ 静電気検出装置
KR20180100072A (ko) * 2016-01-28 2018-09-06 어플라이드 머티어리얼스, 인코포레이티드 자기-인식 생산 웨이퍼들
KR20180100071A (ko) * 2016-01-28 2018-09-06 어플라이드 머티어리얼스, 인코포레이티드 실시간 프로세스 특성화
JP2019516230A (ja) * 2016-05-10 2019-06-13 譜光儀器股▲ふん▼有限公司Ａｃｒｏｍａｓｓ Ｔｅｃｈｎｏｌｏｇｉｅｓ，Ｉｎｃ． 荷電粒子を検出するためのデバイス及び、それを組み込んだ質量分析用の装置
CN114167481A (zh) * 2020-09-10 2022-03-11 安平丹斯有限责任公司 等离子体处理的离子能量分析装置
JP2023128957A (ja) * 2022-03-04 2023-09-14 パナソニックＩｐマネジメント株式会社 プラズマ電位センサ
JP2024530014A (ja) * 2021-08-05 2024-08-14 アプライド マテリアルズ インコーポレイテッド プラズマ診断のためのマイクロ波共振器アレイ
WO2025100280A1 (ja) * 2023-11-09 2025-05-15 東京エレクトロン株式会社 プラズマ評価システム及びプラズマ評価方法

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8889021B2 (en) 2010-01-21 2014-11-18 Kla-Tencor Corporation Process condition sensing device and method for plasma chamber
US9304160B1 (en) 2012-05-08 2016-04-05 Kla-Tencor Corporation Defect inspection apparatus, system, and method
US9530617B2 (en) * 2013-01-30 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. In-situ charging neutralization
CN105358949B (zh) 2013-05-30 2018-03-02 科磊股份有限公司 用于测量热通量的方法及系统
US9420639B2 (en) * 2013-11-11 2016-08-16 Applied Materials, Inc. Smart device fabrication via precision patterning
US9620400B2 (en) 2013-12-21 2017-04-11 Kla-Tencor Corporation Position sensitive substrate device
US10969370B2 (en) * 2015-06-05 2021-04-06 Semilab Semiconductor Physics Laboratory Co., Ltd. Measuring semiconductor doping using constant surface potential corona charging
NL2017837A (en) 2015-11-25 2017-06-02 Asml Netherlands Bv A Measurement Substrate and a Measurement Method
US10460966B2 (en) * 2016-06-15 2019-10-29 Kla-Tencor Corporation Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US10083883B2 (en) * 2016-06-20 2018-09-25 Applied Materials, Inc. Wafer processing equipment having capacitive micro sensors
KR102111206B1 (ko) * 2017-09-05 2020-05-14 도쿄엘렉트론가부시키가이샤 플라즈마 프로브 장치 및 플라즈마 처리 장치
US12288673B2 (en) 2017-11-29 2025-04-29 COMET Technologies USA, Inc. Retuning for impedance matching network control
US20190242838A1 (en) * 2018-02-07 2019-08-08 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Non-Invasive Method for Probing Plasma Impedance
KR101999622B1 (ko) * 2018-03-30 2019-07-12 광운대학교 산학협력단 플라즈마 진단 시스템 및 방법
EP3562285A1 (de) * 2018-04-25 2019-10-30 Siemens Aktiengesellschaft Verbinden elektrischer bauelemente
KR102026733B1 (ko) * 2018-05-11 2019-09-30 엘지전자 주식회사 플라즈마 공정 측정 센서 및 그 제조 방법
WO2019221413A1 (ko) * 2018-05-15 2019-11-21 (주)에스엔텍 플라즈마 측정용 웨이퍼
KR102616493B1 (ko) * 2018-06-05 2023-12-21 엘지전자 주식회사 플라즈마 측정 방법 및 플라즈마 공정 측정 센서
US10916411B2 (en) 2018-08-13 2021-02-09 Tokyo Electron Limited Sensor-to-sensor matching methods for chamber matching
US11521872B2 (en) 2018-09-04 2022-12-06 Applied Materials, Inc. Method and apparatus for measuring erosion and calibrating position for a moving process kit
US10794681B2 (en) 2018-09-04 2020-10-06 Applied Materials, Inc. Long range capacitive gap measurement in a wafer form sensor system
US11404296B2 (en) * 2018-09-04 2022-08-02 Applied Materials, Inc. Method and apparatus for measuring placement of a substrate on a heater pedestal
US10847393B2 (en) 2018-09-04 2020-11-24 Applied Materials, Inc. Method and apparatus for measuring process kit centering
US11342210B2 (en) * 2018-09-04 2022-05-24 Applied Materials, Inc. Method and apparatus for measuring wafer movement and placement using vibration data
US11373890B2 (en) * 2018-12-17 2022-06-28 Applied Materials, Inc. Wireless in-situ real-time measurement of electrostatic chucking force in semiconductor wafer processing
WO2020214209A1 (en) 2019-04-19 2020-10-22 Applied Materials, Inc. In-situ metrology and process control
US11114279B2 (en) 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
US11527385B2 (en) 2021-04-29 2022-12-13 COMET Technologies USA, Inc. Systems and methods for calibrating capacitors of matching networks
US11596309B2 (en) 2019-07-09 2023-03-07 COMET Technologies USA, Inc. Hybrid matching network topology
KR102200662B1 (ko) * 2019-10-23 2021-01-12 충남대학교 산학협력단 비침습형 플라즈마 공정 진단 방법 및 장치
US11887820B2 (en) 2020-01-10 2024-01-30 COMET Technologies USA, Inc. Sector shunts for plasma-based wafer processing systems
US11670488B2 (en) 2020-01-10 2023-06-06 COMET Technologies USA, Inc. Fast arc detecting match network
US12027351B2 (en) * 2020-01-10 2024-07-02 COMET Technologies USA, Inc. Plasma non-uniformity detection
US20210217588A1 (en) * 2020-01-10 2021-07-15 COMET Technologies USA, Inc. Azimuthal sensor array for radio frequency plasma-based wafer processing systems
US11521832B2 (en) 2020-01-10 2022-12-06 COMET Technologies USA, Inc. Uniformity control for radio frequency plasma processing systems
US11830708B2 (en) 2020-01-10 2023-11-28 COMET Technologies USA, Inc. Inductive broad-band sensors for electromagnetic waves
US11961711B2 (en) 2020-01-20 2024-04-16 COMET Technologies USA, Inc. Radio frequency match network and generator
US11605527B2 (en) 2020-01-20 2023-03-14 COMET Technologies USA, Inc. Pulsing control match network
WO2021149842A1 (ko) * 2020-01-20 2021-07-29 (주)제이디 정전용량 방식의 상태 측정 장치
US11668601B2 (en) 2020-02-24 2023-06-06 Kla Corporation Instrumented substrate apparatus
KR102815024B1 (ko) * 2020-06-18 2025-05-30 주식회사 플라즈맵 임플란트 보관 용기의 제조방법 및 임플란트 보관 용기의 플라즈마 처리 방법
US12315710B2 (en) 2020-11-03 2025-05-27 Kwangwoon University Industry-Academic Collaboration Foundation Plasma diagnosis system and plasma diagnosis method
US12057296B2 (en) 2021-02-22 2024-08-06 COMET Technologies USA, Inc. Electromagnetic field sensing device
US12219685B2 (en) 2021-04-16 2025-02-04 Lockheed Martin Corporation Langmuir probe operating at fixed voltages
US11923175B2 (en) 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
EP4177928B1 (en) * 2021-11-09 2024-01-03 Impedans Ltd Two stage ion current measuring method in a device for analysis of plasma processes
US12243717B2 (en) 2022-04-04 2025-03-04 COMET Technologies USA, Inc. Variable reactance device having isolated gate drive power supplies
US12040139B2 (en) 2022-05-09 2024-07-16 COMET Technologies USA, Inc. Variable capacitor with linear impedance and high voltage breakdown
US11657980B1 (en) 2022-05-09 2023-05-23 COMET Technologies USA, Inc. Dielectric fluid variable capacitor
US12051549B2 (en) 2022-08-02 2024-07-30 COMET Technologies USA, Inc. Coaxial variable capacitor
KR20240022912A (ko) 2022-08-12 2024-02-20 삼성전자주식회사 반도체 설비 모니터링 장치, 및 그 모니터링 장치를 구비한 반도체 설비
CN115662867A (zh) * 2022-09-06 2023-01-31 拓荆科技股份有限公司 等离子体探测器及其制备方法
CN116344382A (zh) * 2022-09-06 2023-06-27 拓荆科技股份有限公司 工艺腔参数的探测装置及其加工方法与安装方法
US12132435B2 (en) 2022-10-27 2024-10-29 COMET Technologies USA, Inc. Method for repeatable stepper motor homing
EP4625471A3 (en) 2022-11-25 2025-12-31 Applied Materials, Inc. ARMORED APPARATUS FOR THE ANALYSIS OF THE IONIC ENERGY OF PLASMA PROCESSES
KR20240115067A (ko) * 2023-01-18 2024-07-25 삼성전자주식회사 플라즈마 진단 장치 및 그것의 동작 방법
KR20240162309A (ko) 2023-05-08 2024-11-15 삼성전자주식회사 센서 장치 및 이를 이용하는 반도체 공정 장치
US20250054789A1 (en) * 2023-08-07 2025-02-13 Kla Corporation Method of fabrication and implementation of process condition measurement device
US20250259831A1 (en) * 2024-02-08 2025-08-14 Applied Materials, Inc. Wireless measurement characterization

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040007326A1 (en) * 2002-07-12 2004-01-15 Roche Gregory A. Wafer probe for measuring plasma and surface characteristics in plasma processing enviroments
JP2004507889A (ja) * 2000-08-22 2004-03-11 オンウエハー　テクノロジーズ　インコーポレーテッド 処理操作をおこなうため、効率的に利用するため、監視するため、及び制御するために、データを獲得する方法及び、その装置
US20060043063A1 (en) * 2004-09-02 2006-03-02 Mahoney Leonard J Electrically floating diagnostic plasma probe with ion property sensors
JP2007502519A (ja) * 2003-08-14 2007-02-08 オンウェハー テクノロジーズ インコーポレイテッド プラズマプロセス環境におけるプラズマ特性測定用センサアレイ
JP2009535855A (ja) * 2006-05-01 2009-10-01 ケーエルエー−テンカー・コーポレーション シールドを備えるプロセス条件測定素子

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3122175B2 (ja) * 1991-08-05 2001-01-09 忠弘 大見 プラズマ処理装置
US5801386A (en) * 1995-12-11 1998-09-01 Applied Materials, Inc. Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same
GB9620151D0 (en) * 1996-09-27 1996-11-13 Surface Tech Sys Ltd Plasma processing apparatus
US6326794B1 (en) * 1999-01-14 2001-12-04 International Business Machines Corporation Method and apparatus for in-situ monitoring of ion energy distribution for endpoint detection via capacitance measurement
US6159864A (en) * 1999-02-24 2000-12-12 United Microelectronics Corp. Method of preventing damages of gate oxides of a semiconductor wafer in a plasma-related process
US6827584B2 (en) 1999-12-28 2004-12-07 Formfactor, Inc. Interconnect for microelectronic structures with enhanced spring characteristics
JP3698991B2 (ja) * 2000-02-16 2005-09-21 株式会社日立製作所 プラズマ電位差、電流測定装置及びそれを用いた試料の処理方法
DE10032579B4 (de) * 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
US7960670B2 (en) * 2005-05-03 2011-06-14 Kla-Tencor Corporation Methods of and apparatuses for measuring electrical parameters of a plasma process
JP4175456B2 (ja) * 2002-03-26 2008-11-05 株式会社 東北テクノアーチ オンウエハ・モニタリング・システム
US20030197175A1 (en) * 2002-04-17 2003-10-23 Chong-Jen Huang Test structure for evaluating antenna effects
CN1157103C (zh) 2002-04-19 2004-07-07 大连理工大学 用于等离子体诊断的复合探针
JP3773189B2 (ja) 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
US20040028837A1 (en) * 2002-06-28 2004-02-12 Tokyo Electron Limited Method and apparatus for plasma processing
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US7151366B2 (en) * 2002-12-03 2006-12-19 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
US7135852B2 (en) * 2002-12-03 2006-11-14 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
US6939726B2 (en) * 2003-08-04 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Via array monitor and method of monitoring induced electrical charging
KR100663277B1 (ko) * 2004-12-20 2007-01-02 삼성전자주식회사 휴대단말기의 시스템 관련 이벤트 처리 장치 및 방법
US20060171848A1 (en) * 2005-01-31 2006-08-03 Advanced Energy Industries, Inc. Diagnostic plasma sensors for endpoint and end-of-life detection
US7449414B2 (en) * 2006-08-07 2008-11-11 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
JP4838197B2 (ja) * 2007-06-05 2011-12-14 東京エレクトロン株式会社 プラズマ処理装置，電極温度調整装置，電極温度調整方法
JP5407019B2 (ja) * 2007-08-31 2014-02-05 ラピスセミコンダクタ株式会社 プラズマモニタリング方法
JP2009252799A (ja) 2008-04-01 2009-10-29 Nitto Denko Corp 半導体装置の製造方法
US8547085B2 (en) * 2008-07-07 2013-10-01 Lam Research Corporation Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber
US8889021B2 (en) 2010-01-21 2014-11-18 Kla-Tencor Corporation Process condition sensing device and method for plasma chamber

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004507889A (ja) * 2000-08-22 2004-03-11 オンウエハー　テクノロジーズ　インコーポレーテッド 処理操作をおこなうため、効率的に利用するため、監視するため、及び制御するために、データを獲得する方法及び、その装置
US20040007326A1 (en) * 2002-07-12 2004-01-15 Roche Gregory A. Wafer probe for measuring plasma and surface characteristics in plasma processing enviroments
JP2007502519A (ja) * 2003-08-14 2007-02-08 オンウェハー テクノロジーズ インコーポレイテッド プラズマプロセス環境におけるプラズマ特性測定用センサアレイ
US20060043063A1 (en) * 2004-09-02 2006-03-02 Mahoney Leonard J Electrically floating diagnostic plasma probe with ion property sensors
JP2009535855A (ja) * 2006-05-01 2009-10-01 ケーエルエー−テンカー・コーポレーション シールドを備えるプロセス条件測定素子

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017111073A (ja) * 2015-12-18 2017-06-22 株式会社ディスコ 静電気検出装置
KR102660879B1 (ko) * 2016-01-28 2024-04-24 어플라이드 머티어리얼스, 인코포레이티드 실시간 프로세스 특성화
KR20180100071A (ko) * 2016-01-28 2018-09-06 어플라이드 머티어리얼스, 인코포레이티드 실시간 프로세스 특성화
CN108604556A (zh) * 2016-01-28 2018-09-28 应用材料公司 实时工艺特性分析
JP2019508888A (ja) * 2016-01-28 2019-03-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ リアルタイムのプロセス評価
US11735486B2 (en) 2016-01-28 2023-08-22 Applied Materials, Inc. Process monitor device having a plurality of sensors arranged in concentric circles
KR20180100072A (ko) * 2016-01-28 2018-09-06 어플라이드 머티어리얼스, 인코포레이티드 자기-인식 생산 웨이퍼들
KR102655725B1 (ko) 2016-01-28 2024-04-05 어플라이드 머티어리얼스, 인코포레이티드 자기-인식 생산 웨이퍼들
JP2019516230A (ja) * 2016-05-10 2019-06-13 譜光儀器股▲ふん▼有限公司Ａｃｒｏｍａｓｓ Ｔｅｃｈｎｏｌｏｇｉｅｓ，Ｉｎｃ． 荷電粒子を検出するためのデバイス及び、それを組み込んだ質量分析用の装置
CN114167481A (zh) * 2020-09-10 2022-03-11 安平丹斯有限责任公司 等离子体处理的离子能量分析装置
JP2022046448A (ja) * 2020-09-10 2022-03-23 インペダンズ リミテッド プラズマプロセスのイオンエネルギー分析用の装置
JP2022046459A (ja) * 2020-09-10 2022-03-23 インペダンズ リミテッド プラズマプロセスのイオンエネルギー分析用の装置
JP7743276B2 (ja) 2020-09-10 2025-09-24 インペダンズ リミテッド プラズマプロセスのイオンエネルギー分析用の装置
JP7798510B2 (ja) 2020-09-10 2026-01-14 アプライド マテリアルズ インコーポレイテッド プラズマプロセスのイオンエネルギー分析用の装置
JP2024530014A (ja) * 2021-08-05 2024-08-14 アプライド マテリアルズ インコーポレイテッド プラズマ診断のためのマイクロ波共振器アレイ
JP7699291B2 (ja) 2021-08-05 2025-06-26 アプライド マテリアルズ インコーポレイテッド プラズマ診断のためのマイクロ波共振器アレイ
JP2023128957A (ja) * 2022-03-04 2023-09-14 パナソニックＩｐマネジメント株式会社 プラズマ電位センサ
JP7796332B2 (ja) 2022-03-04 2026-01-09 パナソニックＩｐマネジメント株式会社 プラズマ電位センサ
WO2025100280A1 (ja) * 2023-11-09 2025-05-15 東京エレクトロン株式会社 プラズマ評価システム及びプラズマ評価方法

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US20150020972A1 (en) 2015-01-22
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US8889021B2 (en) 2014-11-18
EP2526743A2 (en) 2012-11-28
WO2011090850A3 (en) 2011-11-17
US20180114681A1 (en) 2018-04-26
KR101764940B1 (ko) 2017-08-03
CN102771194B (zh) 2015-12-02
US10777393B2 (en) 2020-09-15
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TWI612852B (zh) 2018-01-21
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