JP2013505590A - 半極性ウルツ鉱型iii族窒化物をベースとする半導体層、及び当該窒化物をベースとする半導体部材 - Google Patents
半極性ウルツ鉱型iii族窒化物をベースとする半導体層、及び当該窒化物をベースとする半導体部材 Download PDFInfo
- Publication number
- JP2013505590A JP2013505590A JP2012530124A JP2012530124A JP2013505590A JP 2013505590 A JP2013505590 A JP 2013505590A JP 2012530124 A JP2012530124 A JP 2012530124A JP 2012530124 A JP2012530124 A JP 2012530124A JP 2013505590 A JP2013505590 A JP 2013505590A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- group iii
- growth
- iii nitride
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 229910052984 zinc sulfide Inorganic materials 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 86
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 229910003460 diamond Chemical group 0.000 claims description 3
- 239000010432 diamond Chemical group 0.000 claims description 3
- 150000002831 nitrogen free-radicals Chemical class 0.000 claims description 3
- 238000001311 chemical methods and process Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000013508 migration Methods 0.000 claims description 2
- 230000005012 migration Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 abstract description 2
- 239000010980 sapphire Substances 0.000 abstract description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 11
- 238000010899 nucleation Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 239000000872 buffer Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
FET:電界トランジスタ
HVPE:水素化物蒸気相エピタキシー、水素化物気相エピタキシー
MBE:分子ビームエピタキシー、分子照射エピタキシー
MEMS:マイクロメカニカルシステム、電気機械的マイクロシステム
MOVPE、MOCVD:有機金属蒸気相エピタキシー、有機金属気相エピタキシー
SAW:表面音波、表面波構成要素
Claims (11)
- 半極性ウルツ鉱型III族窒化物をベースとする半導体層において、
閃亜鉛鉱又はダイヤモンド構造を有する平面基板上で、かつ(111)表面に対して>9°配向性がずれた表面で層成長させたことを特徴とする、前記半導体層。 - 半極性ウルツ鉱型III族窒化物をベースとする、請求項1に記載の半導体層において、(211)配向面で層成長させたことを特徴とする、前記半導体層。
- 半極性ウルツ鉱型III族窒化物をベースとする、請求項1に記載の半導体層において、(311)配向面で層成長させたことを特徴とする、前記半導体層。
- 半極性ウルツ鉱型III族窒化物をベースとする、請求項1に記載の半導体層において、(322)配向面で層成長させたことを特徴とする、前記半導体層。
- 半極性ウルツ鉱型III族窒化物をベースとする、請求項1から4までのいずれか1項に記載の半導体層において、
IV族半導体表面で層成長させたことを特徴とする、前記半導体層。 - 半極性ウルツ鉱型III族窒化物をベースとする、請求項1から5までのいずれか1項に記載の半導体層において、
900℃未満での気相法、並びに700℃未満での分子照射法及びスパッタリング法における1つ又は複数の温度で、シード層を成長させたことを特徴とする、前記半導体層。 - 半極性ウルツ鉱型III族窒化物をベースとする、請求項1から6までのいずれか1項に記載の半導体層において、
Al含有シード層を成長させたことを特徴とする、前記半導体層。 - 半極性ウルツ鉱型III族窒化物をベースとする、請求項1から7までのいずれか1項に記載の半導体層において、
物理的又は化学的なプロセスによる処理によって、(111)表面を有する幅広いステップを形成し、ここで、生成する(111)テラスが、三回表面対称性を有することを特徴とする、前記半導体層。 - 半極性ウルツ鉱型III族窒化物をベースとする、請求項1から8までのいずれか1項に記載の半導体層において、
(111)表面を有する幅広いステップを形成し、ここで生成する(111)テラスが、2つのモノレイヤーに相当する幅を少なくとも1つ有することを特徴とする、前記半導体層。 - 半極性ウルツ鉱型III族窒化物をベースとする、請求項1から9までのいずれか1項に記載の半導体層において、
(111)表面に対して>9°配向性がずれた、閃亜鉛鉱構造を有するIII−V基板の表面で層成長させ、かつ
III族窒化物の成長開始前に、アンモニア、窒素放出性化合物、又は窒素ラジカルからの移行によって基板表面の少なくとも1つのモノレイヤーを窒化した
ことを特徴とする、前記半導体層。 - 請求項1から10までのいずれか1項に記載の半導体層をベースとする、半導体構成要素。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009042349.4 | 2009-09-20 | ||
DE102009042349A DE102009042349B4 (de) | 2009-09-20 | 2009-09-20 | Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente |
PCT/DE2010/001094 WO2011032546A1 (de) | 2009-09-20 | 2010-09-16 | Semipolare wurtzitische gruppe-iii-nitrid basierte halbleiterschichten und darauf basierende halbleiterbauelemente |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013505590A true JP2013505590A (ja) | 2013-02-14 |
JP2013505590A5 JP2013505590A5 (ja) | 2013-11-07 |
Family
ID=43480844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012530124A Pending JP2013505590A (ja) | 2009-09-20 | 2010-09-16 | 半極性ウルツ鉱型iii族窒化物をベースとする半導体層、及び当該窒化物をベースとする半導体部材 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20120217617A1 (ja) |
EP (1) | EP2478551A1 (ja) |
JP (1) | JP2013505590A (ja) |
KR (1) | KR20120083399A (ja) |
CN (1) | CN102668027A (ja) |
DE (1) | DE102009042349B4 (ja) |
TW (1) | TW201126757A (ja) |
WO (1) | WO2011032546A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9299560B2 (en) * | 2012-01-13 | 2016-03-29 | Applied Materials, Inc. | Methods for depositing group III-V layers on substrates |
US9368582B2 (en) | 2013-11-04 | 2016-06-14 | Avogy, Inc. | High power gallium nitride electronics using miscut substrates |
DE102014102039A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Nitrid-Verbindungshalbleiterschicht |
WO2019111153A1 (en) * | 2017-12-05 | 2019-06-13 | King Abdullah University Of Science And Technology | Methods for forming graded wurtzite iii-nitride alloy layers |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11145514A (ja) * | 1997-11-05 | 1999-05-28 | Toshiba Corp | 窒化ガリウム系半導体素子およびその製造方法 |
JP2001093834A (ja) * | 1999-09-20 | 2001-04-06 | Sanyo Electric Co Ltd | 半導体素子および半導体ウエハならびにその製造方法 |
JP2007095858A (ja) * | 2005-09-28 | 2007-04-12 | Toshiba Ceramics Co Ltd | 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス |
JP2008021889A (ja) * | 2006-07-14 | 2008-01-31 | Covalent Materials Corp | 窒化物半導体単結晶 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2743901B2 (ja) * | 1996-01-12 | 1998-04-28 | 日本電気株式会社 | 窒化ガリウムの結晶成長方法 |
JP3888374B2 (ja) * | 2004-03-17 | 2007-02-28 | 住友電気工業株式会社 | GaN単結晶基板の製造方法 |
US20080296626A1 (en) * | 2007-05-30 | 2008-12-04 | Benjamin Haskell | Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same |
-
2009
- 2009-09-20 DE DE102009042349A patent/DE102009042349B4/de not_active Expired - Fee Related
-
2010
- 2010-09-16 CN CN2010800526159A patent/CN102668027A/zh active Pending
- 2010-09-16 US US13/496,957 patent/US20120217617A1/en not_active Abandoned
- 2010-09-16 JP JP2012530124A patent/JP2013505590A/ja active Pending
- 2010-09-16 WO PCT/DE2010/001094 patent/WO2011032546A1/de active Application Filing
- 2010-09-16 KR KR1020127009222A patent/KR20120083399A/ko not_active Application Discontinuation
- 2010-09-16 EP EP10776926A patent/EP2478551A1/de not_active Withdrawn
- 2010-09-20 TW TW099131883A patent/TW201126757A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11145514A (ja) * | 1997-11-05 | 1999-05-28 | Toshiba Corp | 窒化ガリウム系半導体素子およびその製造方法 |
JP2001093834A (ja) * | 1999-09-20 | 2001-04-06 | Sanyo Electric Co Ltd | 半導体素子および半導体ウエハならびにその製造方法 |
JP2007095858A (ja) * | 2005-09-28 | 2007-04-12 | Toshiba Ceramics Co Ltd | 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス |
JP2008021889A (ja) * | 2006-07-14 | 2008-01-31 | Covalent Materials Corp | 窒化物半導体単結晶 |
Also Published As
Publication number | Publication date |
---|---|
EP2478551A1 (de) | 2012-07-25 |
US20120217617A1 (en) | 2012-08-30 |
KR20120083399A (ko) | 2012-07-25 |
DE102009042349B4 (de) | 2011-06-16 |
CN102668027A (zh) | 2012-09-12 |
WO2011032546A1 (de) | 2011-03-24 |
DE102009042349A1 (de) | 2011-03-31 |
TW201126757A (en) | 2011-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6824610B2 (en) | Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate | |
EP1997125B1 (en) | Growth method using nanocolumn compliant layers and hvpe for producing high quality compound semiconductor materials | |
KR100401898B1 (ko) | 결정 성장용 기판 및 이를 이용한 기판 제조방법 | |
US7435608B2 (en) | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer | |
US6852161B2 (en) | Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device | |
JP5079361B2 (ja) | AlGaN結晶層の形成方法 | |
TWI426162B (zh) | 製備用於生長氮化鎵的基底和製備氮化鎵基底的方法 | |
KR100692267B1 (ko) | Ⅲ족 질화물 반도체 결정의 제조 방법 | |
JP2002343728A (ja) | 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板 | |
KR20060098977A (ko) | 화합물 반도체 장치 및 그 제조방법 | |
TWI442454B (zh) | 用於製備化合物半導體基底的方法 | |
TW200419652A (en) | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy | |
JP2009524251A (ja) | 有機金属化学気相成長を介して半極性(Al,In,Ga,B)Nの成長を促進させるための方法 | |
JP2012209586A (ja) | 半極性窒化物を備え、窒化物核生成層又はバッファ層に特徴を有するデバイス構造 | |
US7361522B2 (en) | Growing lower defect semiconductor crystals on highly lattice-mismatched substrates | |
JP2010056555A (ja) | 半導体構造物及びそれを製造する方法 | |
JP5077985B2 (ja) | 窒化物半導体層の形成方法 | |
US7625447B2 (en) | Method of growing semiconductor crystal | |
JP2013505590A (ja) | 半極性ウルツ鉱型iii族窒化物をベースとする半導体層、及び当該窒化物をベースとする半導体部材 | |
US6339014B1 (en) | Method for growing nitride compound semiconductor | |
KR20020065892A (ko) | 3족 질화물 반도체 결정 제조 방법, 갈륨나이트라이드-기재 화합물 반도체 제조 방법, 갈륨나이트라이드-기재 화합물 반도체, 갈륨나이트라이드-기재 화합물 반도체 발광 소자, 및 반도체발광 소자를 이용한 광원 | |
Paszkiewicz et al. | Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique | |
Sakai et al. | High-Qu ality GaN Growth on AIN/Sapphire Templates by MOVPE | |
LI | MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES | |
WO2010116596A1 (ja) | Iii族窒化物半導体自立基板の製造方法及びiii族窒化物半導体層成長用基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A524 | Written submission of copy of amendment under section 19 (pct) |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20130917 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130917 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140730 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140825 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150511 |