CN102668027A - 基于半极化纤锌矿型第iii族氮化物的半导体层和基于前者的半导体元件 - Google Patents

基于半极化纤锌矿型第iii族氮化物的半导体层和基于前者的半导体元件 Download PDF

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Publication number
CN102668027A
CN102668027A CN2010800526159A CN201080052615A CN102668027A CN 102668027 A CN102668027 A CN 102668027A CN 2010800526159 A CN2010800526159 A CN 2010800526159A CN 201080052615 A CN201080052615 A CN 201080052615A CN 102668027 A CN102668027 A CN 102668027A
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China
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growth
group iii
wurtzite
semipolarized
semiconductor layer
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CN2010800526159A
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English (en)
Chinese (zh)
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A.达德加
A.克罗斯特
R.拉瓦什
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Azzurro Semiconductors AG
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Azzurro Semiconductors AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
CN2010800526159A 2009-09-20 2010-09-16 基于半极化纤锌矿型第iii族氮化物的半导体层和基于前者的半导体元件 Pending CN102668027A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009042349.4 2009-09-20
DE102009042349A DE102009042349B4 (de) 2009-09-20 2009-09-20 Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente
PCT/DE2010/001094 WO2011032546A1 (de) 2009-09-20 2010-09-16 Semipolare wurtzitische gruppe-iii-nitrid basierte halbleiterschichten und darauf basierende halbleiterbauelemente

Publications (1)

Publication Number Publication Date
CN102668027A true CN102668027A (zh) 2012-09-12

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Family Applications (1)

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CN2010800526159A Pending CN102668027A (zh) 2009-09-20 2010-09-16 基于半极化纤锌矿型第iii族氮化物的半导体层和基于前者的半导体元件

Country Status (8)

Country Link
US (1) US20120217617A1 (https=)
EP (1) EP2478551A1 (https=)
JP (1) JP2013505590A (https=)
KR (1) KR20120083399A (https=)
CN (1) CN102668027A (https=)
DE (1) DE102009042349B4 (https=)
TW (1) TW201126757A (https=)
WO (1) WO2011032546A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111448674A (zh) * 2017-12-05 2020-07-24 阿卜杜拉国王科技大学 用于形成分级纤锌矿iii族氮化物合金层的方法
CN116259531A (zh) * 2017-03-31 2023-06-13 剑桥实业有限公司 闪锌矿结构iii族氮化物

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9299560B2 (en) * 2012-01-13 2016-03-29 Applied Materials, Inc. Methods for depositing group III-V layers on substrates
US9368582B2 (en) 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
DE102014102039A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Nitrid-Verbindungshalbleiterschicht

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843227A (en) * 1996-01-12 1998-12-01 Nec Corporation Crystal growth method for gallium nitride films
CN1670918A (zh) * 2004-03-17 2005-09-21 住友电气工业株式会社 制备单晶GaN衬底的方法及单晶GaN衬底

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JP3500281B2 (ja) * 1997-11-05 2004-02-23 株式会社東芝 窒化ガリウム系半導体素子およびその製造方法
JP2001093834A (ja) * 1999-09-20 2001-04-06 Sanyo Electric Co Ltd 半導体素子および半導体ウエハならびにその製造方法
JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
JP2008021889A (ja) * 2006-07-14 2008-01-31 Covalent Materials Corp 窒化物半導体単結晶
US20080296626A1 (en) * 2007-05-30 2008-12-04 Benjamin Haskell Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843227A (en) * 1996-01-12 1998-12-01 Nec Corporation Crystal growth method for gallium nitride films
CN1670918A (zh) * 2004-03-17 2005-09-21 住友电气工业株式会社 制备单晶GaN衬底的方法及单晶GaN衬底

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MIN YANG ET AL: "Maskless selective growth of semi-polar(1122)GaN on Si(311) substrate by metal organic vapor phase epitaxy", 《JOURNAL OF CRYSTAL GROWTH》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116259531A (zh) * 2017-03-31 2023-06-13 剑桥实业有限公司 闪锌矿结构iii族氮化物
CN116259531B (zh) * 2017-03-31 2025-07-04 剑桥实业有限公司 闪锌矿结构iii族氮化物
CN111448674A (zh) * 2017-12-05 2020-07-24 阿卜杜拉国王科技大学 用于形成分级纤锌矿iii族氮化物合金层的方法
CN111448674B (zh) * 2017-12-05 2023-08-22 阿卜杜拉国王科技大学 用于形成分级纤锌矿iii族氮化物合金层的方法

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Publication number Publication date
JP2013505590A (ja) 2013-02-14
US20120217617A1 (en) 2012-08-30
WO2011032546A1 (de) 2011-03-24
KR20120083399A (ko) 2012-07-25
DE102009042349A1 (de) 2011-03-31
DE102009042349B4 (de) 2011-06-16
TW201126757A (en) 2011-08-01
EP2478551A1 (de) 2012-07-25

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Application publication date: 20120912