TWI485743B - 可控制地植入工件的裝置與方法 - Google Patents
可控制地植入工件的裝置與方法 Download PDFInfo
- Publication number
- TWI485743B TWI485743B TW099139576A TW99139576A TWI485743B TW I485743 B TWI485743 B TW I485743B TW 099139576 A TW099139576 A TW 099139576A TW 99139576 A TW99139576 A TW 99139576A TW I485743 B TWI485743 B TW I485743B
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- TW
- Taiwan
- Prior art keywords
- workpiece
- plasma
- pulse
- focusing plate
- aperture
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 28
- 150000002500 ions Chemical class 0.000 claims description 86
- 239000007943 implant Substances 0.000 claims description 50
- 238000012545 processing Methods 0.000 claims description 48
- 238000002513 implantation Methods 0.000 claims description 37
- 239000002019 doping agent Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 239000011148 porous material Substances 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 8
- 230000001360 synchronised effect Effects 0.000 claims description 4
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- 238000010884 ion-beam technique Methods 0.000 description 7
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
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- 229910052734 helium Inorganic materials 0.000 description 2
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- 239000012535 impurity Substances 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/081—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing particle radiation or gamma-radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/1205—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electron Sources, Ion Sources (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26198309P | 2009-11-17 | 2009-11-17 | |
| US12/947,078 US8461030B2 (en) | 2009-11-17 | 2010-11-16 | Apparatus and method for controllably implanting workpieces |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201142906A TW201142906A (en) | 2011-12-01 |
| TWI485743B true TWI485743B (zh) | 2015-05-21 |
Family
ID=43601664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099139576A TWI485743B (zh) | 2009-11-17 | 2010-11-17 | 可控制地植入工件的裝置與方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8461030B2 (enExample) |
| EP (1) | EP2502254A1 (enExample) |
| JP (1) | JP2013511823A (enExample) |
| KR (1) | KR20120105469A (enExample) |
| CN (1) | CN102971825A (enExample) |
| TW (1) | TWI485743B (enExample) |
| WO (1) | WO2011062945A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110027463A1 (en) * | 2009-06-16 | 2011-02-03 | Varian Semiconductor Equipment Associates, Inc. | Workpiece handling system |
| US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| US8164068B2 (en) * | 2009-07-30 | 2012-04-24 | Varian Semiconductor Equipment Associates, Inc. | Mask health monitor using a faraday probe |
| US8592230B2 (en) | 2010-04-22 | 2013-11-26 | Varian Semiconductor Equipment Associates, Inc. | Method for patterning a substrate using ion assisted selective depostion |
| US8435727B2 (en) | 2010-10-01 | 2013-05-07 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying photoresist using electromagnetic radiation and ion implantation |
| KR101915753B1 (ko) * | 2010-10-21 | 2018-11-07 | 삼성디스플레이 주식회사 | 이온 주입 시스템 및 이를 이용한 이온 주입 방법 |
| DE102010060910A1 (de) * | 2010-11-30 | 2012-05-31 | Roth & Rau Ag | Verfahren und Vorrichtung zur Ionenimplantation |
| US8907307B2 (en) * | 2011-03-11 | 2014-12-09 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for maskless patterned implantation |
| US8716682B2 (en) | 2011-04-04 | 2014-05-06 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for multiple slot ion implantation |
| US8288741B1 (en) * | 2011-08-16 | 2012-10-16 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for three dimensional ion processing |
| US9437392B2 (en) | 2011-11-02 | 2016-09-06 | Varian Semiconductor Equipment Associates, Inc. | High-throughput ion implanter |
| WO2013070978A2 (en) | 2011-11-08 | 2013-05-16 | Intevac, Inc. | Substrate processing system and method |
| US9297063B2 (en) | 2012-04-26 | 2016-03-29 | Varian Semiconductor Equipment Associates, Inc. | Plasma potential modulated ion implantation system |
| JP2014045036A (ja) * | 2012-08-24 | 2014-03-13 | Amaya Corp | 半導体装置の製造方法 |
| TWI570745B (zh) * | 2012-12-19 | 2017-02-11 | 因特瓦克公司 | 用於電漿離子植入之柵極 |
| US9232628B2 (en) | 2013-02-20 | 2016-01-05 | Varian Semiconductor Equipment Associates, Inc. | Method and system for plasma-assisted ion beam processing |
| US9236257B2 (en) * | 2013-03-13 | 2016-01-12 | Varian Semiconductor Equipment Associates, Inc. | Techniques to mitigate straggle damage to sensitive structures |
| US20140360670A1 (en) * | 2013-06-05 | 2014-12-11 | Tokyo Electron Limited | Processing system for non-ambipolar electron plasma (nep) treatment of a substrate with sheath potential |
| JP6150632B2 (ja) * | 2013-06-26 | 2017-06-21 | 住友重機械イオンテクノロジー株式会社 | イオンビーム測定装置及びイオンビーム測定方法 |
| US9711316B2 (en) | 2013-10-10 | 2017-07-18 | Varian Semiconductor Equipment Associates, Inc. | Method of cleaning an extraction electrode assembly using pulsed biasing |
| US9520267B2 (en) * | 2014-06-20 | 2016-12-13 | Applied Mateirals, Inc. | Bias voltage frequency controlled angular ion distribution in plasma processing |
| US9514912B2 (en) * | 2014-09-10 | 2016-12-06 | Varian Semiconductor Equipment Associates, Inc. | Control of ion angular distribution of ion beams with hidden deflection electrode |
| US9287148B1 (en) * | 2014-12-18 | 2016-03-15 | Varian Semiconductor Equipment Associates, Inc. | Dynamic heating method and system for wafer processing |
| US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
| EP3404693B1 (en) * | 2017-05-19 | 2019-11-13 | Total SA | Apparatus and method for patterned processing |
| US10276340B1 (en) * | 2017-12-20 | 2019-04-30 | Varian Semiconductor Equipment Associates, Inc. | Low particle capacitively coupled components for workpiece processing |
| US10468226B1 (en) | 2018-09-21 | 2019-11-05 | Varian Semiconductor Equipment Associates, Inc. | Extraction apparatus and system for high throughput ion beam processing |
| US11193198B2 (en) * | 2018-12-17 | 2021-12-07 | Applied Materials, Inc. | Methods of forming devices on a substrate |
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| CN1473346A (zh) * | 2000-09-01 | 2004-02-04 | 用于离子束中所携带的微粒的静电收集器 | |
| US20050051517A1 (en) * | 2003-08-12 | 2005-03-10 | Oehrlein Gottlieb S. | Method and system for nanoscale plasma processing of objects |
| TW200537622A (en) * | 2004-05-10 | 2005-11-16 | Hynix Semiconductor Inc | Method for implanting ions in semiconductor device |
| JP2006278006A (ja) * | 2005-03-28 | 2006-10-12 | Japan Atomic Energy Agency | イオン源引き出し領域におけるプラズマ境界面制御方法及びそのイオン源 |
| US20070087574A1 (en) * | 2005-10-13 | 2007-04-19 | Varian Semiconductor Equipment Associates, Inc. | Conformal doping apparatus and method |
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| DE2835136A1 (de) | 1978-08-10 | 1980-02-14 | Fraunhofer Ges Forschung | Solarelement sowie verfahren und vorrichtung zur herstellung desselben mittels ionenimplantation |
| JPS58180227A (ja) * | 1982-04-17 | 1983-10-21 | Samuko Internatl Kenkyusho:Kk | 複数の反応室を備えた能率的プラズマ処理装置 |
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| JPH08213339A (ja) * | 1995-02-02 | 1996-08-20 | Hitachi Ltd | イオン注入方法およびその装置 |
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| US6203862B1 (en) | 1998-05-13 | 2001-03-20 | Intevac, Inc. | Processing systems with dual ion sources |
| JP2920188B1 (ja) * | 1998-06-26 | 1999-07-19 | 日新電機株式会社 | パルスバイアス水素負イオン注入方法及び注入装置 |
| JP2001189483A (ja) | 1999-10-18 | 2001-07-10 | Sharp Corp | バイパス機能付太陽電池セルおよびバイパス機能付き多接合積層型太陽電池セルおよびそれらの製造方法 |
| JP4969781B2 (ja) | 2005-01-14 | 2012-07-04 | 株式会社アルバック | プラズマドーピング装置 |
| US7820460B2 (en) * | 2007-09-07 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Patterned assembly for manufacturing a solar cell and a method thereof |
| US20090142875A1 (en) | 2007-11-30 | 2009-06-04 | Applied Materials, Inc. | Method of making an improved selective emitter for silicon solar cells |
| US7727866B2 (en) | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
| US20090317937A1 (en) | 2008-06-20 | 2009-12-24 | Atul Gupta | Maskless Doping Technique for Solar Cells |
| CN102099870A (zh) | 2008-06-11 | 2011-06-15 | 因特瓦克公司 | 用于在太阳能电池制作中使用的专用注入系统和方法 |
| US8356550B2 (en) | 2008-07-25 | 2013-01-22 | Federal-Mogul Corporation | Piston skirt with friction reducing oil recess and oil reservoir |
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| US8173527B2 (en) | 2009-10-19 | 2012-05-08 | Varian Semiconductor Equipment Associates, Inc. | Stepped masking for patterned implantation |
-
2010
- 2010-11-16 US US12/947,078 patent/US8461030B2/en active Active
- 2010-11-17 JP JP2012539080A patent/JP2013511823A/ja active Pending
- 2010-11-17 WO PCT/US2010/056952 patent/WO2011062945A1/en not_active Ceased
- 2010-11-17 KR KR1020127015077A patent/KR20120105469A/ko not_active Withdrawn
- 2010-11-17 EP EP10788436A patent/EP2502254A1/en not_active Withdrawn
- 2010-11-17 TW TW099139576A patent/TWI485743B/zh not_active IP Right Cessation
- 2010-11-17 CN CN2010800515328A patent/CN102971825A/zh active Pending
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2013
- 2013-04-19 US US13/866,315 patent/US8937004B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20120105469A (ko) | 2012-09-25 |
| WO2011062945A1 (en) | 2011-05-26 |
| US8461030B2 (en) | 2013-06-11 |
| US8937004B2 (en) | 2015-01-20 |
| US20130234034A1 (en) | 2013-09-12 |
| JP2013511823A (ja) | 2013-04-04 |
| TW201142906A (en) | 2011-12-01 |
| CN102971825A (zh) | 2013-03-13 |
| US20110124186A1 (en) | 2011-05-26 |
| EP2502254A1 (en) | 2012-09-26 |
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