JP2013232677A - 光源及び光源を製作する方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
【解決手段】基板51、発光構造体、発光構造体を貫通し、発光構造体を第一および第二のセグメントに分割する溝であって、その一部は第一のセグメント64中の第一の層の途中まで達し、第一の層を残している溝66、溝内に堆積された導電性物質の層を含み、第一のセグメント中の第一の層を第二のセグメント65中の第二の層に接続する直列接続電極59、溝に形成された絶縁層57、第一のセグメント中の第二の層に電気的に接続された第一の電力接点、および第二のセグメント中の第一の層に電気的に接続された第二の電力接点、を備え、絶縁層は、第二のセグメント中の活性層の上に置かれた直列接続電極の一部の下に延在し、第一および第二の電力接点間に電位差が生じると、第一および第二のセグメントが光を発する。
【選択図】図6
Description
Claims (8)
- 基板;
発光構造体であって、
当該基板上に堆積された第一の導電型の半導体物質の第一の層、
当該第一の層の上に置かれた活性層、および
当該活性層の上に置かれた、当該第一の導電型とは逆の導電型の半導体物質の第二の層、
を含む発光構造体;
当該発光構造体を貫通し、当該発光構造体を第一および第二のセグメントに分割する溝であって、その一部は当該第一のセグメント中の当該第一の層の途中まで達し、当該第一の層を残している溝;
当該溝内に堆積された導電性物質の層を含み、当該第一のセグメント中の当該第一の層を当該第二のセグメント中の当該第二の層に接続する直列接続電極;
当該溝に形成され、当該導電性物質の層が当該第二のセグメント中の当該第一の層及び当該活性層と直接接触するのを防ぐように形成された絶縁層;
当該第一のセグメント中の当該第二の層に電気的に接続された第一の電力接点;および
当該第二のセグメント中の当該第一の層に電気的に接続された第二の電力接点;
を備え、
当該絶縁層は、当該第二のセグメント中の当該活性層の上に置かれた当該直列接続電極の一部の下に延在して形成されていて、
当該第一および第二の電力接点間に電位差が生じると、当該第一および第二のセグメントが光を発するものである、光源。 - 当該絶縁層は、当該溝内に残された当該第一のセグメント中の当該第一の層の上面に延在し、
当該直列接続電極は、当該溝内に残された当該第一のセグメント中の当該第一の層上に延在した当該絶縁膜に形成された開口部を介して、当該第一のセグメント中の当該第一の層と接続されている、
請求項1に記載の光源。 - 当該導電性物質が金属を含むものである、請求項1に記載の光源。
- 当該導電性物質がITOを含むものである、請求項1に記載の光源。
- 基板上に発光構造体を堆積する工程であって、当該発光構造体が
当該基板上に堆積された第一の導電型の半導体物質の第一の層、
当該第一の層の上に置かれた活性層、および
当該活性層の上に置かれた、当該第一の導電型とは逆の導電型の半導体物質の第二の層、
を含む工程;
当該発光構造体を貫通して当該基板にまで達している溝をエッチングすることによって、当該発光構造体を第一および第二のセグメントに分割する工程であって、当該溝の一部では当該第一のセグメント中の当該第一の層の途中まで達するようにして当該第一の層を残す工程;
当該溝において当該第二のセグメント中の当該第一の層及び当該活性層を覆うとともに、当該第二のセグメント中の当該活性層の上に置かれた当該直列接続電極の一部の下に延在するように絶縁層を形成する工程;
導電性物質の層を含み、当該第一のセグメント中の当該第一の層を当該第二のセグメント中の当該第二の層に接続する直列接続電極を、当該溝内に堆積する工程;
当該第一のセグメント中の当該第二の層に電気的に接続された第一の電力接点を施与する工程;および
当該第二のセグメント中の当該第一の層に電気的に接続された第二の電力接点を施与する工程;
を備え、
当該第一および第二の電力接点間に電位差が生じると、当該第一および第二のセグメントが光を発する光源を製作する方法。 - 当該絶縁層を形成する工程は、当該絶縁層を、当該溝内に残された当該第一のセグメント中の当該第一の層の上面に延在させる工程を含み、
さらに、当該第一のセグメント中の当該第一の層上に延在した当該絶縁膜に開口部を形成する工程を含み、
当該直列接続電極を当該溝内に堆積する工程は、当該直列接続電極が当該開口部を介して当該第一のセグメント中の当該第一の層と接続されるようにする工程を含む、
請求項5に記載の方法。 - 当該導電性物質が金属を含む、請求項5に記載の方法。
- 当該導電性物質がITOを含む、請求項5に記載の方法。
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US12/208,502 US7939839B2 (en) | 2008-09-11 | 2008-09-11 | Series connected segmented LED |
US12/208,502 | 2008-09-11 |
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JP2011526896A Division JP2012507134A (ja) | 2008-09-11 | 2009-08-20 | 直列接続されたセグメント化led |
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JP2013145919A Active JP5586748B2 (ja) | 2008-09-11 | 2013-07-11 | 光源及び光源を製作する方法 |
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US (3) | US7939839B2 (ja) |
EP (1) | EP2338183B1 (ja) |
JP (2) | JP2012507134A (ja) |
KR (1) | KR101575922B1 (ja) |
CN (1) | CN102132429B (ja) |
HK (1) | HK1158827A1 (ja) |
TW (1) | TWI462282B (ja) |
WO (1) | WO2010030482A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160079275A (ko) * | 2014-12-26 | 2016-07-06 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8698184B2 (en) * | 2011-01-21 | 2014-04-15 | Cree, Inc. | Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature |
US9443903B2 (en) | 2006-06-30 | 2016-09-13 | Cree, Inc. | Low temperature high strength metal stack for die attachment |
US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US7939839B2 (en) * | 2008-09-11 | 2011-05-10 | Bridgelux, Inc. | Series connected segmented LED |
TWI418060B (zh) * | 2008-12-26 | 2013-12-01 | Lextar Electronics Corp | 發光二極體晶片的製造方法 |
US7982409B2 (en) | 2009-02-26 | 2011-07-19 | Bridgelux, Inc. | Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs |
US8581229B2 (en) * | 2009-11-23 | 2013-11-12 | Koninklijke Philips N.V. | III-V light emitting device with thin n-type region |
KR101081135B1 (ko) * | 2010-03-15 | 2011-11-07 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
US8084775B2 (en) * | 2010-03-16 | 2011-12-27 | Bridgelux, Inc. | Light sources with serially connected LED segments including current blocking diodes |
JP5637210B2 (ja) * | 2010-06-25 | 2014-12-10 | 豊田合成株式会社 | 半導体発光素子 |
US20120037946A1 (en) * | 2010-08-12 | 2012-02-16 | Chi Mei Lighting Technology Corporation | Light emitting devices |
US10490598B2 (en) | 2010-09-13 | 2019-11-26 | Epistar Corporation | Light-emitting structure having a plurality of light-emitting structure units |
KR101650518B1 (ko) * | 2010-09-13 | 2016-08-23 | 에피스타 코포레이션 | 발광 구조체 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
US8536594B2 (en) * | 2011-01-28 | 2013-09-17 | Micron Technology, Inc. | Solid state lighting devices with reduced dimensions and methods of manufacturing |
JP5541261B2 (ja) * | 2011-03-23 | 2014-07-09 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
US8344392B2 (en) | 2011-05-12 | 2013-01-01 | Epistar Corporation | Light-emitting element and the manufacturing method thereof |
US9337366B2 (en) | 2011-07-26 | 2016-05-10 | Micron Technology, Inc. | Textured optoelectronic devices and associated methods of manufacture |
KR20130025831A (ko) * | 2011-09-02 | 2013-03-12 | 스탄레 덴끼 가부시키가이샤 | 반도체 발광소자 어레이 및 차량용 등구 |
US8581267B2 (en) | 2011-11-09 | 2013-11-12 | Toshiba Techno Center Inc. | Series connected segmented LED |
TW201407747A (zh) * | 2012-08-03 | 2014-02-16 | Chi Mei Lighting Tech Corp | 發光二極體結構及其製造方法 |
TW201347141A (zh) * | 2012-05-04 | 2013-11-16 | Chi Mei Lighting Tech Corp | 發光二極體結構及其製造方法 |
CN103700682A (zh) * | 2012-05-04 | 2014-04-02 | 奇力光电科技股份有限公司 | 发光二极管结构及其制造方法 |
US8816383B2 (en) * | 2012-07-06 | 2014-08-26 | Invensas Corporation | High performance light emitting diode with vias |
US10388690B2 (en) | 2012-08-07 | 2019-08-20 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
US10804316B2 (en) * | 2012-08-07 | 2020-10-13 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
CN102983147A (zh) * | 2012-09-24 | 2013-03-20 | 杭州士兰明芯科技有限公司 | 一种发光二极管芯片及其制造方法 |
KR101420789B1 (ko) * | 2012-12-05 | 2014-07-18 | 주식회사 세미콘라이트 | 반도체 발광소자 |
KR101420788B1 (ko) * | 2012-12-05 | 2014-07-18 | 주식회사 세미콘라이트 | 반도체 발광소자 |
KR20140073351A (ko) | 2012-12-06 | 2014-06-16 | 엘지이노텍 주식회사 | 발광 소자 |
US9093627B2 (en) * | 2012-12-21 | 2015-07-28 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
US9356212B2 (en) | 2012-12-21 | 2016-05-31 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
CN103915463B (zh) * | 2013-01-09 | 2016-12-28 | 新世纪光电股份有限公司 | 发光装置 |
CN105074942A (zh) * | 2013-02-25 | 2015-11-18 | 首尔伟傲世有限公司 | 具有多个发光元件的发光二极管及其制造方法 |
US10278243B2 (en) * | 2014-03-06 | 2019-04-30 | Seoul Semiconductor Co., Ltd. | Backlight module with MJT LED and backlight unit including the same |
KR102364160B1 (ko) * | 2014-03-06 | 2022-02-21 | 서울반도체 주식회사 | Mjt led를 이용한 백라이트 모듈 및 이를 포함하는 백라이트 유닛 |
US9991423B2 (en) * | 2014-06-18 | 2018-06-05 | X-Celeprint Limited | Micro assembled LED displays and lighting elements |
US9343633B1 (en) * | 2014-10-31 | 2016-05-17 | Mikro Mesa Technology Co., Ltd. | Light-emitting diode lighting device |
CN104409605B (zh) * | 2014-11-28 | 2017-10-27 | 杭州士兰明芯科技有限公司 | 一种高压芯片led结构及其制作方法 |
USD826871S1 (en) | 2014-12-11 | 2018-08-28 | Cree, Inc. | Light emitting diode device |
CN104733487B (zh) * | 2015-03-20 | 2018-01-09 | 厦门乾照光电股份有限公司 | 一种具有立体发光结构的高压发光二极管 |
JP2017059638A (ja) * | 2015-09-15 | 2017-03-23 | 株式会社東芝 | 半導体発光素子 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
WO2017220454A1 (en) | 2016-06-23 | 2017-12-28 | Koninklijke Philips N.V. | Optical transmitter, optical receiver and optical link |
KR102550005B1 (ko) * | 2016-07-15 | 2023-07-03 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 |
TWI830759B (zh) * | 2019-07-31 | 2024-02-01 | 晶元光電股份有限公司 | 發光二極體元件及其製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002359402A (ja) * | 2001-03-29 | 2002-12-13 | Lumileds Lighting Us Llc | 高抵抗性基層の上に形成されたモノリシック直列/並列ledアレイ |
WO2007081092A1 (en) * | 2006-01-09 | 2007-07-19 | Seoul Opto Device Co., Ltd. | Del à couche d'ito et son procédé de fabrication |
JP2008060132A (ja) * | 2006-08-29 | 2008-03-13 | Rohm Co Ltd | 半導体発光素子およびその製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4879250A (en) | 1988-09-29 | 1989-11-07 | The Boeing Company | Method of making a monolithic interleaved LED/PIN photodetector array |
JP3497741B2 (ja) | 1998-09-25 | 2004-02-16 | 株式会社東芝 | 半導体発光装置及び半導体発光装置の駆動方法 |
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
US6410942B1 (en) * | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
JP2002076437A (ja) * | 2000-08-29 | 2002-03-15 | Kyocera Corp | Ledアレイ |
US7880182B2 (en) * | 2002-07-15 | 2011-02-01 | Epistar Corporation | Light-emitting element array |
TWI249148B (en) * | 2004-04-13 | 2006-02-11 | Epistar Corp | Light-emitting device array having binding layer |
US6869812B1 (en) * | 2003-05-13 | 2005-03-22 | Heng Liu | High power AllnGaN based multi-chip light emitting diode |
TWI223460B (en) * | 2003-09-23 | 2004-11-01 | United Epitaxy Co Ltd | Light emitting diodes in series connection and method of making the same |
JP2005136142A (ja) * | 2003-10-30 | 2005-05-26 | Kyocera Corp | 発光ダイオードアレイ装置及びそれを用いた発光ダイオードプリンタ |
EP1700344B1 (en) * | 2003-12-24 | 2016-03-02 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor light emitting device and lighting module |
US7122398B1 (en) * | 2004-03-25 | 2006-10-17 | Nanosolar, Inc. | Manufacturing of optoelectronic devices |
JP3904571B2 (ja) * | 2004-09-02 | 2007-04-11 | ローム株式会社 | 半導体発光装置 |
KR100721454B1 (ko) * | 2005-11-10 | 2007-05-23 | 서울옵토디바이스주식회사 | 광 결정 구조체를 갖는 교류용 발광소자 및 그것을제조하는 방법 |
JP5008911B2 (ja) * | 2006-07-04 | 2012-08-22 | ローム株式会社 | 半導体発光素子およびその製造方法 |
WO2008038910A1 (en) * | 2006-09-25 | 2008-04-03 | Seoul Opto Device Co., Ltd. | Light emitting diode having alingap active layer and method of fabricating the same |
US7714348B2 (en) * | 2006-10-06 | 2010-05-11 | Ac-Led Lighting, L.L.C. | AC/DC light emitting diodes with integrated protection mechanism |
TWI440210B (zh) * | 2007-01-22 | 2014-06-01 | Cree Inc | 使用發光裝置外部互連陣列之照明裝置及其製造方法 |
CN101257071B (zh) * | 2007-03-02 | 2011-09-07 | 普瑞光电股份有限公司 | 发光二极管元件及其制作方法 |
KR100974923B1 (ko) * | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | 발광 다이오드 |
US7939839B2 (en) * | 2008-09-11 | 2011-05-10 | Bridgelux, Inc. | Series connected segmented LED |
US7982409B2 (en) * | 2009-02-26 | 2011-07-19 | Bridgelux, Inc. | Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs |
-
2008
- 2008-09-11 US US12/208,502 patent/US7939839B2/en active Active
-
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- 2009-08-20 EP EP09813430.7A patent/EP2338183B1/en active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002359402A (ja) * | 2001-03-29 | 2002-12-13 | Lumileds Lighting Us Llc | 高抵抗性基層の上に形成されたモノリシック直列/並列ledアレイ |
WO2007081092A1 (en) * | 2006-01-09 | 2007-07-19 | Seoul Opto Device Co., Ltd. | Del à couche d'ito et son procédé de fabrication |
JP2008060132A (ja) * | 2006-08-29 | 2008-03-13 | Rohm Co Ltd | 半導体発光素子およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160079275A (ko) * | 2014-12-26 | 2016-07-06 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
KR102326926B1 (ko) * | 2014-12-26 | 2021-11-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 발광 소자 패키지 |
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WO2010030482A3 (en) | 2010-05-27 |
USRE46155E1 (en) | 2016-09-20 |
EP2338183A2 (en) | 2011-06-29 |
EP2338183A4 (en) | 2013-03-27 |
KR20110057152A (ko) | 2011-05-31 |
CN102132429B (zh) | 2015-08-26 |
TWI462282B (zh) | 2014-11-21 |
US20110163347A1 (en) | 2011-07-07 |
US7939839B2 (en) | 2011-05-10 |
WO2010030482A2 (en) | 2010-03-18 |
TW201027798A (en) | 2010-07-16 |
JP5586748B2 (ja) | 2014-09-10 |
US20100059768A1 (en) | 2010-03-11 |
HK1158827A1 (en) | 2012-07-20 |
EP2338183B1 (en) | 2018-01-10 |
CN102132429A (zh) | 2011-07-20 |
JP2012507134A (ja) | 2012-03-22 |
US8207543B2 (en) | 2012-06-26 |
KR101575922B1 (ko) | 2015-12-08 |
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