JP2013511823A - ワークピースの注入処理を制御可能に実行する装置および方法 - Google Patents

ワークピースの注入処理を制御可能に実行する装置および方法 Download PDF

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JP2013511823A
JP2013511823A JP2012539080A JP2012539080A JP2013511823A JP 2013511823 A JP2013511823 A JP 2013511823A JP 2012539080 A JP2012539080 A JP 2012539080A JP 2012539080 A JP2012539080 A JP 2012539080A JP 2013511823 A JP2013511823 A JP 2013511823A
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Prior art keywords
workpiece
plasma
focusing plate
aperture
ions
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JP2013511823A5 (enExample
Inventor
ルノー アンソニー
ゴデ ルドヴィック
ジェイ ミラー ティモシー
シー オルソン ジョセフ
シング ヴィクラム
ブオノドノ ジェームス
ラーマッパ ディーパック
ジェイ ロウ ラッセル
ガプタ アトゥル
エム ダニエルズ ケビン
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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Publication of JP2013511823A publication Critical patent/JP2013511823A/ja
Publication of JP2013511823A5 publication Critical patent/JP2013511823A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/081—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing particle radiation or gamma-radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2012539080A 2009-11-17 2010-11-17 ワークピースの注入処理を制御可能に実行する装置および方法 Pending JP2013511823A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26198309P 2009-11-17 2009-11-17
US61/261,983 2009-11-17
US12/947,078 2010-11-16
US12/947,078 US8461030B2 (en) 2009-11-17 2010-11-16 Apparatus and method for controllably implanting workpieces
PCT/US2010/056952 WO2011062945A1 (en) 2009-11-17 2010-11-17 Apparatus and method for controllably implanting workpieces

Publications (2)

Publication Number Publication Date
JP2013511823A true JP2013511823A (ja) 2013-04-04
JP2013511823A5 JP2013511823A5 (enExample) 2013-11-21

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JP2012539080A Pending JP2013511823A (ja) 2009-11-17 2010-11-17 ワークピースの注入処理を制御可能に実行する装置および方法

Country Status (7)

Country Link
US (2) US8461030B2 (enExample)
EP (1) EP2502254A1 (enExample)
JP (1) JP2013511823A (enExample)
KR (1) KR20120105469A (enExample)
CN (1) CN102971825A (enExample)
TW (1) TWI485743B (enExample)
WO (1) WO2011062945A1 (enExample)

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JP2017533542A (ja) * 2014-09-10 2017-11-09 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 隠れ偏向電極を用いるイオンビームのイオン角度分布の制御
JP2018504774A (ja) * 2014-12-18 2018-02-15 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド ウエハー処理のためのダイナミック加熱方法及びシステム
JP2020521322A (ja) * 2017-05-19 2020-07-16 トタル ソシエテ アノニムＴｏｔａｌ Ｓａ パターン構造加工のための装置と方法

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US8592230B2 (en) 2010-04-22 2013-11-26 Varian Semiconductor Equipment Associates, Inc. Method for patterning a substrate using ion assisted selective depostion
US8435727B2 (en) 2010-10-01 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying photoresist using electromagnetic radiation and ion implantation
KR101915753B1 (ko) * 2010-10-21 2018-11-07 삼성디스플레이 주식회사 이온 주입 시스템 및 이를 이용한 이온 주입 방법
DE102010060910A1 (de) * 2010-11-30 2012-05-31 Roth & Rau Ag Verfahren und Vorrichtung zur Ionenimplantation
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US8716682B2 (en) 2011-04-04 2014-05-06 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for multiple slot ion implantation
US8288741B1 (en) * 2011-08-16 2012-10-16 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for three dimensional ion processing
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US9297063B2 (en) 2012-04-26 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Plasma potential modulated ion implantation system
JP2014045036A (ja) * 2012-08-24 2014-03-13 Amaya Corp 半導体装置の製造方法
TWI570745B (zh) * 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極
US9232628B2 (en) 2013-02-20 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Method and system for plasma-assisted ion beam processing
US9236257B2 (en) * 2013-03-13 2016-01-12 Varian Semiconductor Equipment Associates, Inc. Techniques to mitigate straggle damage to sensitive structures
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JP6150632B2 (ja) * 2013-06-26 2017-06-21 住友重機械イオンテクノロジー株式会社 イオンビーム測定装置及びイオンビーム測定方法
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US9520267B2 (en) * 2014-06-20 2016-12-13 Applied Mateirals, Inc. Bias voltage frequency controlled angular ion distribution in plasma processing
US10730082B2 (en) * 2016-10-26 2020-08-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for differential in situ cleaning
US10276340B1 (en) * 2017-12-20 2019-04-30 Varian Semiconductor Equipment Associates, Inc. Low particle capacitively coupled components for workpiece processing
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JPH03255622A (ja) * 1990-03-05 1991-11-14 Matsushita Electric Ind Co Ltd 不純物の導入装置及びその導入方法
JPH08213339A (ja) * 1995-02-02 1996-08-20 Hitachi Ltd イオン注入方法およびその装置
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JP2017533542A (ja) * 2014-09-10 2017-11-09 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 隠れ偏向電極を用いるイオンビームのイオン角度分布の制御
JP2018504774A (ja) * 2014-12-18 2018-02-15 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド ウエハー処理のためのダイナミック加熱方法及びシステム
JP2020521322A (ja) * 2017-05-19 2020-07-16 トタル ソシエテ アノニムＴｏｔａｌ Ｓａ パターン構造加工のための装置と方法
JP7335815B2 (ja) 2017-05-19 2023-08-30 トタルエネルジ エスウ パターン構造加工のための装置と方法

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WO2011062945A1 (en) 2011-05-26
US8461030B2 (en) 2013-06-11
TWI485743B (zh) 2015-05-21
US8937004B2 (en) 2015-01-20
US20130234034A1 (en) 2013-09-12
TW201142906A (en) 2011-12-01
CN102971825A (zh) 2013-03-13
US20110124186A1 (en) 2011-05-26
EP2502254A1 (en) 2012-09-26

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