TW201126757A - Semipolar or nonpolar wurtzite group-III nitride layers and semiconductor components based thereon - Google Patents

Semipolar or nonpolar wurtzite group-III nitride layers and semiconductor components based thereon Download PDF

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Publication number
TW201126757A
TW201126757A TW099131883A TW99131883A TW201126757A TW 201126757 A TW201126757 A TW 201126757A TW 099131883 A TW099131883 A TW 099131883A TW 99131883 A TW99131883 A TW 99131883A TW 201126757 A TW201126757 A TW 201126757A
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TW
Taiwan
Prior art keywords
substrate
grown
crystal structure
nitride layer
layer
Prior art date
Application number
TW099131883A
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English (en)
Chinese (zh)
Inventor
Roghaiyeh Ravash
Armin Dadgar
Alois Krost
Original Assignee
Azzurro Semiconductors Ag
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Publication date
Application filed by Azzurro Semiconductors Ag filed Critical Azzurro Semiconductors Ag
Publication of TW201126757A publication Critical patent/TW201126757A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
TW099131883A 2009-09-20 2010-09-20 Semipolar or nonpolar wurtzite group-III nitride layers and semiconductor components based thereon TW201126757A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009042349A DE102009042349B4 (de) 2009-09-20 2009-09-20 Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente

Publications (1)

Publication Number Publication Date
TW201126757A true TW201126757A (en) 2011-08-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW099131883A TW201126757A (en) 2009-09-20 2010-09-20 Semipolar or nonpolar wurtzite group-III nitride layers and semiconductor components based thereon

Country Status (8)

Country Link
US (1) US20120217617A1 (https=)
EP (1) EP2478551A1 (https=)
JP (1) JP2013505590A (https=)
KR (1) KR20120083399A (https=)
CN (1) CN102668027A (https=)
DE (1) DE102009042349B4 (https=)
TW (1) TW201126757A (https=)
WO (1) WO2011032546A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9299560B2 (en) * 2012-01-13 2016-03-29 Applied Materials, Inc. Methods for depositing group III-V layers on substrates
US9368582B2 (en) 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
DE102014102039A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Nitrid-Verbindungshalbleiterschicht
WO2018177552A1 (en) * 2017-03-31 2018-10-04 Cambridge Enterprise Limited Zincblende structure group iii-nitride
CN111448674B (zh) * 2017-12-05 2023-08-22 阿卜杜拉国王科技大学 用于形成分级纤锌矿iii族氮化物合金层的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2743901B2 (ja) * 1996-01-12 1998-04-28 日本電気株式会社 窒化ガリウムの結晶成長方法
JP3500281B2 (ja) * 1997-11-05 2004-02-23 株式会社東芝 窒化ガリウム系半導体素子およびその製造方法
JP2001093834A (ja) * 1999-09-20 2001-04-06 Sanyo Electric Co Ltd 半導体素子および半導体ウエハならびにその製造方法
JP3888374B2 (ja) * 2004-03-17 2007-02-28 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
JP2008021889A (ja) * 2006-07-14 2008-01-31 Covalent Materials Corp 窒化物半導体単結晶
US20080296626A1 (en) * 2007-05-30 2008-12-04 Benjamin Haskell Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same

Also Published As

Publication number Publication date
JP2013505590A (ja) 2013-02-14
US20120217617A1 (en) 2012-08-30
WO2011032546A1 (de) 2011-03-24
CN102668027A (zh) 2012-09-12
KR20120083399A (ko) 2012-07-25
DE102009042349A1 (de) 2011-03-31
DE102009042349B4 (de) 2011-06-16
EP2478551A1 (de) 2012-07-25

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