JP2013505590A - 半極性ウルツ鉱型ｉｉｉ族窒化物をベースとする半導体層、及び当該窒化物をベースとする半導体部材 - Google Patents

半極性ウルツ鉱型ｉｉｉ族窒化物をベースとする半導体層、及び当該窒化物をベースとする半導体部材 Download PDF

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JP2013505590A
JP2013505590A JP2012530124A JP2012530124A JP2013505590A JP 2013505590 A JP2013505590 A JP 2013505590A JP 2012530124 A JP2012530124 A JP 2012530124A JP 2012530124 A JP2012530124 A JP 2012530124A JP 2013505590 A JP2013505590 A JP 2013505590A
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semiconductor layer
group iii
growth
iii nitride
substrate
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JP2013505590A5 (https=
Inventor
ダートガー アーミン
クロスト アロイス
ラヴァシュ ロガイイェ
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Azzurro Semiconductors AG
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Azzurro Semiconductors AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
JP2012530124A 2009-09-20 2010-09-16 半極性ウルツ鉱型ｉｉｉ族窒化物をベースとする半導体層、及び当該窒化物をベースとする半導体部材 Pending JP2013505590A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009042349.4 2009-09-20
DE102009042349A DE102009042349B4 (de) 2009-09-20 2009-09-20 Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente
PCT/DE2010/001094 WO2011032546A1 (de) 2009-09-20 2010-09-16 Semipolare wurtzitische gruppe-iii-nitrid basierte halbleiterschichten und darauf basierende halbleiterbauelemente

Publications (2)

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JP2013505590A true JP2013505590A (ja) 2013-02-14
JP2013505590A5 JP2013505590A5 (https=) 2013-11-07

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JP2012530124A Pending JP2013505590A (ja) 2009-09-20 2010-09-16 半極性ウルツ鉱型ｉｉｉ族窒化物をベースとする半導体層、及び当該窒化物をベースとする半導体部材

Country Status (8)

Country Link
US (1) US20120217617A1 (https=)
EP (1) EP2478551A1 (https=)
JP (1) JP2013505590A (https=)
KR (1) KR20120083399A (https=)
CN (1) CN102668027A (https=)
DE (1) DE102009042349B4 (https=)
TW (1) TW201126757A (https=)
WO (1) WO2011032546A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9299560B2 (en) * 2012-01-13 2016-03-29 Applied Materials, Inc. Methods for depositing group III-V layers on substrates
US9368582B2 (en) 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
DE102014102039A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Nitrid-Verbindungshalbleiterschicht
WO2018177552A1 (en) * 2017-03-31 2018-10-04 Cambridge Enterprise Limited Zincblende structure group iii-nitride
CN111448674B (zh) * 2017-12-05 2023-08-22 阿卜杜拉国王科技大学 用于形成分级纤锌矿iii族氮化物合金层的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145514A (ja) * 1997-11-05 1999-05-28 Toshiba Corp 窒化ガリウム系半導体素子およびその製造方法
JP2001093834A (ja) * 1999-09-20 2001-04-06 Sanyo Electric Co Ltd 半導体素子および半導体ウエハならびにその製造方法
JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
JP2008021889A (ja) * 2006-07-14 2008-01-31 Covalent Materials Corp 窒化物半導体単結晶

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2743901B2 (ja) * 1996-01-12 1998-04-28 日本電気株式会社 窒化ガリウムの結晶成長方法
JP3888374B2 (ja) * 2004-03-17 2007-02-28 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
US20080296626A1 (en) * 2007-05-30 2008-12-04 Benjamin Haskell Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145514A (ja) * 1997-11-05 1999-05-28 Toshiba Corp 窒化ガリウム系半導体素子およびその製造方法
JP2001093834A (ja) * 1999-09-20 2001-04-06 Sanyo Electric Co Ltd 半導体素子および半導体ウエハならびにその製造方法
JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
JP2008021889A (ja) * 2006-07-14 2008-01-31 Covalent Materials Corp 窒化物半導体単結晶

Also Published As

Publication number Publication date
US20120217617A1 (en) 2012-08-30
WO2011032546A1 (de) 2011-03-24
CN102668027A (zh) 2012-09-12
KR20120083399A (ko) 2012-07-25
DE102009042349A1 (de) 2011-03-31
DE102009042349B4 (de) 2011-06-16
TW201126757A (en) 2011-08-01
EP2478551A1 (de) 2012-07-25

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