JP2013232531A - 描画装置及び物品の製造方法 - Google Patents

描画装置及び物品の製造方法 Download PDF

Info

Publication number
JP2013232531A
JP2013232531A JP2012103832A JP2012103832A JP2013232531A JP 2013232531 A JP2013232531 A JP 2013232531A JP 2012103832 A JP2012103832 A JP 2012103832A JP 2012103832 A JP2012103832 A JP 2012103832A JP 2013232531 A JP2013232531 A JP 2013232531A
Authority
JP
Japan
Prior art keywords
correction
data
charged particle
particle beam
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2012103832A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013232531A5 (enExample
Inventor
Yusuke Sugiyama
佑輔 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012103832A priority Critical patent/JP2013232531A/ja
Priority to US13/869,483 priority patent/US20130288181A1/en
Publication of JP2013232531A publication Critical patent/JP2013232531A/ja
Publication of JP2013232531A5 publication Critical patent/JP2013232531A5/ja
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP2012103832A 2012-04-27 2012-04-27 描画装置及び物品の製造方法 Abandoned JP2013232531A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012103832A JP2013232531A (ja) 2012-04-27 2012-04-27 描画装置及び物品の製造方法
US13/869,483 US20130288181A1 (en) 2012-04-27 2013-04-24 Drawing apparatus, and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012103832A JP2013232531A (ja) 2012-04-27 2012-04-27 描画装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
JP2013232531A true JP2013232531A (ja) 2013-11-14
JP2013232531A5 JP2013232531A5 (enExample) 2015-06-18

Family

ID=49477603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012103832A Abandoned JP2013232531A (ja) 2012-04-27 2012-04-27 描画装置及び物品の製造方法

Country Status (2)

Country Link
US (1) US20130288181A1 (enExample)
JP (1) JP2013232531A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160007435A (ko) * 2014-07-10 2016-01-20 아이엠에스 나노패브릭케이션 아게 컨볼루션 커널을 사용한 입자 빔 기록기의 주문제작
JP2016512930A (ja) * 2014-02-21 2016-05-09 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子リソグラフィシステムにおける近接効果補正
KR20170009606A (ko) * 2015-07-17 2017-01-25 아이엠에스 나노패브릭케이션 아게 하전 입자 멀티빔 노출 툴의 결함 빔렛 보상
JP2018054757A (ja) * 2016-09-27 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 位置計測装置および位置計測方法
JP2020087957A (ja) * 2018-11-15 2020-06-04 大日本印刷株式会社 荷電マルチビーム描画装置の描画データ作成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6316052B2 (ja) * 2014-03-26 2018-04-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US20230124768A1 (en) 2019-05-24 2023-04-20 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density
US11756765B2 (en) 2019-05-24 2023-09-12 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density
US10748744B1 (en) * 2019-05-24 2020-08-18 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6035113A (en) * 1998-01-05 2000-03-07 International Business Machines Corporation Electron beam proximity correction method for hierarchical design data
US6610989B1 (en) * 1999-05-31 2003-08-26 Fujitsu Limited Proximity effect correction method for charged particle beam exposure
JP4017935B2 (ja) * 2002-07-30 2007-12-05 株式会社日立ハイテクノロジーズ マルチビーム型電子線描画方法及び装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016512930A (ja) * 2014-02-21 2016-05-09 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子リソグラフィシステムにおける近接効果補正
JP2019009447A (ja) * 2014-02-21 2019-01-17 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子リソグラフィシステムにおける近接効果補正
KR20160007435A (ko) * 2014-07-10 2016-01-20 아이엠에스 나노패브릭케이션 아게 컨볼루션 커널을 사용한 입자 빔 기록기의 주문제작
KR20160007443A (ko) * 2014-07-10 2016-01-20 아이엠에스 나노패브릭케이션 아게 컨볼루션 커널을 사용한 입자 빔 기록기의 이미징 편차 보상
JP2016018995A (ja) * 2014-07-10 2016-02-01 アイエムエス ナノファブリケーション アーゲー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
JP2016029715A (ja) * 2014-07-10 2016-03-03 アイエムエス ナノファブリケーション アーゲー 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償
KR102357185B1 (ko) * 2014-07-10 2022-02-03 아이엠에스 나노패브릭케이션 게엠베하 컨볼루션 커널을 사용한 입자 빔 기록기의 주문제작
KR102304067B1 (ko) 2014-07-10 2021-09-24 아이엠에스 나노패브릭케이션 게엠베하 컨볼루션 커널을 사용한 입자 빔 기록기의 이미징 편차 보상
KR102179130B1 (ko) 2015-07-17 2020-11-18 아이엠에스 나노패브릭케이션 게엠베하 하전 입자 멀티빔 노출 툴의 결함 빔렛 보상
KR20170009606A (ko) * 2015-07-17 2017-01-25 아이엠에스 나노패브릭케이션 아게 하전 입자 멀티빔 노출 툴의 결함 빔렛 보상
JP2018054757A (ja) * 2016-09-27 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 位置計測装置および位置計測方法
JP2020087957A (ja) * 2018-11-15 2020-06-04 大日本印刷株式会社 荷電マルチビーム描画装置の描画データ作成方法
JP7206830B2 (ja) 2018-11-15 2023-01-18 大日本印刷株式会社 荷電マルチビーム描画装置の描画データ作成方法

Also Published As

Publication number Publication date
US20130288181A1 (en) 2013-10-31

Similar Documents

Publication Publication Date Title
JP2013232531A (ja) 描画装置及び物品の製造方法
US9568907B2 (en) Correction of short-range dislocations in a multi-beam writer
JP4773224B2 (ja) 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法及びプログラム
JP5090887B2 (ja) 電子ビーム描画装置の描画方法及び電子ビーム描画装置
JP2015005729A (ja) マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP5797454B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
KR101621784B1 (ko) 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법
JP2016207815A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2014060194A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US9666410B2 (en) Charged particle beam device
TWI747196B (zh) 多帶電粒子束描繪裝置及多帶電粒子束描繪方法
CN114935879A (zh) 描绘数据生成方法以及多带电粒子束描绘装置
JP2013219085A (ja) 描画装置、描画方法、および、物品の製造方法
JP2012222068A (ja) 電子ビーム露光装置及び電子ビーム露光方法
JP4477436B2 (ja) 荷電粒子線露光装置
JP2015095566A (ja) 描画装置、および物品の製造方法
KR102828829B1 (ko) 데이터 생성 방법, 하전 입자 빔 조사 장치 및 컴퓨터 판독 가능한 기록 매체
US20200357604A1 (en) Charged particle beam writing method and charged particle beam writing apparatus
JP2003303768A (ja) パターン形成方法および描画方法
JP2018107179A (ja) マルチ荷電粒子ビーム描画装置およびマルチ荷電粒子ビーム描画方法
JP2011171510A (ja) 荷電粒子ビーム描画装置
JP6861543B2 (ja) 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
JP5200571B2 (ja) 半導体装置及びフォトマスクの製造方法
JP2013229512A (ja) 描画データの処理方法、プログラム、荷電粒子線描画装置及び物品製造方法
JP6350204B2 (ja) 描画データ検証方法、プログラム、及びマルチ荷電粒子ビーム描画装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150427

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150427

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20150709