JP5586748B2 - 光源及び光源を製作する方法 - Google Patents
光源及び光源を製作する方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 21
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- 239000000463 material Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 description 9
- 238000000926 separation method Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Description
Claims (8)
- 基板;
発光構造体であって、
当該基板上に堆積された第一の導電型の半導体物質の第一の層、
当該第一の層の上に置かれた活性層、および
当該活性層の上に置かれた、当該第一の導電型とは逆の導電型の半導体物質の第二の層、
を含む発光構造体;
当該発光構造体を貫通し、当該発光構造体を第一および第二のセグメントに分割する溝であって、その一部は当該第一のセグメント中の当該第一の層の途中まで達し、当該第一の層を残している溝;
当該溝内に堆積された導電性物質の層を含み、当該第二のセグメント中の当該活性層の上方に延在して、当該第一のセグメント中の当該第一の層を当該第二のセグメント中の当該第二の層に接続する直列接続電極;
当該溝の底面及び当該第二のセグメント中の当該第一の層及び当該活性層の側面に形成され、当該溝内に残された当該第一のセグメント中の当該第一の層の上面に延在し、当該直列接続電極が当該第二のセグメント中の当該第一の層及び当該活性層と直接接触するのを防ぐように形成された絶縁層;
当該第一のセグメント中の当該第二の層に電気的に接続された第一の電力接点;および
当該第二のセグメント中の当該第一の層に電気的に接続された第二の電力接点;
を備え、
当該絶縁層は、当該第二のセグメント中の当該活性層の上方に位置する当該直列接続電極と当該第二のセグメント中の当該活性層との間に延在して形成されていて、
当該第一および第二の電力接点間に電位差が生じると、当該第一および第二のセグメントが光を発するものである、光源。 - 当該直列接続電極は、当該溝内に残された当該第一のセグメント中の当該第一の層上に延在した当該絶縁膜に形成された開口部を介して、当該第一のセグメント中の当該第一の層と接続されている、
請求項1に記載の光源。 - 当該導電性物質が金属を含むものである、請求項1または2に記載の光源。
- 当該導電性物質がITOを含むものである、請求項1または2に記載の光源。
- 基板上に発光構造体を堆積する工程であって、当該発光構造体が
当該基板上に堆積された第一の導電型の半導体物質の第一の層、
当該第一の層の上に置かれた活性層、および
当該活性層の上に置かれた、当該第一の導電型とは逆の導電型の半導体物質の第二の層、
を含む工程;
当該発光構造体を貫通して当該基板にまで達している溝をエッチングすることによって、当該発光構造体を第一および第二のセグメントに分割する工程であって、当該溝の一部では当該第一のセグメント中の当該第一の層の途中まで達するようにして当該第一の層を残す工程;
当該溝において、当該溝の底面及び当該第二のセグメント中の当該第一の層及び当該活性層の側面を覆うとともに、当該溝内に残された当該第一のセグメント中の当該第一の層の上面に延在させ、当該第二のセグメント中の当該第二の層の上に延在するように絶縁層を形成する工程;
当該溝内に堆積される導電性物質の層を含み、当該第二のセグメント中の当該第二の層の上に形成された当該絶縁層の上に延在し、当該第一のセグメント中の当該第一の層を当該第二のセグメント中の当該第二の層に接続する直列接続電極を形成する工程;および
当該第一のセグメント中の当該第二の層に電気的に接続された第一の電力接点、及び、当該第二のセグメント中の当該第一の層に電気的に接続された第二の電力接点、を施与する工程;
を備え、
当該第一および第二の電力接点間に電位差が生じると、当該第一および第二のセグメントが光を発する光源を製作する方法。 - さらに、当該第一のセグメント中の当該第一の層上に延在した当該絶縁膜に開口部を形成する工程を含み、
当該直列接続電極を当該溝内に堆積する工程は、当該直列接続電極が当該開口部を介して当該第一のセグメント中の当該第一の層と接続されるようにする工程を含む、
請求項5に記載の方法。 - 当該導電性物質が金属を含む、請求項5または6に記載の方法。
- 当該導電性物質がITOを含む、請求項5または6に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/208,502 US7939839B2 (en) | 2008-09-11 | 2008-09-11 | Series connected segmented LED |
US12/208,502 | 2008-09-11 |
Related Parent Applications (1)
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JP2011526896A Division JP2012507134A (ja) | 2008-09-11 | 2009-08-20 | 直列接続されたセグメント化led |
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JP2013232677A JP2013232677A (ja) | 2013-11-14 |
JP5586748B2 true JP5586748B2 (ja) | 2014-09-10 |
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JP2011526896A Pending JP2012507134A (ja) | 2008-09-11 | 2009-08-20 | 直列接続されたセグメント化led |
JP2013145919A Active JP5586748B2 (ja) | 2008-09-11 | 2013-07-11 | 光源及び光源を製作する方法 |
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US (3) | US7939839B2 (ja) |
EP (1) | EP2338183B1 (ja) |
JP (2) | JP2012507134A (ja) |
KR (1) | KR101575922B1 (ja) |
CN (1) | CN102132429B (ja) |
HK (1) | HK1158827A1 (ja) |
TW (1) | TWI462282B (ja) |
WO (1) | WO2010030482A2 (ja) |
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2008
- 2008-09-11 US US12/208,502 patent/US7939839B2/en active Active
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- 2009-08-20 JP JP2011526896A patent/JP2012507134A/ja active Pending
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EP2338183A4 (en) | 2013-03-27 |
TW201027798A (en) | 2010-07-16 |
US7939839B2 (en) | 2011-05-10 |
CN102132429B (zh) | 2015-08-26 |
EP2338183B1 (en) | 2018-01-10 |
JP2012507134A (ja) | 2012-03-22 |
US20110163347A1 (en) | 2011-07-07 |
TWI462282B (zh) | 2014-11-21 |
USRE46155E1 (en) | 2016-09-20 |
US20100059768A1 (en) | 2010-03-11 |
WO2010030482A3 (en) | 2010-05-27 |
KR101575922B1 (ko) | 2015-12-08 |
KR20110057152A (ko) | 2011-05-31 |
HK1158827A1 (en) | 2012-07-20 |
EP2338183A2 (en) | 2011-06-29 |
US8207543B2 (en) | 2012-06-26 |
JP2013232677A (ja) | 2013-11-14 |
WO2010030482A2 (en) | 2010-03-18 |
CN102132429A (zh) | 2011-07-20 |
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