TWI612852B - 用於電漿腔室之處理條件感測裝置及方法 - Google Patents

用於電漿腔室之處理條件感測裝置及方法 Download PDF

Info

Publication number
TWI612852B
TWI612852B TW099140860A TW99140860A TWI612852B TW I612852 B TWI612852 B TW I612852B TW 099140860 A TW099140860 A TW 099140860A TW 99140860 A TW99140860 A TW 99140860A TW I612852 B TWI612852 B TW I612852B
Authority
TW
Taiwan
Prior art keywords
substrate
layer
plasma
sensing device
sensor
Prior art date
Application number
TW099140860A
Other languages
English (en)
Chinese (zh)
Other versions
TW201143541A (en
Inventor
伊爾 珍森
玫 森
Original Assignee
克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 克萊譚克公司 filed Critical 克萊譚克公司
Publication of TW201143541A publication Critical patent/TW201143541A/zh
Application granted granted Critical
Publication of TWI612852B publication Critical patent/TWI612852B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954—Electron temperature measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
TW099140860A 2010-01-21 2010-11-25 用於電漿腔室之處理條件感測裝置及方法 TWI612852B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/691,695 US8889021B2 (en) 2010-01-21 2010-01-21 Process condition sensing device and method for plasma chamber
US12/691,695 2010-01-21

Publications (2)

Publication Number Publication Date
TW201143541A TW201143541A (en) 2011-12-01
TWI612852B true TWI612852B (zh) 2018-01-21

Family

ID=44276795

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099140860A TWI612852B (zh) 2010-01-21 2010-11-25 用於電漿腔室之處理條件感測裝置及方法

Country Status (7)

Country Link
US (3) US8889021B2 (https=)
EP (1) EP2526743B1 (https=)
JP (2) JP2013518370A (https=)
KR (1) KR101764940B1 (https=)
CN (1) CN102771194B (https=)
TW (1) TWI612852B (https=)
WO (1) WO2011090850A2 (https=)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8889021B2 (en) 2010-01-21 2014-11-18 Kla-Tencor Corporation Process condition sensing device and method for plasma chamber
US9304160B1 (en) 2012-05-08 2016-04-05 Kla-Tencor Corporation Defect inspection apparatus, system, and method
US9530617B2 (en) * 2013-01-30 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. In-situ charging neutralization
CN105358949B (zh) 2013-05-30 2018-03-02 科磊股份有限公司 用于测量热通量的方法及系统
US9420639B2 (en) * 2013-11-11 2016-08-16 Applied Materials, Inc. Smart device fabrication via precision patterning
US9620400B2 (en) 2013-12-21 2017-04-11 Kla-Tencor Corporation Position sensitive substrate device
US10969370B2 (en) * 2015-06-05 2021-04-06 Semilab Semiconductor Physics Laboratory Co., Ltd. Measuring semiconductor doping using constant surface potential corona charging
NL2017837A (en) 2015-11-25 2017-06-02 Asml Netherlands Bv A Measurement Substrate and a Measurement Method
JP6630142B2 (ja) * 2015-12-18 2020-01-15 株式会社ディスコ 静電気検出装置
US20170221783A1 (en) * 2016-01-28 2017-08-03 Leonard TEDESCHI Self-aware production wafers
US10818561B2 (en) * 2016-01-28 2020-10-27 Applied Materials, Inc. Process monitor device having a plurality of sensors arranged in concentric circles
US10984999B2 (en) 2016-05-10 2021-04-20 Acromass Technologies, Inc Device for detecting charged particles and an apparatus for mass spectrometry incorporating the same
US10460966B2 (en) * 2016-06-15 2019-10-29 Kla-Tencor Corporation Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US10083883B2 (en) * 2016-06-20 2018-09-25 Applied Materials, Inc. Wafer processing equipment having capacitive micro sensors
KR102111206B1 (ko) * 2017-09-05 2020-05-14 도쿄엘렉트론가부시키가이샤 플라즈마 프로브 장치 및 플라즈마 처리 장치
US12288673B2 (en) 2017-11-29 2025-04-29 COMET Technologies USA, Inc. Retuning for impedance matching network control
US20190242838A1 (en) * 2018-02-07 2019-08-08 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Non-Invasive Method for Probing Plasma Impedance
KR101999622B1 (ko) * 2018-03-30 2019-07-12 광운대학교 산학협력단 플라즈마 진단 시스템 및 방법
EP3562285A1 (de) * 2018-04-25 2019-10-30 Siemens Aktiengesellschaft Verbinden elektrischer bauelemente
KR102026733B1 (ko) * 2018-05-11 2019-09-30 엘지전자 주식회사 플라즈마 공정 측정 센서 및 그 제조 방법
WO2019221413A1 (ko) * 2018-05-15 2019-11-21 (주)에스엔텍 플라즈마 측정용 웨이퍼
KR102616493B1 (ko) * 2018-06-05 2023-12-21 엘지전자 주식회사 플라즈마 측정 방법 및 플라즈마 공정 측정 센서
US10916411B2 (en) 2018-08-13 2021-02-09 Tokyo Electron Limited Sensor-to-sensor matching methods for chamber matching
US11521872B2 (en) 2018-09-04 2022-12-06 Applied Materials, Inc. Method and apparatus for measuring erosion and calibrating position for a moving process kit
US10794681B2 (en) 2018-09-04 2020-10-06 Applied Materials, Inc. Long range capacitive gap measurement in a wafer form sensor system
US11404296B2 (en) * 2018-09-04 2022-08-02 Applied Materials, Inc. Method and apparatus for measuring placement of a substrate on a heater pedestal
US10847393B2 (en) 2018-09-04 2020-11-24 Applied Materials, Inc. Method and apparatus for measuring process kit centering
US11342210B2 (en) * 2018-09-04 2022-05-24 Applied Materials, Inc. Method and apparatus for measuring wafer movement and placement using vibration data
US11373890B2 (en) * 2018-12-17 2022-06-28 Applied Materials, Inc. Wireless in-situ real-time measurement of electrostatic chucking force in semiconductor wafer processing
WO2020214209A1 (en) 2019-04-19 2020-10-22 Applied Materials, Inc. In-situ metrology and process control
US11114279B2 (en) 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
US11527385B2 (en) 2021-04-29 2022-12-13 COMET Technologies USA, Inc. Systems and methods for calibrating capacitors of matching networks
US11596309B2 (en) 2019-07-09 2023-03-07 COMET Technologies USA, Inc. Hybrid matching network topology
KR102200662B1 (ko) * 2019-10-23 2021-01-12 충남대학교 산학협력단 비침습형 플라즈마 공정 진단 방법 및 장치
US11887820B2 (en) 2020-01-10 2024-01-30 COMET Technologies USA, Inc. Sector shunts for plasma-based wafer processing systems
US11670488B2 (en) 2020-01-10 2023-06-06 COMET Technologies USA, Inc. Fast arc detecting match network
US12027351B2 (en) * 2020-01-10 2024-07-02 COMET Technologies USA, Inc. Plasma non-uniformity detection
US20210217588A1 (en) * 2020-01-10 2021-07-15 COMET Technologies USA, Inc. Azimuthal sensor array for radio frequency plasma-based wafer processing systems
US11521832B2 (en) 2020-01-10 2022-12-06 COMET Technologies USA, Inc. Uniformity control for radio frequency plasma processing systems
US11830708B2 (en) 2020-01-10 2023-11-28 COMET Technologies USA, Inc. Inductive broad-band sensors for electromagnetic waves
US11961711B2 (en) 2020-01-20 2024-04-16 COMET Technologies USA, Inc. Radio frequency match network and generator
US11605527B2 (en) 2020-01-20 2023-03-14 COMET Technologies USA, Inc. Pulsing control match network
WO2021149842A1 (ko) * 2020-01-20 2021-07-29 (주)제이디 정전용량 방식의 상태 측정 장치
US11668601B2 (en) 2020-02-24 2023-06-06 Kla Corporation Instrumented substrate apparatus
KR102815024B1 (ko) * 2020-06-18 2025-05-30 주식회사 플라즈맵 임플란트 보관 용기의 제조방법 및 임플란트 보관 용기의 플라즈마 처리 방법
EP3968353A1 (en) * 2020-09-10 2022-03-16 Impedans Ltd Apparatus for ion energy analysis of plasma processes
US12315710B2 (en) 2020-11-03 2025-05-27 Kwangwoon University Industry-Academic Collaboration Foundation Plasma diagnosis system and plasma diagnosis method
US12057296B2 (en) 2021-02-22 2024-08-06 COMET Technologies USA, Inc. Electromagnetic field sensing device
US12219685B2 (en) 2021-04-16 2025-02-04 Lockheed Martin Corporation Langmuir probe operating at fixed voltages
US11923175B2 (en) 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
US12062529B2 (en) * 2021-08-05 2024-08-13 Applied Materials, Inc. Microwave resonator array for plasma diagnostics
EP4177928B1 (en) * 2021-11-09 2024-01-03 Impedans Ltd Two stage ion current measuring method in a device for analysis of plasma processes
JP7796332B2 (ja) * 2022-03-04 2026-01-09 パナソニックＩｐマネジメント株式会社 プラズマ電位センサ
US12243717B2 (en) 2022-04-04 2025-03-04 COMET Technologies USA, Inc. Variable reactance device having isolated gate drive power supplies
US12040139B2 (en) 2022-05-09 2024-07-16 COMET Technologies USA, Inc. Variable capacitor with linear impedance and high voltage breakdown
US11657980B1 (en) 2022-05-09 2023-05-23 COMET Technologies USA, Inc. Dielectric fluid variable capacitor
US12051549B2 (en) 2022-08-02 2024-07-30 COMET Technologies USA, Inc. Coaxial variable capacitor
KR20240022912A (ko) 2022-08-12 2024-02-20 삼성전자주식회사 반도체 설비 모니터링 장치, 및 그 모니터링 장치를 구비한 반도체 설비
CN115662867A (zh) * 2022-09-06 2023-01-31 拓荆科技股份有限公司 等离子体探测器及其制备方法
CN116344382A (zh) * 2022-09-06 2023-06-27 拓荆科技股份有限公司 工艺腔参数的探测装置及其加工方法与安装方法
US12132435B2 (en) 2022-10-27 2024-10-29 COMET Technologies USA, Inc. Method for repeatable stepper motor homing
EP4625471A3 (en) 2022-11-25 2025-12-31 Applied Materials, Inc. ARMORED APPARATUS FOR THE ANALYSIS OF THE IONIC ENERGY OF PLASMA PROCESSES
KR20240115067A (ko) * 2023-01-18 2024-07-25 삼성전자주식회사 플라즈마 진단 장치 및 그것의 동작 방법
KR20240162309A (ko) 2023-05-08 2024-11-15 삼성전자주식회사 센서 장치 및 이를 이용하는 반도체 공정 장치
US20250054789A1 (en) * 2023-08-07 2025-02-13 Kla Corporation Method of fabrication and implementation of process condition measurement device
JP2025078992A (ja) * 2023-11-09 2025-05-21 東京エレクトロン株式会社 プラズマ評価システム及びプラズマ評価方法
US20250259831A1 (en) * 2024-02-08 2025-08-14 Applied Materials, Inc. Wireless measurement characterization

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1452230A (zh) * 2002-04-17 2003-10-29 旺宏电子股份有限公司 一种用以评估等离子体天线效应的高灵敏度测试结构
US20040007326A1 (en) * 2002-07-12 2004-01-15 Roche Gregory A. Wafer probe for measuring plasma and surface characteristics in plasma processing enviroments
CN1479887A (zh) * 2000-08-22 2004-03-03 晶片技术公司 用来获得用于加工操作、优化、监视和控制的数据的方法和设备
TW200506388A (en) * 2003-08-14 2005-02-16 Advanced Energy Ind Inc Sensor array for measuring plasma characteristics in plasma processing environments
TWI256278B (en) * 2002-04-24 2006-06-01 Japan Science & Tech Corp Window probe, plasma monitoring device, and plasma processing device
US20060171848A1 (en) * 2005-01-31 2006-08-03 Advanced Energy Industries, Inc. Diagnostic plasma sensors for endpoint and end-of-life detection
US20070251339A1 (en) * 2006-05-01 2007-11-01 Sensarray Corporation Process Condition Measuring Device with Shielding

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3122175B2 (ja) * 1991-08-05 2001-01-09 忠弘 大見 プラズマ処理装置
US5801386A (en) * 1995-12-11 1998-09-01 Applied Materials, Inc. Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same
GB9620151D0 (en) * 1996-09-27 1996-11-13 Surface Tech Sys Ltd Plasma processing apparatus
US6326794B1 (en) * 1999-01-14 2001-12-04 International Business Machines Corporation Method and apparatus for in-situ monitoring of ion energy distribution for endpoint detection via capacitance measurement
US6159864A (en) * 1999-02-24 2000-12-12 United Microelectronics Corp. Method of preventing damages of gate oxides of a semiconductor wafer in a plasma-related process
US6827584B2 (en) 1999-12-28 2004-12-07 Formfactor, Inc. Interconnect for microelectronic structures with enhanced spring characteristics
JP3698991B2 (ja) * 2000-02-16 2005-09-21 株式会社日立製作所 プラズマ電位差、電流測定装置及びそれを用いた試料の処理方法
DE10032579B4 (de) * 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
US7960670B2 (en) * 2005-05-03 2011-06-14 Kla-Tencor Corporation Methods of and apparatuses for measuring electrical parameters of a plasma process
JP4175456B2 (ja) * 2002-03-26 2008-11-05 株式会社 東北テクノアーチ オンウエハ・モニタリング・システム
CN1157103C (zh) 2002-04-19 2004-07-07 大连理工大学 用于等离子体诊断的复合探针
US20040028837A1 (en) * 2002-06-28 2004-02-12 Tokyo Electron Limited Method and apparatus for plasma processing
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US7151366B2 (en) * 2002-12-03 2006-12-19 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
US7135852B2 (en) * 2002-12-03 2006-11-14 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
US6939726B2 (en) * 2003-08-04 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Via array monitor and method of monitoring induced electrical charging
US20060043063A1 (en) * 2004-09-02 2006-03-02 Mahoney Leonard J Electrically floating diagnostic plasma probe with ion property sensors
KR100663277B1 (ko) * 2004-12-20 2007-01-02 삼성전자주식회사 휴대단말기의 시스템 관련 이벤트 처리 장치 및 방법
US7449414B2 (en) * 2006-08-07 2008-11-11 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
JP4838197B2 (ja) * 2007-06-05 2011-12-14 東京エレクトロン株式会社 プラズマ処理装置，電極温度調整装置，電極温度調整方法
JP5407019B2 (ja) * 2007-08-31 2014-02-05 ラピスセミコンダクタ株式会社 プラズマモニタリング方法
JP2009252799A (ja) 2008-04-01 2009-10-29 Nitto Denko Corp 半導体装置の製造方法
US8547085B2 (en) * 2008-07-07 2013-10-01 Lam Research Corporation Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber
US8889021B2 (en) 2010-01-21 2014-11-18 Kla-Tencor Corporation Process condition sensing device and method for plasma chamber

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1479887A (zh) * 2000-08-22 2004-03-03 晶片技术公司 用来获得用于加工操作、优化、监视和控制的数据的方法和设备
CN1452230A (zh) * 2002-04-17 2003-10-29 旺宏电子股份有限公司 一种用以评估等离子体天线效应的高灵敏度测试结构
TWI256278B (en) * 2002-04-24 2006-06-01 Japan Science & Tech Corp Window probe, plasma monitoring device, and plasma processing device
US20040007326A1 (en) * 2002-07-12 2004-01-15 Roche Gregory A. Wafer probe for measuring plasma and surface characteristics in plasma processing enviroments
TW200506388A (en) * 2003-08-14 2005-02-16 Advanced Energy Ind Inc Sensor array for measuring plasma characteristics in plasma processing environments
US20060171848A1 (en) * 2005-01-31 2006-08-03 Advanced Energy Industries, Inc. Diagnostic plasma sensors for endpoint and end-of-life detection
US20070251339A1 (en) * 2006-05-01 2007-11-01 Sensarray Corporation Process Condition Measuring Device with Shielding

Also Published As

Publication number Publication date
EP2526743A4 (en) 2015-05-06
US20110174777A1 (en) 2011-07-21
EP2526743B1 (en) 2016-12-07
WO2011090850A2 (en) 2011-07-28
US20150020972A1 (en) 2015-01-22
CN102771194A (zh) 2012-11-07
US8889021B2 (en) 2014-11-18
EP2526743A2 (en) 2012-11-28
WO2011090850A3 (en) 2011-11-17
US20180114681A1 (en) 2018-04-26
KR101764940B1 (ko) 2017-08-03
CN102771194B (zh) 2015-12-02
US10777393B2 (en) 2020-09-15
KR20120118006A (ko) 2012-10-25
JP2013518370A (ja) 2013-05-20
TW201143541A (en) 2011-12-01
JP6316898B2 (ja) 2018-04-25
JP2017069212A (ja) 2017-04-06

Similar Documents

Publication Publication Date Title
TWI612852B (zh) 用於電漿腔室之處理條件感測裝置及方法
JP5166270B2 (ja) プラズマ加工の電気パラメータを測定するセンサ装置
US9754770B2 (en) Method and apparatus of diagnosing plasma in plasma space
JP3835486B2 (ja) ホール装置のオフセット電圧を減少させる方法
JP4508423B2 (ja) プラズマ処理システムにおいてエッチング終点を決定するための方法および装置
CA2863318C (en) Noise shielding techniques for ultra low current measurements in biochemical applications
US20080246493A1 (en) Semiconductor Processing System With Integrated Showerhead Distance Measuring Device
JP2013518370A5 (https=)
KR20010092676A (ko) 플라즈마를 사용하여 반도체 웨이퍼를 처리하는반도체제조장치 및 처리방법 및 웨이퍼 전위프로브
US10964515B2 (en) Plasma diagnostic system and method
TWI404966B (zh) 決定基板上導電層的厚度之方法及裝置
CN114695317A (zh) 一种浮置源极接触刻蚀工艺的测试结构以及监控方法
TWI892721B (zh) 螺旋阻抗結構
KR100936205B1 (ko) 정전 척의 유전체층의 체적 저항률 측정 장치 및 그 장치를사용한 측정 방법
KR20080022556A (ko) 기판 상의 일 세트의 도전층에 대한 전기 응답을최적화하기 위한 방법 및 장치
US20260002860A1 (en) Electrode probing structure
KR101564787B1 (ko) 2차원 공정 모니터링 장치
JP4770578B2 (ja) 評価用試料およびその製造方法、ならびに評価方法
CN117012763A (zh) 厚度分析晶圆、系统及方法，芯片制备方法
JPH0567662A (ja) ウエハ温度測定方法及び装置