KR20120083399A - 반극성 우르츠광 3족 질화물계 반도체층 및 이를 기반으로 한 반도체 부품 - Google Patents

반극성 우르츠광 3족 질화물계 반도체층 및 이를 기반으로 한 반도체 부품 Download PDF

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KR20120083399A
KR20120083399A KR1020127009222A KR20127009222A KR20120083399A KR 20120083399 A KR20120083399 A KR 20120083399A KR 1020127009222 A KR1020127009222 A KR 1020127009222A KR 20127009222 A KR20127009222 A KR 20127009222A KR 20120083399 A KR20120083399 A KR 20120083399A
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South Korea
Prior art keywords
group iii
iii nitride
growth
semipolar
urtzite
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Korean (ko)
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아르민 데드가
알로이스 크로스트
로하이야 라바쉬
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아주로 세미컨턱터스 아게
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020127009222A 2009-09-20 2010-09-16 반극성 우르츠광 3족 질화물계 반도체층 및 이를 기반으로 한 반도체 부품 Withdrawn KR20120083399A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009042349.4 2009-09-20
DE102009042349A DE102009042349B4 (de) 2009-09-20 2009-09-20 Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente

Publications (1)

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KR20120083399A true KR20120083399A (ko) 2012-07-25

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KR1020127009222A Withdrawn KR20120083399A (ko) 2009-09-20 2010-09-16 반극성 우르츠광 3족 질화물계 반도체층 및 이를 기반으로 한 반도체 부품

Country Status (8)

Country Link
US (1) US20120217617A1 (https=)
EP (1) EP2478551A1 (https=)
JP (1) JP2013505590A (https=)
KR (1) KR20120083399A (https=)
CN (1) CN102668027A (https=)
DE (1) DE102009042349B4 (https=)
TW (1) TW201126757A (https=)
WO (1) WO2011032546A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9299560B2 (en) * 2012-01-13 2016-03-29 Applied Materials, Inc. Methods for depositing group III-V layers on substrates
US9368582B2 (en) 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
DE102014102039A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Nitrid-Verbindungshalbleiterschicht
WO2018177552A1 (en) * 2017-03-31 2018-10-04 Cambridge Enterprise Limited Zincblende structure group iii-nitride
CN111448674B (zh) * 2017-12-05 2023-08-22 阿卜杜拉国王科技大学 用于形成分级纤锌矿iii族氮化物合金层的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2743901B2 (ja) * 1996-01-12 1998-04-28 日本電気株式会社 窒化ガリウムの結晶成長方法
JP3500281B2 (ja) * 1997-11-05 2004-02-23 株式会社東芝 窒化ガリウム系半導体素子およびその製造方法
JP2001093834A (ja) * 1999-09-20 2001-04-06 Sanyo Electric Co Ltd 半導体素子および半導体ウエハならびにその製造方法
JP3888374B2 (ja) * 2004-03-17 2007-02-28 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
JP2008021889A (ja) * 2006-07-14 2008-01-31 Covalent Materials Corp 窒化物半導体単結晶
US20080296626A1 (en) * 2007-05-30 2008-12-04 Benjamin Haskell Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same

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Publication number Publication date
JP2013505590A (ja) 2013-02-14
US20120217617A1 (en) 2012-08-30
WO2011032546A1 (de) 2011-03-24
CN102668027A (zh) 2012-09-12
DE102009042349A1 (de) 2011-03-31
DE102009042349B4 (de) 2011-06-16
TW201126757A (en) 2011-08-01
EP2478551A1 (de) 2012-07-25

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